General Semiconductor BB741S Datasheet
BB741S
Tuner Diodes
SOD-323
.012 (0.3)
Cathode Mark
.079 (2.0)
.063 (1.6)
.106 (2.7)
.091 (2.3)
.059 (1.5)
.043 (1.1)
Dimensions in inches and (millimeters)
Top View
max. .004 (0.1)
max. .049 (1.25)
min. .010 (0.25)
FEATURES
Silicon epitaxial planar capacitance diodes
♦
with very wide effectiv e capacitance va riation
for tunig the VHF range and hyperband in
telev ision tuners.
♦
These diodes are avai lable as singles or as
matched sets of two or more units accord in g to
the tracking condition described in the table
of characteristics.
max. .006 (0.15)
SOD-323 Plastic Package
Case:
Weight:
MECHANICAL DATA
approx. 0.004 g
Ratings at
Reverse Voltage V
Ambient Temperat ure T
Storage Temperature Range T
ambient temperature unless otherwise specified
25 °C
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Symbol Value Unit
R
amb
S
32 V
125 °C
–55 to +125 °C
4/98
Ratings at
ambient temperature unless otherwise specified
25 °C
BB741S
ELECTRICAL CHARACTERISTICS
Symbol Min. Typ. Max. Unit
Reverse Breakdown Voltage
= 100 µA
at I
R
Leakage Current
= 30 V
at V
R
V
(BR)R
I
R
32––V
– – 20 nA
Capacitance, f = 1 MHz
= 28 V
at V
R
= 1 V
at V
R
Effect ive Capacitance Ratio, f = 1 MHz
= 1 to 28 V
at V
R
C
tot
C
tot
(1 V)
C
tot
C
(28
tot
2.65
62.0
–
–
2.88
76.0
22.0 – – –
pF
pF
V)
Series Resistance
at f = 300 MHz, C
= 25 pF
tot
Series Inductance L
r
s
S
–1.2–
Ω
–2.5–nH
For any two of six consecutive diodes in the carrier tape, the maximum capacitance de viation in the reverse bias
voltage of V
= 0.5 to 28 V is max. 3.0%
R
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