Gemalto M2M ELS81 US User Manual

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Cinterion® ELS81-US

Hardware Interface Description

Version: 01.004 DocId: els81-us_hid_v01.004

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Cinterion® ELS81-US Hardware Interface Description

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Cinterion

ELS81-US Hardware Interface Description

01.004 2017-09-27 els81-us_hid_v01.004 Confidential / Preliminary

GENERAL NOTE

THE USE OF THE PRODUCT INCLUDING THE SOFTWARE AND DOCUMENTATION (THE "PRODUCT") IS SUBJECT TO THE RELEASE NOTE PROVIDED TOGETHER WITH PRODUCT. IN ANY EVENT THE PROVISIONS OF THE RELEASE NOTE SHALL PREVAIL. THIS DOCUMENT CONTAINS INFORMATION ON GEMALTO M2M PRODUCTS. THE SPECIFICATIONS IN THIS DOCUMENT ARE SUBJECT TO CHANGE AT GEMALTO M2M'S DISCRETION. GEMALTO M2M GMBH GRANTS A NONEXCLUSIVE RIGHT TO USE THE PRODUCT. THE RECIPIENT SHALL NOT TRANSFER, COPY, MODIFY, TRANSLATE, REVERSE ENGINEER, CREATE DERIVATIVE WORKS; DISASSEMBLE OR DECOMPILE THE PRODUCT OR OTHERWISE USE THE PRODUCT EXCEPT AS SPECIFICALLY AUTHORIZED. THE PRODUCT AND THIS DOCUMENT ARE PROVIDED ON AN "AS IS" BASIS ONLY AND MAY CONTAIN DEFICIENCIES OR INADEQUACIES. TO THE MAXIMUM EXTENT PERMITTED BY APPLICABLE LAW, GEMALTO M2M GMBH DISCLAIMS ALL WARRANTIES AND LIABILITIES. THE RECIPIENT UNDERTAKES FOR AN UNLIMITED PERIOD OF TIME TO OBSERVE SECRECY REGARDING ANY INFORMATION AND DATA PROVIDED TO HIM IN THE CONTEXT OF THE DELIVERY OF THE PRODUCT. THIS GENERAL NOTE SHALL BE GOVERNED AND CONSTRUED ACCORDING TO GERMAN LAW.

Transmittal, reproduction, dissemination and/or editing of this document as well as utilization of its contents and communication thereof to others without express authorization are prohibited. Offenders will be held liable for payment of damages. All rights created by patent grant or registration of a utility model or design patent are reserved.

Trademark Notice

Gemalto, the Gemalto logo, are trademarks and service marks of Gemalto and are registered in certain countries. Microsoft and Windows are either registered trademarks or trademarks of Microsoft Corporation in the United States and/or other countries. All other registered trademarks or trademarks mentioned in this document are property of their respective owners.

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Contents

1 Introduction.................................................................................................................9

1.1 Key Features at a Glance .................................................................................. 9

1.2 ELS81-US System Overview ........................................................................... 12

1.3 Circuit Concept ................................................................................................ 13

2 Interface Characteristics ..........................................................................................15

2.1 Application Interface ........................................................................................ 15

2.1.1 Pad Assignment.................................................................................. 15

2.1.2 Signal Properties................................................................................. 17

2.1.2.1 Absolute Maximum Ratings ................................................ 23

2.1.3 USB Interface...................................................................................... 24

2.1.3.1 Reducing Power Consumption............................................ 25

2.1.4 Serial Interface ASC0 ......................................................................... 26

2.1.5 Serial Interface ASC1 ......................................................................... 28

2.1.6 UICC/SIM/USIM Interface................................................................... 30

2.1.6.1 Enhanced ESD Protection for SIM Interface....................... 32

2.1.7 RTC Backup....................................................................................... 33

2.1.8 GPIO Interface .................................................................................... 34

2.1.9 I

2.1.10 SPI Interface ....................................................................................... 38

2.1.11 PWM Interfaces .................................................................................. 39

2.1.12 Pulse Counter ..................................................................................... 39

2.1.13 Control Signals.................................................................................... 39

2.2 RF Antenna Interface....................................................................................... 42

2.2.1 Antenna Interface Specifications ........................................................ 42

2.2.2 Antenna Installation ............................................................................ 44

2.2.3 RF Line Routing Design...................................................................... 45

2.3 Sample Application .......................................................................................... 51

2.3.1 Sample Level Conversion Circuit........................................................ 53

C Interface ........................................................................................ 36

2.1.13.1 Status LED .......................................................................... 39

2.1.13.2 Power Indication Circuit ...................................................... 40

2.1.13.3 Host Wakeup....................................................................... 40

2.1.13.4 Fast Shutdown .................................................................... 41

2.2.3.1 Line Arrangement Examples ............................................... 45

2.2.3.2 Routing Example................................................................. 50

3 Operating Characteristics........................................................................................54

3.1 Operating Modes ............................................................................................. 54

3.2 Power Up/Power Down Scenarios................................................................... 55

3.2.1 Turn on ELS81-US.............................................................................. 55

3.2.1.1 Connecting ELS81-US BATT+ Lines .................................. 55

3.2.1.2 Switch on ELS81-US Using ON Signal ............................... 57

3.2.1.3 Automatic Power On ........................................................... 58

3.2.2 Restart ELS81-US .............................................................................. 59

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3.2.2.1 Restart ELS81-US via AT+CFUN Command ...................... 59

3.2.2.2 Restart ELS81-US Using EMERG_RST ............................. 60

3.2.3 Signal States after Startup .................................................................. 61

3.2.4 Turn off ELS81-US.............................................................................. 62

3.2.4.1 Switch off ELS81-US Using AT Command.......................... 62

3.2.5 Automatic Shutdown ........................................................................... 64

3.2.5.1 Thermal Shutdown .............................................................. 64

3.2.5.2 Undervoltage Shutdown...................................................... 65

3.2.5.3 Overvoltage Shutdown........................................................ 65

3.3 Power Saving................................................................................................... 66

3.3.1 Power Saving while Attached to WCDMA Networks .......................... 66

3.3.2 Power Saving while Attached to LTE Networks.................................. 67

3.3.3 Wake-up via RTS0.............................................................................. 68

3.4 Power Supply................................................................................................... 69

3.4.1 Power Supply Ratings......................................................................... 69

3.4.2 Measuring the Supply Voltage (VBATT+)........................................... 72

3.4.3 Monitoring Power Supply by AT Command ........................................ 72

3.5 Operating Temperatures.................................................................................. 73

3.6 Electrostatic Discharge .................................................................................... 74

3.6.1 ESD Protection for Antenna Interfaces ............................................... 74

3.7 Blocking against RF on Interface Lines ........................................................... 75

3.8 Reliability Characteristics................................................................................. 77

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4 Mechanical Dimensions, Mounting and Packaging...............................................78

4.1 Mechanical Dimensions of ELS81-US ............................................................. 78

4.2 Mounting ELS81-US onto the Application Platform ......................................... 80

4.2.1 SMT PCB Assembly ........................................................................... 80

4.2.1.1 Land Pattern and Stencil..................................................... 80

4.2.1.2 Board Level Characterization.............................................. 82

4.2.2 Moisture Sensitivity Level ................................................................... 82

4.2.3 Soldering Conditions and Temperature .............................................. 83

4.2.3.1 Reflow Profile ...................................................................... 83

4.2.3.2 Maximum Temperature and Duration.................................. 84

4.2.4 Durability and Mechanical Handling.................................................... 85

4.2.4.1 Storage Conditions.............................................................. 85

4.2.4.2 Processing Life.................................................................... 86

4.2.4.3 Baking ................................................................................. 86

4.2.4.4 Electrostatic Discharge ....................................................... 86

4.3 Packaging ........................................................................................................ 87

4.3.1 Tape and Reel .................................................................................... 87

4.3.1.1 Orientation........................................................................... 87

4.3.1.2 Barcode Label ..................................................................... 88

4.3.2 Shipping Materials .............................................................................. 89

4.3.2.1 Moisture Barrier Bag ........................................................... 89

4.3.2.2 Transportation Box.............................................................. 91

4.3.3 Trays ................................................................................................... 92

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5 Regulatory and Type Approval Information...........................................................93

5.1 Directives and Standards................................................................................. 93

5.2 SAR requirements specific to portable mobiles ............................................... 96

5.3 Reference Equipment for Type Approval......................................................... 97

5.4 Compliance with FCC and IC Rules and Regulations ..................................... 98

6 Document Information............................................................................................100

6.1 Revision History ............................................................................................. 100

6.2 Related Documents ....................................................................................... 100

6.3 Terms and Abbreviations ............................................................................... 100

6.4 Safety Precaution Notes ................................................................................ 104

7 Appendix..................................................................................................................105

7.1 List of Parts and Accessories......................................................................... 105

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Tables

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Tables

Table 1: Pad assignments............................................................................................ 16

Table 2: Signal properties ............................................................................................ 17

Table 3: Absolute maximum ratings............................................................................. 23

Table 4: Signals of the SIM interface (SMT application interface) ............................... 30

Table 5: GPIO lines and possible alternative assignment............................................ 34

Table 6: Host wakeup lines.......................................................................................... 40

Table 7: Return loss in the active band........................................................................ 42

Table 8: RF Antenna interface UMTS/LTE (at operating temperature range) ............. 42

Table 9: Overview of operating modes ........................................................................ 54

Table 10: Signal states................................................................................................... 61

Table 11: Temperature dependent behavior.................................................................. 64

Table 12: Voltage supply ratings.................................................................................... 69

Table 13: Current consumption ratings (typical ratings to be confirmed)....................... 70

Table 14: Board temperature ......................................................................................... 73

Table 15: Electrostatic values ........................................................................................ 74

Table 16: EMI measures on the application interface.................................................... 76

Table 17: Summary of reliability test conditions............................................................. 77

Table 18: Reflow temperature ratings............................................................................ 84

Table 19: Storage conditions ......................................................................................... 85

Table 20: Directives ....................................................................................................... 93

Table 21: Standards of North American type approval .................................................. 93

Table 22: Standards of European type approval............................................................ 93

Table 23: Requirements of quality ................................................................................. 94

Table 24: Standards of the Ministry of Information Industry of the

People’s Republic of China............................................................................ 94

Table 25: Toxic or hazardous substances or elements with defined

concentration limits ........................................................................................ 95

Table 26: List of parts and accessories........................................................................ 105

Table 27: Molex sales contacts (subject to change) .................................................... 106

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Figures

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Figures

Figure 1: ELS81-US system overview........................................................................... 12

Figure 2: ELS81-US block diagram............................................................................... 13

Figure 3: ELS81-US RF section block diagram............................................................. 14

Figure 4: Numbering plan for connecting pads (bottom view)....................................... 15

Figure 5: USB circuit ..................................................................................................... 24

Figure 6: Serial interface ASC0..................................................................................... 26

Figure 7: ASC0 startup behavior................................................................................... 27

Figure 8: Serial interface ASC1..................................................................................... 28

Figure 9: ASC1 startup behavior................................................................................... 29

Figure 10: External UICC/SIM/USIM card holder circuit ................................................. 31

Figure 11: SIM interface - enhanced ESD protection...................................................... 32

Figure 12: RTC supply variants....................................................................................... 33

Figure 13: GPIO startup behavior ................................................................................... 35

Figure 14: I Figure 15: I

Figure 16: Characteristics of SPI modes......................................................................... 38

Figure 17: Status signaling with LED driver .................................................................... 39

Figure 18: Power indication circuit .................................................................................. 40

Figure 19: Fast shutdown timing ..................................................................................... 41

Figure 20: Antenna pads (bottom view) .......................................................................... 44

Figure 21: Embedded Stripline with 65µm prepreg (1080) and 710µm core .................. 45

Figure 22: Micro-Stripline on 1.0mm standard FR4 2-layer PCB - example 1 ................ 46

Figure 23: Micro-Stripline on 1.0mm Standard FR4 PCB - example 2............................ 47

Figure 24: Micro-Stripline on 1.5mm Standard FR4 PCB - example 1............................ 48

Figure 25: Micro-Stripline on 1.5mm Standard FR4 PCB - example 2............................ 49

Figure 26: Routing to application‘s RF connector - top view........................................... 50

Figure 27: Schematic diagram of ELS81-US sample application.................................... 52

Figure 28: Sample level conversion circuit...................................................................... 53

Figure 29: Sample circuit for applying power using an external µC ................................ 56

Figure 30: ON circuit options........................................................................................... 57

Figure 31: ON timing ....................................................................................................... 58

Figure 32: Automatic ON circuit based on voltage detector - option 1............................ 58

Figure 33: Automatic ON circuit based on voltage detector - option 2............................ 59

Figure 34: Emergency restart timing ............................................................................... 60

Figure 35: Switch off behavior......................................................................................... 63

Figure 36: Power saving and paging in WCDMA networks............................................. 66

Figure 37: Power saving and paging in LTE networks.................................................... 67

Figure 38: Wake-up via RTS0......................................................................................... 68

Figure 39: Position of reference points BATT+ and GND ............................................... 72

Figure 40: ESD protection for RF antenna interface ....................................................... 74

Figure 41: EMI circuits..................................................................................................... 75

Figure 42: ELS81-US– top and bottom view................................................................... 78

Figure 43: Dimensions of ELS81-US (all dimensions in mm) ......................................... 79

Figure 44: Land pattern (top view) .................................................................................. 80

Figure 45: Recommended design for 110µm thick stencil (top view).............................. 81

Figure 46: Recommended design for 150µm thick stencil (top view).............................. 81

Figure 47: Reflow Profile................................................................................................. 83

Figure 48: Carrier tape .................................................................................................... 87

Figure 49: Reel direction ................................................................................................. 87

Figure 50: Barcode label on tape reel ............................................................................. 88

C interface connected to V180 .................................................................... 36

C startup behavior ....................................................................................... 37

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Figures

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Figure 51: Moisture barrier bag (MBB) with imprint......................................................... 89

Figure 52: Moisture Sensitivity Label .............................................................................. 90

Figure 53: Humidity Indicator Card - HIC ........................................................................ 91

Figure 54: Tray dimensions............................................................................................. 92

Figure 55: Reference equipment for Type Approval ....................................................... 97

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1 Introduction

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1 Introduction

This document1 describes the hardware of the Cinterion® ELS81-US module. It helps you quickly retrieve interface specifications, electrical and mechanical details and information on the requirements to be considered for integrating further components.

