General Semiconductor BYW29-50, BYW29-200, BYW29-150, BYW29-100 Datasheet

BYW29-50 THRU BYW29-200

0.154 (3.91)

0.148 (3.74)

DIA.

0.113 (2.87)

0.103 (2.62)

0.185 (4.70)

0.175 (4.44)

0.055 (1.39)

0.045 (1.14)

0.145 (3.68)

0.135 (3.43)

0.350 (8.89)

0.330 (8.38)

0.160 (4.06)

0.140 (3.56)

0.037 (0.94)

0.027 (0.68)

0.205 (5.20)

0.195 (4.95)

0.560 (14.22)

0.530 (13.46)

0.022 (0.56)

0.014 (0.36)

0.110 (2.79)

0.100 (2.54)

12

1.148 (29.16)

1.118 (28.40)

0.105 (2.67)

0.095 (2.41)

0.410 (10.41)

0.390 (9.91)

0.635 (16.13)

0.625 (15.87)

0.560 (14

0.530 (13.

PIN

PIN 1

PIN 2

CASE

0.415 (10.54) MAX.

0.370 (9.40)

0.360 (9.14)

FAST EFFICIENT PLASTIC RECTIFIER

Reverse Voltage - 50 to 200 Volts Forward Current - 8.0 Amperes

FEATURES

TO-220AC

Dimensions in inches and (millimeters)

♦ Plastic package has Underwriters Laboratory

Flammability Classification 94V-0

♦ Glass passivated chip junction
♦ Low power loss
♦ Low leakage current
♦ High surge current capability
♦ Superfast recover y time for high efficiency
♦ High temperature soldering guaranteed:

250°C, 0.16” (4.06mm) from case for 10 seconds

MECHANICAL DATA

Case: JEDEC TO-220AC molded plastic body over

passivated chip
Terminals: Plated lead solderable per MIL-STD-750,
Method 2026

Polarity: As marked
Mounting Position: Any
Weight: 0.064 ounce, 1.81 grams

MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS

Ratings at 25°C ambient temperature unless otherwise specified.

SYMBOLS BYW29-50 BYW29-100 BYW29-150 BYW29-200 UNITS

Maximum repetitive peak reverse voltage V
Maximum RMS voltage V
Maximum DC blocking voltage V
Maximum average forward rectified current at T
Peak forward surge current 10ms

single half sine-wave superimposed at T

J

Maximum instantaneous forward voltage at:I

Maximum DC reverse current T
at rated DC blocking voltage T

Maximum reverse recovery time
Typical junction capacitance
Maximum thermal resistance

Operating and storage temperature range T

NOTES:

(1) Reverse recovery test conditions:I
(2) Measured at 1.0 MHZand applied reverse voltage of 4.0 Volts
(3) Thermal resistance from junction to ambient in free air; no heatsink
(4) Thermal resistance from junction to case mounted on heatsink

(NOTE 1)

(NOTE 2)

(NOTE 3)

(NOTE 4)

=1A, VR=30V, di/dt=100A/µs, Irr=10%, I

F

=125°C I

C

=150°C

=20A, TJ=25°C 1.3

F

I

=8A, TJ=150°C

F

=25°C 10.0

C

=100°C

C

R
R

J

for measurement of t

RM

RRM
RMS

(AV)

I

FSM

V

I
t

C

ΘJA
ΘJC

, T

DC

R

rr

F

J

STG

50 100 150 200 Volts
35 70 105 140 Volts
50 100 150 200 Volts

8.0 Amps

100.0 Amps

0.8

500.0

25.0 ns

45.0 pF

20.0

3.0

-65 to +150 °C

rr

V olts

µA

°C/W

4/98

0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2

0.01

0.1

1

10

80

110100

0

20

40

60

80

100

0 50 100 150

0

2.0

4.0

6.0

8.0

10

0.1 1 10 100

20

30

40

50

60

70

80

0204060

80

100

0.01

0.1

1

10

100

RATINGS AND CHARACTERISTIC CURVES BYW29-50 THRU BYW29-200

FIG. 1 - MAXIMUM FORWARD CURRENT

DERATING CURVE

RESISTIVE OR INDUCTIVE LOAD

CURRENT, AMPERES

AVERAGE FORWARD RECTIFIED

CASE TEMPERATURE, °C

FIG. 3 - TYPICAL INSTANTANEOUS

FORWARD CHARACTERISTICS

PULSE WIDTH=300µs

AMPERES

1% DUTY CYCLE

TJ=25°C

FIG. 2 - MAXIMUM NON-REPETITIVE PEAK

FORWARD SURGE CURRENT

TJ=TJmax.
10ms SINGLE HALF SINE-WAVE
(JEDEC Method)

AMPERES

PEAK FORWARD SURGE CURRENT,

NUMBER OF CYCLES AT 50 H

FIG. 4 - TYPICAL REVERSE LEAKAGE

CHARACTERISTICS

Z

TJ=125°C

TJ=100°C

INSTANTANEOUS FORWARD CURRENT,

INSTANTANEOUS FORWARD VOLTAGE,

VOLTS

FIG. 5 - TYPICAL JUNCTION CAPACITANCE

JUNCTION CAPACITANCE, pF

TJ=25°C
f=1.0 MH

Z

Vsig=50mVp-p

MICROAMPERES

INSTANTANEOUS REVERSE LEAKAGE CURRENT,

TJ=25°C

PERCENT OF RATED PEAK REVERSE

VOLTAGE, %

REVERSE VOLT AGE, VOL TS