General Semiconductor BC859A, BC859C, BC859B, BC857C, BC858A Datasheet
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BC856 THRU BC859
Small Signal Transistors (PNP)
SOT-23
.122 (3.1)
.118 (3.0)
.016 (0.4)
3
12
.037(0.95)
.037(0.95)
.016 (0.4) .016 (0.4)
Dimensions in inches and (millimeters)
Pin configur ation
1 = Base, 2 = Emitter, 3 = Collector.
Top View
)
.056 (1.43
max. .004 (0.1)
)
.052 (1.33
.007 (0.175)
.005 (0.125)
.102 (2.6)
.094 (2.4)
.045 (1.15)
FEATURES
♦
PNP Silicon Epitaxial Planar Transistors
for switching and AF amplifier appl i cat ions.
Especially suited for automatic insertion in
♦
thick- and th i n - film circuits.
♦
These transistors are subdivided into three groups A, B
and C according to thei r current gain. The type BC856 i s
available in groups A and B, however, the types BC857,
BC858 and BC859 can be supplied in all three groups.
The BC859 is a low noise type.
As complementary types, the NPN transis tors
♦
BC846…BC849 are recommended.
.037 (0.95)
SOT-23 Plastic Package
Case:
Weight:
Marking code
Typ e
BC856A
BC857A
BC858A
MECHANICAL DATA
approx. 0.008 g
Marking
B
B
C
B
C
3A
3B
3E
3F
3G
3J
3K
3L
Type Ma r king
BC859A
B
C
4A
4B
4C
Ratings at
Collector-Base Voltage BC856
Collector-Em itter Vol tage BC856
Collector-Em itter Vol tage BC856
Emitter-Base Voltage –V
Collector Current –I
Peak Coll ect or Current –I
Peak Base Current –I
Peak Emitt er Current I
Power Dissipation at T
Junction Temperature T
Storage Temperature Range T
ambient temperature unless otherwise specified
25 °C
= 50 °C P
SB
BC858, BC859
BC857
BC857
BC858, BC859
BC857
BC858, BC859
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Symbol Value Unit
–V
–V
–V
–V
–V
–V
–V
–V
–V
EM
CBO
CBO
CBO
CES
CES
CES
CEO
CEO
CEO
EBO
C
CM
BM
tot
j
S
80
50
30
80
50
30
65
45
30
V
V
V
V
V
V
V
V
V
5V
100 mA
200 mA
200 mA
200 mA
1)
310
mW
150 °C
–65 to +150 °C
4/98
BC856 THRU BC859
ELECTRICAL CHARACTERISTICS
Ratings at
h-Parameters
at –V
Current Gain Current Gain Group A
Input Impedance Current Gain Group A
Output Admittance Current Gain Group A
Reverse Voltage Transfer Ratio
DC Current Gain
at –V
at –V
Thermal Resistance Junction to Substrat e
Backside
Thermal Resistance Junction to Ambient Air R
Collector Saturation Voltage
at –I
at –I
Base Saturation Voltage
at –I
at –I
Base-Emitter Voltage
at –V
at –V
Collector-Emitter Cutoff Current
at –V
at –V
at –V
at –V
at –V
at –V
at –V
at –V
Gain-Bandwidth Product
at –V
1)
Device on fiberglass substrate, see layout
ambient temperature unless otherwise specified
25 °C
= 5 V, –IC = 2 mA, f = 1 kHz
CE
Current Gain Group A
= 5 V, –IC = 10 µA
CE
Current Gain Group A
= 5 V, –IC = 2 mA
CE
Current Gain Group A
= 10 mA, –IB = 0.5 mA
C
= 100 mA, –IB = 5 mA
C
= 10 mA, –IB = 0.5 mA
C
= 100 mA, –IB = 5 mA
C
= 5 V, –IC = 2 mA
CE
= 5 V, –IC = 10 mA
CE
= 80 V BC856
CE
= 50 V BC857
CE
= 30 V BC858, BC859
CE
= 80 V, Tj = 125 °C BC856
CE
= 50 V, Tj = 125 °C BC857
CE
= 30 V, Tj = 125 °C BC858, BC859
CE
= 30 V
CB
= 30 V, Tj = 150 °C
CB
= 5 V, –IC = 10 mA, f = 100 MHz
CE
B
C
B
C
B
C
B
C
B
C
B
C
Symbol Min. Ty p. Max. Unit
h
h
h
h
h
h
h
h
h
h
h
h
h
h
h
h
h
h
R
–V
–V
–V
–V
–V
–V
–I
–I
–I
–I
–I
–I
–I
–I
f
T
fe
fe
fe
ie
ie
ie
oe
oe
oe
re
re
re
FE
FE
FE
FE
FE
FE
thSB
thJA
CEsat
CEsat
BEsat
BEsat
BE
BE
CES
CES
CES
CES
CES
CES
CBO
CBO
–
–
–
1.6
3.2
6
–
–
–
–
–
–
–
–
–
110
200
420
220
330
600
2.7
4.5
8.7
18
30
60
1.5 · 10
–4
2 · 10
–4
3 · 10
90
150
270
180
290
520
– – 320
– – 450
–
–
–
–
600
–
–
–
–
–
–
–
–
–
90
250
700
900
660
–
0.2
0.2
0.2
–
–
–
–
–
–
–
–
4.5
8.5
15
30
60
110
–4
–
–
–
–
–
–
220
450
800
1)
1)
300
650
–
–
750
800
15
15
15
4
4
4
15
5
– 150 – MHz
–
–
–
k
Ω
k
Ω
k
Ω
S
µ
S
µ
S
µ
–
–
–
–
–
–
–
–
–
K/W
K/W
mV
mV
mV
mV
mV
mV
nA
nA
nA
µA
µA
µA
nA
µA
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