1.1 Key Features at a Glance

Feature Implementation

General

Frequency bands UMTS/HSPA+: Triple band, 850 (BdV) / AWS (BdIV) / 1900MHz (BdII)

LTE: Quad band, 700 (Bd12) / 850 (Bd5) / AWS (Bd4) / 1900MHz (Bd2)

Output power (according to Release 99)

Output power (according to Release 8)

Power supply 3.0V to 4.5V

Operating temperature (board temperature)

Physical Dimensions: 27.6mm x 25.4mm x 2.2mm

RoHS All hardware components fully compliant with EU RoHS Directive

LTE features

3GPP Release 9 UE CAT 4 supported

HSPA features

Class 3 (+24dBm +1/-3dB) for UMTS 1900,WCDMA FDD BdII Class 3 (+24dBm +1/-3dB) for UMTS AWS, WCDMA FDD BdIV Class 3 (+24dBm +1/-3dB) for UMTS 850, WCDMA FDD BdV

Class 3 (+23dBm ±2dB) for LTE 1900,LTE FDD Bd2 Class 3 (+23dBm ±2dB) for LTE AWS, LTE FDD Bd4 Class 3 (+23dBm ±2dB) for LTE 850, LTE FDD Bd5 Class 3 (+23dBm ±2dB) for LTE 700, LTE FDD Bd12

Normal operation: -30°C to +85°C Extended operation: -40°C to +90°C

Weight: approx. 4g

DL 150Mbps, UL 50Mbps

3GPP Release 8 DL 7.2Mbps, UL 5.7Mbps

HSDPA Cat.8 / HSUPA Cat.6 data rates Compressed mode (CM) supported according to 3GPP TS25.212

UMTS features

3GPP Release 4 PS data rate – 384 kbps DL / 384 kbps UL

CS data rate – 64 kbps DL / 64 kbps UL

1. The document is effective only if listed in the appropriate Release Notes as part of the technical documentation delivered with your Gemalto M2M product.

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1.1 Key Features at a Glance

Feature Implementation

SMS Point-to-point MT and MO

Cell broadcast Text and PDU mode Storage: SIM card plus SMS locations in mobile equipment

Software

AT commands Hayes 3GPP TS 27.007, TS 27.005, Gemalto M2M

AT commands for RIL compatibility

Java™ Open Platform Java™ Open Platform with

• Java™ profile IMP-NG & CLDC 1.1 HI

• Secure data transmission via HTTPS/SSL

• Multi-threading programming and multi-application execution

Major benefits: seamless integration into Java applications, ease of programming, no need for application microcontroller, extremely cost-efficient hardware and software design – ideal platform for industrial applications.

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The memory space available for Java programs is 30MB in the flash file system and 18MB RAM. Application code and data share the space in the flash file system and in RAM.

Microsoft™ compatibility RIL for Pocket PC and Smartphone

SIM Application Toolkit SAT letter classes b, c, e; with BIP

Firmware update Generic update from host application over ASC0 or USB modem.

Interfaces

Module interface Surface mount device with solderable connection pads (SMT application

interface). Land grid array (LGA) technology ensures high solder joint reliability and allows the use of an optional module mounting socket.

For more information on how to integrate SMT modules see also [3]. This application note comprises chapters on module mounting and application layout issues as well as on additional SMT application development equipment.

USB USB 2.0 High Speed (480Mbit/s) device interface, Full Speed (12Mbit/s)

compliant

2 serial interfaces ASC0 (shared with GPIO lines):

• 8-wire modem interface with status and control lines, unbalanced, asynchronous

• Adjustable baud rates: 1,200bps to 921,600bps

• Autobauding: 1,200bps to 230,400bps

• Supports RTS0/CTS0 hardware flow control.

ASC1 (shared with GPIO lines):

• 4-wire, unbalanced asynchronous interface

• Adjustable baud rates: 1,200bps to 921,60bps

• Autobauding: 1,200bps to 230,400bps

• Supports RTS1/CTS1 hardware flow control

UICC interface Supported SIM/USIM cards: 3V, 1.8V

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1.1 Key Features at a Glance

Feature Implementation

GPIO interface 22 GPIO lines comprising:

13 lines shared with ASC0, ASC1 and SPI lines, with network status indication, PWM functionality, fast shutdown and pulse counter 5 GPIO lines not shared

C interface Supports I2C serial interface

SPI interface Serial peripheral interface, shared with GPIO lines

Antenna interface pads 50. UMTS/LTE main antenna, UMTS/LTE Rx Diversity antenna

Power on/off, Reset

Power on/off Switch-on by hardware signal ON

Switch-off by AT command Switch off by hardware signal FST_SHDN instead of AT command Automatic switch-off in case of critical temperature or voltage conditions

Reset Orderly shutdown and reset by AT command

Emergency reset by hardware signal EMERG_RST

Special features

Real time clock Timer functions via AT commands

Evaluation kit

Evaluation module ELS81-US module soldered onto a dedicated PCB that can be connected

to an adapter in order to be mounted onto the DSB75.

DSB75 DSB75 Development Support Board designed to test and type approve

Gemalto M2M modules and provide a sample configuration for application engineering. A special adapter is required to connect the ELS81-US evaluation module to the DSB75.

1. HTTP/SecureConnection over SSL version 3.0 and TLS versions 1.0, 1.1, and 1.2 are supported. For details please refer to Java User’s Guide for Cinterion

ELS81-US.

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GPIO

interface

I2C

USB

ASC0 lines

ASC1/SPI

CONTROL

RTC

POWER

Rx diversity

antenna

(UMTS/LTE)

Module

SIM interface

(with SIM det ection)

SIM card

Application

Power supply

Backup supply

Emergency reset

Serial in terface/ SPI interface

Serial modem interface lines

I2C

GPIO

USB

Rx diversity

Status LED

DAC (PWM) PWM

Fast

shutdown

Fast shutdown

COUNTER

Pulse counter

ASC0 lines

Serial modem inte rfac e line s/ SPI interface

Main ante nn a

(UMTS/LTE)

Main ante nn a

1.2 ELS81-US System Overview

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Figure 1: ELS81-US system overview

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SD1 SD2

SD2

LDOs

PMU

LDOs

Reset_BB

SD3

I2CDAT

I2CCLK

USB

GPIO

SIM

CCIN

LPDDR2

SDRAM

FLASH

VDD

ADQ0 ~ ADQ15

DDR_ CA_0~DDR _CA_9

DDR _DQ_ 0~DDR _DQ_1 5

Con trol

CCIN

SIM

GPIO

ASC0

USB

I2C

ON circuit

EMERG _RST

BATT+

RX/TX

RF control

V180

Baseband

controller

and

Power

management

USIF1/

GPIO

FST_SHDWN

ASC1/G PIO/

SPI

USIF3

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1.3 Circuit Concept

Figure 2 and Figure 3 show block diagrams of the ELS81-US module and illustrate the major

functional components:

Figure 2: ELS81-US block diagram

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LTE / UMTS RF transceiver

SKY77622

SKY13525

Band2

SAW Filter

Band4

SAW Filter

Band5

SAW Filter

Band12

SAW Filter

Diversity Antenna

Band2

Duplexer

Band4

Duplexer

Band5

Duplexer

Band12

Duplexer

Antenna

Coupler

B2_OUT

B4_OUT

B5_OUT

B12_OUT

4G_HB_IN

2G/3G_HB_IN

4G_LB_IN

2G/3G_LB_IN

TQ_H

TP_H

TQ_L

TP_L

RX_M1

RX_M1X

RX_H4

RX_H4X

RX_L1

RX_L1X

RX_L3

RX_L3X

4G_HB_IN

TRX4

TRX6

TRX5

TRX2

TRX1

TRX3

TRX5

PA DCDC

SKY87000

BATT+

FBR_RF2

MAIN_FWD

MIPI

26MHz

RX/TX

BATT+

V180

RF control

1.3 Circuit Concept

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Figure 3: ELS81-US RF section block diagram

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Supply pads: BATT+

Control pads

GND pads

ASC0 pads

Combined GPIO/ASC1/SPI pads

SIM pads

I2C pads

Supply pads: Other

Combined GPIO/Control pads (LED, PWM, COUNTER, FST_SHDN)

USB pads

GPIO pads

218217216215214213212211210209208

207

206

205204203202201

223224225226227228229230231232233234235236237238239240

67 68 69 70 71 72 73

74 75 76 77 78 79 80

93 94 95 96 97 98 99

100 101 102 103 104 105 106

85 86

89 90

81 82

87 88

91 92

83 84

243

244

241

242

222

221

220

219

252

245

250

251

249

248

247

246

RF antenna pads

Do not use Not connected Reserved

Combined GPIO/ ASC0/SPI pads

ADC pad

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2 Interface Characteristics

ELS81-US is equipped with an SMT application interface that connects to the external application. The SMT application interface incorporates the various application interfaces as well as the RF antenna interface.

2.1 Application Interface

2.1.1 Pad Assignment

The SMT application interface on the ELS81-US provides connecting pads to integrate the module into external applications. Figure 4 shows the connecting pads’ numbering plan, the following Table 1 lists the pads’ assignments.

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Figure 4: Numbering plan for connecting pads (bottom view)

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2.1 Application Interface

Table 1: Pad assignments

Pad no. Signal name Pad no. Signal name Pad no. Signal name

201 Not connected 24 GPIO22 235 USB_DN 202 Not connected 25 GPIO21 236 Not connected 203 GND 26 GPIO23 237 Not connected 204 BATT+

27 I2CDAT 238 GND 205 GND 28 I2CCLK 239 GPIO5/LED 206 ADC1 29 GPIO17/TXD1/MISO 240 GPIO6/PWM2 207 ON 30 GPIO16/RXD1/MOSI 241 GPIO7/PWM1 208 GND 31 GPIO18/RTS1 242 GPIO8/COUNTER 209 V180 32 GPIO19/CTS1/SPI_CS 53 BATT+

210 RXD0 33 EMERG_RST 54 GND 211 CTS0 221 GPIO12 55 GND 212 TXD0 222 GPIO11 56 ANT_DRX 213 GPIO24/RING0 223 GND 57 GND 214 RTS0 224 Not connected 58 GND 215 VDDLP 225 GND 59 ANT_MAIN 216 CCRST 226 Not connected 60 GND 217 CCIN 227 GND 61 GND 218 CCIO 228 Not connected 62 GND 219 GPIO14 229 GPIO4/FST_SHDN 63 GND 220 GPIO13 230 GPIO3/DSR0/SPI_CLK 64 Not connected 20 CCVCC 231 GPIO2/DCD0 65 Not connected 21 CCCLK 232 GPIO1/DTR0 66 Not connected 22 VCORE 233 VUSB 243 Not connected 23 GPIO20 234 USB_DP 244 GPIO15 Centrally located pads 67 Not connected 83 GND 99 GND 68 Not connected 84 GND 100 GND 69 Not connected 85 GND 101 GND 70 Not connected 86 GND 102 GND 71 Not connected 87 Not connected 103 GND 72 Not connected 88 GND 104 Not connected 73 Not connected 89 GND 105 Not connected 74 Do not use 90 GND 106 Not connected 75 Do not use 91 Not connected 245 GND 76 Not connected 92 GND 246 Not connected 77 Not connected 93 GND 247 Not connected 78 Not connected 94 GND 248 Not connected 79 Not connected 95 GND 249 Not connected 80 Not connected 96 GND 250 GND 81 GND 97 GND 251 GND 82 GND 98 GND 252 GND

Signal pads that are not used should not be connected to an external application.

