General Semiconductor BAS16D, BAS16WS Datasheet

BAS16D, BAS16WS
SMALL SIGNAL DIODES
FEATURES
Silicon Epitaxial Planar DiodeFast switching diode.Also available in case SOT-23
with designation BAS16.
MECHANICAL DATA
BAS16WS Case: SOD-323 Plastic Case Weight: approx. 0.004 g Marking Code: A6
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25°C ambient temperature unless otherwise specified.
SYMBOL VALUE UNIT
Reverse Voltage V
R
75 V
Peak Reverse Voltage V
RM
100 V
Forward Current (continuous) I
F
250 mA
Non-Repetitive Peak Forward Current at t = 1µsI
FSM
2.0 A
at t = 1ms I
FSM
1.0 A
at t = 1s I
FSM
0.5 A
Power Dissipation at Tamb = 25 °C BAS16D
P
tot
350
1)
mW
BAS16WS 200
1)
mW
Maxium Junction Temperature T
j
150 °C
Storage Temperature Range T
S
– 65 to +150
1)
°C
1)
Valid provided electrodes are kept at ambient temperture.
10/21/98
SOD-123
(BAS16D)
SOD-323
(BAS16WS)
Dimensions in inches and (millimeters)
NEW PRODUCT NEW PRODUCT NEW PRODUCT
.140 (3.55)
.152 (3.85)
.100 (2.55)
.112 (2.85)
.100 (2.55)
.112 (2.85)
.067 (1.70) .055 (1.40)
.076 (1.95)
.065 (1.65)
.059 (1.5) .043 (1.1)
.022 (0.55)
Cathode Mark
Top View
max. .004 (0.1)
.012 (0.3)
Cathode Mark
Top View
max. .053 (1.35)
min. .010 (0.25)
max. .006 (0.15)
max. .00 4 (0.1)
max. .049 (1.25)
min. .010 (0.25)
max. .006 (0.15)
BAS16D, BAS16W
ELECTRICAL CHARACTERISTICS
Ratings at 25 °C ambient temperature unless otherwise specified
Symbol Min. Typ. Max. Unit
Forward Voltage at I
F
= 1 mA V
F
715 mV
at I
F
= 10 mA V
F
855 mV
at I
F
= 50 mA V
F
1.00 V
at IF= 150 mA V
F
1.25 V
Leakage Current at V
R
= 25 V, Tj= 150 °C I
R
––30 µA
at V
R
= 75 V I
R
–– 1 µA
at VR= 75 V, Tj = 150 °C I
R
––50 µA
Capacitance C
tot
–– 2 pF
at VR= 0; f = 1 MHz Reverse Recovery Time t
rr
–– 6 ns
from I
F
= 10 mA to IR= 10 mA
IR= 1 mA, RL= 100 Thermal Resistance BAS16D R
thJA
375
1)
°C/W
Junction to Ambient Air BAS16WS 650
1)
°C/W
1)
Valid provided that electrodes are kept at ambient temperature
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