General Semiconductor EGP50A, EGP50G, EGP50F, EGP50D, EGP50C Datasheet

...

EGP50A THRU EGP50G

0.210 (5.3)

0.190 (4.8) DIA.

0.042 (1.07)

0.037 (0.94) DIA.

1.0 (25.4) MIN.

0.375 (9.5)

0.285 (7.2)

1.0 (25.4)

MIN.

GLASS PASSIVATED FAST EFFICIENT RECTIFIER

Reverse Voltage - 50 to 400 Volts Forward Current - 5.0 Amperes

Case Style GP20

PATENTED*

Dimensions in inches and (millimeters)

Patent No.3,996,602, brazed-lead assembly by Patent No.3,930,306

Glass-plastic encapsulation technique is covered by

MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS

FEATURES

♦ Plastic package has Underwriters Laboratories

Flammability Classification 94V-0

♦ Glass passivated cavity-free junction ♦ Superfast recovery time for high efficiency ♦ Low forward voltage, high

current capability

♦ Low leakage current ♦ High surge current capability ♦ High temperature metallurgically bonded construction ♦ High temperature soldering guaranteed:

300°C/10 seconds, 0.375" (9.5mm) lead length, 5 lbs. (2.3kg) tension

MECHANICAL DATA

Case: Molded plastic over solid glass body Terminals: Axial leads, solderable per MIL-STD-750,

Method 2026

Polarity: Color band denotes cathode end Mounting Position: Any Weight: 0.03 ounce, 0.8 gram

Ratings at 25°C ambient temperature unless otherwise specified.

SYMBOLS 50A 50B 50C 50D 50F 50G UNITS

Maximum recurrent peak reverse voltage V Maximum RMS voltage V Maximum DC blocking voltage V Maximum average forward rectified current

0.375" (9.5mm) lead length at T

=55°C

Peak forward surge current

8.3ms single half sine-wave superimposed on rated load

Maximum instantaneous forward voltage at 5.0A V Maximum DC reverse current T

at rated DC blocking voltage T Maximum reverse recovery time

Typical thermal resistance Typical junction capacitance

Operating junction and storage temperature range T

NOTES:

(1) Reverse recovery test conditions:IF=0.5A, IR=1.0A, Irr=0.25A (2) Thermal resistance from junction to ambient and from junction of lead at 0.375” (9.5mm) lead length,

both leads measured attached to heat sinks

(3) Measured at 1.0 MH

4/98

and applied reverse voltage of 4.0 Volts

(NOTE 1)

(NOTE 2)

(NOTE 3)

=25°C 5.0

=125°C

EGP EGP EGP EGP EGP EGP

RRM RMS

(AV)

FSM

50 100 150 200 300 400 Volts 35 70 105 140 210 280 Volts 50 100 150 200 300 400 Volts

5.0 Amps

150.0 Amps

0.95 1.25 Volts

50.0

trr 50.0 ns

ΘJA

ΘJL

J, TSTG

20.0

5.0

95 75 pF

-65 to +150 °C

µA

°C\W

175

110100

100

125

150

6.0

0 25 50 75 100 125 150 175

1.0

2.0

3.0

4.0

5.0

0.4 0.6 0.8 1.2 1.4 1.6 1.81.0

0.01

0.1

0.2

0.01

0.1 1 10 100

0.1

1.0

100

0.1 1 10 100

1,000

120

150

180

210

020406080100

0.001

0.01

0.1

100

RATINGS AND CHARACTERISTIC CURVES EGP50A THRU EGP50G

FIG. 1 - MAXIMUM FORWARD CURRENT

DERATING CURVE

COPPER HEATSINKS

CURRENT, AMPERES

0.375" (9.5mm)

AVERAGE FORWARD RECTIFIED

LEAD TEMPERATURE, °C

FIG. 3 - TYPICAL INSTANTANEOUS

FORWARD CHARACTERISTICS

PULSE WIDTH=300µs 1% DUTY CYCLE

TJ=150°C

RESISTIVE OR INDUCTIVE LOAD

FIG. 2 - MAXIMUM NON-REPETITIVE PEAK

FORWARD SURGE CURRENT

TJ=TJ max.

8.3ms SINGLE HALF SINE-WAVE (JEDEC Method)

AMPERES

PEAK FORWARD SURGE CURRENT,

NUMBER OF CYCLES AT 60 H

FIG. 4 - TYPICAL REVERSE LEAKAGE

CHARACTERISTICS

TJ=150°C

TJ=125°C

AMPERES

INSTANTANEOUS FORWARD CURRENT,

JUNCTION CAPACITANCE, pF

TJ=25°C

EGP50A - EGP50D

EGP50F & EGP50G

INSTANTANEOUS FORWARD VOLTAGE,

VOLTS

FIG. 5 - TYPICAL JUNCTION CAPACITANCE

TJ=25°C f=1.0 MH Vsig=50mVp-p

EGP50A-EGP50D

EGP50F & EGP50G

REVERSE VOLTA GE, VOLTS

TJ=75°C

MICROAMPERES

INSTANTANEOUS REVERSE LEAKAGE CURRENT,

TJ=25°C

PERCENT OF RATED PEAK REVERSE

VOLTAGE, %

FIG. 6 - TYPICAL TRANSIENT THERMAL IMPEDANCE

TRANSIENT THERMAL IMPEDANCE, °CW

t, PULSE DURATION, sec.