Please note that the reference voltages listed in Table 2 are the values measured directly on the ELS81-US module. They do not apply to the accessories connected.

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2.1 Application Interface

2.1.2 Signal Properties

Table 2: Signal properties

Function Signal name IO Signal form and level Comment

Page 17 of 107

Power supply

BATT+ BATT+

I WCDMA activated:

VImax = 4.5V V

norm = 3.8V

min = 3.0V during Transmit active.

Imax = 900mA during Tx

LTE activated: VImax = 4.5V V

norm = 3.8V

min = 3.0V during Transmit active.

Lines of BATT+ and GND must be connected in parallel for supply purposes because higher peak currents may occur.

Minimum voltage must not fall below 3.0V including drop, ripple, spikes and not rise above 4.5V.

BATT+

and BATT+RF

require an ultra low ESR capacitor: BATT+ BATT+

--> 150µF

If using Multilayer Ceramic Chip Capacitors (MLCC) please take DCbias into account.

Note that minimum ESR value is advised at <70m.

GND Ground Application Ground

External

V180 O Normal operation: supply voltage

VCORE O V

Ignition ON

V180 should be used to

norm = 1.80V ±3%

max = -10mA

supply level shifters at the interfaces or to supply

external application cirSLEEP mode Operation: V

Sleep = 1.80V ±5%

max = -10mA

cuits.

VCORE and V180 may

be used for the power CLmax = 100µF

norm = 1.2V ±2.5%

max = -10mA

CLmax = 100nF

SLEEP mode Operation: V

Sleep = 0.90V...1.2V ±4%

max = -10mA

indication circuit.

Vcore and V180 are

sensitive against back-

powering by other sig-

nals. While switched off

these voltage domains

must have <0.2V.

If unused keep lines

open.

IVIHmax = 5V tolerant

min = 1.3V

max = 0.5V

Slew rate <

1ms

This signal switches the

module on, and is rising

edge sensitive triggered.

Internal pull down value ON ___|~~~~

for this signal is 100k.

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Table 2: Signal properties

Function Signal name IO Signal form and level Comment

Page 18 of 107

Emer-

EMERG_RST I R gency restart

RTC

VDDLP I/O V backup

USB VUSB_IN I V

USB_DN I/O Full and high speed signal characteris-

USB_DP

Serial Interface ASC0

RXD0 O V

CTS0 O

DSR0 O

DCD0 O

RING0 O

TXD0 I V

RTS0 I Pull down resistor active

DTR0 I Pull up resistor active

 1k, CI  1nF

max = VDDLP max

min = 1.35V

max = 0.3V at ~200µA

~~|___|~~ low impulse width > 10ms

norm = 1.8V ±5%

max = -25mA

max = 1.9V

min = 1.0V

typ < 1µA

min = 3V

max = 5.25V

Active and suspend current: I

< 100µA

max

tics according USB 2.0 Specification.

max = 0.25V at I = 1mA

min = 1.55V at I = -1mA

max = 1.85V

max = 0.35V

min = 1.30V

max = 1.85V

max = 0.35V at > 50µA

min = 1.30V at < 240µA

max = 1.85V at < 240µA

max = 0.35V at < -200µA

min = 1.30V at > -50µA

max = 1.85V

This line must be driven low by an open drain or open collector driver connected to GND.

If unused keep line open.

It is recommended to use a serial resistor between VDDLP and a possible capacitor (bigger than 1µF).

If unused keep line open.

All electrical characteristics according to USB Implementers' Forum, USB 2.0 Specification.

If unused keep lines open.

Note that some ASC0 lines are originally available as GPIO lines. If configured as ASC0 lines, the GPIO lines are assigned as follows: GPIO1 --> DTR0 GPIO2 --> DCD0 GPIO3 --> DSR0 GPIO24 --> RING0

The DSR0 line is also shared with the SPI interface‘s SPI_CLK signal.

Note that DCD0/GPIO2 must not be driven low during startup

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Table 2: Signal properties

Function Signal name IO Signal form and level Comment

Page 19 of 107

Serial Interface ASC1

SIM card detection

3V SIM Card Interface

RXD1 O V

TXD1 I

RTS1 I

CTS1 O

CCIN I R

CCRST O V

CCIO I/O V

max = 0.25V at I = 1mA

min = 1.55V at I = -1mA

max = 1.85V

max = 0.35V

min = 1.30V

max = 1.85V

 110k

min = 1.45V at I = 15µA,

max= 1.9V

max = 0.3V

max = 0.30V at I = 1mA

min = 2.45V at I = -1mA

max = 2.90V

max = 0.50V

min = 2.05V

max = 2.90V

If unused keep line open.

Note that the ASC1 interface lines are originally available as GPIO lines. If configured as ASC1 lines, the GPIO lines are assigned as follows: GPIO16 --> RXD1 GPIO17 --> TXD1 GPIO18 --> RTS1 GPIO19 --> CTS1

CCIN = High, SIM card inserted.

For details please refer to

Section 2.1.6.

If unused keep line open.

Maximum cable length or copper track to SIM card holder should not exceed 100mm.

CCCLK O V

CCVCC O V

max = 0.25V at I = 1mA

min = 2.50V at I = -1mA

max = 2.90V

max = 0.25V at I = 1mA

min = 2.40V at I = -1mA

max = 2.90V

min= 2.70V

typ = 2.90V

max = 3.30V

max = -30mA

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Table 2: Signal properties

Function Signal name IO Signal form and level Comment

Page 20 of 107

1.8V SIM Card Interface

C I2CCLK IO Open drain IO

CCRST O V

CCIO I/O V

CCCLK O V

CCVCC O V

I2CDAT IO

max = 0.25V at I = 1mA

min = 1.45V at I = -1mA

max = 1.90V

max = 0.35V

min = 1.25V

max = 1.85V

max = 0.25V at I = 1mA

min = 1.50V at I = -1mA

max = 1.85V

max = 0.25V at I = 1mA

min = 1.50V at I = -1mA

max = 1.85V

min = 1.75V

typ = 1.80V

max = 1.85V

max = -30mA

min = 0.35V at Imax = 4mA (Imax

= Imax external + I pull-up) V

max = 1.85V

R external pull up min = 560

max = 0.35V

min = 1.3V

max = 1.85V

Maximum cable length or copper track to SIM card holder should not exceed 100mm.

According to the I

C Bus Specification Version 2.1 for the fast mode a rise time of max. 300ns is permitted. There is also a maximum V

=0.4V at

3mA specified.

The value of the pull-up depends on the capacitive load of the whole sys-

tem (I

C Slave + lines). The maximum sink current of I2CDAT and I2CCLK is 4mA.

C interface of the module already has internal 1KOhm pull up resistor to V180 inside the module. Please take this into consideration during application design.

If lines are unused keep lines open.

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Table 2: Signal properties

Function Signal name IO Signal form and level Comment

Page 21 of 107

SPI SPI_CLK O

MOSI O

MISO I

SPI_CS O

GPIO interface

GPIO1-GPIO3 IO

GPIO4 IO

GPIO5 IO

GPIO6 IO

GPIO7 IO

GPIO8 IO

GPIO11GPIO15

GPIO16GPIO19

GPIO20GPIO23

VOLmax = 0.25V at I = 1mA VOHmin = 1.55V at I = -1mA VOHmax = 1.85V

VILmax = 0.35V V

min = 1.30V

max = 1.85V

VOLmax = 0.25V at I = 1mA VOHmin = 1.55V at I = -1mA

max = 1.85V

VILmax = 0.35V V

min = 1.30V

max = 1.85V

Imax = ±5mA

If lines are unused keep lines open.

Note that the SPI interface lines are originally available as GPIO lines. If configured as SPI lines, the GPIO lines are assigned as follows: GPIO3 --> SPI_CLK GPIO16 --> MOSI GPIO17 --> MISO GPIO19 --> SPI_CS

If unused keep line open.

Please note that most GPIO lines can be configured by AT command for alternative functions: GPIO1-GPIO3: ASC0 control lines DTR0, DCD0 and DSR0 GPIO4: Fast shutdown GPIO5: Status LED line GPIO6/GPIO7: PWM GPIO8: Pulse Counter GPIO16-GPIO19: ASC1 or SPI GPIO24: ASC0 control line RING0

GPIO24 IO

Fast

FST_SHDN I V

shutdown

Status LED LED O

max = 0.35V

min = 1.30V

max = 1.85V

~~|___|~~ low impulse width > 1ms

VOLmax = 0.25V at I = 1mA VOHmin = 1.55V at I = -1mA VOHmax = 1.85V

This line must be driven low. If unused keep line open.

Note that the fast shutdown line is originally available as GPIO line. If configured as fast shutdown, the GPIO line is assigned as follows: GPIO4 --> FST_SHDN

If unused keep line open.

Note that the LED line is originally available as GPIO line. If configured as LED line, the GPIO line is assigned as follows: GPIO5 --> LED

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Table 2: Signal properties

Function Signal name IO Signal form and level Comment

Page 22 of 107

PWM PWM1 O

PWM2 O

Pulse

COUNTER I Internal up resistor active

counter

ADC

ADC1 I R (Analog-toDigital Converter)

VOLmax = 0.25V at I = 1mA VOHmin = 1.55V at I = -1mA VOHmax = 1.85V

max = 0.35V at < -200µA

min = 1.30V at > -50µA

max = 1.85V

= 1M

= 0V ... 1.2V (valid range)

max = 1.2V

Resolution 1024 steps Tolerance 0.3%

If unused keep lines open.

Note that the PWM lines are originally available as GPIO lines. If configured as PWM lines, the GPIO lines are assigned as follows: GPIO7 --> PWM1 GPIO6 --> PWM2

If unused keep line open.

Note that the COUNTER line is originally available as GPIO line. If configured as COUNTER line, the GPIO line is assigned as follows: GPIO8 --> COUNTER

ADC can be used as input for external measurements.

If unused keep line open.

1. After the operating voltage is applied, it is required to wait at least 1 second to trigger the ON signal.

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2.1 Application Interface

2.1.2.1 Absolute Maximum Ratings

The absolute maximum ratings stated in Table 3 are stress ratings under any conditions. Stresses beyond any of these limits will cause permanent damage to ELS81-US.

Table 3: Absolute maximum ratings

Parameter Min Max Unit

Supply voltage

BATT+

, BATT+

-0.5 +5.5 V

Voltage at all signal lines in Power Down mode -0.3 +0.3 V

Voltage at digital lines in normal operation -0.2 V180 + 0.2 V

Voltage at SIM/USIM interface, CCVCC in normal operation -0.5 +3.3 V

VDDLP input voltage -0.15 2.0 V

Voltage at ADC line in normal operation 0 1.2 V

V180 in normal operation +1.7 +1.9 V

Current at V180 in normal operation -0 +50 mA

VCORE in normal operation +0.85 +1.25 V

Current at VCORE in normal operation -0 +50 mA

Voltage at ON signal -0.5 +6.5 V

Current at single GPIO -5 +5 mA

Current at all GPIO -50 +50 mA

Voltage at VCORE, V180 in power down mode -0.2 +0.2 V

1. Positive noted current means current sourcing from ELS81-US. Negative noted current means current sourcing towards ELS81-US.

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VBUS

DP DN

VREG (3V075)

BATT+

USB_DP

lin. reg.

GND

Module

Detection only

VUSB_IN

USB part

RING0

Host wakeup

All serial (including RS) and pull-up resistors for data lines are implemented.

USB_DN

If the USB interface is operated in High Speed mode (480MHz), it is recommended to take special care routing the data lines USB_DP and USB_DN. Application layout should in this case implement a differential impedance of 90 ohms for proper signal integrity.

SMT

Page 24 of 107

2.1 Application Interface

2.1.3 USB Interface

ELS81-US supports a USB 2.0 High Speed (480Mbit/s) device interface that is Full Speed (12Mbit/s) compliant. The USB interface is primarily intended for use as command and data interface and for downloading firmware.

The external application is responsible for supplying the VUSB_IN line. This line is used for cable detection only. The USB part (driver and transceiver) is supplied by means of BATT+. This is because ELS81-US is designed as a self-powered device compliant with the “Universal Serial Bus Specification Revision 2.0”

Figure 5: USB circuit

To properly connect the module's USB interface to the external application, a USB 2.0 compatible connector and cable or hardware design is required. For more information on the USB related signals see Table 2. Furthermore, the USB modem driver distributed with ELS81-US needs to be installed.

