General Semiconductor ES3A, ES3D, ES3C, ES3B Datasheet

ES3A THRU ES3D

0.006 (0.152)

0.012 (0.305)

0.030 (0.76)

0.060 (1.52)

0.008 (0.203)

0.305 (7.75)

0.320 (8.13)

0.260 (6.60)

0.280 (7.11)

0.079 (2.06)

0.103 (2.62)

0.220 (5.59)

0.245 (6.22)

0.126 (3.20)

0.114 (2.90)

MAX.

SURFACE MOUNT ULTRAFAST EFFICIENT PLASTIC RECTIFIER

Reverse Voltage - 50 to 200 Volts Forward Current - 3.0 Amperes

DO-214AB

FEATURES

♦ Plastic package has Underwriters Laboratory

Flammability Classification 94V-0

♦ For surface mount applications
♦ Low profile package
♦ Built-in strain relief
♦ Ideal for automated placement
♦ Easy pick and place
♦ Superfast recover y time for high efficiency
♦ Glass passivated chip junction
♦ High temperature soldering:

250°C/10 seconds at terminals

MECHANICAL DATA

Case: JEDEC DO-214AB molded plastic body over

passivated chip
Terminals: Solder plated, solderable per MIL-STD-750,
Method 2026
Polarity: Color band denotes cathode end

Dimensions in inches and (millimeters)

Weight: 0.007 ounces, 0.21 gram

MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS

Ratings at 25°C ambient temperature unless otherwise specified.

SYMBOLS ES3A ES3B ES3C ES3D UNITS

Device marking code EA EB EC ED
Maximum repetitive peak reverse voltage V
Maximum RMS voltage V
Maximum DC blocking voltage V
Maximum average forward rectified current at T

=100°C I

L

Peak forward surge current

8.3ms single half sine-wave superimposed on I
rated load (JEDEC Method) at T

=100°C

L

Maximum instantaneous forward voltage at 3.0A V
Maximum DC reverse current T

at rated DC blocking voltage T
Maximum reverse recovery time

(NOTE 1)

Maximum reverse recovery time T

(NOTE 2)

Maximum stored charge T

(NOTE 2)

Typical junction capacitance
Typical thermal resistance

Operating junction and storage temperature range T

NOTES:
(1) Reverse recovery test conditions:IF=0.5A, IR=1.0A, Irr=0.25A
(2) trrand Qrrmeasured at:VR=30V, di/dt=50A/µs, IF=3.0A, and Irr=10% I
(3) Measured at 1.0 MHZand applied reverse voltage of 4.0 Volts
(4) Units mounted on P.C.B. with 0.31 x 0.31” (8.0 x 8.0mm) copper pad areas

(NOTE 4)

(NOTE 3)

=25°C 10.0

A

=100°C

A

=25°C 30.0

J

TJ=100°C

=25°C 15.0

J

TJ=100°C

RRM
RMS

DC
(AV)

FSM

F

I

R

t

rr

t

rr

Q

rr

C

J

R

ΘJA

R

ΘJL

, T

J

STG

R

50 100 150 200 Volts
35 70 105 140 Volts
50 100 150 200 Volts

3.0 Amps

100.0 Amps

0.90 Volts

500.0

20.0 ns

50.0

35.0

45.0 pF

47.0

12.0

-55 to +150 °C

µA

ns

nC

°C/W

4/98

0.4 0.6 0.8 1.0 1.2 1.4 1 .6 1.8

0.01

0.1

1

10

100

80 90 100 110 120 130 140 150

0

1.0

2.0

3.0

110100

25

50

75

100

125

150

0

1

100

15

30

45

60

75

90

0

0.1

105

0 20406080100

0.01

0.1

1

10

100

1,000

RATING AND CHARACTERISTIC CURVES ES3A THRU ES3D

FIG. 1 - MAXIMUM FORWARD CURRENT

DERATING CURVE

RESISTIVE OR INDUCTIVE LOAD

CURRENT, AMPERES

AVERAGE FORWARD RECTIFIED

P.C.B.MOUNTED on

0.31 x 0.31” (8.0 x 8.0mm) COPPER PADS

LEAD TEMPERATURE, °C

FIG. 3 - TYPICAL INSTANTANEOUS

FORWARD CHARACTERISTICS

TJ=25°C

FIG. 2 - MAXIMUM NON-REPETITIVE PEAK

FORWARD SURGE CURRENT

8.3ms SINGLE HALF SINE-WAVE
(JEDEC Method) at TL=100°C

AMPERES

PEAK FORWARD SURGE CURRENT,

NUMBER OF CYCLES AT 60 H

FIG. 4 - TYPICAL REVERSE LEAKAGE

CHARACTERISTICS

Z

AMPERES

PULSE WIDTH=300µs
1% DUTY CYCLE

INSTANTANEOUS FORWARD CURRENT,

INSTANTANEOUS FORWARD VOLTAGE,

VOLTS

FIG. 5 - TYPICAL JUNCTION CAPACITANCE

TJ=25°C
f=1.0 MH

Z

Vsig=50mVp-p

MICROAMPERES

TJ=100°C

TJ=75°C

TJ=25°C

INSTANTANEOUS REVERSE LEAKAGE CURRENT,

PERCENT OF RATED PEAK REVERSE

VOLTAGE, %

JUNCTION CAPACITANCE, pF

REVERSE VOLT AGE, VOL TS