General Semiconductor EGP20D, EGP20C, EGP20B, EGP20G, EGP20F Datasheet

EGP20A THRU EGP20G

0.034 (0.86)

0.028 (0.71)

0.140 (3.6)

0.104 (2.6)

DIA.

DIA.

1.0

MIN.

(25.4)

0.230 (5.8)

0.300 (7.6)

1.0

MIN.

(25.4)

®

GLASS PASSIVATED FAST EFFICIENT RECTIFIER

Reverse Voltage - 50 to 400 Volts Forward Current - 2.0 Amperes

DO-204AC

PATENTED*

Dimensions in inches and (millimeters)

*

Patent No.3,996,602 and brazed-lead assembly by Patent No. 3,930,306

Glass-plastic encapsulation technique is covered by

FEATURES

♦ Plastic package has Underwriters Laboratories

Flammability Classification 94V-0

♦ Glass passivated cavity-free junction
♦ Superfast recovery time for high efficiency
♦ Low forward voltage, high current capability
♦ Low leakage current
♦ High surge current capability
♦ High temperature

metallurgically bonded construction

♦ High temperature soldering guaranteed:

300°C/10 seconds, 0.375" (9.5mm) lead length,
5 lbs. (2.3kg) tension

MECHANICAL DATA

Case: JEDEC DO-204AC molded plastic over solid glass

body
Terminals: Plated axial leads, solderable per MIL-STD-750,
Method 2026

Polarity: Color band denotes cathode end
Mounting Position: Any
Weight: 0.015 ounce, 0.4 gram

MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS

Ratings at 25°C ambient temperature unless otherwise specified.

SYMBOLS 20A 20B 20C 20D 20F 20G UNITS

Maximum repetitive peak reverse voltage V
Maximum RMS voltage V
Maximum DC blocking voltage V
Maximum average forward rectified current

0.375" (9.5mm) lead length at T

=55°C

A

RRM
RMS

I

(AV)

DC

Peak forward surge current,

8.3 ms single half sine-wave superimposed
on rated load

Maximum instantaneous forward voltage at 2.0A V
Maximum DC reverse current T

at rated DC blocking voltage T
Maximum reverse recovery time
Typical junction capacitance
Typical thermal resistance

(NOTE 2)

(NOTE 3)

=25°C 5.0

A

=125°C

A

) t

(NOTE 1

Operating junction and storage temperature range T

NOTES:

(1) Reverse recovery test conditions:IF=0.5A, IR=1.0A, Irr=0.25A
(2) Measured at 1.0 MH
(3) Thermal resistance from junction to ambient, and from junction to lead at 0.375” (9.5mm) lead length, P.C.B.mounted

and applied reverse voltage of 4.0 Volts

Z

R
R

J

I

FSM

C

, T

F

I

R

rr

J

ΘJA
ΘJL

STG

EGP EGP EGP EGP EGP EGP

50 100 150 200 300 400 Volts
35 70 105 140 210 280 Volts
50 100 150 200 300 400 Volts

0.95 1.25 Volts

70.0 45.0 pF

2.0 Amps

75.0 Amps

100.0

µA

50.0 ns

40.0

15.0

°C/W

-65 to +150 °C

4/98

0 25 50 75 100 125 150 175

0

1.0

2.0

3.0

1 10 100

0

15

30

45

60

75

90

0.1

1

10 100

1,000

0

20

40

60

80

100

120

140

0.01

0.1 1

10

100

0.1

1

10

100

0.4 0.6 0.8 1.2 1.4 1.6 1.81.0

0.01

0.1

1

10

50

0.2

0 20 40 60 80 100 120 140

0.001

0.01

0.1

1

10

100

RATINGS AND CHARACTERISTIC CURVES EGP20A THRU EGP20G

FIG. 1 - MAXIMUM FORWARD CURRENT

DERATING CURVE

RESISTIVE OR INDUCTIVE LOAD

0.375" (9.5mm) LEAD LENGTH

CURRENT, AMPERES

AVERAGE FORWARD RECTIFIED

AMBIENT TEMPERATURE, °C

FIG. 3 - TYPICAL INSTANTANEOUS

FORWARD CHARACTERISTICS

PULSE WIDTH=300µs
1% DUTY CYCLE

TJ=150°C

AMPERES

INSTANTANEOUS FORWARD CURRENT,

INSTANTANEOUS FORWARD VOLTAGE, VOLTS

TJ=25°C

EGP20A - EGP20D

EGP20F & EGP20G

FIG. 2 - MAXIMUM NON-REPETITIVE PEAK

FORWARD SURGE CURRENT

TJ=TJmax.

8.3ms SINGLE HALF SINE-WAVE
(JEDEC Method)

AMPERES

PEAK FORWARD SURGE CURRENT,

NUMBER OF CYCLES AT 60 Hz

FIG. 4 - TYPICAL REVERSE CHARACTERISTICS

TJ=150°C

TJ=125°C

MICROAMPERES

TJ=75°C

INSTANTANEOUS REVERSE LEAKAGE CURRENT,

TJ=25°C

PERCENT OF RATED PEAK REVERSE

VOLTAGE, %

JUNCTION CAPACITANCE, pF

FIG. 5 - TYPICAL JUNCTION CAPACITANCE

EGP20A - EGP20D

EGP20F & EGP20G

REVERSE VOLTA GE, VOLTS

TJ=25°C
f=1.0 MHz
Vsig=50mVp-p

FIG. 6 - TYPICAL TRANSIENT THERMAL IMPEDANCE

TRANSIENT THERMAL IMPEDANCE, °CW

t, PULSE DURATION, sec.