General Semiconductor 1N5711 Service Manual
10/6/00
1N5711 and 1N6263
Schottky Diodes
Features
• For general purpose applications
• Metal-on-silicon Schottky barrier device which is
protected by a PN junction guard ring. The low forward voltage drop and fast switching make it ideal
for protection of MOS devices, steering, biasing
and coupling diodes for fast switching and low
logic level applications.
• This diode is also available in the MiniMELF case
with type designation LL5711 and LL6263.
Mechanical Data
Case: DO-35 Glass Case
Weight: approx. 0.13g
Packaging Codes/Options:
D7/10K per 13” reel (52mm tape), 20K/box
D8/10K per Ammo tape (52mm tape), 20K/box
Maximum Ratings & Thermal Characteristics Ratings at 25°C ambient temperature unless otherwise specified.
Parameter Symbol Value Unit
Peak Inverse Voltage
1N5711
V
RRM
70
V
1N6263 60
Power Dissipation (Infinite Heatsink) P
tot
400
(1)
mW
Maximum Single Cycle Surge 10 µs Square Wave I
FSM
2.0 A
Thermal Resistance Junction to Ambient Air R
ΘJA
0.3
(1)
°C/mW
Junction Temperature T
j
125
(1)
°C
Storage Temperature Range T
S
–55 to +150
(1)
°C
Electrical Characteristics(T
J
= 25°C unless otherwise noted)
Parameter Symbol Test Condition Min Typ Max Unit
Reverse Breakdown Voltage
1N5711
V
(BR)R
I
R =
10µA
70 — —
V
1N6263 60 — —
Leakage Current I
R
VR= 50V — — 200 nA
Forward Voltage Drop V
F
IF= 1mA — — 0.41
V
IF= 15mA — — 1.0
Junction Capacitance C
tot
VR= 0V, f = 1MHz — — 2.2 pF
Reverse Recovery Time t
rr
IF= IR= 5mA,
—— 1ns
recover to 0.1I
R
Note: (1) Valid provided that leads at a distance of 4mm from case are kept at ambient temperature.
DO-204AH (DO-35 Glass)
Dimensions in inches
and (millimeters)
查询1N6263供应商
Ratings and
Characteristic Curves(T
A
= 25°C unless otherwise noted)
1N5711 and 1N6263
Schottky Diodes
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