General Semiconductor BS829 Datasheet
BS829
DMOS Transistors (P-Channel)
SOT-23
.122 (3.1)
.118 (3.0)
.016 (0.4)
3
12
.037(0.95).037(0.95)
.016 (0.4) .016 (0.4)
Dimensions in inches and (millimeters)
Pin configuration
1 = Gate, 2 = Source, 3 = Drain
Top View
)
.056 (1.43
max. .004 (0.1)
)
.052 (1.33
.007 (0.175)
.005 (0.125)
.102 (2.6)
.094 (2.4)
.045 (1.15)
FEATURES
High input impedance
♦
Low gate th reshold voltage
♦
Low drain-sour ce ON resista nce
♦
High-speed s witching
♦
No minority carrier storage time
♦
CMOS logic compatible inpu t
♦
No thermal runaway
♦
No secondary breakdown
♦
.037 (0.95)
SOT-23 Plastic Package
Case:
Weight:
Mark in g
S29
MECHANICAL DATA
approx. 0.008 g
Ratings at
Drain-So urce Voltage –V
Drain-Gate Voltage –V
Gate-Source Voltage (pulsed) V
Drain Current (continuous) at T
Po w er Dissi pation at T
Junction Temperature T
Storage Temperature Range T
1)
Devic e on fiberglass substr ate, see layout
Invers e Diode
Max. Forw a rd Current (cont inuous )
at T
Forward V oltage Drop (typ.)
at V
ambient temperature unless otherwise specified
25 °C
= 50 °C P
SB
= 25 °C
amb
= 0 V, IF = 350 mA, Tj = 25 °C
GS
= 50 °C –I
SB
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Symbol V alue Unit
DSS
DGS
GS
D
tot
j
S
400 V
400 V
±20 V
70 mA
1)
350
mW
150 °C
–65 to +150 °C
Symbol Value Unit
I
F
V
F
350 mA
1.0 V
4/98
Ratings at
ambient temperature unless otherwise specified
25 °C
BS829
ELECTRICAL CHARACTERISTICS
Symbol Min. Typ. Max. Unit
Drain-Source Breakdo wn Voltage
= 100 µA, VGS = 0 V
at –I
D
Gate-Body Leakage Current , F orwa rd
at –V
= 20 V, VDS = 0 V
GSF
Gate-Body Leakage Current , Re v erse
at –V
= 20 V, VDS = 0 V
GSR
Drain Cutoff Curr ent
at –V
= 400 V, VGS = 0 V
DS
Gate-Source Threshold Voltage
= VDS, –ID = 250 µA
at V
GS
Drain-Source ON Resis tance
= 5 V, –ID = 100 mA
at V
GS
Capacitance
at –V
= 25 V, VGS = 0 V, f = 1 MHz
DS
Input Capacit ance
Output Capacit ance
Feedbac k Capacitance
Switching Times
at –V
= 10 V, –VDS = 10 V, RD = 100
GS
Ω
Turn-On Time
Turn-Off Time
Thermal Resistance Junction t o Ambient Air R
1)
Device on fiberglas s subst rate , see la y out
–V
(BR)DSS
–I
GSSF
–I
GSSR
–I
DSS
–V
GS(th)
R
DS(on)
C
iSS
C
OSS
C
rSS
t
on
t
off
thJA
400 430 – V
– – 100 nA
– – 100 nA
– – 500
A
µ
11.52.5V
–4050
–
–
–
–
–
– – 320
200
30
10
10
50
–
–
–
–
–
1)
Ω
pF
pF
pF
ns
ns
K/W
.30 (7.5)
.12 (3)
.04 (1)
.08 (2)
.04 (1)
.59 (15)
.03 (0.8)
.47 (12)
0.2 (5)
Layout fo r R
thJA
.06 (1.5)
.20 (5.1)
test
.08 (2)
Dimensions in inches (millimeters)
Thickness: Fiberglass 0.059 in (1.5 mm)
Copper leads 0.012 in (0.3 mm)
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