1. The specification is ready for download on http://www.usb.org/developers/docs/

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2.1.3.1 Reducing Power Consumption

While a USB connection is active, the module will never switch into SLEEP mode. Only if the USB interface is in Suspended state or Detached (i.e., VUSB_IN = 0) is the module able to switch into SLEEP mode thereby saving power. There are two possibilities to enable power reduction mechanisms:

• Recommended implementation of USB Suspend/Resume/Remote Wakeup:

The USB host should be able to bring its USB interface into the Suspended state as described in the “Universal Serial Bus Specification Revision 2.0“ work, the VUSB_IN line should always be kept enabled. On incoming calls and other events ELS81-US will then generate a Remote Wakeup request to resume the USB host controller.

See also [5] (USB Specification Revision 2.0, Section 10.2.7, p.282): "If USB System wishes to place the bus in the Suspended state, it commands the Host Controller to stop all bus traffic, including SOFs. This causes all USB devices to enter the Suspended state. In this state, the USB System may enable the Host Controller to respond to bus wakeup events. This allows the Host Controller to respond to bus wakeup signaling to restart the host system."

. For this functionality to

• Implementation for legacy USB applications not supporting USB Suspend/Resume:

As an alternative to the regular USB suspend and resume mechanism it is possible to employ the RING0 line to wake up the host application in case of incoming calls or events signalized by URCs while the USB interface is in Detached state (i.e., VUSB_IN = 0). Every wakeup event will force a new USB enumeration. Therefore, the external application has to carefully consider the enumeration timings to avoid loosing any signalled events. For details on this host wakeup functionality see Section 2.1.13.3. To prevent existing data call connections from being disconnected while the USB interface is in detached state (i.e., VUSB_IN=0) it is possible to call AT&D0, thus ignoring the status of the DTR line (see also [1]).

1. The specification is ready for download on http://www.usb.org/developers/docs/

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2.1.4 Serial Interface ASC0

ELS81-US offers an 8-wire unbalanced, asynchronous modem interface ASC0 conforming to ITU-T V.24 protocol DCE signalling. The electrical characteristics do not comply with ITU-T V.28. The significant levels are 0V (for low data bit or active state) and 1.8V (for high data bit or inactive state). For electrical characteristics please refer to Table 2. For an illustration of the interface line’s startup behavior see Figure 7.

ELS81-US is designed for use as a DCE. Based on the conventions for DCE-DTE connections it communicates with the customer application (DTE) using the following signals:

• Port TXD @ application sends data to the module’s TXD0 signal line

• Port RXD @ application receives data from the module’s RXD0 signal line

Figure 6: Serial interface ASC0

Features:

• Includes the data lines TXD0 and RXD0, the status lines RTS0 and CTS0 and, in addition, the modem control lines DTR0, DSR0, DCD0 and RING0.

• The RING0 signal serves to indicate incoming calls and other types of URCs (Unsolicited Result Code). It can also be used to send pulses to the host application, for example to wake up the application from power saving state.

• Configured for 8 data bits, no parity and 1 stop bit.

• ASC0 can be operated at fixed bit rates from 1,200bps up to 921,600bps.

• Autobauding supports bit rates from 1,200bps up to 230,400bps.

• Supports RTS0/CTS0 hardware flow control. The hardware hand shake line RTS0 has an internal pull down resistor causing a low level signal, if the line is not used and open. Although hardware flow control is recommended, this allows communication by using only RXD and TXD lines.

• Wake up from SLEEP mode by RTS0 activation (high to low transition; see Section 3.3.2).

Note: The ASC0 modem control lines DTR0, DCD0, DSR0 and RING0 are originally available as GPIO lines. If configured as ASC0 lines, these GPIO lines are assigned as follows: GPIO1 --> DTR0, GPIO2 --> DCD0, GPIO3 --> DSR0 and GPIO24 --> RING0. Also, DSR0 is shared with the SPI_CLK line of the SPI interface and may be configured as such. Configuration is done by AT command (see [1]). The configuration is non-volatile and becomes active after a module restart.

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TXD0

RXD0

RTS0

CTS0

DTR0/GPIO1

DSR0/GPIO3

DCD0/GPIO2

RING0/GPIO24

EMERG_RST

Power supply active

Start up

Firmware

initialization

Command interface

initialization

Interface

active

Reset

state

V180

VCORE

Page 27 of 107

2.1 Application Interface

The following figure shows the startup behavior of the asynchronous serial interface ASC0.

For pull-up and pull-down values see Table 10.

Figure 7: ASC0 startup behavior

Notes: During startup the DTR0 signal is driven active low for 500µs. It is recommended to provide a 470

 serial resistor for the DTR0 line to prevent shorts (high current flow).

No data must be sent over the ASC0 interface before the interface is active and ready to receive data (see Section 3.2.1).

An external pull down to ground on the DCD0 line during the startup phase activates a special mode for ELS81-US. In this special mode the AT command interface is not available and the module may therefore no longer behave as expected.

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2.1.5 Serial Interface ASC1

Four ELS81-US GPIO lines can be configured as ASC1 interface signals to provide a 4-wire unbalanced, asynchronous modem interface ASC1 conforming to ITU-T V.24 protocol DCE signalling. The electrical characteristics do not comply with ITU-T V.28. The significant levels are 0V (for low data bit or active state) and 1.8V (for high data bit or inactive state). For electrical characteristics please refer to Table 2. For an illustration of the interface line’s startup behavior see Figure 9.

The ASC1 interface lines are originally available as GPIO lines. If configured as ASC1 lines, the GPIO lines are assigned as follows: GPIO16 --> RXD1, GPIO17 --> TXD1, GPIO18 --> RTS1 and GPIO19 --> CTS1. Configuration is done by AT command (see [1]: AT^SCFG). The configuration is non-volatile and becomes active after a module restart.

ELS81-US is designed for use as a DCE. Based on the conventions for DCE-DTE connections it communicates with the customer application (DTE) using the following signals:

• Port TXD @ application sends data to module’s TXD1 signal line

• Port RXD @ application receives data from the module’s RXD1 signal line

Figure 8: Serial interface ASC1

Features

• Includes only the data lines TXD1 and RXD1 plus RTS1 and CTS1 for hardware handshake.

• On ASC1 no RING line is available.

• Configured for 8 data bits, no parity and 1 or 2 stop bits.

• ASC1 can be operated at fixed bit rates from 1,200 bps to 921,600 bps.

• Autobauding supports bit rates from 1,200bps up to 230,400bps.

• Supports RTS1/CTS1 hardware flow. The hardware hand shake line RTS0 has an internal pull down resistor causing a low level signal, if the line is not used and open. Although hardware flow control is recommended, this allows communication by using only RXD and TXD lines.

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TXD1/GPIO17

RXD1/GPIO16

RTS1/GPIO18

CTS1/GPIO19

EMERG_RST

Power supply active

Start up

Firmware

initialization

Command interface

initialization

Interface

active

Reset

state

V180

VCORE

2.1 Application Interface

Page 29 of 107

The following figure shows the startup behavior of the asynchronous serial interface ASC1.

*) For pull-down values see Table 10.

Figure 9: ASC1 startup behavior

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2.1.6 UICC/SIM/USIM Interface

ELS81-US has an integrated UICC/SIM/USIM interface compatible with the 3GPP 31.102 and ETSI 102 221. This is wired to the host interface in order to be connected to an external SIM card holder. Five pads on the SMT application interface are reserved for the SIM interface.

The UICC/SIM/USIM interface supports 3V and 1.8V SIM cards. Please refer to Table 2 for electrical specifications of the UICC/SIM/USIM interface lines depending on whether a 3V or

1.8V SIM card is used.

The CCIN signal serves to detect whether a tray (with SIM card) is present in the card holder. To take advantage of this feature, an appropriate SIM card detect switch is required on the card holder. For example, this is true for the model supplied by Molex, which has been tested to operate with ELS81-US and is part of the Gemalto M2M reference equipment submitted for type approval. See Section 7.1 for Molex ordering numbers.

Table 4: Signals of the SIM interface (SMT application interface)

Signal Description

GND Separate ground connection for SIM card to improve EMC.

CCCLK Chipcard clock

CCVCC SIM supply voltage.

CCIO Serial data line, input and output.

CCRST Chipcard reset

CCIN Input on the baseband processor for detecting a SIM card tray in the holder. If the SIM is

removed during operation the SIM interface is shut down immediately to prevent destruction of the SIM. The CCIN signal is by default low and will change to high level if a SIM card is inserted. The CCIN signal is mandatory for applications that allow the user to remove the SIM card during operation. The CCIN signal is solely intended for use with a SIM card. It must not be used for any other purposes. Failure to comply with this requirement may invalidate the type approval of ELS81-US.

Note [1]: No guarantee can be given, nor any liability accepted, if loss of data is encountered after removing

the SIM card during operation. Also, no guarantee can be given for properly initializing any SIM card that the user inserts after having removed the SIM card during operation. In this case, the application must restart ELS81-US.

Note [2]: On the evaluation board, the CCIN signal is inverted, thus the CCIN signal is by default high and

will change to a low level if a SIM card is inserted.

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SIM

CCVCC

CCRST

CCIO

CCCLK

220nF

1nF

CCIN

V180

2.1 Application Interface

The figure below shows a circuit to connect an external SIM card holder.

Page 31 of 107

Figure 10: External UICC/SIM/USIM card holder circuit

The total cable length between the SMT application interface pads on ELS81-US and the pads of the external SIM card holder must not exceed 100mm in order to meet the specifications of 3GPP TS 51.010-1 and to satisfy the requirements of EMC compliance.

To avoid possible cross-talk from the CCCLK signal to the CCIO signal be careful that both lines are not placed closely next to each other. A useful approach is using a GND line to shield the CCIO line from the CCCLK line.

An example for an optimized ESD protection for the SIM interface is shown in Section 2.1.6.1.

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CCRST

CCCLK

CCIO

CCVCC

CCIN

GND

123

654

SIM_RST

SIM_CLK

SIM_IO

SIM_VCC

SIM_DET

Module

2.1 Application Interface

2.1.6.1 Enhanced ESD Protection for SIM Interface

Page 32 of 107

To optimize ESD protection for the SIM interface it is possible to add ESD diodes to the SIM interface lines as shown in the example given in Figure 11.

The example was designed to meet ESD protection according ETSI EN 301 489-1/7: Contact discharge: ± 4kV, air discharge: ± 8kV.

Figure 11: SIM interface - enhanced ESD protection

1. Note that the protection diode shall have low internal capacitance less than 5pF for IO and CLK.

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Capacitor

VDDLP

Processor and power

management

LRTC

RTC

Application interface

BATT+

Module

GND

2.1 Application Interface

Page 33 of 107

2.1.7 RTC Backup

The internal Real Time Clock of ELS81-US is supplied from a separate voltage regulator in the power supply component which is also active when ELS81-US is in Power Down mode and BATT+ is available. An alarm function is provided that allows to wake up ELS81-US without logging on to the RF network.

In addition, you can use the VDDLP pad to backup the RTC from an external capacitor. The capacitor is charged from the internal LDO of ELS81-US. If the voltage supply at BATT+ is disconnected the RTC can be powered by the capacitor. The size of the capacitor determines the duration of buffering when no voltage is applied to ELS81-US, i.e. the greater the capacitor the longer ELS81-US will save the date and time. The RTC can also be supplied from an external battery (rechargeable or non-chargeable). In this case the electrical specification of the VDDLP pad (see Section 2.1.2) has to be taken in to account.

Figure 12 shows an RTC backup configuration. A serial 1k

 resistor has to be placed on the

application next to VDDLP. It limits the input current of an empty capacitor or battery.

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Figure 12: RTC supply variants

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2.1 Application Interface

2.1.8 GPIO Interface

ELS81-US offers a GPIO interface with 22 GPIO lines. The GPIO lines are shared with other interfaces or functions: Fast shutdown (see Section 2.1.13.4), status LED (see Section

2.1.13.1), the PWM functionality (see Section 2.1.11), an pulse counter (see Section 2.1.12),

ASC0 (see Section 2.1.4), ASC1 (see Section 2.1.5), an SPI interface (see Section 2.1.10).

The following table shows the configuration variants for the GPIO pads. All variants are mutually exclusive, i.e. a pad configured for instance as Status LED is locked for alternative usage.

Table 5: GPIO lines and possible alternative assignment

GPIO Fast

Shutdown

GPIO1 DTR0

GPIO2 DCD0

GPIO3 DSR0 SPI_CLK

GPIO4 FST_SHDN

GPIO5 Status LED

GPIO6 PWM2

GPIO7 PWM1

GPIO8 COUNTER

GPIO11

GPIO12

GPIO13

GPIO14

GPIO15

GPIO16 RXD1 MOSI

GPIO17 TXD1 MISO

GPIO18 RTS1

Status LED PWM Pulse

Counter

ASC0 ASC1 SPI

GPIO19 CTS1 SPI_CS

GPIO20

GPIO21

GPIO22

GPIO23

GPIO24 RING0

After startup, the above mentioned alternative GPIO line assignments can be configured using AT commands (see [1]). The configuration is non-volatile and available after module restart.

