General Semiconductor 2N4403 Datasheet
2N4403
SMALL SIGNAL TRANSISTORS (PNP)
FEATURES
¨ PNP Silicon Epitaxial Planar Transistor for
switching and amplifier applications.
¨ As complementary type, the NPN transistor
2N4401 is recommended.
¨ On special request, this transistor is also
manufactured in the pin configuration
TO-18.
¨ This transistor is also available in the SOT-23 case with
the type designation MMBT4403.
MECHANICAL DATA
Case: TO-92 Plastic Package
Weight: approx. 0.18g
MAXIMUM RATINGS AND THERMAL CHARACTERISTICS
Ratings at 25¡C ambient temperature unless otherwise specified
SYMBOL VALUE UNIT
Collector-Base Voltage ÐV
CBO
40 Volts
Collector-Emitter Voltage ÐV
CEO
40 Volts
Emitter-Base Voltage ÐV
EBO
5.0 Volts
Collector Current - Continuous ÐI
C
600 mA
Power Dissipation at T
A
= 25¡C P
tot
625 mW
Derate above 25¡C 5.0 mW/¡C
Power Dissipation at T
C
= 25¡C P
tot
1.5 W
Derate above 25¡C 12 mW/¡C
Thermal Resistance Junction to Ambient Air R
QJA
200 ¡C/W
Thermal Resistance Junction to Case R
QJC
83.3 ¡C/W
Junction Temperature T
j
150 ¡C
Storage Temperature Range T
S
Ð 55 to +150 ¡C
0.181 (4.6)
min. 0.492 (12.5)
0.181 (4.6)
0.142 (3.6)
0.098 (2.5)
max.
Æ
0.022 (0.55)
E
C
B
TO-92
2/17/99
Dimensions in inches and (millimeters)
ADVANCED INFORMATION ADVANCED INFORMATION
ELECTRICAL CHARACTERISTICS
Ratings at 25¡C ambient temperature unless otherwise specified
SYMBOL MIN. .MAX. UNIT
Collector-Base Breakdown Voltage
at ÐIC= 0.1 mA, IE= 0
ÐV
(BR)CBO
40 Ð Volts
Collector-Emitter Breakdown Voltage
(1)
at ÐIC= 1 mA, IB= 0
ÐV
(BR)CEO
40 Ð Volts
Emitter-Base Breakdown Voltage
at ÐIE= 0.1 mA, IC= 0
ÐV
(BR)EBO
5.0 Ð Volts
Collector-Emitter Saturation Voltage
(1)
at ÐIC= 150 mA, ÐIB= 15 mA ÐV
CEsat
Ð 0.40 Volts
at ÐIC= 500 mA, ÐIB= 50 mA ÐV
CEsat
Ð 0.75 Volts
Base-Emitter Saturation Voltage
(1)
at ÐIC= 150 mA, ÐIB= 15 mA ÐV
BEsat
0.75 0.95 Volts
at ÐIC= 500 mA, ÐIB = 50 mA ÐV
BEsat
Ð 1.30 Volts
Collector Cutoff Current
at ÐVEB= 0.4 V, ÐVCE= 35 V
ÐI
CEX
Ð 100 nA
Base Cutoff Current
at ÐVEB= 0.4 V, ÐVCE= 35 V
ÐI
BEV
Ð 100 nA
DC Current Gain
at ÐV
CE
= 1 V, ÐIC = 0.1 mA h
FE
30 Ð Ð
at ÐV
CE
= 1 V, ÐIC= 1 mA h
FE
60 Ð Ð
at ÐV
CE
= 1 V, ÐIC= 10 mA h
FE
100 Ð Ð
at ÐV
CE
= 2 V, ÐIC= 150 mA
(1)
h
FE
100 300 Ð
at ÐVCE= 2 V, ÐIC= 500 mA
(1)
h
FE
20 Ð Ð
Input Impedance
at ÐVCE= 10 V, ÐIC= 1 mA, f = 1 kH
Z
h
ie
1.5 15 kW
Voltage Feedback Ratio
at ÐVCE= 10 V, ÐIC= 1 mA, f = 1 kH
Z
h
re
0.1 á 10
Ð4
8 á 10
Ð4
Ð
Current Gain-Bandwidth Product
at ÐVCE= 10 V, ÐIC= 20 mA, f = 100 MH
Z
f
T
200 Ð MHz
Collector-Base Capacitance
at ÐV
CB
= 10 V, IE=0, f = 1.0 MH
Z
C
CB
Ð 8.5 pF
Emitter-Base Capacitance
at ÐV
EB
= 0.5 V, IC=0, f = 1.0 MH
Z
C
EB
Ð30pF
NOTES
(1) Pulse test: Pulse width ² 300ms - Duty cycle ² 2%
2N4403
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