General Semiconductor ES2G, ES2F Datasheet

0.160 (4.06)
0.180 (4.57)
0.006 (0.152)
0.012 (0.305)
0.030 (0.76)
0.060 (1.52)
0.008 (0.203)
0.205 (5.21)
0.220 (5.59)
0.084 (2.13)
0.096 (2.44)
0.077 (1.95)
0.086 (2.20)
0.130 (3.30)
0.155 (3.94)
MAX.
NEW PRODUCT NEW PRODUCT NEW PRODUCT
ES2F AND ES2G
SURFACE MOUNT FAST EFFICIENT PLASTIC RECTIFIER
Reverse Voltage - 300 to 400 Volts Forward Current - 2.0 Amperes
DO-214AA
FEATURES
Plastic package has Underwriters Laboratory
Flammability Classification 94V-0
For surface mount applicationsLow profile packageBuilt-in strain reliefIdeal for automated placementEasy pick and placeGlass passivated chip junctionSuperfast recover y times for high efficiencyLow power loss, high efficiencyHigh temperature soldering:
250°C/10 seconds at terminals
MECHANICAL DATA
Case: JEDEC DO-214AA molded plastic body
over passivated chip Terminals: Solder plated solderable per MIL-STD-750, Method 2026 Polarity: Color band denotes cathode end
Dimensions in inches and (millimeters)
Weight: 0.003 ounces, 0.093 gram
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25°C ambient temperature unless otherwise specified.
SYMBOLS ES2F ES2G UNITS
Device marking code EF EG Maximum repetitive peak reverse voltage V Working peak reverse voltage V Maximum RMS voltage V Maximum DC blocking voltage V Maximum average forward rectified current
=110°C
at T
L
RRM
RWM
RMS
DC
I
Peak forward surge current
8.3ms single half sine-wave superimposed on I rated load (JEDEC Method) at T
=110°C
L
Maximum instantaneous forward voltage at 2.0A V Maximum DC reverse current T
at working peak reverse voltage T Maximum reverse recovery time Maximum reverse recovery time
(NOTE 1) (NOTE 2)
Maximum reverse recovery current Maximum stored charge Typical junction capacitance Typical thermal resistance
Operating junction and storage temperature range T
NOTES: (1) Reverse recovery test conditions:I (2) Measured at I (3) Measured at 1.0 MHZand applied reverse voltage of 4.0 Volts (4) Units mounted on P.C.B.5.0 x 5.0mm (0.013mm thick) land areas
NOTICE: Advanced product information is subject to change without notice
=1.0A, di/dt=100A/µs, VR=30V, Irr=0.1I
F
(NOTE 2)
(NOTE 3)
(NOTE 4)
=0.5A, IR= I.0A, lrr=0.25A
F
=25°C 10
A
=100°C
A
(NOTE 2)
I
R
R
, T
J
RM
(AV)
FSM
F
I
R
t
rr
t
rr
RM
Q
rr
C
J
ΘJA ΘJL
STG
300 400 Volts 225 300 Volts 210 280 Volts 300 400 Volts
2.0 Amps
50 Amps
1.10 Volts
200
35 ns 50 ns
3.0 Amps 50 nC 15 pF 75
25
-55 to +150 °C
µA
°C/W
4/98
0.1
1
10
100
1,000
1
10
100
0.2 0.4 0.6 0.8
1 1.2 1.4 1.6
0.01
0.1
1
10
100
20
40
60
80
100
0.1
1
10
100
1,000
1
10
100
10
20
30
40
50
60
0
80 90 100 110 120 130 140 150
0
1.0
2.0
3.0
50
100
150
0
40
80
120
160
200
175
125
25
75
RATING AND CHARACTERISTIC CURVES ES2F AND ES2G
FIG. 1 - MAXIMUM FORWARD CURRENT
DERATING CURVE
RESISTIVE OR INDUCTIVE LOAD
CURRENT, AMPERES
AVERAGE FORWARD RECTIFIED
LEAD TEMPERATURE, °C
FIG. 3 - TYPICAL INSTANTANEOUS FORWARD
CHARACTERISTICS PER LEG
TJ=25°C PULSE WIDTH=300µs 1% DUTY CYCLE
FIG. 2 - MAXIMUM NON-REPETITIVE PEAK
FORWARD SURGE CURRENT
8.3ms SINGLE HALF SINE-WAVE (JEDEC Method) at TL=110°C
AMPERES
PEAK FORWARD SURGE CURRENT,
NUMBER OF CYCLES AT 60 H
Z
FIG. 4 - TYPICAL REVERSE CHARACTERISTICS
PER LEG
TJ=125°C
AMPERES
INSTANTANEOUS FORWARD CURRENT,
nC/ns
TJ=125°C
TJ=100°C
TJ=25°C
INSTANTANEOUS FORWARD VOLTAGE,
VOLTS
FIG. 5 - REVERSE SWITCHING CHARACTERISTICS
PER LEG
@5A, 50A/µs
@2A, 20A/µs
@5A, 50A/µs
@2A, 20A/µs
@1A, 100A/µs
@1A, 100A/µs
TJ=100°C
MICROAMPERES
TJ=25°C
INSTANTANEOUS REVERSE LEAKAGE CURRENT,
PERCENT OF RATED PEAK REVERSE
VOLTAGE, %
FIG. 6 - TYPICAL JUNCTION CAPACITANCE PER LEG
TJ=125°C f=1.0 MHz Vsig=50MVp-p
CAPACITANCE, pF
t
rr
Q
RR
STORED CHARGE/REVERSE RECOVERY TIME,
JUNCTION TEMPERATURE, °C
REVERSE VOLT AGE, VOL TS
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