General Semiconductor ES2A, ES2B, ES2C, ES2D Datasheet

ES2A THRU ES2D

SURFACE MOUNT FAST EFFICIENT PLASTIC RECTIFIER

Reverse Voltage - 50 to 200 Volts Forward Current - 2.0 Amperes

FEATURES

¨ Plastic package has Underwriters Laboratory

Flammability Classification 94V-0

¨ For surface mount applications
¨ Low profile package
¨ Built-in strain relief
¨ Ideal for automated placement
¨ Easy pick and place
¨ Glass passivated chip junction
¨ Superfast recovery times for high efficiency
¨ Low power loss, high efficiency
¨ High temperature soldering: 250¡C/10 seconds at terminals

MECHANICAL DATA

Case: JEDEC DO-214AA molded plastic body over passivated chip
Terminals: Solder plated solderable per MIL-STD-750,

Method 2026

Polarity: Color band denotes cathode end
Weight: 0.003 ounces, 0.093 gram

MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS

Ratings at 25¡C ambient temperature unless otherwise specified.

SYMBOLS ES2A ES2B ES2C ES2D UNITS

Device marking code EA EB EC ED

Maximum repetitive peak reverse voltage V

RRM

50 100 150 200 Volts

Maximum RMS voltage V

RMS

35 70 105 140 Volts

Maximum DC blocking voltage V

DC

50 100 150 200 Volts

Maximum average forward rectified current
at TL=110¡C

I

(AV)

2.0 Amps

Peak forward surge current

8.3ms single half sine-wave superimposed on I

FSM

50.0 Amps

rated load (JEDEC Method) at TL=110¡C

Maximum instantaneous forward voltage at 2.0A V

F

0.90 Volts

Maximum DC reverse current T

A

=25¡C 10.0

at rated DC blocking voltage TA=100¡C

I

R

350

mA

Maximum reverse recovery time

(NOTE 1)

t

rr

20.0 ns

Maximum reverse recovery time T

J

=25¡C 30.0

(NOTE 2)

TJ=100¡C

t

rr

50.0

ns

Maximum stored charge T

J

=25¡C 10.0

(NOTE 2)

TJ=100¡C

Q

rr

25.0

nC

Typical junction capacitance

(NOTE 3)

C

J

18.0 pF

Maximum thermal resistance

(NOTE 4)

R

QJA

75.0

R

QJL

20.0

¡C/W

Operating junction and storage temperature range TJ, T

STG

-55 to +150 ¡C

NOTES:
(1) Reverse recovery test conditions: I

F

=0.5A, IR= I.0A, lrr=0.25A

(2) T

rr

and Qrrmeasured at: IF=2.0A, VR=30V, di/dt=50A/ms, Irr=10% I

R

(3) Measured at 1.0 MHZand applied reverse voltage of 4.0 Volts
(4) Units mounted on P.C.B. 5.0 x 5.0mm (0.013mm thick) land areas

2/10/99

0.160 (4.06)

0.180 (4.57)

0.006 (0.152)

0.012 (0.305)

0.030 (0.76)

0.060 (1.52)

0.008 (0.203)

0.205 (5.21)

0.220 (5.59)

0.084 (2.13)

0.096 (2.44)

0.077 (1.95)

0.086 (2.20)

0.130 (3.30)

0.155 (3.94)

MAX.

DO-214AA

Dimensions in inches and (millimeters)

80 90 100 110 120 130 140 150

0

0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8

0.01

0.1

1

10

50

0.1

1

10

100

0

2.0

4.0

6.0

8.0

10

12

14

1

10

100

5.0

10

15

20

25

30

0

0.1

1

10

100

1

10

100

0

20

40

60

80

100

0.01

0.1

1

10

100

1,000

FIG. 1 - MAXIMUM FORWARD CURRENT

DERATING CURVE

LEAD TEMPERATURE, ¡C

AVERAGE FORWARD RECTIFIED

CURRENT, AMPERES

FIG. 2 - MAXIMUM NON-REPETITIVE PEAK

FORWARD SURGE CURRENT

NUMBER OF CYCLES AT 60 H

Z

PEAK FORWARD SURGE CURRENT,

AMPERES

FIG. 3 - TYPICAL INSTANTANEOUS

FORWARD CHARACTERISTICS

FIG. 4 - TYPICAL REVERSE LEAKAGE

CHARACTERISTICS

INSTANTANEOUS FORWARD CURRENT,

AMPERES

INSTANTANEOUS REVERSE LEAKAGE CURRENT,

MICROAMPERES

INSTANTANEOUS FORWARD VOLTAGE,

VOLTS

PERCENT OF RATED PEAK REVERSE

VOLTAGE, %

FIG. 5 - TYPICAL JUNCTION CAPACITANCE

JUNCTION CAPACITANCE, pF

REVERSE VOLTAGE, VOLTS

8.3ms SINGLE HALF SINE-WAVE
(JEDEC Method) at T

L

=110¡C

TJ=125¡C

TJ=85¡C

TJ=25¡C

TJ=25¡C

PULSE WIDTH=300ms
1% DUTY CYCLE

TJ=25¡C
f=1.0 MH

Z

Vsig=50mVp-p

RESISTIVE OR INDUCTIVE LOAD
P.C.B. MOUNTED ON 0.2 x 0.2Ó (5.0
x 5.0mm) COPPER PAD AREAS

RATING AND CHARACTERISTIC CURVES ES2A THRU ES2D