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GPIO 1-8

CTS0

EMERG_RST

Power supply active

Start up

Firmware

initialization

Command interface

initialization

Interface

active

Reset

state

V180

VCORE

GPIO 11 - 24

2.1 Application Interface

Page 35 of 107

The following figure shows the startup behavior of the GPIO interface. With an active state of the ASC0 interface (i.e. CTS0 is at low level) the initialization of the GPIO interface lines is also finished.

*) For pull down values see Table 10.

Figure 13: GPIO startup behavior

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I2CCLK

I2CDAT

GND

I2CCLK

I2CDAT

GND

Module Application

V180

R pull up

1KOhm

Page 36 of 107

2.1 Application Interface

2.1.9 I2C Interface

I2C is a serial, 8-bit oriented data transfer bus for bit rates up to 400kbps in Fast mode. It consists of two lines, the serial data line I2CDAT and the serial clock line I2CCLK. The module acts as a single master device, e.g. the clock I2CCLK is driven by the module. I2CDAT is a bi-directional line. Each device connected to the bus is software addressable by a unique 7-bit address, and simple master/slave relationships exist at all times. The module operates as mastertransmitter or as master-receiver. The customer application transmits or receives data only on request of the module.

To configure and activate the I2C bus use the AT^SSPI command. Detailed information on the AT^SSPI command as well explanations on the protocol and syntax required for data transmission can be found in [1].

The I

C interface can be powered via the V180 line of ELS81-US. If connected to the V180 line,

the I

C interface will properly shut down when the module enters the Power Down mode.

In the application I2CDAT and I2CCLK lines need to be connected to a positive supply voltage via a pull-up resistor. For electrical characteristics please refer to Table 2.

Figure 14: I

Note: Good care should be taken when creating the PCB layout of the host application: The traces of I2CCLK and I2CDAT should be equal in length and as short as possible.

C interface connected to V180

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I2CCLK

I2CDAT

Open Drain

(external pull up)

CTSx

EMERG_RST

Power supply active

Start up

Firmware

initialization

Command interface

initialization

Interface

active

Reset

state

V180

VCORE

2.1 Application Interface

Page 37 of 107

The following figure shows the startup behavior of the I2C interface. With an active state of the ASC0 interface (i.e. CTS0 is at low level) the initialization of the I

C interface is also finished.

Figure 15: I

C startup behavior

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SPI MODE 0 SPI MODE 1

SPI MODE 2 SPI MODE 3

Clock phase

Clock polarity

SPI_CS

MOSI

SPI_CLK

MISO

SPI_CS

MOSI

SPI_CLK

MISO

SPI_CS

MOSI

SPI_CLK

MISO

SPI_CS

MOSI

SPI_CLK

MISO

Sample Sample

Page 38 of 107

2.1 Application Interface

2.1.10 SPI Interface

Four ELS81-US GPIO interface lines can be configured as Serial Peripheral Interface (SPI). The SPI is a synchronous serial interface for control and data transfer between ELS81-US and the external application. Only one application can be connected to the SPI and the interface supports only master mode. The transmission rates are up to 6.5Mbit/s. The SPI interface comprises the two data lines MOSI and MISO, the clock line SPI_CLK a well as the chip select line SPI_CS.

The four GPIO lines can be configured as SPI interface signals as follows: GPIO3 --> SPI_CLK, GPIO16 --> MOSI, GPIO17 --> MISO and GPIO19 --> SPI_CS. The configuration is done by AT command (see [1]). It is non-volatile and becomes active after a module restart.

The GPIO lines are also shared with the ASC1 signal lines and the ASC0 modem status signal line DSR0.

To configure and activate the SPI interface use the AT^SSPI command. Detailed information on the AT^SSPI command as well explanations on the SPI modes required for data transmission can be found in [1].

In general, SPI supports four operation modes. The modes are different in clock phase and clock polarity. The module’s SPI mode can be configured by using the AT command AT^SSPI. Make sure the module and the connected slave device works with the same SPI mode.

Figure 16 shows the characteristics of the four SPI modes. The SPI modes 0 and 3 are the most

common used modes. For electrical characteristics please refer to Table 2.

Figure 16: Characteristics of SPI modes

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VCC

GPIO5/

LED

GNDGND

2.1 Application Interface

Page 39 of 107

2.1.11 PWM Interfaces

The GPIO6 and GPIO7 interface lines can be configured as Pulse Width Modulation interface lines PWM1 and PWM2. The PWM interface lines can be used, for example, to connect buzzers. The PWM1 line is shared with GPIO7 and the PWM2 line is shared with GPIO6 (for GPIOs see Section 2.1.8). GPIO and PWM functionality are mutually exclusive.

The startup behavior of the lines is shown in Figure 13.

2.1.12 Pulse Counter

The GPIO8 line can be configured as pulse counter line COUNTER. The pulse counter interface can be used, for example, as a clock (for GPIOs see Section 2.1.8).

2.1.13 Control Signals

2.1.13.1 Status LED

The GPIO5 interface line can be configured to drive a status LED that indicates different operating modes of the module (for GPIOs see Section 2.1.8). GPIO and LED functionality are mu- tually exclusive.

To take advantage of this function connect an LED to the GPIO5/LED line as shown in Figure

17.

Figure 17: Status signaling with LED driver

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22k

10k

100k

4.7k

V180

VCORE

Power

indication

External

power supply

2.1 Application Interface

Page 40 of 107

2.1.13.2 Power Indication Circuit

In Power Down mode the maximum voltage at any digital or analog interface line must not exceed +0.3V (see also Section 2.1.2.1). Exceeding this limit for any length of time might cause permanent damage to the module.

It is therefore recommended to implement a power indication signal that reports the module’s power state and shows whether it is active or in Power Down mode. While the module is in Power Down mode all signals with a high level from an external application need to be set to low state or high impedance state. The sample power indication circuit illustrated in Figure 18 denotes the module’s active state with a low signal and the module’s Power Down mode with a high signal or high impedance state.

Figure 18: Power indication circuit

2.1.13.3 Host Wakeup

If no call, data or message transfer is in progress, the host may shut down its own USB interface to save power. If a call or other request (URC’s, messages) arrives, the host can be notified of these events and be woken up again by a state transition of the ASC0 interface‘s RING0 line. This functionality should only be used with legacy USB applications not supporting the recommended USB suspend and resume mechanism as described in [5] (see also Section 2.1.3.1). For more information on how to configure the RING0 line by AT^SCFG command see [1].

Possible RING0 line states are listed in Table 6.

Table 6: Host wakeup lines

Signal I/O Description

RING0 O Inactive to active low transition:

0 = The host shall wake up 1 = No wake up request

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BATT+

VCORE

V180

VDDLP

Fast shut down procedure Power down

EMERG_RST

GPIO4/FST_SHDN

<15ms_

2.1 Application Interface

Page 41 of 107

2.1.13.4 Fast Shutdown

The GPIO4 interface line can be configured as fast shutdown signal line FST_SHDN. The configured FST_SHDN line is an active low control signal and must be applied for at least 1 milliseconds. If unused this line can be left open because of a configured internal pull-up resistor. Before setting the FST_SHDN line to low, the ON signal should be set to low (see Figure 19). Otherwise there might be back powering at the ON line in Power Down mode.

The fast shutdown feature can be triggered using the AT command AT^SMSO=<fso>. For details see [1].

If triggered, a low impulse >1 milliseconds on the FST_SHDN line starts the fast shutdown. The fast shutdown procedure still finishes any data activities on the module's flash file system, thus ensuring data integrity, but will no longer deregister gracefully from the network, thus saving the time required for network deregistration.

Please note that the normal software controlled shutdown using AT^SMSO will allow option for a fast shutdown by parameter <fso>, i.e., without network deregistration. However, in this case no URCs including shutdown URCs will be provided by the AT^SMSO command.

Please also note that the fast shutdown operation does not allow the module deregister from the network, therefore, this practice is not recommended, and should not be conducted on regular basis. If it is used for energy saving reason, for instance, used in battery-driven solutions that require prompt system shutdown before battery depletion, discretion is advised in such case.

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Figure 19: Fast shutdown timing

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2.2 RF Antenna Interface

Page 42 of 107

The ELS81-US UMTS/LTE antenna interface comprises a UMTS/LTE main antenna as well as a UMTS/LTE Rx diversity antenna to improve signal reliability and quality has an impedance of 50

. ELS81-US is capable of sustaining a total mismatch at the antenna

. The RF interface

line without any damage, even when transmitting at maximum RF power.

The external antenna must be matched properly to achieve best performance regarding radiated power, modulation accuracy and harmonic suppression. Antenna matching networks are not included on the ELS81-US module and should be placed in the host application if the antenna does not have an impedance of 50

.

Regarding the return loss ELS81-US provides the following values in the active band:

Table 7: Return loss in the active band

State of module Return loss of module Recommended return loss of application

Receive >

Transmit not applicable >

8dB > 12dB

12dB

2.2.1 Antenna Interface Specifications

For approval reasons it is mandatory to connect/apply the Rx diversity antenna to an existing antenna. Not connecting/applying the Rx diversity antenna does not necessarily impact the performance, but may result in approval failures. The minimum antenna efficiency should be better than 50%.

Table 8: RF Antenna interface UMTS/LTE (at operating temperature range

Parameter Conditions Min. Typical Max. Unit

LTE connectivity

Receiver Input Sensitivity @ ARP (Dual Antenna; ch. bandwidth 5MHz)

Band 2, 4, 5,12

LTE 700 Band 12 (ch. bandwidth 5MHz)

LTE 850 Band 5 (ch. bandwidth 10MHz)

LTE AWS Band 4 (ch. bandwidth 10MHz)

LTE 1900 Band 2 (ch. bandwidth 10MHz)

)

-97 -103.5 dBm

-98 -104.5 dBm

-100 -103 dBm

-98 -102.5 dBm

1. By delivery default the UMTS/LTE Rx diversity antenna is configured as available for the module since its usage is mandatory for LTE. Please refer to [1] for details on how to configure antenna settings.

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2.2 RF Antenna Interface

Page 43 of 107

Table 8: RF Antenna interface UMTS/LTE (at operating temperature range

)

Parameter Conditions Min. Typical Max. Unit

RF Power @ ARP with 50 Load (Board temperature < 85°C, BW:5MHz RB:25 (DL), 1 (UL) QPSK)

LTE 700 Band 12 (ch. bandwidth 5MHz; 1RB, position low)

LTE 850 Band 5 (ch. bandwidth 5MHz; 1RB, position

+21 +23 dBm

low)

LTE AWS Band 4 (ch. band-

+21 +23 dBm width 5MHz; 1RB, position low)

LTE 1900 Band 2 (ch. band-

+21 +23 dBm width 5MHz; 1RB, position low)

UMTS/HSPA connectivity

Receiver Input Sensitivity @ ARP

Band II, IV, V

UMTS 850 Band V -104.7 -110 dBm

UMTS AWS Band IV -106.7 -108.5 dBm

UMTS 1900 Band II -104.7 -110 dBm

RF Power @ ARP with 50 Load (Board temperature < 85°C)

UMTS 850 Band V +21 +23.5 dBm

UMTS AWS Band IV +21 +23.5 dBm

UMTS 1900 Band II +21 +23.5 dBm

1. No active power reduction is implemented - any deviations are hardware related.

2. Applies also to UMTS/LTE Rx diversity antenna.

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218217216215214213212211210209208

207

206

205204203202201

223224225226227228229230231232233234235236237238239240

67 68 69 70 71 72 73

74 75 76 77 78 79 80

93 94 95 96 97 98 99

100 101 102 103 104 105 106

85 86

89 90

81 82

87 88

91 92

83 84

243

244

241

242

222

221

220

219

252

245

250

251

249

248

247

246

236237

GND

ANT_MAIN

GND

ANT_DRX

Page 44 of 107

2.2 RF Antenna Interface

2.2.2 Antenna Installation

The antenna is connected by soldering the antenna pad (ANT_MAIN or ANT_DRX) and its neighboring ground pads (GND) directly to the application’s PCB. The antenna pads are the antenna reference points (ARP) for ELS81-US. All RF data specified throughout this document is related to the ARP.

Figure 20: Antenna pads (bottom view)

The distance between the antenna pad and its neighboring GND pads has been optimized for best possible impedance. To prevent mismatch, special attention should be paid to these pads on the application‘s PCB.

