BAS16D, BAS16WS
SMALL SIGNAL DIODES
FEATURES
♦ Silicon Epitaxial Planar Diode
♦ Fast switching diode.
♦ Also available in case SOT-23
with designation BAS16.
MECHANICAL DATA
BAS16D
Case: SOD-123 Plastic Case
Weight: approx. 0.01 g
Marking Code: A6
BAS16WS
Case: SOD-323 Plastic Case
Weight: approx. 0.004 g
Marking Code: A6
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25°C ambient temperature unless otherwise specified.
SYMBOL VALUE UNIT
Reverse Voltage V
R
75 V
Peak Reverse Voltage V
RM
100 V
Forward Current (continuous) I
F
250 mA
Non-Repetitive Peak Forward Current
at t = 1µsI
FSM
2.0 A
at t = 1ms I
FSM
1.0 A
at t = 1s I
FSM
0.5 A
Power Dissipation at Tamb = 25 °C BAS16D
P
tot
350
1)
mW
BAS16WS 200
1)
mW
Maxium Junction Temperature T
j
150 °C
Storage Temperature Range T
S
– 65 to +150
1)
°C
1)
Valid provided electrodes are kept at ambient temperture.
SOD-123
(BAS16D)
SOD-323
(BAS16WS)
Dimensions in inches and (millimeters)
NEW PRODUCT NEW PRODUCT NEW PRODUCT
.140 (3.55)
.152 (3.85)
.100 (2.55)
.112 (2.85)
.100 (2.55)
.112 (2.85)
.067 (1.70)
.055 (1.40)
.076 (1.95)
.065 (1.65)
.059 (1.5)
.043 (1.1)
.022 (0.55)
Cathode Mark
Top View
max. .004 (0.1)
.012 (0.3)
Cathode Mark
Top View
max. .053 (1.35)
min. .010 (0.25)
max. .006 (0.15)
max. .00 4 (0.1)
max. .049 (1.25)
min. .010 (0.25)
max. .006 (0.15)
BAS16D, BAS16W
ELECTRICAL CHARACTERISTICS
Ratings at 25 °C ambient temperature unless otherwise specified
Symbol Min. Typ. Max. Unit
Forward Voltage
at I
F
= 1 mA V
F
– – 715 mV
at I
F
= 10 mA V
F
– – 855 mV
at I
F
= 50 mA V
F
– – 1.00 V
at IF= 150 mA V
F
– – 1.25 V
Leakage Current
at V
R
= 25 V, Tj= 150 °C I
R
––30 µA
at V
R
= 75 V I
R
–– 1 µA
at VR= 75 V, Tj = 150 °C I
R
––50 µA
Capacitance C
tot
–– 2 pF
at VR= 0; f = 1 MHz
Reverse Recovery Time t
rr
–– 6 ns
from I
F
= 10 mA to IR= 10 mA
IR= 1 mA, RL= 100Ω
Thermal Resistance BAS16D R
thJA
– – 375
1)
°C/W
Junction to Ambient Air BAS16WS 650
1)
°C/W
1)
Valid provided that electrodes are kept at ambient temperature