MPSA92, MPSA93
Small Signal Transistors (PNP)
TO-92
.181 (4.6) |
.142 (3.6) |
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<![endif]>min..492 (12.5) .181 (4.6)
max. .022 (0.55)
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.098 (2.5) |
E |
C |
B
Dimensions in inches and (millimeters)
FEATURES
♦ PNP Silicon Epitaxial Planar Transistors especially suited as line switch in telephone subsets
and in video output stages of TV receivers and monitors.
♦As complementary types, the PNP transistors MPSA42 and MPSA43 are recommended.
MECHANICAL DATA
Case: TO-92 Plastic Package
Weight: approx. 0.18 g
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25 °C ambient temperature unless otherwise specified
Absolute Maximum Ratings
|
|
Symbol |
Value |
Unit |
|
|
|
|
|
Collector-Emitter Voltage |
MPSA92 |
–VCEO |
300 |
V |
|
MPSA93 |
–VCEO |
200 |
V |
Collector-Base Voltage |
MPSA92 |
–VCBO |
300 |
V |
|
MPSA93 |
–VCBO |
200 |
V |
Emitter-Base Voltage |
|
–VEBO |
5 |
V |
Collector Current |
|
–IC |
500 |
mA |
|
|
|
|
|
Power Dissipation at Tamb = 25 °C |
|
Ptot |
6251) |
mW |
Junction Temperature |
|
Tj |
150 |
°C |
|
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|
|
|
Storage Temperature Range |
|
TS |
–65 to +150 |
°C |
1) Valid provided that lead are kept at ambient temperature at a distance of 2 mm from case.
4/98
MPSA92, MPSA93
ELECTRICAL CHARACTERISTICS
Ratings at 25 °C ambient temperature unless otherwise specified
|
|
Symbol |
Min. |
Typ. |
Max. |
Unit |
|
|
|
|
|
|
|
Collector-Emitter Breakdown Voltage |
MPSA92 |
–V(BR)CEO |
300 |
– |
– |
V |
–IC = 10 mA, IB = 0 |
MPSA93 |
–V(BR)CEO |
200 |
– |
– |
V |
Collector-Base Breakdown Voltage |
MPSA92 |
–V(BR)CBO |
300 |
– |
– |
V |
–IC = 100 μA, IE = 0 |
MPSA93 |
–V(BR)CBO |
200 |
– |
– |
V |
Emitter-Base Breakdown Voltage |
|
–V(BR)EBO |
5 |
– |
– |
V |
–IE = 100 μA, IC = 0 |
|
|
|
|
|
|
Collector-Base Cutoff Current |
MPSA92 |
–ICBO |
|
|
|
|
–VCB = 200 V, IE = 0 |
– |
– |
250 |
nA |
||
–VCB = 160 V, IE = 0 |
MPSA93 |
–ICBO |
– |
– |
250 |
nA |
Emitter-Base Cutoff Current |
|
–IEBO |
– |
– |
100 |
nA |
–VEB = 3 V, IC = 0 |
|
|
|
|
|
|
DC Current Gain |
|
|
|
|
|
|
–IC = 1 mA, –VCE = 10 V |
|
hFE |
25 |
– |
– |
– |
–IC = 10 mA, –VCE = 10 V |
|
hFE |
40 |
– |
– |
– |
–IC = 30 mA, –VCE = 10 V |
|
hFE |
25 |
– |
– |
– |
Collector-Emitter Saturation Voltage |
|
–VCEsat |
– |
– |
500 |
mV |
–IC = 20 mA, –IB = 2 mA |
|
|
|
|
|
|
Base-Emitter Saturation Voltage |
|
–VBEsat |
– |
– |
900 |
mV |
–IC = 20 mA, –IB = 2 mA |
|
|
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|
|
Gain-Bandwidth Product |
|
fT |
50 |
– |
– |
MHz |
–IC = 10 mA, –VCE = 20 V, f = 100 MHz |
|
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Collector-Base Capacitance |
MPSA92 |
|
|
|
|
|
–VCB = 20 V, IE = 0, f = 1 MHz |
CCBO |
– |
– |
6 |
pF |
|
|
MPSA93 |
CCBO |
– |
– |
8 |
pF |
Thermal Resistance Junction to Ambient Air |
RthJA |
– |
– |
2001) |
K/W |
1) Valid provided that lead are kept at ambient temperature at a distance of 2 mm from case.