General Semiconductor BAT48 Datasheet

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BA T48
Schottky Diodes
max.
Cathode Mark
max.
.079 (2.0)
.020 (0.52)
min. 1.083 (2 7.5)
max. .150 (3.8)
min. 1.083 (27.5)
Dimensions in inches and (millimeters)
FEATURES
For general purpose applications.
These diodes feature very low
turn-on voltage an d f a st switching. These devices are protected by a PN junction guard ring against excessive voltage, such as electrostatic discharges.
This diode is also available in the Mini-MELF case with type designations LL46. .
MECHANICAL DATA
DO-35 Glass Case
Case: Weight:
approx. 0.13 g
Ratings at
Repetitive Peak Reverse Voltage V Forward Continuous Current at T Repetitive Peak Forward Current
at t Surge Forward Current at t Power Dissipation Junction Temperature T Ambient Operating Temperature Range T Storage Temperature Range T
1)
Valid provided that leads at a distance of 4 mm from case are kept at ambient temperature
ambient temperature unless otherwise specified
25 °C
< 1 s, δ < 0.5, T
p
1)
at T
= 25 °C
amb
p
= 65 °C P
amb
= 25 °C I
amb
< 10 ms, T
= 25 °C I
amb
Symbol Value Unit
40 V 350
1)
1
7.5 330 125 °C –65 to +125 °C –65 to +150 °C
F
I
FRM
FSM
amb
RRM
tot
j
S
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
1)
mA A
1)
1)
A mW
5/98
216
BA T48
Ratings at
Reverse Breakdown Voltage tested with 100
Forward Voltage Pulse Test tp < 300 µs, δ < 2% at IF = 0.1 mA at I at IF = 250 mA
Leakage Current Pulse Test t at VR = 10 V at VR = 10 V, Tj = 60 °C at V at VR = 20 V, Tj = 60 °C at V at VR = 40 V, Tj = 60 °C
Capacitance at V
Thermal Resistance Junction to Ambient Air R
1)
Valid provided that leads at a distance of 4 mm from the case are kept at ambient temperature (DO-35)
ambient temperature unless otherwise specified
25 °C
µ
A Pulses
= 10 mA
F
< 300 µs, δ < 2%
p
= 20 V
R
= 40 V
R
= 1 V, f = 1 MHz C
R
Symbol Min. Typ. Max. Unit V
V V V
I
R
I
R
I
R
I
R
I
R
I
R
(BR)R
F F F
tot
thJA
40––V
– – –
– – – – – –
– – –
– – – – – –
0.25
0.40
0.90
2 15 5 25 25 50
–12–pF ––0.3
ELECTRICAL CHARACTERISTICS
V V V
µ
A
µ
A
µ
A
µ
A
µ
A
µ
A
1)
K/mW
217
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