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BA T48
Schottky Diodes
DO-35
∅
max.
Cathode
Mark
max.
.079 (2.0)
∅
.020 (0.52)
min. 1.083 (2 7.5)
max. .150 (3.8)
min. 1.083 (27.5)
Dimensions in inches and (millimeters)
FEATURES
For general purpose applications.
♦
These diodes feature very low
♦
turn-on voltage an d f a st switching.
These devices are protected by a PN
junction guard ring against excessive
voltage, such as electrostatic discharges.
♦
This diode is also available in the Mini-MELF
case with type designations LL46.
.
MECHANICAL DATA
DO-35 Glass Case
Case:
Weight:
approx. 0.13 g
Ratings at
Repetitive Peak Reverse Voltage V
Forward Continuous Current at T
Repetitive Peak Forward Current
at t
Surge Forward Current at t
Power Dissipation
Junction Temperature T
Ambient Operating Temperature Range T
Storage Temperature Range T
1)
Valid provided that leads at a distance of 4 mm from case are kept at ambient temperature
ambient temperature unless otherwise specified
25 °C
< 1 s, δ < 0.5, T
p
1)
at T
= 25 °C
amb
p
= 65 °C P
amb
= 25 °C I
amb
< 10 ms, T
= 25 °C I
amb
Symbol Value Unit
40 V
350
1)
1
7.5
330
125 °C
–65 to +125 °C
–65 to +150 °C
F
I
FRM
FSM
amb
RRM
tot
j
S
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
1)
mA
A
1)
1)
A
mW
5/98
216
BA T48
Ratings at
Reverse Breakdown Voltage
tested with 100
Forward Voltage
Pulse Test tp < 300 µs, δ < 2%
at IF = 0.1 mA
at I
at IF = 250 mA
Leakage Current
Pulse Test t
at VR = 10 V
at VR = 10 V, Tj = 60 °C
at V
at VR = 20 V, Tj = 60 °C
at V
at VR = 40 V, Tj = 60 °C
Capacitance
at V
Thermal Resistance Junction to Ambient Air R
1)
Valid provided that leads at a distance of 4 mm from the case are kept at ambient temperature (DO-35)
ambient temperature unless otherwise specified
25 °C
µ
A Pulses
= 10 mA
F
< 300 µs, δ < 2%
p
= 20 V
R
= 40 V
R
= 1 V, f = 1 MHz C
R
Symbol Min. Typ. Max. Unit
V
V
V
V
I
R
I
R
I
R
I
R
I
R
I
R
(BR)R
F
F
F
tot
thJA
40––V
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
0.25
0.40
0.90
2
15
5
25
25
50
–12–pF
––0.3
ELECTRICAL CHARACTERISTICS
V
V
V
µ
A
µ
A
µ
A
µ
A
µ
A
µ
A
1)
K/mW
217