General Semiconductor 1N5059GP, 1N5062GP Service Manual

0.034 (0.86)
0.028 (0.71) DIA.
0.150 (3.8)
0.100 (2.5) DIA.
1.0 (25.4) MIN.
0.240 (6.1)
MAX.
1.0 (25.4) MIN.
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Reverse Voltage - 200 to 800 Volts Forward Current - 1. 0 Ampere
PATENTED*
Dimensions in inches and (millimeters)
*
Brazed-lead assembly is covered by Patent No.3,930,306
1N5059 THRU 1N5062
GLASS PASSIVATED JUNCTION RECTIFIER
FEATURES
DO-204AP
High temperature metallurgically bonded
construction
1.0 Ampere operation at TA=75°C
with no thermal runaway
Typical IRless than 0.1µA ♦ Hermetically sealed packageGlass passivated cavity-free junctionCapable of meeting environmental standards of
MIL-S-19500
High temperature soldering guaranteed:
350°C/10 seconds 0.375” (9.5mm) lead length, 5 lbs. (2.3kg) tension
MECHANICAL DATA
Case:JEDEC DO-204AP solid glass body Terminals: Solder plated axial leads, solderable per
MIL-STD-750, Method 2026
Polarity: Color band denotes cathode end Weight: 0.02 ounce, 0.56 gram
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25°C ambient temperature unless otherwise specified.
* Maximum repetitive peak reverse voltage V
Maximum RMS voltage V * Maximum DC blocking voltage V * Maximum average forward rectified current
0.375” (9.5mm) lead length at T
* Peak forward surge current
8.3ms single half sine-wave superimposed I
on rated load (JEDEC Method) * Maximum instantaneous forward voltage at 1.0A V * Maximum full Load reverse current, full cycle
average 0.375” (9.5mm) T
lead length at T * Maximum DC reverse current T
at rated DC blocking voltage T
Typical reverse recovery time
Typical junction capacitance
Typical thermal resistance * Operating junction and storage temperature range T
A
(NOTE 1)
(NOTE 2)
(NOTE 3)
=75°C
=25°C
A
=75°C
A
=25°C 5.0
A
=175°C
A
SYMBOLS 1N5059 1N5060 1N5061 1N5062 UNITS
RRM RMS
I
(AV)
FSM
I
R(AV)
DC
F
200 400 600 800 Volts 140 280 420 560 Volts 200 400 600 800 Volts
1.0 Amp
50.0 Amps
1.2 Volts
5.0 µA
150 100
I
R
t
rr
C
J
R
ΘJA
, T
J
STG
300 200
1.5 µs
15.0 pF
55.0 °C/W
-65 to +175 °C
µA
NOTES:
(1) Reverse recovery test conditions: IF=0.5A, IR=1.0A, lrr=0.25A (2) Measured at 1.0 MHz and applied reverse voltage of 4.0 Volts (3) Thermal resistance from junction to ambient at 0.375” (9.5mm) lead length P.C.B. mounted
*JEDEC registered values
4/98
0 25 50 75 100 125 150 175
0
0.2
0.4
0.6
0.8
1.0
110100
0
10
20
30
40
50
1 10 100
1
10
30
0.4 0.6 0.8 1.0 1.2 1.4 1.6
0.01
0.1
10
1
10
100
1,000
10,000
10
100
1,000
0 20 40 60 80 100
0.01
0.1
1
10
RATINGS AND CHARACTERISTIC CURVES 1N5059 THRU 1N5062
FIG. 1 - FORWARD CURRENT
DERATING CURVE
CURRENT, AMPERES
AVERAGE FORWARD RECTIFIED
AMBIENT TEMPERATURE, °C
FIG. 3 - TYPICAL INSTANTANEOUS
FORWARD CHARACTERISTICS
TJ=150°C
60H
Z
RESISTIVE INDUCTIVE LOAD
0.375" (9.5mm) LEAD LENGTH
PULSE WIDTH=300µs 1% DUTY CYCLE
FIG. 2 - MAXIMUM NON-REPETITIVE PEAK
FORWARD SURGE CURRENT
TJ=TJ max.
8.3ms SINGLE HALF SINE-WAVE (JEDEC Method)
AMPERES
PEAK FORWARD SURGE CURRENT,
NUMBER OF CYCLES AT 60 H
FIG. 4 - TYPICAL REVERSE CHARACTERISTICS
TJ=125°C
Z
TJ=25°C
AMPERES
INSTANTANEOUS FORWARD CURRENT,
INSTANTANEOUS FORWARD VOLTAGE,
VOLTS
FIG. 5 - TYPICAL JUNCTION CAPACITANCE
JUNCTION CAPACITANCE, pF
TJ=25°C f =1.0 MHz Vsig=50mVp-p
TJ=75°C
MICROAMPERES
INSTANTANEOUS REVERSE CURRENT,
PERCENT OF RATED PEAK REVERSE VOLTAGE, %
FIG. 6 - MAXIMUM NON-REPETITIVE
PEAK PULSE REVERSE
AVALANCHE POWER DISSIPATION
POWER, WATTS
PEAK PULSE REVERSE AVALANCHE
TJ=25°C
REVERSE VOLTAGE, VOLTS
td, PULSE DURATION, MICROSECONDS
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