General Semiconductor EGP10D, EGP10C, EGP10G, EGP10B, EGP10A Datasheet

EGP10A THRU EGP10G

®

0.107 (2.7)

0.080 (2.0)

0.034 (0.86)

0.028 (0.71)

DIA.

1.0 (25.4)
MIN.

1.0 (25.4)
MIN.

0.205 (5.2)

0.160 (4.1)

DIA.

GLASS PASSIVATED FAST EFFICIENT RECTIFIER

Reverse Voltage - 50 to 400 Volts Forward Current - 1.0 Ampere

DO-204AL

PATENTED*

Dimensions in inches and (millimeters)

*

Patent No.3,996,602, brazed-lead assembly to Patent No.3,930,306

Glass Encapsulation technique is covered by

MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS

FEATURES

♦ Plastic package has Underwriters Laboratories

Flammability Classification 94V-0

♦ Glass passivated cavity-free junction
♦ Superfast recovery time for high efficiency
♦ Low forward voltage, high current capability
♦ Low leakage current
♦ High surge current capability
♦ High temperature metallurgically

bonded construction

♦ High temperature soldering guaranteed:

300°C/10 seconds, 0.375" (9.5mm) lead length,
5 lbs. (2.3kg) tension

MECHANICAL DATA

Case: JEDEC DO-204AL molded plastic over glass body
Terminals: Plated axial leads, solderable per MIL-STD-750,

Method 2026

Polarity: Color band denotes cathode end
Mounting Position: Any
Weight: 0.012 ounce, 0.3 gram

Ratings at 25°C ambient temperature unless otherwise specified.

SYMBOLS 10A 10B 10C 10D 10F 10G UNITS

Maximum repetitive peak reverse voltage V
Maximum RMS voltage V
Maximum DC blocking voltage V
Maximum average forward rectified current

0.375" (9.5mm) lead length at T

=55°C

A

RRM
RMS

I

(AV)

DC

Peak forward surge current

8.3ms single half sine-wave superimposed

I

FSM

on rated load
Maximum instantaneous forward voltage at 1.0A V
Maximum DC reverse current T

at rated DC blocking voltage T
Maximum reverse recovery time
Typical junction capacitance
Typical thermal resistance
Operating junction and storage temperature range T

NOTES:

(1) Reverse recovery test conditions:I
(2) Measured at 1.0 MH
(3) Thermal resistance from junction to ambient at 0.375" (9.5mm) lead length, P.C.B.mounted

and applied reverse voltage of 4.0 Volts

Z

(NOTE 1)

(NOTE 2)

)R

(NOTE 3

=0.5A, IR=1.0A, Irr=0.25A

F

=25°C 5.0

A

=125°C

A

F

I

R

t

rr

C

J

ΘJA

, T

J

STG

EGP EGP EGP EGP EGP EGP

50 100 150 200 300 400 Volts
35 70 105 140 210 280 Volts
50 100 150 200 300 400 Volts

1.0 Amp

30.0 Amps

0.95 1.25 Volts

100

µA

50.0 ns

22.0 15.0 pF

50.0 °C/W

-65 to +150 °C

4/98

1750100

0

0.5

1.0

25 50 75 125 150

1

10

5.0

10

20

100

0

15

25

30

0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8

0.01

0.1

1

10

50

0.01

0.1

1

10 100

0.1

1

10

100

0.1

1

10 100

0

10

20

30

40

50

60

70

20 80

0.1

10

100

0 40 60 100

1,000

0

1

RATINGS AND CHARACTERISTICS CURVES EGP10A THRU EGP10G

FIG. 1 - MAXIMUM FORWARD CURRENT

AMPERES

AVERAGE FORWARD RECTIFIED CURRENT,

AMPERES

INSTANTANEOUS FORWARD FORWARD CURRENT,

DERATING CURVE

RESISTIVE OR
INDUCTIVE LOAD

0.375” (9.5mm)
LEAD LENGTH

AMBIENT TEMPERATURE, °C

FIG. 3 -TYPICAL INSTANTANEOUS FORWARD

CHARACTERISTICS

PULSE WIDTH=300µs
1% DUTY CYCLE

TJ=150°C

TJ=25°C

EGP10A - EGP10D

EGP10F & EGP10G

PEAK FORWARD SURGE CURRENT,

AMPERES

MICROAMPERES

INSTANTANEOUS REVERSE LEAKAGE CURRENT,

FIG. 2 - MAXIMUM NON-REPETITIVE PEAK

FORWARD SURGE CURRENT

TJ=TJmax.

8.3ms SINGLE HALF SINE WAVE
(JEDEC Method)

NUMBER OF CYCLES AT 60 H

FIG. 4 - TYPICAL REVERSE CHARACTERISTICS

Z

TJ=150°C

TJ=100°C

TJ=25°C

PERCENT OF RATED PEAK REVERSE

VOLTAGE, %

INSTANTANEOUS FORWARD VOLTAGE,

VOLTS

FIG. 5 - TYPICAL JUNCTION CAPACITANCE

JUNCTION CAPACITANCE, pF

EGP10A - EGP10D

EGP10F & EGP10G

REVERSE VOLTA GE, VOLTS

TJ=25°C
f=1.0 MH

Z

Vsig=50mVp-p

FIG. 6 - TYPICAL TRANSIENT THERMAL IMPEDANCE

TRANSIENT THERMAL IMPEDANCE, °CW

t, PULSE DURATION, sec.