General Semiconductor BAV21W, BAV20W, BAV19W Datasheet

BAV19W THRU BAV21W
Small Signal Diodes
FEATURES
SOD-123
.022 (0.55)
Cathode Mark
Top Vi ew
.112 (2.85)
.100 (2.55)
.152 (3.85)
.140 (3.55)
.067 (1.70)
.055 (1.40)
Silicon Epitaxial Planar Diodes
For gener al purpose
♦ ♦
These diodes are also available in other case styles including: the DO-35 case with the type designations BAV19 to BAV21, the MiniMELF case with the type designations BAV 100 to BAV103 and the SOT-23 case with the type designation BAS19 - BAS21.
max. .004 (0.1)
max. .053 (1.35)
min. .010 (0.25)
max. .006 (0.15)
Case: Weight:
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at
Reverse Voltage
Forward DC Current at T Rectified Current (Average)
Half W ave Rectification with Resist. Load at T
Repetitive Peak Forward Current at f
Surge For ward Current at t < 1 s, T Power Dissipation at T Junction Temperature T Storage Tem perature Range T
1)
Val id provided that electrodes are kept at ambient temperature (SOD-123)
ambient temperature unless otherwise specified
25 °C
= 25 °C I
amb
= 25 °C and f
amb
50 Hz, Θ = 180 °, T
50 Hz
= 25 °C
amb
= 25 °C P
amb
BAV19W BAV20W BAV21W
= 25 °C I
j
Symbol Value Unit V
R
V
R
V
R
F
I
0
I
FRM
FSM
tot j S
MECHANICAL DATA
SOD-123 Plastic Case
approx. 0.01 g
120 200 250
1)
250
1)
200
1)
625
1A
1)
410
1)
150 –65 to +150
V V V
mA mA
mA
mW °C
1)
°C
4/98
Ratings at
BAV19W THRU BAV21W
ambient temperature unless otherwise specified
25 °C
ELECTRICAL CHARACTERISTICS
Symbol Min. Typ. Max. Unit
Forw ard voltage at I
= 100 mA V
F
F
Leakage Current
= 100 V
at V
R
at V
= 100 V, Tj = 100 °C
R
at V
= 150 V
R
at V
= 150 V, Tj = 100 °C
R
at V
= 200 V
R
= 200 V, Tj = 100 °C
at V
R
Dynamic Forward Resistance
= 10 mA
at I
F
Capacitance
= 0, f = 1 MHz
at V
R
Rev erse Recovery Time from I I
= 30 mA through IR = 30 mA to
F
= 3 mA; RL = 100
R
Thermal Resistance
BAV19W BAV19W BAV20W BAV20W BAV21W BAV21W
I I I I I I
r
C
t
R
R R R R R R
f
tot
rr
thJA
Junct ion to A mbien t Air
1)
Valid provided that electrodes are kept at ambient temperature
––1
– – – – – –
– – – – – –
100 15 100 15 100 15
–5–
V
nA
µ
nA
µ
nA
µ Ω
A A A
–1.5–pF
––50ns
375
1)
K/W
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