General Semiconductor BZX55-C75, BZX55-C68, BZX55-C62, BZX55-C56 Datasheet
FEATURES
♦ Silicon Planar Power Zener Diodes
♦ The Zener voltages are graded according to
the international E 24 standard. Standard Zener
voltage tolerance is ±5%. Replace suffix “C” with
“B” for ±2% tolerance. Other voltage tolerances and
other Zener voltages are available upon request.
MECHANICAL DATA
Case: DO-35 Glass Case
Weight: approx. 0.13 g
SYMBOL MIN. TYP. MAX. UNIT
Thermal Resistance
R
thJA
– – 300
(1)
°C/W
Junction to Ambient Air
Forward Voltage
V
F
– – 1.0 Volts
at IF= 100 mA
NOTES:
(1) Valid provided that leads at a distance of 8 mm from case are kept at ambient temperature.
BZX55-C0V8 THRU BZX55-C75
ZENER DIODES
min. 1.083 (27.5)
min. 1.083 (27.5)
max. .150 (3.8)
max.
∅
Cathode
.020 (0.52)
Mark
max.
∅
.079 (2.0)
DO-35
Dimensions are in inches and (millimeters)
12/10/98
SYMBOL VALUE UNIT
Zener Current (see Table “Characteristics”)
Power Dissipation at Tamb = 25°C P
tot
500
(1)
mW
Junction Temperature T
j
175 °C
Storage Temperature Range T
S
– 55 to +175 °C
MAXIMUM RATINGS
Ratings at 25°C ambient temperature unless otherwise specified.
BZX55 – C0V8
(3)
0.73 … 0.83 < 8 < 600 – 0.25 – – – – –
BZX55 – C2V7 2.5 … 2.9 < 85 < 600 – 0.08 – 0.06 < 10000 < 50 1 135
BZX55 – C3V0 2.8 … 3.2 < 85 < 600 – 0.08 – 0.06 < 4000 < 40 1 125
BZX55 – C3V3 3.1 … 3.5 < 85 < 600 – 0.08 – 0.05 < 2000 < 40 1 115
BZX55 – C3V6 3.4 … 3.9 < 85 < 600 – 0.08 – 0.04 < 2000 < 40 1 105
BZX55 – C3V9 3.7 … 4.1 < 85 < 600 – 0.07 – 0.03 < 2000 < 40 1 95
BZX55 – C4V3 4.0 … 4.6 < 75 < 600 – 0.04 – 0.01 < 1000 < 20 1 90
BZX55 – C4V7 4.4 … 5.0 < 60 < 600 – 0.03 +0.01 < 500 < 10 1 85
BZX55 – C5V1 4.8 … 5.4 < 35 < 550 – 0.02 +0.05 < 100 < 2 1 80
BZX55 – C5V6 5.2 … 6.0 < 25 < 450 – 0.01 +0.06 < 100 < 2 1 70
BZX55 – C6V2 5.8 … 6.6 < 10 < 200 0 +0.07 < 100 < 2 2 64
BZX55 – C6V8 6.4 … 7.2 < 8 < 150 +0.01 +0.08 < 100 < 2 3 58
BZX55 – C7V5 7.0 … 7.9 < 7 < 50 +0.01 +0.09 < 100 < 2 5 53
BZX55 – C8V2 7.7 … 8.7 < 7 < 50 +0.01 +0.09 < 100 < 2 6 47
BZX55 – C9V1 8.5 … 9.6 < 10 < 50 +0.02 +0.10 < 100 < 2 7 43
BZX55 – C10 9.4 … 10.6 < 15 < 70 +0.03 +0.11 < 100 < 2 7.5 40
BZX55 – C11 10.4 … 11.6 < 20 < 70 +0.03 +0.11 < 100 < 2 8.5 36
BZX55 – C12 11.4 … 12.7 < 20 < 90 +0.03 +0.11 < 100 < 2 9 32
BZX55 – C13 12.4 … 14.1 < 26 < 110 +0.03 +0.11 < 100 < 2 10 29
BZX55 – C15 13.8 … 15.6 < 30 < 110 +0.03 +0.11 < 100 < 2 11 27
BZX55 – C16 15.3 … 17.1 < 40 < 170 +0.03 +0.11 < 100 < 2 12 24
BZX55 – C18 16.8 … 19.1 < 50 < 170 +0.03 +0.11 < 100 < 2 14 21
BZX55 – C20 18.8 … 21.2 < 55 < 220 +0.03 +0.11 < 100 < 2 15 20
BZX55 – C22 20.8 … 23.3 < 55 < 220 +0.03 +0.11 < 100 < 2 17 18
BZX55 – C24 22.8 … 25.6 < 80 < 220 +0.04 +0.12 < 100 < 2 18 16
BZX55 – C27 25.1 … 28.9 < 80 < 220 +0.04 +0.12 < 100 < 2 20 14
BZX55 – C30 28 … 32 < 80 < 220 +0.04 +0.12 < 100 < 2 22 13
BZX55 – C33 31 … 35 < 80 < 220 +0.04 +0.12 < 100 < 2 24 12
BZX55 – C36 34 … 38 < 80 < 220 +0.04 +0.12 < 100 < 2 27 11
BZX55 – C39 37 … 41
(4)
< 90
(4)
< 500
(5)
+0.04 +0.12 < 100 < 5 28 10
BZX55 – C43 40 … 46
(4)
< 90
(4)
< 600
(5)
+0.04 +0.12 < 100 < 5 32 9.2
BZX55 – C47 44 … 50
(4)
< 110
(4)
< 700
(5)
+0.04 +0.12 < 100 < 5 35 8.5
BZX55 – C51 48 … 54
(4)
< 125
(4)
< 700
(5)
+0.04 +0.12 < 100 < 10 38 7.8
BZX55-C56 52.0 … 60.0
(4)
< 135
(4)
< 1000
(5)
typ. +0.1
(4)
< 100 < 10 42 7.0
BZX55-C62 58.0 … 66.0
(4)
< 150
(4)
< 1000
(5)
typ. +0.1
(4)
< 100 < 10 47 6.4
BZX55-C68 64.0 … 72.0
(4)
< 200
(4)
< 1000
(5)
typ. +0.1
(4)
< 100 < 10 51 5.9
BZX55-C75 70.0 … 79.0
(4)
< 250
(4)
< 1000
(5)
typ. +0.1
(4)
< 100 < 10 56 5.3
BZX55-C0V8 THRU BZX55-C75
ELECTRICAL CHARACTERISTICS
Ratings at 25°C ambient temperature unless otherwise specified.
Type
Zener Voltage
range
(1)
at
IZ= 5 mA
VZV
at
IZ= 5 mA
f = 1 kHz
rzjΩ
Dynamic resistance Temp. coefficient
of Zener Voltage
at
I
Z
= 5 mA
αVZ%/K
at
I
Z
= 1mA
f = 1 kHz
rzjΩ
min max
IR nA IR µA
at
V
R
V
Admissible
Zener
current
(2)
IZMmA
Reverse leakage current
at
T
amb
=
150°C
at
T
amb
=
25°C
NOTES:
(1) Tested with pulses t
p
= 5 ms
(2) Valid provided that leads are kept at ambient temperature at a distance of 8 mm from case
(3) The BZX55–C0V8 is a silicon diode with operation in forward direction. Hence, the index of all parameters should be “F” instead of “Z”.
Connect the cathode lead to the negative pole
(4) at I
Z
= 2.5 mA
(5) at I
Z
= 0.5 mA
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