General Semiconductor BYM11-800, BYM11-600, BYM11-50, BYM11-400, BYM11-200 Datasheet

...

BYM11-50 THRU BYM11-1000

RGL41A THRU RGL41M

SURFACE MOUNT GLASS PASSIVATED JUNCTION FAST SWITCHING RECTIFIER

Reverse Voltage - 50 to 1000 Volts Forward Current - 1.0 Ampere

FEATURES

♦ Plastic package has Underwriters Laboratory Flammability

Classification 94V-0

♦ Capable of meeting environmental standards of MIL-S-19500 ♦ For surface mount applications ♦ High temperature metallurgically bonded construction ♦ Glass passivated cavity-free junction ♦ Fast switching for high efficiency ♦ High temperature soldering guaranteed:

450°C/5 seconds at terminals. Complete device submersible temperature of 260°C for 10 seconds in solder bath

MECHANICAL DATA

Case: JEDEC DO-213AB molded plastic over glass body Terminals: Plated ter minals, solderable per MIL-STD-750,

Method 2026 Polarity: Two bands indicate cathode end -1st band denotes device type and 2nd band denotes repetitive peak reverse voltage rating

Mounting Position: Any Weight: 0.0046 ounce, 0.116 gram

MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS

Ratings at 25°C ambient temperature unless otherwise specified.

BYM11 BYM11 BYM11 BYM11 BYM11 BYM11 BYM11

SYMBOLS -50 -100 -200 -400 -600 -800 -1000 UNITS

Fast switching time device: 1st band is Red RGL RGL RGL RGL RGL RGL RGL

41A 41B 41D 41G 41J 41K 41M

Polarity color bands (2nd Band) Gray Red Orange Yellow Green Blue Violet Maximum repetitive peak reverse voltage V

RRM

50 100 200 400 600 800 1000 Volts

Maximum RMS voltage V

RMS

35 70 140 280 420 560 700 Volts

Maximum DC blocking voltage V

50 100 200 400 600 800 1000 Volts

Maximum average forward rectified current at T

=55°C I

(AV)

1.0 Amp

Peak forward surge current 8.3ms single half sine-wave superimposed on rated load (JEDEC Method)

FSM

30.0 Amps

Maximum instantaneous forward voltage at 1.0A V

1.3 Volts

Maximum DC reverse current T

=25°C 5.0

at rated DC blocking voltage T

=125°C

50.0

µA

Maximum full load reverse current,

R(AV)

50.0 µA

full cycle average at T

=55°C

Maximum reverse recovery time

(NOTE 1)

150 250 500 ns

Typical junction capacitance

(NOTE 2)

15.0 pF

Maximum thermal resistance

(NOTE 3)

ΘJA

75.0

(NOTE 4)

ΘJT

30.0

°C/W

Operating junction and storage temperature range T

, T

STG

-65 to +175 °C

NOTES:

(1) Reverse recovery test conditions:I

=0.5A, IR=1.0A, Irr=0.25A (2) Measured at 1.0 MHz and applied reverse voltage of 4.0 Volts (3) Thermal resistance from junction to ambient, 0.24 x 0.24” (6.0 x 6.0mm) copper pads to each terminal (4) Thermal resistance from junction to terminal, 0.24 x 0.24” (6.0 x 6.0mm) copper pads to each terminal

10/98

DO-213AB

Dimensions in inches and (millimeters)

Glass-plastic encapsulation is covered by

Patent No.3,996,602 and brazed-lead assembly to Patent No. 3,930,306

PATENTED*

2nd band denotes voltage type

2nd BAND

RATINGS AND CHARACTERISTIC CURVES BYM11-50 THRU BYM11-1000 / RGL41A THR U RGL41M

FIG. 1 - FORWARD CURRENT

DERATING CURVE

TERMINAL TEMPERATURE, °C

AVERAGE FORWARD RECTIFIED CURRENT,

AMPERES

FIG. 2 - MAXIMUM NON-REPETITIVE PEAK

FORWARD SURGE CURRENT

NUMBER OF CYCLES AT 60 H

PEAK FORWARD SURGE CURRENT,

AMPERES

FIG. 3 - TYPICAL INSTANTANEOUS FORWARD

CHARACTERISTICS

FIG. 4 - TYPICAL REVERSE CHARACTERISTICS

INSTANTANEOUS FORWARD CURRENT,

AMPERES

INSTANTANEOUS REVERSE CURRENT,

MICROAMPERES

INSTANTANEOUS FORWARD VOLTAGE,

VOLTS

FIG. 5 - TYPICAL JUNCTION CAPACITANCE

CAPACITANCE, pF

REVERSE VOLTAGE, VOLTS

TJ=TJmax.

8.3ms SINGLE HALF SINE-WAVE (JEDEC Method)

TJ=25°C

PULSE WIDTH=300µs 1% DUTY CYCLE

TJ=25°C f=1.0 MH

Vsig=50mVp-p

RESISTIVE OR INDUCTIVE LOAD

TJ=100°C

PERCENT OF RATED PEAK REVERSE

VOLTAGE, %

FIG. 6 - TYPICAL TRANSIENT THERMAL IMPEDANCE

TRANSIENT THERMAL IMPEDANCE (°C/W)

t, PULSE DURATION, sec

MOUNTED ON 0.20 x 0.27” (5 x 7mm) COPPER PAD AREAS

1.25

1.0

0.75

0.5

0.25

25 50 75 100 125 150 175

100

0.1

0.01

100

0.4 0.6 0.8 1.0

1.2 1.4 1.6

0.1

0.01 0

100

0.1

0.01

100

0.1

100