GENERAL MPSA92, MPSA93 DATASHEET

GENERAL MPSA92, MPSA93 DATASHEET

MPSA92, MPSA93

Small Signal Transistors (PNP)

TO-92

.181 (4.6)

.142 (3.6)

 

 

 

 

 

 

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<![endif]>min..492 (12.5) .181 (4.6)

max. .022 (0.55)

 

.098 (2.5)

E

C

B

Dimensions in inches and (millimeters)

FEATURES

PNP Silicon Epitaxial Planar Transistors especially suited as line switch in telephone subsets

and in video output stages of TV receivers and monitors.

As complementary types, the PNP transistors MPSA42 and MPSA43 are recommended.

MECHANICAL DATA

Case: TO-92 Plastic Package

Weight: approx. 0.18 g

MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS

Ratings at 25 °C ambient temperature unless otherwise specified

Absolute Maximum Ratings

 

 

Symbol

Value

Unit

 

 

 

 

 

Collector-Emitter Voltage

MPSA92

–VCEO

300

V

 

MPSA93

–VCEO

200

V

Collector-Base Voltage

MPSA92

–VCBO

300

V

 

MPSA93

–VCBO

200

V

Emitter-Base Voltage

 

–VEBO

5

V

Collector Current

 

–IC

500

mA

 

 

 

 

 

Power Dissipation at Tamb = 25 °C

 

Ptot

6251)

mW

Junction Temperature

 

Tj

150

°C

 

 

 

 

 

Storage Temperature Range

 

TS

–65 to +150

°C

1) Valid provided that lead are kept at ambient temperature at a distance of 2 mm from case.

4/98

MPSA92, MPSA93

ELECTRICAL CHARACTERISTICS

Ratings at 25 °C ambient temperature unless otherwise specified

 

 

Symbol

Min.

Typ.

Max.

Unit

 

 

 

 

 

 

 

Collector-Emitter Breakdown Voltage

MPSA92

–V(BR)CEO

300

V

–IC = 10 mA, IB = 0

MPSA93

–V(BR)CEO

200

V

Collector-Base Breakdown Voltage

MPSA92

–V(BR)CBO

300

V

–IC = 100 μA, IE = 0

MPSA93

–V(BR)CBO

200

V

Emitter-Base Breakdown Voltage

 

–V(BR)EBO

5

V

–IE = 100 μA, IC = 0

 

 

 

 

 

 

Collector-Base Cutoff Current

MPSA92

–ICBO

 

 

 

 

–VCB = 200 V, IE = 0

250

nA

–VCB = 160 V, IE = 0

MPSA93

–ICBO

250

nA

Emitter-Base Cutoff Current

 

–IEBO

100

nA

–VEB = 3 V, IC = 0

 

 

 

 

 

 

DC Current Gain

 

 

 

 

 

 

–IC = 1 mA, –VCE = 10 V

 

hFE

25

–IC = 10 mA, –VCE = 10 V

 

hFE

40

–IC = 30 mA, –VCE = 10 V

 

hFE

25

Collector-Emitter Saturation Voltage

 

–VCEsat

500

mV

–IC = 20 mA, –IB = 2 mA

 

 

 

 

 

 

Base-Emitter Saturation Voltage

 

–VBEsat

900

mV

–IC = 20 mA, –IB = 2 mA

 

 

 

 

 

 

Gain-Bandwidth Product

 

fT

50

MHz

–IC = 10 mA, –VCE = 20 V, f = 100 MHz

 

 

 

 

 

 

Collector-Base Capacitance

MPSA92

 

 

 

 

 

–VCB = 20 V, IE = 0, f = 1 MHz

CCBO

6

pF

 

MPSA93

CCBO

8

pF

Thermal Resistance Junction to Ambient Air

RthJA

2001)

K/W

1) Valid provided that lead are kept at ambient temperature at a distance of 2 mm from case.

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