General Semiconductor 2N7000 Service Manual
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2N7000
DMOS Transistors (N-Channel)
Ratings at
TO-92
.181 (4.6)
.181 (4.6)
min. .492 (12.5)
.022 (0.55)
∅
max.
.098 (2.5)
S
G
Dimensions in inches and (millimeters)
.142 (3.6)
D
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
ambient temperature unless otherwise specified
25 °C
FEATURES
♦ High input impedance
♦ Low gate threshold vol t age
♦ Low drain-source ON resistance
♦ High-speed s witc hi ng
♦ No minority carrier storage time
♦ CMOS logic compatible input
♦ No thermal runaway
♦ No secondary breakdown
MECHANICAL DATA
TO-92 Plasti c Package
Case:
Weight:
approx. 0.18 g
Symbol Value Unit
Drain-So urce Voltage V
Drain-Gate Voltage V
Gate-Source Voltage (pulsed) V
Drain Current (continuous) I
Po w er Dissi pation at T
= 25 °C P
amb
Junction Temperature T
Storage Temperature Range T
1)
Valid provided that leads are kept at ambient temperat ure at a distance o f 2 mm from case.
DSS
DGS
GS
D
tot
j
S
Invers e Diode
Symbol Value Unit
Max. Forw a rd Current (cont inuous )
amb
= 25 °C
at T
Forward V oltage Drop (typ.)
= 0, IF = 0.5 A, Tj = 25 °C
at V
GS
I
F
V
F
60 V
60 V
± 20 V
300 mA
1)
830
mW
150 °C
–65 to +150 °C
500 mA
850 mV
4/98
Ratings at
ambient temperature unless otherwise specified
25 °C
2N7000
ELECTRICAL CHARACTERISTICS
Symbol Min. Typ . Max. Unit
Drain-Source Bre akdo wn Voltage
= 100 µA, V
at I
D
GS
= 0 V
Gate-Body Leaka ge Current, Forward
at V
= 20 V, VDS = 0 V
GSF
Gate-Body Leaka ge Current, Reverse
at V
= –20 V, VDS = 0 V
GSR
Drain Cut off Current
at V
= 48 V, VGS = 0 V
DS
Gate-Source Threshold Voltage
at V
= VDS, ID = 1.0 mA
GS
Drain-Source ON Resis tance
at V
= 10 V, ID = 500 mA
GS
V
(BR)DSS
I
GSSF
I
GSSR
I
DSS
V
GS(th)
R
DS(ON)
60 90 – V
––10nA
– – –10 nA
––1µA
0.8 1.5 3 V
–3.55.0
Capacitance
at V
= 25 V, VGS = 0 V, f = 1 MHz
DS
Input Capa ci ta nce
Output Capacitance
Feedbac k Capacitance
C
C
C
iSS
OSS
rSS
–
–
–
60
25
5
Switching Times
= 10 V, VDS = 10 V, RD = 100
at V
GS
Turn-On Time
Turn-Off Time
Thermal Resistance Junction to Ambient Air R
1)
Va lid pro vided that leads are kep t at ambient temper ature at a distance of 2 mm from case.
Ω
t
t
on
off
thJA
–
–
– – 150
10
10
Ω
–
–
–
–
–
1)
pF
pF
pF
ns
ns
K/W
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