General Semiconductor EGF1D, EGF1C, EGF1B, EGF1A Datasheet

EGF1A THRU EGF1D

0.167 (4.24)

0.187 (4.75)

0.0065 (0.17)

0.0105 (0.27)

0.030 (0.76)

0.060 (1.52)

0.006

0.152 TYP.

0.196 (4.98)

0.226 (5.74)

0.094 (2.39)

0.114 (2.90)

0.106 (2.69)

0.118 (3.00)

0.040 (1.02)

0.060 (1.52)

0.098 (2.49)

0.108 (2.74)

ULTRAFAST SURFACE MOUNT RECTIFIER

Reverse Voltage - 50 to 200 Volts Forward Current - 1.0 Ampere

DO-214BA

PATENTED*

Dimensions in inches and (millimeters)

Patent No.3,996,602, brazed-lead assembly by Patent No.3,930,306 and lead

Glass-plastic encapsulation technique is covered by

forming by Patent No. 5,151,846

MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS

Ratings at 25°C ambient temperature unless otherwise specified.

FEATURES

♦ Plastic package has Underwriters Laboratory

Flammability Classification 94V-0

♦ Ideal for surface mount automotive applications ♦ High temperature metallurgically bonded construction ♦ Superfast recovery times for high efficiency ♦ Glass passivated cavity-free junction ♦ Built-in strain relief ♦ Easy pick and place ♦ High temperature soldering guaranteed: 450°C/5 seconds

at terminals

♦ Complete device submersible temperature of

265°C for 10 seconds in solder bath

MECHANICAL DATA

Case: JEDEC DO-214BA molded plastic over glass body Terminals: Solder plated, solderable per MIL-STD-750,

Method 2026

Polarity: Color band denotes cathode end Weight: 0.0048 ounces, 0.120 gram

SYMBOLS EGF1A EGF1B EGF1C EGF1D UNITS

Device Marking Code EA EB EC ED Maximum repetitive peak reverse voltage V Maximum RMS voltage V Maximum DC blocking voltage V Maximum average forward rectified current

=125°C

at T

RRM RMS

(AV)

50 100 150 200 Volts 35 70 105 140 Volts 50 100 150 200 Volts

1.0 Amps

Peak forward surge current

8.3ms single half sine-wave superimposed on I

FSM

30.0 Amps

rated load (JEDEC Method) Maximum instantaneous forward voltage at 1.0A V Maximum DC reverse current T

at rated DC blocking voltage T Typical reverse recovery time Typical junction capacitance Typical thermal resistance

Operating junction and storage temperature range T

NOTES:

(1) Reverse recovery test conditions:IF=0.5A, IR=1.0A, Irr=0.25A (2) Measured at 1.0 MHz and applied V (3) Thermal resistance from junction to ambient and from junction to lead

P.C.B.mounted on 0.2 x 0.2" (5.0 x 5.0mm) copper pad areas

(NOTE 1)

(NOTE 2)

(NOTE 3)

=4.0 Volts

=25°C 5.0

=125°C

ΘJA

ΘJL

J,TSTG

1.0 Volts

50.0

50.0 ns

15.0 pF

85.0

30.0

-65 to +175 °C

µA

°C/W

4/98

1750100

0.5

1.0

25 50 75 125 150

20 80

0.1

100

0 40 60 100

1,000

5.0

100

0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8

0.01

0.1

0.01

0.1

10 100

0.1

100

0.1

10 100

RATINGS AND CHARACTERISTICS CURVES EGF1A THRU EGF1D

FIG. 1 - MAXIMUM FORWARD CURRENT

AMPERES

RESISTIVE OR INDUCTIVE LOAD P.C.B. MOUNTED on

0.2 x 0.2” (5.0 x 5.0mm)

COPPER PAD AREAS

AVERAGE FORWARD RECTIFIED CURRENT,

AMPERES

DERATING CURVE

LEAD TEMPERATURE, °C

FIG. 3 -TYPICAL INSTANTANEOUS FORWARD

PULSE WIDTH=300µs 1% DUTY CYCLE

TJ=25°C

CHARACTERISTICS

TJ=150°C

AMPERES

PEAK FORWARD SURGE CURRENT,

FIG. 2 - MAXIMUM NON-REPETITIVE PEAK

FORWARD SURGE CURRENT

TJ=TJmax.

8.3ms SINGLE HALF SINE WAVE (JEDEC Method)

NUMBER OF CYCLES AT 60 H

FIG. 4 - TYPICAL REVERSE CHARACTERISTICS

TJ=150°C

TJ=100°C

MICROAMPERES

INSTANTANEOUS FORWARD CURRENT,

INSTANTANEOUS FORWARD VOLTAGE,

VOLTS

FIG. 5 - TYPICAL JUNCTION CAPACITANCE

JUNCTION CAPACITANCE, pF

REVERSE VOLTAGE, VOLTS

TJ=25°C f=1.0 MHz Vsig=50mVp-p

INSTANTANEOUS REVERSE LEAKAGE CURRENT,

TRANSIENT THERMAL IMPEDANCE, °C/W

PERCENT OF RATED PEAK REVERSE

VOLTAGE, %

FIG. 6 - TYPICAL TRANSIENT THERMAL IMPEDANCE

t, PULSE DURATION, sec.

TJ=25°C