The wiring of the antenna connection, starting from the antenna pad to the application‘s antenna should result in a 50 be optimized with regard to the PCB’s layer stack. Some examples are given in Section 2.2.3.

 line impedance. Line width and distance to the GND plane needs to

To prevent receiver desensitization due to interferences generated by fast transients like high speed clocks on the external application PCB, it is recommended to realize the antenna connection line using embedded Stripline rather than Micro-Stripline technology. Please see Sec-

tion 2.2.3.1 for examples of how to design the antenna connection in order to achieve the

required 50

For type approval purposes, the use of a 50

 line impedance.

be necessary. In this case the U.FL-R-SMT connector should be placed as close as possible to ELS81-US‘s antenna pad.

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 coaxial antenna connector (U.FL-R-SMT) might

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2.2 RF Antenna Interface

Page 45 of 107

2.2.3 RF Line Routing Design

2.2.3.1 Line Arrangement Examples

Several dedicated tools are available to calculate line arrangements for specific applications and PCB materials - for example from http://www.polarinstruments.com/ (commercial software) or from http://web.awrcorp.com/Usa/Products/Optional-Products/TX-Line/ (free software).

Embedded Stripline

This figure below shows a line arrangement example for embedded stripline with 65µm FR4 prepreg (type: 1080) and 710µm FR4 core (4-layer PCB).

Figure 21: Embedded Stripline with 65µm prepreg (1080) and 710µm core

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Antenna line

Ground line

Application board

2.2 RF Antenna Interface

Page 46 of 107

Micro-Stripline

This section gives two line arrangement examples for micro-stripline.

• Micro-Stripline on 1.0mm Standard FR4 2-Layer PCB The following two figures show examples with different values for D1 (ground strip separation).

Figure 22: Micro-Stripline on 1.0mm standard FR4 2-layer PCB - example 1

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Antenna line

Ground line

Application board

2.2 RF Antenna Interface

Page 47 of 107

Figure 23: Micro-Stripline on 1.0mm Standard FR4 PCB - example 2

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Antenna line

Ground line

Application board

2.2 RF Antenna Interface

Page 48 of 107

• Micro-Stripline on 1.5mm Standard FR4 2-Layer PCB The following two figures show examples with different values for D1 (ground strip separation).

Figure 24: Micro-Stripline on 1.5mm Standard FR4 PCB - example 1

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Antenna line

Ground line

Application board

2.2 RF Antenna Interface

Page 49 of 107

Figure 25: Micro-Stripline on 1.5mm Standard FR4 PCB - example 2

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2.2 RF Antenna Interface

Page 50 of 107

2.2.3.2 Routing Example

Interface to RF Connector

Figure 26 shows the connection of the module‘s antenna pad with an application PCB‘s coaxial

antenna connector. Please note that the ELS81-US bottom plane appears mirrored, since it is viewed from ELS81-US top side. By definition the top of customer's board shall mate with the bottom of the ELS81-US module.

Figure 26: Routing to application‘s RF connector - top view

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2.3 Sample Application

Page 51 of 107

2.3 Sample Application

Figure 27 shows a typical example of how to integrate a ELS81-US module with an application.

Usage of the various host interfaces depends on the desired features of the application.

Because of the very low power consumption design, current flowing from any other source into the module circuit must be avoided, for example reverse current from high state external control lines. Therefore, the controlling application must be designed to prevent reverse current flow. Otherwise there is the risk of undefined states of the module during startup and shutdown or even of damaging the module.

Because of the high RF field density inside the module, it cannot be guaranteed that no self interference might occur, depending on frequency and the applications grounding concept. The potential interferers may be minimized by placing small capacitors (47pF) at suspected lines (e.g. RXD0, VDDLP, and ON).

While developing SMT applications it is strongly recommended to provide test points for certain signals, i.e., lines to and from the module - for debug and/or test purposes. The SMT application should allow for an easy access to these signals. For details on how to implement test points see [3].

The EMC measures are best practice recommendations. In fact, an adequate EMC strategy for an individual application is very much determined by the overall layout and, especially, the position of components.

Depending on the micro controller used by an external application ELS81-US‘s digital input and output lines may require level conversion. Section 2.3.1 shows a possible sample level conversion circuit.

Note: ELS81-US is not intended for use with cables longer than 3m.

Disclaimer No warranty, either stated or implied, is provided on the sample schematic diagram shown in

Figure 27 and the information detailed in this section. As functionality and compliance with na-

tional regulations depend to a great amount on the used electronic components and the individual application layout manufacturers are required to ensure adequate design and operating safeguards for their products using ELS81-US modules.

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VCORE

V180

ASC0 (including GPIO1...GPIO3 for DSR0, DTR0, DCD0 and GPIO24 for RING0)/ SPI_CLK (f or DSR0)

GPIO16...GPIO19/

ASC1/

SPI

CCVCC

CCIO

CCCLK

CCIN

CCRST

SIM

V180

220nF

1nF

I2 CCLK

I2CDAT

2.2k***

V180

GPIO4 (FST_SHDN)

GPIO5 (Status LED)

GPIO6 (PWM) GPIO7 (PWM)

GPIO8 (COUNTER )

GPIO11...GPIO15

LED

GND

ANT_MAIN

BATT+

Main antenna

ELS6x

All SIM components should be close to card holder. Keep SIM wires low capacitive.

*10pF

* add optional 10pF for SIM protection against RF (internal Antenna)

150µF,

Low ESR!

33pF

Blocking**

PWR_IND

BATT+

204

GPIO20...GPIO23

Blocking**

100k

4.7k

100k

22k

2.2k***

USB

150µF,

Low ESR!

33pF

GND

ANT_DRX

Diversity antenna

EMERG_RST

RESET

VDDLP

100k

VDDL P

BEAD*

BEAD*: It is recommended to add the BEAD as shown to the BATT+

line. The purpose of this is to mitigate noise from baseband power supply.

Note 1: BLM15PD121SN1D MURATA Ind Chip Bead (120Ohm 25% 100MHz Ferrite

1.3A) is recommended in this case. For details please visit www.murata.com.

Note 2: The Bead should be placed as close as possible to the module.

*** I

C interface of the module already has internal 1KOhm pull up resistor to V180 inside the module. Please take this into consideration during application design.

Blocking** = For more details see Section 3.7

For switch on circuit see Section 3.2.1

2.3 Sample Application

Page 52 of 107

Power suppl

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Figure 27: Schematic diagram of ELS81-US sample application

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5V tolerarant

Low level input

VCC

5V tolerant

VCC

E.g., 74VHC1GT50

E.g.,

NC7WZ16

74LVC2G34

External application

Micro controller

VLOGIC

(3.0V...3.6V)

Input lines,

e.g., µRXD, µCTS

Output lines,

e.g., µTXD, µRTS

V180 (1.8V)

Digital output lines, e.g., RXDx, CTSx

Wireless module

Digital input lines, e.g., TXDx, RTSx

Page 53 of 107

2.3 Sample Application

2.3.1 Sample Level Conversion Circuit

Depending on the micro controller used by an external application ELS81-US‘s digital input and output lines (i.e., ASC0, ASC1 and GPIO lines) may require level conversion. The following Fig-

ure 28 shows a sample circuit with recommended level shifters for an external application‘s mi-

cro controller (with VLOGIC between 3.0V...3.6V). The level shifters can be used for digital input and output lines with V

max=1.85V or VIHmax =1.85V.

Figure 28: Sample level conversion circuit

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3 Operating Characteristics

Page 54 of 107

3 Operating Characteristics

3.1 Operating Modes

The table below briefly summarizes the various operating modes referred to throughout the document.

Table 9: Overview of operating modes

Mode Function

Normal operation

Power Down

Airplane mode

Alarm mode

UMTS / HSPA / LTE SLEEP

UMTS / HSPA / LTE IDLE

UMTS DATA UMTS data transfer in progress. Power consumption depends on net-

HSPA DATA HSPA data transfer in progress. Power consumption depends on net-

LTE DATA LTE data transfer in progress. Power consumption depends on network

Normal shutdown after sending the power down command. Only a voltage regulator is active for powering the RTC. Software is not active. Interfaces are not accessible. Operating voltage remains applied.

Airplane mode shuts down the radio part of the module, causes the module to log off from the network and disables all AT commands whose execution requires a radio connection. Airplane mode can be controlled by AT command (see [1]).

Restricted operation launched by RTC alert function when the module is in Power Down mode. In Alarm mode, the module remains deregistered from the network. Limited number of AT commands is accessible.

Power saving set automatically when no call is in progress and the USB connection is suspended by host or not present and no active communication via ASC0.

Power saving disabled or an USB connection not suspended, but no call in progress.

work settings (e.g. TPC Pattern) and data transfer rate.

settings (e.g. TPC Pattern) and data transfer rate.

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3.2 Power Up/Power Down Scenarios

Page 55 of 107

3.2 Power Up/Power Down Scenarios

In general, be sure not to turn on ELS81-US while it is beyond the safety limits of voltage and temperature stated in Section 2.1.2.1. ELS81-US immediately switches off after having started and detected these inappropriate conditions. In extreme cases this can cause permanent damage to the module.

3.2.1 Turn on ELS81-US

ELS81-US can be turned on as described in the following sections:

• Connecting the operating voltage BATT+ (see Section 3.2.1.1).

• Hardware driven switch on by ON line: Starts Normal mode (see Section 3.2.1.2).

After startup or restart, the module will send the URC ^SYSSTART that notifies the host application that the first AT command can be sent to the module (see also [1]).

3.2.1.1 Connecting ELS81-US BATT+ Lines

Figure 29 shows sample external application circuits that allow to connect (and also to tempo-

rarily disconnect) the module‘s BATT+ lines from the external application‘s power supply.

Figure 29 illustrates the application of power employing an externally controlled microcontrol-

ler. The voltage supervisory circuit ensures that the power is disconnected and applied again depending on given thresholds.

The transistor T2 mentioned in Figure 29 should have an R imize voltage drops.

Such circuits could be useful to maximize power savings for battery driven applications or to completely switch off and restart the module after a firmware update.

After connecting the BATT+ lines the module can then be (re-)started as described in Section

3.2.1.2 and Section 3.2.2.

value < 50m in order to min-

DS_ON

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3.8V

Module

Place C2-C5 close to module

µcontroller

ENABLE

VBATT

VBATT_IN

100nF

C2 47µF,X5R

C3 47µF,X5R

C4 47µF,X5R

C5 47µF,X5R

C6 47µF,X5R

100k

10k

IRML6401

BC847

3.2 Power Up/Power Down Scenarios

Figure 29: Sample circuit for applying power using an external µC

Page 56 of 107

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VDDLP

Option 1 Option 2

RTC backup

3.2 Power Up/Power Down Scenarios

Page 57 of 107

3.2.1.2 Switch on ELS81-US Using ON Signal

After the operating voltage BATT+ is applied, ELS81-US can be switched on by means of the ON signal.

The ON signal is an edge triggered signal and allows the input voltage level up to 5V. The module starts into normal mode on detecting the rising edge of the ON signal. The rising edge of ON signal must be applied at least 100 milliseconds later than BATT+. See Figure 31.

The following Figure 30 shows recommendations for possible switch-on circuits.

Figure 30: ON circuit options

It is recommended to set a serial 1kOhm resistor between the ON circuit and the external capacitor or battery at the VDDLP power supply (i.e., RTC backup circuit). This serial resistor protection is necessary in case the capacitor or battery has low power (is empty).With Option 2 the typical resistor values are: R1 = 150k and R2 = 3k. But the resistor values depend on the current gain from the employed PNP resistor.

Please note that the ON signal is an edge triggered signal. This implies that a micro-second high pulse on the signal line suffices to almost immediately switch on the module, as shown in

Figure 31. After module startup the ON signal should always be set to low to prevent possible

back powering at this pad.

1. Please take due discretion when designing the filtering circuit, especially ESD, which may cause unintended switch on.

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Cinterion® ELS81-US Hardware Interface Description

BATT+

EMERG_RST

V180

VCORE

VDDLP

Rising edge only starts up the module

>100ms

Voltage Detector*

BATT+

GND

VDDLP

GND

* It is recommended to apply the 3-pin microprocessor reset monitor MAX803SQ293T1G or MAX803SQ293D3T1G manufactured by ON Semiconductor.

Details please refer to www.onsemi.com

VCC RESET

GND

100nF Not Assembled

10KOhm

0Ohm

3.2 Power Up/Power Down Scenarios

Page 58 of 107

Figure 31: ON timing

3.2.1.3 Automatic Power On

If an automatic power on function is required for module application, circuit shown in either

Figure 32 or Figure 33 is recommended.

Figure 32: Automatic ON circuit based on voltage detector - option 1

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Voltage Detector*

BATT+

GND

VDDLP

* It is recommended to apply the ultra-low current voltage detector NCP303LSN28 T1 manufactured by ON Semiconductor .

Details please refer to www.onsemi.com

Input

RESET

Output

GND

10KOhm

0.1μF

GND

5 C

3.2 Power Up/Power Down Scenarios

Figure 33: Automatic ON circuit based on voltage detector - option 2

Page 59 of 107

3.2.2 Restart ELS81-US

After startup ELS81-US can be re-started as described in the following sections:

• Software controlled reset by AT+CFUN command: Starts Normal mode (see Section

3.2.2.1).

