General Semiconductor BAT54WS Datasheet
BAT54WS
SCHOTTKY DIODES
FEATURES
♦ These diodes feature very low turn-on voltage
and fast switching.
♦ These devices are protected by a PN
junction guard ring against excessive voltage,
such as electrostatic discharges.
MECHANICAL DATA
Case: SOD-323 Plastic Package
Weight: approx. 0.004g
Marking Code: L4
MAXIMUM RATINGS
Ratings at 25°C ambient temperature unless otherwise specified
SYMBOL VALUE UNIT
Repetitive Peak Reverse Voltage V
RRM
30 Volts
Forward Continuous Current at Tamb = 25 °C I
F
200
1)
mA
Repetitive Peak Forward Current at Tamb = 25 °C I
FRM
300
1)
mA
Surge Forward Current
at tp < 1s, Tamb = 25 °C
I
FSM
600
1)
mA
Power dissipation at Tamb = 25 °C P
tot
150
1)
mW
Maximum Junction Temperature T
j
150 °C
Storage Temperature Range T
S
– 65 to +150 °C
NOTES:
(1) Valid provided that electrodes are kept at ambient temperature
max. .006 (0.15)
min. .010 (0.25)
.012 (0.3)
.076 (1.95)
.112 (2.85)
.059 (1.5)
max. .00 4 (0.1)
max. .049 (1.25)
Cathode Mark
Top View
.100 (2.55)
.065 (1.65)
.043 (1.1)
SOD-323
12/2/98
Dimensions in inches and (millimeters)
NEW PRODUCT NEW PRODUCT NEW PRODUCT
ELECTRICAL CHARACTERISTICS
Ratings at 25°C ambient temperature unless otherwise specified
SYMBOL MIN. TYP. MAX. UNIT
Reverse Breakdown Voltage
tested with 100µA Pulses
V
(BR)R
30 – – Volts
Forward Voltage
Pulse Test tp < 300µs, δ < 2%
at I
F
= 0.1mA V
F
– – 240 mV
at I
F
= 1mA V
F
– – 320 mV
at I
F
= 10mA V
F
– – 400 mV
at I
F
= 30mA V
F
– – 500 mV
at IF = 100mA V
F
– – 1000 mV
Leakage Current
Pulse Test t
p
< 300µs, δ < 2% I
R
––2µA
at VR= 25 V
Capacitance
at VF= 1 V, f = 1 MHz
C
tot
– – 10 pF
Reverse Recovery Time
from I
F
= 10mA through t
rr
––5ns
IR= 10 mA to IR= 1mA, RL= 100 Ω
Thermal Resistance Junction to Ambient Air R
thJA
– – 650
1)
°C/W
NOTES:
(1) Valid provided that electrodes are kept at ambient temperature
BAT54WS
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