General Semiconductor ES1C, ES1B, ES1D, ES1A Datasheet

ES1A THRU ES1D

0.157 (3.99)

0.177 (4.50)

0.006 (0.152)

0.012 (0.305)

0.030 (0.76)

0.060 (1.52)

0.008 (0.203)

MAX.

0.194 (4.93)

0.208 (5.28)

0.100 (2.54)

0.110 (2.79)

0.078 (1.98)

0.090 (2.29)

0.049 (1.25)

0.065 (1.65)

SURFACE MOUNT ULTRAFAST EFFICIENT PLASTIC RECTIFIER

Reverse Voltage - 50 to 200 Volts Forward Current - 1.0 Ampere

DO-214AC

♦ Plastic package has Underwriters Laboratory

FEATURES

Flammability Classification 94V-0

♦ For surface mount applications
♦ Low profile package
♦ Ideally suited for use in

very high frequency switching power supplies,
inverters and as a free wheeling diodes

♦ Ultrafast recovery times for high efficiency
♦ Low forward voltage
♦ Low leakage current
♦ Glass passivated chip junction
♦ High temperature soldering guaranteed:

250°C/10 seconds on terminals

MECHANICAL DATA

Case: JEDEC DO-214AC molded plastic body over

passivated chip
Terminals: Solder plated, solderable per MIL-STD-750,
Method 2026
Polarity: Color band denotes cathode end

Dimensions in inches and (millimeters)

Weight: 0.002 ounces, 0.064 gram

MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS

Ratings at 25°C ambient temperature unless otherwise specified.

SYMBOLS ES1A ES1B ES1C ES1D UNITS

Device marking code EA EB EC ED
Maximum repetitive peak reverse voltage V
Maximum RMS voltage V
Maximum DC blocking voltage V
Maximum average forward rectified current

=120°C

at T

L

RRM
RMS

DC

I

(AV)

Peak forward surge current

8.3ms single half sine-wave superimposed on I

FSM

rated load (JEDEC Method)
Maximum instantaneous forward voltage at 0.6A 0.865

at 1.0A V
Maximum DC reverse current T

at rated DC blocking voltage T
Maximum reverse recovery time

(NOTE 1)

Maximum reverse recovery time T

(NOTE 2)

Maximum stored charge T

(NOTE 2)

Typical junction capacitance
Maximum thermal resistance

(NOTE 3)

(NOTE 4)

Operating and storage temperature range T

NOTES:
(1) Reverse recovery test conditions:I

(2) trrand Qrrmeasured at: IF=0.6A, VR=30V, di/dt=50A/µs, I
(3) Measured at 1.0 MHZand applied reverse voltage of 4.0 volts
(4) P.C.B. mounted on 0.2 x 0.2” (5.0 x 5.0mm)copper pad area

=0.5A, IR=1.0A, Irr=0.25A

F

=25°C 5.0

A

=100°C

A

=25°C 25.0

A

TA=100°C

=25°C 10.0

A

TA=100°C

=10% I

rr

RM

for measurement of t

F

I

R

t

rr

t

rr

Q

rr

C

J

R

ΘJA

R

ΘJL

, T

J

STG

rr

50 100 150 200 Volts
35 70 105 140 Volts
50 100 150 200 Volts

1.0 Amp

30.0 Amps

0.920 Volts

100

15.0 ns

35.0

25.0

7.0 pF

85.0

35.0

-55 to +150 °C

µA

ns

nC

°C/W

4/98

80 90 100 110 120 130 140 150

0

0.2

0.4

0.6

0.8

1.0

1.2

0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8

0.01

0.1

1

10

50

0.1 1 10 100

0

2.0

4.0

6.0

8.0

10

12

14

110100

5.0

10

15

20

25

30

0

0.1 1 10 100

1

10

100

020406080100

0.01

0.1

1

10

100

1,000

RATINGS AND CHARACTERISTIC CURVES ES1A THRU ES1D

FIG. 1 - MAXIMUM FORWARD CURRENT

RESISTIVE OR
INDUCTIVE LOAD

0.2 x 0.2” (5.0 x 5.0mm)
COPPER PAD AREAS

DERATING CURVE

FIG. 2 - MAXIMUM NON-REPETITIVE PEAK

FORWARD SURGE CURRENT

8.3ms SINGLE HALF SINE-WAVE
(JEDEC Method) at TL=120°C

CURRENT, AMPERES

AVERAGE FORWARD RECTIFIED

LEAD TEMPERATURE, °C

FIG. 3 - TYPICAL INSTANTANEOUS

FORWARD CHARACTERISTICS

PULSE WIDTH=300µs
1% DUTY CYCLE

AMPERES

TJ=25°C

AMPERES

PEAK FORWARD SURGE CURRENT,

NUMBER OF CYCLES AT 60 H

FIG. 4 - TYPICAL REVERSE LEAKAGE

CHARACTERISTICS

TJ=125°C

TJ=85°C

Z

MICROAMPERES

INSTANTANEOUS FORWARD CURRENT,

INSTANTANEOUS FORWARD VOLTAGE,

VOLTS

FIG. 5 - TYPICAL JUNCTION CAPACITANCE

JUNCTION CAPACITANCE, pF

REVERSE VOLT AGE, VOL TS

TJ=25°C
f=1.0 MH

Z

Vsig=50mVp-p

TJ=25°C

INSTANTANEOUS REVERSE LEAKAGE CURRENT,

PERCENT OF RATED PEAK REVERSE

VOLTAGE, %

FIG. 5 - TYPICAL THERMAL IMPEDANCE

MOUNTED on 0.2 x 0.2”(5 x 7mm)
COPPER PAD AREAS

TRANSIENT THERMAL IMPEDANCE, °C/W

t, PULSE DURATION, SEC