• Hardware controlled reset by EMERG_RST line: Starts Normal mode (see Section 3.2.2.2).

3.2.2.1 Restart ELS81-US via AT+CFUN Command

To reset and restart the ELS81-US module use the command AT+CFUN. See [1] for details.

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BATT+

EMERG_RST

VCORE

V180

VDDLP

>10ms

System

started

System

started again

Reset

state

Ignition

3.2 Power Up/Power Down Scenarios

Page 60 of 107

3.2.2.2 Restart ELS81-US Using EMERG_RST

The EMERG_RST signal is internally connected to the main module processor. A low level for more than 10ms sets the processor and with it all the other signal pads to their respective reset state. The reset state is described in Section 3.2.3 as well as in the figures showing the startup behavior of an interface.

After releasing the EMERG-RST line, i.e., with a change of the signal level from low to high, the module restarts. The other signals continue from their reset state as if the module was switched on by the ON signal.

It is recommended to control this EMERG_RST line with an open collector transistor or an open drain field-effect transistor.

Caution: Use the EMERG_RST line only when, due to serious problems, the software is not responding for more than 5 seconds. Pulling the EMERG_RST line causes the loss of all information stored in the volatile memory. Therefore, this procedure is intended only for use in case of emergency, e.g. if ELS81-US does not respond, if reset or shutdown via AT comma nd fails.



Figure 34: Emergency restart timing

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3.2.3 Signal States after Startup

Table 10 lists the states each interface signal passes through during reset phase and the first

firmware initialization. For further firmware startup initializations the values may differ because of different GPIO line configurations.

The reset state is reached with the rising edge of the EMERG_RST signal - either after a normal module startup (see Section 3.2.1.2) or after a reset (see Section 3.2.2.2). After the reset state has been reached the firmware initialization state begins. The firmware initialization is completed as soon as the ASC0 interface lines CTS0, DSR0 and RING0 as well as the ASC1 interface line CTS1 have turned low (see Section 2.1.4 and Section 2.1.5). Now, the module is ready to receive and transmit data.

Table 10: Signal states

Signal name Reset state First start up configuration

CCIO L O / L CCRST L O / L CCCLK L O / L CCIN T / 100k PD I / PD RXD0 T / PU O / H TXD0 T / PD I CTS0 T / PU O / H RTS0 T / PU I / PD GPIO1 T / PD T / PD GPIO2 T / PD T / PD GPIO3 T / PD T / PD GPIO4 T / PD T / PD GPIO5 T / PD T / PD GPIO6 T / PD T / PD GPIO7 T / PD T / PD GPIO8 T / PD T / PD GPIO11-GPIO15 T / PD T / PD GPIO16 T / PD T / PD GPIO17 T / PD T / PD GPIO18 T / PD T / PD GPIO19 T / PD T / PD GPIO20 T / PD T / PD GPIO21 T / PD T / PD GPIO22 T / PD T / PD GPIO23 T / PD T / PD GPIO24 T / PD T / PD I2CCLK T / PU OD / PU I2CDAT T / PU OD / PU

Abbreviations used in above Table 10:

L = Low level H = High level T = Tristate I = Input



O = Output OD = Open Drain PD = Pull down, 200µA at 1.9V PU = Pull up, -240µA at 0V

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3.2.4 Turn off ELS81-US

To switch the module off the following procedures may be used:

•

Software controlled shutdown procedure: Software controlled by sending an AT command

over the serial application interface. See Section 3.2.4.1.

Hardware controlled shutdown procedure: Hardware controlled by disconnecting the mod-

• ule‘s power supply lines BATT+ (see Section 3.2.1.1).

Automatic shutdown (software controlled): See Section 3.2.5

•

- Takes effect if ELS81-US board temperature or voltage levels exceed a critical limit.

3.2.4.1 Switch off ELS81-US Using AT Command

The best and safest approach to powering down ELS81-US is to issue the appropriate AT command. This procedure lets ELS81-US log off from the network and allows the software to enter into a secure state and safe data before disconnecting the power supply. The mode is referred to as Power Down mode. In this mode, only the RTC stays active. After sending the switch off command AT^SMSO, be sure not to enter any further AT commands until the module was restarted.

CAUTION: Be sure not to disconnect the operating voltage V

before V180 pad has gone

BATT+

low. Otherwise you run the risk of losing data, or in some rare cases even to render the module inoperable.

To monitor the V180 line, it is recommended to implement a power indication circuit as described in Section 2.1.13.2.

While ELS81-US is in Power Down mode the application interface is switched off and must not be fed from any other voltage source.

Therefore, your application must be designed to

avoid any current flow into any digital pads of the application interface.

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BATT+

VCORE

V180

VDDLP

AT^SMSO System power down procedure Power down

EMERG_RST

3.2 Power Up/Power Down Scenarios

Page 63 of 107

Figure 35: Switch off behavior

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3.2.5 Automatic Shutdown

Automatic shutdown takes effect if the following event occurs:

• ELS81-US board is exceeding the critical limits of overtemperature or undertemperature (see Section 3.2.5.1)

• Undervoltage or overvoltage is detected (see Section 3.2.5.2 and Section 3.2.5.3)

The automatic shutdown procedure is equivalent to the power-down initiated with an AT command, i.e. ELS81-US logs off from the network and the software enters a secure state avoiding loss of data.

3.2.5.1 Thermal Shutdown

The board temperature is constantly monitored by an internal NTC resistor located on the PCB. The values detected by the NTC resistor are measured directly on the board and therefore, are not fully identical with the ambient temperature.

Each time the board temperature goes out of range or back to normal, ELS81-US instantly displays an alert (if enabled).

• URCs indicating the level "1" or "-1" allow the user to take appropriate precautions, such as protecting the module from exposure to extreme conditions. The presentation of the URCs depends on the settings selected with the AT^SCTM write command (for details see [1]): AT^SCTM=1: Presentation of URCs is always enabled. AT^SCTM=0 (default): Presentation of URCs is enabled during the 2 minute guard period after start-up of ELS81-US. After expiry of the 2 minute guard period, the presentation of URCs will be disabled, i.e. no URCs with alert levels "1" or ''-1" will be generated.

• URCs indicating the level "2" or "-2" are instantly followed by an orderly shutdown. The presentation of these URCs is always enabled, i.e. they will be output even though the factory setting AT^SCTM=0 was never changed.

The maximum temperature ratings are stated in Section 3.5. Refer to Table 11 for the associated URCs.

Table 11: Temperature dependent behavior

Sending temperature alert (2min after ELS81-US start-up, otherwise only if URC presentation enabled)

^SCTM_B: 1 Board close to overtemperature limit.

^SCTM_B: -1 Board close to undertemperature limit.

^SCTM_B: 0 Board back to non-critical temperature range.

Automatic shutdown (URC appears no matter whether or not presentation was enabled)

^SCTM_B: 2 Alert: Board equal or beyond overtemperature limit. ELS81-US switches off.

^SCTM_B: -2 Alert: Board equal or below undertemperature limit. ELS81-US switches off.

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3.2 Power Up/Power Down Scenarios

3.2.5.2 Undervoltage Shutdown

Page 65 of 107

The undervoltage shutdown threshold is the specified minimum supply voltage V

BATT+

given in

Table 2. When the average supply voltage measured by ELS81-US approaches the undervolt-

age shutdown threshold (i.e., 0.05V offset) the module will send the following URC:

^SBC: Undervoltage Warning

The undervoltage warning is sent only once - until the next time the module is close to the undervoltage shutdown threshold.

If the voltage continues to drop below the specified undervoltage shutdown threshold, the module will send the following URC:

^SBC: Undervoltage Shutdown

This alert is sent only once before the module shuts down cleanly without sending any further messages.

This type of URC does not need to be activated by the user. It will be output automatically when fault conditions occur.

Note: For battery powered applications it is strongly recommended to implement a BATT+ connecting circuit as described in Section 3.2.1.1 in order to not only be able save power, but also to restart the module after an undervoltage shutdown where the battery is deeply discharged. Also note that the undervoltage threshold is calculated for max. 400mV voltage drops during transmit burst. Power supply sources for external applications should be designed to tolerate 400mV voltage drops without crossing the lower limit of 3.0 V. For external applications operating at the limit of the allowed tolerance the default undervoltage threshold may be adapted by subtracting an offset. For details see [1]: AT^SCFG= "MEShutdown/sVsup/threshold".

3.2.5.3 Overvoltage Shutdown

The overvoltage shutdown threshold is the specified maximum supply voltage V

Table 2. When the average supply voltage measured by ELS81-US approaches the overvolt-

age shutdown threshold (i.e., 0.05V offset) the module will send the following URC:

^SBC: Overvoltage Warning

The overvoltage warning is sent only once - until the next time the module is close to the overvoltage shutdown threshold.

If the voltage continues to rise above the specified overvoltage shutdown threshold, the module will send the following URC:

^SBC: Overvoltage Shutdown

This alert is sent only once before the module shuts down cleanly without sending any further messages.

This type of URC does not need to be activated by the user. It will be output automatically when fault conditions occur.

Keep in mind that several ELS81-US components are directly linked to BATT+ and, therefore, the supply voltage remains applied at major parts of ELS81-US. Especially the power amplifier linked to BATT+

is very sensitive to high voltage and might even be destroyed.

BATT+

given in

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3.3 Power Saving

Page 66 of 107

3.3 Power Saving

ELS81-US can be configured to control power consumption:

• Using the AT command AT^SPOW it is possible to specify a so-called power saving mode

for the module (<mode> = 2; for details on the command see [1]). The module‘s UART interfaces (ASC0 and ASC1) are then deactivated and will only periodically be activated to be able to listen to network paging messages as described in Section 3.3.1 and Section 3.3.2. See Section 3.3.3 for a description on how to immediately wake up ELS81-US again using RTS0.

Please note that the AT^SPOW setting has no effect on the USB interface. As long as the USB connection is active, the module will not change into its SLEEP state to reduce its functionality to a minimum and thus minimizing its current consumption. To enable switching into SLEEP mode, the USB connection must therefore either not be present at all or the USB host must bring its USB interface into Suspend state. Also, VUSB_IN should always be kept enabled for this functionality. See “Universal Serial Bus Specification Revision 2.0” for a description of the Suspend state.

3.3.1 Power Saving while Attached to WCDMA Networks

The power saving possibilities while attached to a WCDMA network depend on the paging timing cycle of the base station.

During normal WCDMA operation, i.e., the module is connected to a WCDMA network, the duration of a power saving period varies. It may be calculated using the following formula:

DRX value

t = 2

DRX (Discontinuous Reception) in WCDMA networks is a value between 6 and 9, thus resulting in power saving intervals between 0.64 and 5.12 seconds. The DRX value of the base station is assigned by the WCDMA network operator.

In the pauses between listening to paging messages, the module resumes power saving, as shown in Figure 36.

* 10 ms (WCDMA frame duration).

Figure 36: Power saving and paging in WCDMA networks

The varying pauses explain the different potential for power saving. The longer the pause the less power is consumed.

1. The specification is ready for download on http://www.usb.org/developers/docs/

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3.3 Power Saving

Page 67 of 107

Generally, power saving depends on the module’s application scenario and may differ from the above mentioned normal operation. The power saving interval may be shorter than 0.64 seconds or longer than 5.12 seconds.

3.3.2 Power Saving while Attached to LTE Networks

The power saving possibilities while attached to an LTE network depend on the paging timing cycle of the base station.

During normal LTE operation, i.e., the module is connected to an LTE network, the duration of a power saving period varies. It may be calculated using the following formula:

t = DRX Cycle Value * 10 ms

DRX cycle value in LTE networks is any of the four values: 32, 64, 128 and 256, thus resulting in power saving intervals between 0.32 and 2.56 seconds. The DRX cycle value of the base station is assigned by the LTE network operator.

In the pauses between listening to paging messages, the module resumes power saving, as shown in Figure 37.

Figure 37: Power saving and paging in LTE networks

The varying pauses explain the different potential for power saving. The longer the pause the less power is consumed.

Generally, power saving depends on the module’s application scenario and may differ from the above mentioned normal operation. The power saving interval may be shorter than 0.32 seconds or longer than 2.56 seconds.

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RTS0

CTS0

TXD0

RXD0

AT comm and

Reply URC

RTS assertion (falling edge)

Wake up from SLEEP mode

Return to SLEEP mode

RTS back

Page 68 of 107

3.3 Power Saving

3.3.3 Wake-up via RTS0

RTS0 can be used to wake up ELS81-US from SLEEP mode configured with AT^SPOW. Assertion of RTS0 (i.e., toggle from inactive high to active low) serves as wake up event, thus allowing an external application to almost immediately terminate power saving. After RTS0 assertion, the CTS0 line signals module wake up, i.e., readiness of the AT command interface. It is therefore recommended to enable RTS/CTS flow control (default setting).

