General Semiconductor BS170 Datasheet
BS170
DMOS Transistors (N-Channel)
Ratings at
TO-92
.181 (4.6)
.181 (4.6)
min. .492 (12.5)
.022 (0.55)
∅
max.
.098 (2.5)
D
G
Dimensions in inches and (millimeters)
.142 (3.6)
S
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
ambient temperature unless otherwise specified
25 °C
FEATURES
♦ High input impedance
♦ High-speed s witching
♦ No minority carrier sto rage ti me
♦ CMOS logic compatible inpu t
♦ No thermal runaway
♦ No secondary breakdown
MECHANICAL DATA
TO-92 Plasti c Package
Case:
Weight:
On special request, this transistor is also manufactured
in the pin c onfiguration T O-18.
approx. 0.18 g
Symbol Value Unit
Drain-So urce Voltage V
Drain-Gate Voltage V
Gate-Source Voltage (pulsed) V
Drain Current (continuous) I
Po w er Dissi pation at T
= 25 °C P
amb
Junction Temperature T
Storage Temperature Range T
1)
Valid provided that leads are kept at ambient temperat ure at a distance o f 2 mm from case.
DSS
DGS
GS
D
tot
j
s
Invers e Diode
Symbol Value Unit
Max. Forw a rd Current (cont inuous )
amb
= 25 °C
at T
Forward V oltage Drop (typ.)
= 0, IF = 0.5 A, Tj = 25 °C
at V
GS
I
F
V
F
60 V
60 V
± 20 V
300 mA
1)
0.83
W
150 °C
–65 t o +150 °C
0.5 A
0.85 V
4/98
Ratings at
ambient temperature unless otherwise specified
25 °C
BS170
ELECTRICAL CHARACTERISTICS
Symbol Min. Typ. Max. Unit
Drain-Source Bre akdo wn Voltage
= 100 µA, V
at I
D
Gate Threshold Voltage at V
= 1 mA
I
D
GS
= 0
GS
= VDS,
Gate-Body Leakage Curre nt
at V
= 15 V, VDS = 0
GS
Drain Cut off Current at V
= 25 V, VGS = 0 I
DS
Drain-Source ON Resis tance
= 10 V, ID = 0.2 A
at V
GS
Thermal Resistance Junction to Ambient Air R
Forwa rd Transconductance
= 10 V, ID = 0.2 A, f = 1 MHz
at V
DS
Input Capa ci ta nce
= 10 V, VGS = 0, f = 1 MHz
at V
DS
V
(BR)DSS
V
GS(th)
I
GSS
DSS
R
DS(ON)
thJA
g
m
C
iss
60 80 – V
1.0 2 3.0 V
––10nA
––0.5µA
–3.55.0
– – 150
– 200 – mS
–30–pF
Switching Times
at V
= 10 V, VDS = 10 V, RD = 100
GS
Turn-On Time
Turn-Off Time
1)
Va lid pro vided that leads are kep t at ambient temper ature at a distance of 2 mm from case.
Ω
t
on
t
off
–
–
5
15
Ω
1)
–
–
K/W
ns
ns
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