General Semiconductor BS208 Datasheet
BS208
DMOS Transistors (P-Channel)
Ratings at
TO-92
.181 (4.6)
.181 (4.6)
min. .492 (12.5)
.022 (0.55)
∅
max.
.098 (2.5)
D
G
Dimensions in inches and (millimeters)
.142 (3.6)
S
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
ambient temperature unless otherwise specified
25 °C
FEATURES
High breakdown v oltage
♦
High input impedance
♦
Low gate th reshold voltage
♦
Low drain-sour ce ON resista nce
♦
High-speed s witching
♦
No minority carrier storage time
♦
CMOS logic compatible inpu t
♦
No thermal runaway
♦
No secondary breakdown
♦
Specially suited for telephone subsets
♦
MECHANICAL DATA
TO-92 Plasti c Package
Case:
Weight:
On special request, this transistor i s also manufacture d i n the pin configurat i on TO-18.
approx. 0.18 g
Symbol Value Unit
Drain-Source Voltage –V
Drain-Gate Voltage –V
Gate-Source Voltage (pulsed) V
Drain Current (continuous) –I
Po w er Dissi pation at T
= 25 °C P
amb
Junction Temperature T
Storage Temperature Range T
1)
Valid provided that leads are kept at ambient temperat ure at a distance o f 2 mm from case.
DSS
DGS
GS
D
tot
j
S
Invers e Diode
Symbol Value Unit
Max. Forw a rd Current (cont inuous )
amb
= 25 °C
at T
Forward V oltage Drop (typ.)
= 0, IF = 0.75 A, Tj = 25 °C
at V
GS
I
F
V
F
240 V
240 V
± 20 V
200 mA
1)
0.83
W
150 °C
–65 t o +150 °C
0.75 A
0.85 V
4/98
Ratings at
ambient temperature unless otherwise specified
25 °C
BS208
ELECTRICAL CHARACTERISTICS
Symbol Min. Typ. Max. Unit
Drain-Source Breakdo wn Voltage
at –I
= 100 µA, V
D
GS
= 0
Gate-Body Leakage Current
at –V
= 15 V, VDS = 0
GS
–V
(BR)DSS
–I
GSS
240 250 – V
––10nA
Drain Cutoff Curr ent
at –V
at –V
= 130 V, VGS = 0
DS
= 70 V, –VGS = 0.2 V
DS
Gate-Source Threshold Voltage
at V
= VDS, –ID = 1 mA
GS
Drain-Source ON Resis tance
at –V
= 5 V, –ID = 100 mA
GS
Thermal Resistance Junction t o Ambient Air R
–I
DSS
–I
DSX
–V
GS(th)
R
DS(ON)
thJA
–
–
–
–
0.8 1.5 2.5 V
–714
– – 150
Capacitances
at –V
Input Capacit ance
Output Capacit ance
Feedbac k Capacitance
Switching Times at –I
Turn-on Time
Fall Time
1)
= 20 V, VGS = 0, f = 1 MHz
DS
= 200 mA, –UGS = 10 V
D
C
iss
C
oss
C
rss
t
on
t
f
–
–
–
–
–
200
30
10
5
15
Valid provided that leads are kept at ambient temperature at a distance of 2 mm from case.
1
25
–
–
–
–
–
A
µ
A
µ
Ω
1)
K/W
pF
pF
pF
ns
ns
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