General Semiconductor BYV26E, BYV26D Datasheet

BYV26D AND BYV26E
0.034 (0.86)
0.028 (0.71) DIA.
0.150 (3.8)
0.100 (2.5) DIA.
1.0 (25.4) MIN.
0.240 (6.1)
MAX.
1.0 (25.4) MIN.
GLASS PASSIVATED FAST EFFICIENT RECTIFIER
Reverse Voltage - 800 to 1000 Volts Forward Current - 1.0 Ampere
DO-204AP
PATENTED*
Dimensions in inches and (millimeters)
*
Brazed-lead assembly is covered by Patent No.3,930,306
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25°C ambient temperature unless otherwise specified.
FEATURES
High temperature metallurgically bonded constructionGlass passivated cavity-free junctionSuperfast recovery times for high efficiencyLow forward voltage, high current capabilityCapable of meeting environmental standards of
MIL-S-19500
Hermetically sealed packageLow LeakageHigh surge capabilitySpecified reverse surge capabilityHigh temperature soldering guaranteed:
350°C/10 seconds, 0.375" (9.5mm) lead length, 5 lbs. (2.3kg) tension
MECHANICAL DATA
Case: JEDEC DO-204AP solid glass body Terminals: Plated axial leads, solderable per MIL-STD-750,
Method 2026
Polarity: Color band denotes cathode end Mounting Position: Any Weight: 0.02 ounce, 0.56 gram
SYMBOLS BYV26D BYV26E UNIT
Maximum repetitive peak reverse voltage V Maximum RMS voltage V Maximum DC blocking voltage V Minimum avalanche breakdown voltage at 100µAV
RRM RMS
DC BR
800 1000 Volts 560 700 Volts 800 1000 Volts 900 1100 Volts
Maximum average forward rectified current
0.375" (9.5mm) lead length
(SEE FIG. 1)
I
(AV)
1.0 Amp
Peak forward surge current 10ms single half sine-wave superimposed on rated load I
FSM
30.0 Amps
Maximum instantaneous forward voltage at 1.0A
=25°C V
T
J
T
=175°C 1.30
J
Maximum DC reverse current T at rated DC blocking voltage T
Maximum reverse recovery time Non repetitive peak reverse energy Typical junction capacitance Typical thermal resistance
(NOTE 1)
(NOTE 2)
(NOTE 3)
(NOTE 4) (NOTE 5)
=25°C 5.0
A
=165°C I
A
Operating junction and storage temperature range T
NOTES:
(1) Reverse recovery test conditions:I (2) Peak reverse energy measured at I (3) Measured at 1.0 MH (4) Thermal resistance from junction to ambient at 0.375" (9.5mm) lead length, mounted on P.C.B.with 0.5 x 0.5” (12 x 12mm) copper pads (5) Thermal resistance from junction to lead at 0.375” (9.5mm) lead length with both leads attached to heatsink
and applied reverse voltage of 4.0 Volts
Z
=0.5A, IR=1.0A, Irr=0.25A
F
=400mA, TJ=TJmax. on inductive load, t=20µs
R
E
R R
J
t
RSM
C
ΘJA ΘJL
, T
F
R rr
J
STG
2.50 Volts
150.0 µA
75.0 ns
10.0 mj
15.0 pF
70.0
16.0
-65 to +175 °C
°C/W
4/98
RATINGS AND CHARACTERISTIC CURVES BYV26D AND BYV26E
0
25
50 75
100
125
150
175
0
0.2
0.4
0.6
0.8
1.0
1.2
0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0
0.01
0.1
1
10
20
0.1 1 10 100
1
10
100
1 10 100
1
10
100
0.01 0.1 1 10 100
1
10
100
020406080100
0.01
0.1
1
10
100
1,000
AMPERES
AVERAGE FORWARD RECTIFIEDCURRENT,
AMPERES
FIG. 1 - MAXIMUM FORWARD CURRENT
RESISTIVE OR INDUCTIVE LOAD
MOUNTED ON P.C.B.,
0.375" (9.5mm) LEAD LENGTH on 0.5 x 0.5” (12 x 12mm) COPPER PADS
TA=AMBIENT TEMPERA TURE
FIG. 3 - TYPICAL INSTANTANEOUS FORWARD
DERATING CURVE
TL=LEAD TEMPERATURE LEAD MOUNTED on HEATSINKS
TEMPERATURE, °C
VOLTAGE CHARACTERISTICS
TJ=25°C
FIG. 2 - MAXIMUM NON-REPETITIVE PEAK
FORWARD SURGE CURRENT
10ms, SINGLE HALF SINE-WAVE TJ=TJmax.
AMPERES
PEAK FORWARD SURGE CURRENT,
NUMBER OF CYCLES AT 50 H
FIG. 4 - TYPICAL REVERSE LEAKAGE
CHARACTERISTICS
Z
TJ=165°C
PULSE WIDTH=300µs 1% DUTY CYCLE
INSTANTANEOUS FORWARD CURRENT,
INSTANTANEOUS FORWARD VOLTAGE,
VOLTS
FIG. 5 - TYPICAL JUNCTION CAPACITANCE
f=1.0 MH Vsig=50mVp-p TJ=25°C
JUNCTION CAPACITANCE, pF
REVERSE VOLTA GE, VOLTS
MICROAMPERES
INSTANTANEOUS REVERSE LEAKAGE CURRENT,
TJ=25°C
PERCENT OF RATED PEAK REVERSE
Z
FIG. 6 - TYPICAL TRANSIENT THERMAL
TRANSIENT THERMAL IMPEDANCE, °C/W
VOLTAGE, %
IMPEDANCE
MOUNTED ON P.C.B.,
0.375" (9.5mm) LEAD LENGTH ON 0.47 x 0.47” (12 x 12mm) COPPER PADS
t, PULSE DURATION, sec.
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