General Semiconductor BYWF29-50, BYWF29-200, BYWF29-150, BYWF29-100 Datasheet

0.060 (1.52)

0.405 (10.27)

0.383 (9.72)

0.670 (17.2)

0.646 (16.4)

0.191 (4.85)

0.171 (4.35)

0.600 (15.5)

0.580 (14.5)

0.560 (14.22)

0.530 (13.46)

0.037 (0.94)

0.027 (0.69)

0.140 (3.56)

0.130 (3.30)

0.350 (8.89)

0.330 (8.38)

0.188 (4.77)

0.172 (4.36)

0.110 (2.80)

0.100 (2.54)

0.131 (3.39)

0.122 (3.08)

0.110 (2.80)

0.100 (2.54)

0.022 (0.55)

0.014 (0.36)

0.205 (5.20)

0.195 (4.95)

PIN 1

PIN 2

12

PIN

DIA.

DIA.

NEW PRODUCT NEW PRODUCT NEW PRODUCT

BYWF29-50 THRU BYWF29-200

FAST EFFICIENT PLASTIC RECTIFIER

Reverse Voltage - 50 to 200 Volts Forward Current - 8.0 Amperes

ITO-220AC

Dimensions in inches and (millimeters)

MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS

Ratings at 25°C ambient temperature unless otherwise specified.

FEATURES

♦ Plastic package has Underwriters Laboratory

Flammability Classification 94V-0

♦ Glass passivated chip junction
♦ Low power loss
♦ Low leakage current
♦ High surge current capability
♦ Superfast recover y time for high efficiency
♦ High temperature soldering guaranteed:

250°C, 0.25" (6.35mm) from case for 10 seconds

MECHANICAL DATA

Case: JEDEC ITO-220AC molded plastic body over

passivated chip
Terminals: Plated lead solderable per MIL-STD-750,
Method 2026

Polarity: As marked
Mounting Position: Any
Weight: 0.064 ounce, 1.81 grams
Mounting T orque: 5 in. - lbs. max.

SYMBOLS BYWF29-50 BYWF29-100 BYWF29-150 BYWF29-200 UNITS

Maximum repetitive peak reverse voltage V
Maximum RMS voltage V
Maximum DC blocking voltage V
Maximum average forward rectified current

=125°C

at T

C

Peak forward surge current 10ms
single half sine-wave superimposed T

=150°C

J

Maximum instantaneous forward voltage at:

I

=20A, TJ=25°C 1.3

F

I

=8A, TJ=150°C

F

Maximum DC reverse current T
at rated DC blocking voltage T

Maximum reverse recovery time
Typical junction capacitance
Maximum thermal resistance
Operating and storage temperature range T

NOTES:

(1) Reverse recovery test conditions:I
(2) Measured at 1.0 MHZand applied reverse voltage of 4.0 Volts
(3) Thermal resistance from junction to case mounted on heatsink

(NOTE 1)

(NOTE 2)

(NOTE 3)

=1A, VR=30V, di/dt=100A/µs, Irr=10%, I

F

=25°C 10.0

C

=100°C

C

R

J

for measurement of t

RM

RRM
RMS

I

(AV)

I

FSM

V

I
t

C

ΘJC

, T

DC

R

rr

F

J

STG

50 100 150 200 Volts
35 70 105 140 Volts
50 100 150 200 Volts

8.0 Amps

100.0 Amps

0.8

500.0

25.0 ns

45.0 pF

4.5 °C/W

-65 to +150 °C

rr

V olts

µA

4/98

0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2

0.01

0.1

1

10

80

1

10

100

0

20

40

60

80

100

0

50

100

150

0

2.0

4.0

6.0

8.0

10

0.1

1

10

100

20

30

40

50

60

70

80

0

20

40

60

80

100

0.01

0.1

1

10

100

RATINGS AND CHARACTERISTIC CURVES BYWF29-50 THRU BYWF29-200

CURRENT, AMPERES

AVERAGE FORWARD RECTIFIED

AMPERES

FIG. 1 - MAXIMUM FORWARD CURRENT

FIG. 3 - TYPICAL INSTANTANEOUS

DERATING CURVE

RESISTIVE OR INDUCTIVE LOAD

CASE TEMPERATURE, °C

FORWARD CHARACTERISTICS

PULSE WIDTH=300µs
1% DUTY CYCLE

TJ=25°C

AMPERES

PEAK FORWARD SURGE CURRENT,

FIG. 2 - MAXIMUM NON-REPETITIVE PEAK

FORWARD SURGE CURRENT

TJ=TJmax.
10ms SINGLE HALF SINE-WAVE
(JEDEC Method)

NUMBER OF CYCLES AT 50 H

FIG. 4 - TYPICAL REVERSE LEAKAGE

CHARACTERISTICS

TJ=125°C

TJ=100°C

Z

INSTANTANEOUS FORWARD CURRENT,

INSTANTANEOUS FORWARD VOLTAGE,

VOLTS

FIG. 5 - TYPICAL JUNCTION CAPACITANCE

JUNCTION CAPACITANCE, pF

TJ=25°C
f=1.0 MH

Z

Vsig=50mVp-p

INSTANTANEOUS REVERSE LEAKAGE CURRENT,

MICROAMPERES

TJ=25°C

PERCENT OF RATED PEAK REVERSE

VOLTAGE, %

REVERSE VOLT AGE, VOL TS