General Semiconductor BAT85 Datasheet
BA T85
Schottky Diodes
DO-35
∅
max.
Cathode
Mark
max.
.079 (2.0)
∅
.020 (0.52)
min. 1.083 (27.5)
max. .150 (3.8)
min. 1.083 (27.5)
Dimensions in inches and (millimeters)
FEATURES
For gener al purpose applications .
♦
This diode features low turn-on volt-
♦
age. The devic es are protec ted by a PN
junction guard ring against excessive voltage, such as electrostatic discharges.
♦
This diode is also available in the MiniMELF case
with type designation BAS85.
MECHANICAL DATA
Case:
DO-35 Glass Case
Weight:
approx. 0.13 g
Ratings at
Continuous Reverse Voltage V
Forward Continuous Current at T
Peak Forward Current at T
Surge For ward Current
at t
Power Dissipation at T
Junction Temperature T
Ambient Operating Temperature Range T
Storage Temperature Range T
1)
Valid provided that leads at a distance of 4 mm from case are kept at ambient temperature.
ambient temperature unless otherwise specified
25 °C
amb
< 1 s, T
p
amb
= 25 °C
= 65 °C P
amb
= 25 °C I
amb
= 25 °C I
Symbol Value Unit
R
F
FM
I
FSM
tot
j
amb
S
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
30 V
1)
200
300
600
200
1)
1)
1)
mA
mA
mA
mW
125 °C
–65 to +125 °C
–65 to +150 °C
4/98
Ratings at
ambient temperature unless otherwise specified
25 °C
BA T85
ELECTRICAL CHARACTERISTICS
Symbol Min. Typ. Max. Unit
Rev erse Breakdown Voltage
V
(BR)R
30––V
tested with 10 µA Pulses
Forw ard Voltage
Pulse Test t
at I
= 0.1 mA
F
= 1 mA
at I
F
= 10 mA
at I
F
= 30 mA
at I
F
= 100 mA
at I
F
Leakage Current
= 25 V
at V
R
Capacitance
= 1 V, f = 1 MHz
at V
R
Thermal Resistance
< 300 µs, δ < 2%
p
V
V
V
V
V
I
C
R
R
F
F
F
F
F
tot
thJA
–
–
–
–
–
–
–
–
0.5
–
––2
––10pF
––0.431)K/mW
Junct ion to A mbien t Air
Rev erse Recovery Time
= 10 mA to IR = 10 mA to IR = 1 mA
from I
F
1)
Valid provided that leads at a distance of 4 mm from case are kept at ambient temperature.
t
rr
––5ns
0.24
0.32
0.4
–
0.8
V
V
V
V
V
µ
A
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