General Semiconductor BYV32-50, BYV32-200, BYV32-150, BYV32-100 Datasheet

BYV32-50 THRU BYV32-200
0.415 (10.54) MAX.
0.154 (3.91)
0.148 (3.74)
DIA.
0.113 (2.87)
0.103 (2.62)
0.185 (4.70)
0.175 (4.44)
0.055 (1.39)
0.045 (1.14)
0.145 (3.68)
0.135 (3.43)
0.350 (8.89)
0.330 (8.38)
0.160 (4.06)
0.140 (3.56)
0.037 (0.94)
0.027 (0.68)
0.205 (5.20)
0.195 (4.95)
0.560 (14.22)
0.530 (13.46)
0.022 (0.56)
0.014 (0.35)
0.110 (2.79)
0.100 (2.54)
PIN
1
2
3
PIN 1
PIN 3
CASE
1.148 (29.16)
1.118 (28.40)
0.105 (2.67)
0.095 (2.41)
0.410 (10.41)
0.390 (9.91)
0.105 (2.67)
0.095 (2.41)
0.635 (16.13)
0.625 (15.87)
0.560 (14.22)
0.530 (13.46)
PIN 2
0.370 (9.40)
0.360 (9.14)
FAST EFFICIENT PLASTIC RECTIFIER
Reverse Voltage - 50 to 150 Volts Forward Current - 18.0 Amperes
TO-220AB
FEATURES
Dual rectifier construction, positive centertapPlastic package has Underwriters Laboratory
Flammability Classification 94V-0
Glass passivated chip junctionsLow power lossLow forward voltage,
high current capability
High surge capabilitySuperfast recover y time for high efficiencyHigh temperature soldering guaranteed:
250°C, 0.16" (4.06mm) from case for 10 seconds
MECHANICAL DATA
Case: JEDEC TO-220AB molded plastic body over
passivated chips Terminals: Plated leads solderable per MIL-STD-750, Method 2026 Polarity: As marked
Dimensions in inches and (millimeters)
Mounting Position: Any Weight: 0.08 ounce, 2.24 grams
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25°C ambient temperature unless otherwise specified.
SYMBOLS BYV32-50 BYV32-100 BYV32-150 BYV32-200 UNITS
Maximum repetitive peak reverse voltage V Maximum RMS voltage V Maximum DC blocking voltage V Maximum average forward rectified current
=120°C
at T
C
RRM RMS
DC
I
(AV)
Peak forward surge current 10ms single half sine-wave superimposed at at T
=150°C
J
I
FSM
Maximum instantaneous forward voltage per leg at:
IF=20A V I
=5.0A, TJ=100°C 0.85
F
Maximum DC reverse current T at rated DC blocking voltage T
Maximum reverse recovery time per leg Typical junction capacitance per leg
Maximum thermal resistance per leg Operating and storage temperature range T
NOTES:
(1) Reverse recovery test conditions:I (2) Measured at 1.0 MHZand applied reverse voltage of 4.0 Volts (3) Thermal resistance from junction to ambient and from junction to case per leg mounted on heatsink
4/98
=1A VR=30V, di/dt=100A/µs, Irr=10% I
F
=25°C 10.0
C
=100°C
C
(NOTE 1)
(NOTE 2)
(NOTE 3)
F
I
R
t
rr
C
J
R
ΘJA
R
ΘJC
, T
J
STG
RM
50 100 150 200 Volts 35 70 105 140 Volts 50 100 150 200 Volts
18.0 Amps
150.0 Amps
1.15 Volts
600.0
µA
25.0 ns
45.0 pF
20.0
3.0
°C/W
-65 to +150 °C
110100
0
25
50
75
100
125
150
0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8
0.01
0.1
1
10
100
0 50 100 150
0
4.0
8.0
12
16
20 18
110
0
10
20
30
40
50
60
100
0 20 40 60 80 100
0.1
1
10
100
1,000
RATINGS AND CHARACTERISTIC CURVES BYV32-50 THRU BYV32-200
FIG. 2 - MAXIMUM NON-REPETITIVE PEAK
FIG.1 - FORWARD CURRENT DERATING CURVE
RESISTIVE OR INDUCTIVE LOAD
FORWARD SURGE CURRENT PER LEG
TJ=150°C 10ms SINGLE HALF SINE WAVE (JEDEC Method)
AMPERES
AVERAGE FORWARD CURRENT,
CASE TEMPERATURE, °C
FIG. 3 - TYPICAL INSTANTANEOUS FORWARD
CHARACTERISTICS PER LEG
TJ= 25°C PULSE WIDTH = 300µs 1% DUTY CYCLE
AMPERES
INSTANTANEOUS FORWARD CURRENT,
AMPERES
PEAK FORWARD SURGE CURRENT,
NUMBER OF CYCLES AT 50 H
Z
FIG. 4 - TYPICAL REVERSE CHARACTERISTICS
PER LEG
TC=100°C
MICROAMPERES
INSTANTANEOUS FORWARD VOLTAGE,
VOLTS
FIG. 5 - TYPICAL JUNCTION CAPACITANCE PER LEG
JUNCTION CAPACITANCE, pF
REVERSE VOLT AGE, VOL TS
TJ=25°C f=1.0 MH
Z
Vsig=5mVp-p
INSTANTANEOUS REVERSE LEAKAGE CURRENT,
TC=25°C
PERCENT OF RATED PEAK REVERSE
VOLTAGE, %
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