General Semiconductor EGP30G, EGP30A, EGP30F, EGP30D, EGP30C Datasheet

EGP30A THRU EGP30G

0.210 (5.3)

0.190 (4.8)
DIA.

0.042 (1.07)

0.037 (0.94)
DIA.

1.0 (25.4)
MIN.

0.375 (9.5)

0.285 (7.2)

1.0 (25.4)

MIN.

®

GLASS PASSIVATED FAST EFFICIENT RECTIFIER

Forward Voltage - 50 to 400 Volts Reverse Current - 3.0 Amperes

Case Style GP20

PATENTED*

Dimensions in inches and (millimeters)

*

Patent No.3,996,602 and brazed-lead assembly by Patent No. 3,930,306

Glass-plastic encapsulation technique is covered by

MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS

FEATURES

♦ Plastic package has Underwriters Laboratories

Flammability Classification 94V-0

♦ Glass passivated cavity-free junction
♦ Superfast recovery time for high efficiency
♦ Low forward voltage,

high current capability

♦ Low leakage current
♦ High surge current capability
♦ High temperature metallurgically bonded construction
♦ High temperature soldering guaranteed:

300°C/10 seconds, 0.375" (9.5mm) lead length,
5 lbs. (2.3kg) tension

MECHANICAL DATA

Case: Molded plastic over solid glass body
Terminals: Plated axial leads, solderable per MIL-STD-750,

Method 2026

Polarity: Color band denotes cathode end
Mounting Position: Any
Weight: 0.03 ounce, 0.8 gram

Ratings at 25°C ambient temperature unless otherwise specified.

SYMBOLS 30A 30B 30C 30D 30F 30G UNITS

Maximum repetitive peak reverse voltage V
Maximum RMS voltage V
Maximum DC blocking voltage V
Maximum average forward rectified current

0.375" (9.5mm) lead length at T

=55°C

A

RRM
RMS

I

(AV)

DC

EGP EGP EGP EGP EGP EGP

Peak forward surge current

8.3ms single half sine-wave superimposed

I

FSM

on rated load
Maximum instantaneous forward voltage at 3.0A V
Maximum DC reverse current T

at rated DC blocking voltage T
Typical reverse recovery time
Typical junction capacitance
Typical thermal resistance

Operating junction and storage temperature range T

NOTES:

(1) Reverse recovery test conditions:IF=0.5A, IR=1.0A, Irr=0.25A
(2) Measured at 1.0 MH
(3) Thermal resistance from junction to ambient, and from junction to lead at 0.375” (9.5mm) lead length, P.C.B.mounted

4/98

and applied reverse voltage of 4.0 Volts

Z

(NOTE 1)

(NOTE 2)

(NOTE 3)

=25°C 5.0

A

=125°C I

A

F

R

trr 50.0 ns
C

J

R

ΘJA

R

ΘJL

J, TSTG

50 100 150 200 300 400 Volts
35 70 105 140 210 280 Volts
50 100 150 200 300 400 Volts

3.0 Amps

125.0 Amps

0.95 1.25 Volts

100.0 µA

95.0 75.0 pF

20.0

8.0

°C/W

-65 to +150 °C

175

0 25 50 75 100 125 150

0

1.0

2.0

3.0

1 10 100

0

25

50

75

100

125

150

175

0.1 1 10 100

1,000

0

30

60

90

120

150

180

210

0.4 0.6 0.8 1.2 1.4 1.6 1.81.0

0.01

0.1

1

10

50

0.2

0.01

0.1 1

10

100

0.1

1

10

100

0 20 40 60 80 100 120

0.001

0.01

0.1

1

10

100

RATINGS AND CHARACTERISTIC CURVES EGP30A THRU EGP30G

FIG. 1 - MAXIMUM FORWARD CURRENT

DERATING CURVE

RESISTIVE OR INDUCTIVE LOAD

0.375" (9.5mm) LEAD LENGTH

CURRENT, AMPERES

AVERAGE FORWARD RECTIFIED

AMBIENT TEMPERATURE, °C

FIG. 3 - TYPICAL INSTANTANEOUS

FORWARD CHARACTERISTICS

PULSE WIDTH=300µs
1% DUTY CYCLE

TJ=150°C

TJ=25°C

FIG. 2 - MAXIMUM NON-REPETITIVE PEAK

FORWARD SURGE CURRENT

TJ=TJmax.

8.3ms SINGLE HALF SINE-WAVE
(JEDEC Method)

AMPERES

PEAK FORWARD SURGE CURRENT,

NUMBER OF CYCLES AT 60 H

FIG. 4 - TYPICAL REVERSE LEAKAGE

CHARACTERISTICS

TJ=150°C

TJ=125°C

Z

AMPERES

INSTANTANEOUS FORWARD CURRENT,

INSTANTANEOUS FORWARD VOLTAGE,

VOLTS

FIG. 5 - TYPICAL JUNCTION CAPACITANCE

JUNCTION CAPACITANCE, pF

EGP30A - EGP30D

EGP30F & EGP30G

REVERSE VOLTA GE, VOLTS

TJ=25°C

TJ=25°C
f=1.0 MH
Vsig=50mVp-p

EGP30A - EGP30D

EGP30F & EGP30G

Z

TJ=75°C

MICROAMPERES

INSTANTANEOUS REVERSE LEAKAGE CURRENT,

TJ=25°C

PERCENT OF RATED PEAK REVERSE

VOLTAGE, %

FIG. 6 - TYPICAL TRANSIENT THERMAL IMPEDANCE

TRANSIENT THERMAL IMPEDANCE, °CW

t, PULSE DURATION, sec.