General Semiconductor BF823, BF821 Datasheet
BF821, BF8 23
Small Signal Transistors (PNP)
SOT-23
.122 (3.1)
.118 (3.0)
.016 (0.4)
3
12
.037(0.95)
.037(0.95)
.016 (0.4) .016 (0.4)
Dimensions in inches and (millimeters)
Pin configur ation
1 = Base, 2 = Emitter, 3 = Collector.
Top View
)
.056 (1.43
max. .004 (0.1)
)
.052 (1.33
.007 (0.175)
.005 (0.125)
.102 (2.6)
.094 (2.4)
.045 (1.15)
FEATURES
♦
PNP Silicon Epitaxial Planar Transistors
especially suited for application in classB video output stages of TV receivers
and monitors.
♦
As complementary types, the NPN transistors BF820 and BF822 are recommended.
.037 (0.95)
MECHANICAL DATA
SOT-23 Plastic Package
Case:
Weight:
Marking code
BF821 = 1W
BF823 = 1Y
approx. 0.008 g
Ratings at
Collector-Base Voltage BF821
Collector-Emitter Voltage BF823 –V
Collector-Emitter Voltage BF821 –V
Emitter-Base Voltage –V
Collector Current –I
Peak Collector Current –I
Power Dissipation at T
Junction Temperature T
Storage Temperature Range T
1)
Device on fiberglass substrate, see layout
ambient temperature unless otherwise specified
25 °C
= 50 °C P
SB
BF823
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Symbol Value Unit
–V
–V
CBO
CBO
CEO
CER
EBO
C
CM
tot
j
S
300
250
V
V
250 V
300 V
5V
50 mA
100 mA
1)
300
mW
150 °C
–65 to +150 °C
4/98
Ratings at
ambient temperature unless otherwise specified
25 °C
BF821, BF823
ELECTRICAL CHARACTERISTICS
Symbol Min. Typ. Max. Unit
Collector-Base Breakdown Voltage BF821
at –I
= 100 µA, IE = 0 BF823
C
Collector-Emitter Bre a kdown Volt age BF823
= 10 mA, IB = 0
at –I
C
Collector-Emitter Bre a kdown Volt age BF821
at R
= 2.7 kΩ, –IC = 10 mA
BE
Emitter-Base Breakdown Voltage
= 100 µA, IC = 0
at –I
E
Collector-Base Cutoff Cur rent
at –V
= 200 V, IE = 0
CB
Collector-Emitter Cutoff Current
= 2.7 kΩ, –VCE = 250 V
at R
BE
at R
= 2.7 kΩ, –VCE = 200 V, Tj = 150 °C
BE
Collector Saturat ion Voltage
= 30 mA, –IB = 5 mA
at –I
C
DC Current Gain
at –V
= 20 V, –IC = 25 mA
CE
Gain-Bandwidth Product
at –V
= 10 V, –IC = 10 mA
CE
–V
(BR)CBO
–V
(BR)CBO
–V
(BR)CEO
–V
(BR)CER
–V
(BR)EBO
–I
CBO
–I
CER
–I
CER
–V
CEsat
h
FE
f
T
300
250
–
–
–
–
V
V
250 – – V
300 – – V
5––V
––10nA
50
10
nA
µ
A
––0.8V
50 – – –
60 – – MHz
Feedbac k Capac i tance
at –V
= 30 V, –IC = 0, f = 1 MHz
CE
Thermal Resistance Junction to Ambient Air R
1)
Device on fiberglas s substrate, see layou t
.30 (7.5)
.12 (3)
.04 ( 1)
.08 (2)
.04 (1)
.59 (15)
.03 (0.8)
.47 (12 )
0.2 (5)
Layout for R
thJA
.06 (1.5)
.20 (5.1)
test
.08 (2)
Dimensions in inches (millimeters)
Thickness: Fibergla ss 0.059 in (1.5 mm)
Copper leads 0.012 in (0.3 mm)
C
re
thJA
––1.6pF
– – 430
1)
K/W
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