General Semiconductor BAT42W, BAT43W Service Manual
查询BAT42W供应商
BAT42W, BAT43W
Schottky Diodes
SOD-123
.022 (0.55)
Cathode Mark
Top View
.112 (2.85)
.100 (2.55)
.152 (3.85)
.140 (3.55)
.067 (1.70)
.055 (1.40)
max. .004 (0.1)
max. .053 (1.35)
Dimensions in inches and (millimeters)
min. .010 (0.25)
FEATURES
For gener al purpose applications
♦
These diodes feature very low turn-
♦
on voltage and fast swit ching. These
devi ces are protected b y a PN j unction guard ring
against excessive voltage, s uc h as electrostatic
discharges.
These diodes are also avai lable in the DO-35
♦
case with the type designations BAT42 to BAT43
and in the MiniMELF case with type designations
LL42 to LL43.
max. .006 (0.15)
MECHANICAL DATA
Case:
SOD-123 Plastic Case
Weight:
approx. 0.01 g
Ratings at
Repetitive Peak Rev erse Voltage V
Forward Continuous Current at T
Repetitive Peak Forward Current
at t
p
Surge Forward Current at t
Power Dissipation
Junction Temperature T
Ambient Operating Temperature Range T
Storage Temper at ure Range T
2)
Valid provided that electrodes are kept at ambient temperature
ambient temperature unless otherwise specified
25 °C
< 1 s, δ < 0.5, T
1)
at T
amb
= 25 °C
< 10 ms, T
p
= 65 °C P
amb
= 25 °C I
amb
= 25 °C I
amb
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Symbol Value Unit
30 V
200 mA
500 mA
2)
4
200
2)
A
mW
125 °C
–55 to +125 °C
–55 to +150 °C
F
I
FRM
FSM
j
amb
S
RRM
tot
4/98
Ratings at
ambient temperature unless otherwise specified
25 °C
BAT42W, BAT43W
ELECTRICAL CHARACTERISTICS
Symbol Min. Typ. Max. Unit
Rev erse Breakdown Voltage
V
(BR)R
tested with 100 µA Pulses
Forw ard Voltage
Pulse Test t
at I
= 200 mA
F
= 10 mA
at I
F
at I
= 50 mA
F
at I
= 2 mA
F
at I
= 15mA
F
< 300 µs, δ < 2%
p
BA T42W
BA T42W
BA T43W
BA T43W
V
F
V
F
V
F
V
F
V
F
Leakage Current
Pulse Test t
= 25 V
at V
R
= 25 V, Tj = 100 °C
at V
R
Capacitance
= 1 V, f = 1 MHz
at V
R
Rev erse Recov ery Time
from I
F
= 100
R
L
Detection Efficiency
= 15 KΩ, CL = 300 pF,
at R
L
f = 45 MHz, V
Thermal Resistance Junction to Ambient Air R
2)
Valid provided that electrodes are kept at ambient temperature
< 300 µs, δ < 2%
p
= 10 mA through IR = 10 mA to IR = 1 mA,
Ω
= 2 V
RF
I
I
C
t
η
R
R
tot
rr
v
thJA
30––V
–
–
–
0.26
–
–
–
–
–
–
–
–
–
–
1
0.4
0.65
0.33
0.45
0.5
100
V
V
V
V
V
µ
A
µ
A
–7–pF
––5ns
80––%
––0.3
2)
K/mW
Loading...