Figure 38 shows the described RTS0 wake up mechanism.

Figure 38: Wake-up via RTS0

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3.4 Power Supply

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3.4 Power Supply

ELS81-US needs to be connected to a power supply at the SMT application interface - 2 lines BATT+, and GND. There are two separate voltage domains for BATT+:

•BATT+

Please note that throughout the document BATT+ refers to both voltage domains and power supply lines - BATT+

with a line mainly for the baseband power supply.

with a line for the UMTS/LTE power amplifier supply.

and BATT+RF.

The power supply of ELS81-US has to be a single voltage source at BATT+

and BATT+RF. It

must be able to provide the peak current during the uplink transmission.

All the key functions for supplying power to the device are handled by the power management section of the analog controller. This IC provides the following features:

• Stabilizes

the supply voltages for the baseband using low drop linear voltage regulators and

a DC-DC step down switching regulator.

• Switches the module's power voltages for the power-up and -down procedures.

• SIM switch to provide SIM power supply.

3.4.1 Power Supply Ratings

Table 12 and Table 13 assemble various voltage supply and current consumption ratings of the

module.

Table 12: Voltage supply ratings

Description Conditions Min Typ Max Unit

BATT+ Supply voltage Directly measured at Module. Voltage

must stay within the min/max values, including voltage drop, ripple, spikes.

3.0 4.5 V



Maximum allowed voltage drop during transmit burst

Voltage ripple Normal condition, power control level

Normal condition, power control level for Pout max

for Pout max @ f <= 250 kHz @ f > 250 kHz

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400 mV

12090mV

Cinterion® ELS81-US Hardware Interface Description

3.4 Power Supply

Table 13: Current consumption ratings (typical ratings to be confirmed)

Description Conditions Typical rating Unit

@ 1.8V OFF State supply

VDDLP

current

BATT+

OFF State supply

current (i.e., sum of BATT+

BATT+

RF)

Average UMTS

and

supply current

Data transfer @

maximum Pout

RTC backup @ BATT+ = 0V µA

Power Down µA

SLEEP

@ DRX=9

USB disconnected

(UART deactivated)

USB suspended

SLEEP

@ DRX=8

USB disconnected

(UART deactivated)

USB suspended

SLEEP

@ DRX=6

USB disconnected

(UART deactivated)

USB suspended

IDLE

@ DRX=6

USB disconnected

(UART active, but no communication)

USB active

UMTS Data transfer Band II mA

UMTS Data transfer Band IV mA

UMTS Data transfer Band V mA

HSPA Data transfer Band II mA

HSPA Data transfer Band IV mA

HSPA Data transfer Band V mA

Page 70 of 107

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Table 13: Current consumption ratings (typical ratings to be confirmed)

Description Conditions Typical rating Unit

BATT+

(i.e., sum of BATT+

BATT+

RF)

and

Average LTE sup-

ply current

Data transfer @

maximum Pout

SLEEP Occasions“ = 256

SLEEP Occasions“ = 128

SLEEP Occasions“ = 64

SLEEP Occasions“ = 32

IDLE (UART active, but no communication)

LTE

@ “Paging

USB disconnected

USB suspended

@ “Paging

USB disconnected

USB suspended

@ “Paging

USB disconnected

USB suspended

@ “Paging

USB disconnected

USB suspended

@ DRX=6

USB disconnected

USB active

Data transfer Band 2 mA

Data transfer Band 4 mA

Data transfer Band 5 mA

Data transfer Band 12 mA

Page 71 of 107

1. With an impedance of Z Down ratings that were measured at 3.0V.

2. Measurements start 6 minutes after switching ON the module, Averaging times: SLEEP mode - 3 minutes, transfer modes - 1.5 minutes

Communication tester settings: no neighbour cells, no cell reselection etc., RMC (reference measurement

channel). Note that SLEEP mode is enabled via AT command AT^SPOW=2, 1000, 3

3. The power save mode is disabled via AT command AT^SCFG=”MEopMode/PwrSave”, “disabled”.

4. Communication tester settings: Channel Bandwidth: 5MHz Number of Resource Blocks: 25 (DL), 1 (UL) Modulation: QPSK

=50 at the antenna connector.Measured at 25°C at 3.8V - except for Power

LOAD

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Reference point GND: Module shielding

Reference point BATT+: External test pad connected to and positioned closely to BATT+ pad 53 or 204.

External application

3.4 Power Supply

Page 72 of 107

3.4.2 Measuring the Supply Voltage (V

To measure the supply voltage V

it is possible to define two reference points GND and

BATT+

)

BATT+. GND should be the module’s shielding, while BATT+ should be a test pad on the external application the module is mounted on. The external BATT+ reference point has to be connected to and positioned close to the SMT application interface’s BATT+ pads 53 (BATT+

) or 204 (BATT+BB) as shown in Figure 39.

Figure 39: Position of reference points BATT+ and GND

3.4.3 Monitoring Power Supply by AT Command

To monitor the supply voltage you can also use the AT^SBV command which returns the value related to the reference points BATT+ and GND.

The module continuously measures the voltage at intervals depending on the operating mode of the RF interface. The duration of measuring ranges from 0.5 seconds in TALK/DATA mode to 50 seconds when ELS81-US is in IDLE mode or Limited Service (deregistered). The displayed voltage (in mV) is averaged over the last measuring period before the AT^SBV command was executed.

If the measured voltage drops below or rises above the voltage shutdown thresholds, the module will send an "^SBC" URC and shut down (for details see Section 3.2.5).

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3.5 Operating Temperatures

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3.5 Operating Temperatures

Please note that the module’s lifetime, i.e., the MTTF (mean time to failure) may be reduced, if operated outside the extended temperature range.

Table 14: Board temperature

Parameter Min Typ Max Unit

Normal operation -30 +25 +85 °C

Extended operation

Automatic shutdown

Temperature measured on ELS81-US board

1. Extended operation allows normal mode speech calls or data transmission for limited time until automatic thermal shutdown takes effect. Within the extended temperature range (outside the normal operating temperature range) the specified electrical characteristics may be in- or decreased.

2. Due to temperature measurement uncertainty, a tolerance of ±3°C on the thresholds may occur.

-40 +90 °C

<-40 --- >+90 °C

See also Section 3.2.5 for information about the NTC for on-board temperature measurement, automatic thermal shutdown and alert messages.

Note: Within the specified operating temperature ranges the board temperature may vary to a great extent depending on operating mode, used frequency band, radio output power and current supply voltage.

For more information regarding the module’s thermal behavior please refer to [4].

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Main/Diversity

Antenna

18pF

22nH

ANT_MAIN/

ANT_DRX

(Pad 59/56)

18pF

T pad attenuator circuit

Main/Diversity

Antenna

18nH

ANT_MAIN/

ANT_DRX

(Pad 59/56)

4.7pF

PI pad attenuator circuit

18nH

3.6 Electrostatic Discharge

Page 74 of 107

3.6 Electrostatic Discharge

The module is not protected against Electrostatic Discharge (ESD) in general. Consequently, it is subject to ESD handling precautions that typically apply to ESD sensitive components. Proper ESD handling and packaging procedures must be applied throughout the processing, handling and operation of any application that incorporates a ELS81-US module.

An example for an enhanced ESD protection for the SIM interface is given in Section 2.1.6.1.

ELS81-US has been tested according to group standard

ETSI EN 301 489-1 (see Table 22) and

test standard EN 61000-4-2. Electrostatic values can be gathered from the following table.

Table 15: Electrostatic values

Specification/Requirements Contact discharge Air discharge EN 61000-4-2

Antenna interfaces ±1kV n.a.

Antenna interfaces with ESD protection (see Section 3.6.1)

BATT+ ±4kV ±8kV

JEDEC JESD22-A114D (Human Body Model, Test conditions: 1.5 k, 100 pF)

All other interfaces ±1kV n.a.

±4kV ±8kV

Note: The values may vary with the individual application design. For example, it matters whether or not the application platform is grounded over external devices like a computer or other equipment, such as the Gemalto reference application described in Chapter 5.

3.6.1 ESD Protection for Antenna Interfaces

The following Figure 40 shows how to implement an external ESD protection for the RF anten- na interfaces (ANT_MAIN and ANT_DRX) with either a T pad or PI pad attenuator circuit (for RF line routing design see also Section 2.2.3).

Recommended inductor types for the above sample circuits: Size 0402 SMD from Panasonic ELJRF series (22nH and 18nH inductors) or Murata LQW15AN18NJ00 (18nH inductors only).



Figure 40: ESD protection for RF antenna interface

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GND

SMT

Application

EMI measures A

SMT

Application

EMI measures C

GND

SMT

Application

EMI measures E

GND

SMT

Application

EMI measures B

SMT

Application

EMI measures D

Page 75 of 107

3.7 Blocking against RF on Interface Lines

3.7 Blocking against RF on In terface Lines

To reduce EMI issues there are serial resistors, or capacitors to GND, implemented on the module for the ignition, emergency restart, and SIM interface lines (cp. Section 2.3). However, all other signal lines have no EMI measures on the module and there are no blocking measures at the module’s interface to an external application.

Dependent on the specific application design, it might be useful to implement further EMI measures on some signal lines at the interface between module and application. These measures are described below.

There are five possible variants of EMI measures (A-E) that may be implemented between module and external application depending on the signal line (see Figure 41 and Table 16). Pay attention not to exceed the maximum input voltages and prevent voltage overshots if using inductive EMC measures.

The maximum value of the serial resistor should be lower than 1k

 on the signal line. The max-

imum value of the capacitor should be lower than 50pF on the signal line. Please observe the electrical specification of the module‘s SMT application interface and the external application‘s interface.

Figure 41: EMI circuits

Note: In case the application uses an internal RF antenna that is implemented close to the ELS81-US module, Gemalto strongly recommends sufficient EMI measures, e.g. of type B or C, for each digital input or output.

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3.7 Blocking against RF on Interface Lines

The following table lists for each signal line at the module‘s SMT application interface the EMI measures that may be implemented.

Table 16: EMI measures on the application interface

Signal name EMI measures Remark

A B C D E

CCIN x x

CCRST x The external capacitor should be not higher

CCIO x

CCCLK x

RXD0 xxxxx

TXD0 xxxxx

CTS0 xxxxx

RTS0 xxxxx

GPIO1/DTR0 xxxxx

GPIO2/DCD0 xxxxx

GPIO3/DSR0/SPI_CLKxxxxx

GPIO4/FST_SHDN xxxxx

GPIO5/LED xxxxx

GPIO6/PWM2 xxxxx

GPIO7/PWM1 xxxxx

GPIO8/COUNTER xxxxx

GPIO11-GPIO15 xxxxx

GPIO16/RXD1/MOSIxxxxx

GPIO17/TXD1/MISO xxxxx

GPIO18/RTS1 xxxxx

GPIO19/CTS1/SPI_CSxxxxx

GPIO20 xxxxx

GPIO21 xxxxx

GPIO22 xxxxx

GPIO23 xxxxx

GPIO24/RING0 xxxxx

I2CDAT x x The rising signal edge is reduced with an

I2CCLK x x

V180 x x x

VCORE x x x

BATT+

(pad 53) x x Measures required if BATT+RF is close to

(pad 204) x x

VUSB x x x

USB_DP It is not allowed to use any external ESD or

USB_DN

than 30pF. The value of the capacitor depends on the external application.

additional capacitor.

internal RF antenna e.g., 39pF blocking capacitor to ground

EMI components at this interface signal lines.

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3.8 Reliability Characteristics

The test conditions stated below are an extract of the complete test specifications.

Table 17: Summary of reliability test conditions

Type of test Conditions Standard

Vibration Frequency range: 10-20Hz; acceleration: 5g

Frequency range: 20-500Hz; acceleration: 20g Duration: 20h per axis; 3 axes

DIN IEC 60068-2-6

Shock half-sinus Acceleration: 500g

Shock duration: 1ms 1 shock per axis 6 positions (± x, y and z)

Dry heat Temperature: +70 ±2°C

Test duration: 16h Humidity in the test chamber: < 50%

Temperature change (shock)

Damp heat cyclic High temperature: +55°C ±2°C

Cold (constant exposure)

1. For reliability tests in the frequency range 20-500Hz the Standard’s acceleration reference value was increased to 20g.

Low temperature: -40°C ±2°C High temperature: +85°C ±2°C Changeover time: < 30s (dual chamber system) Test duration: 1h Number of repetitions: 100

Low temperature: +25°C ±2°C Humidity: 93% ±3% Number of repetitions: 6 Test duration: 12h + 12h

Temperature: -40 ±2°C Test duration: 16h

DIN IEC 60068-2-27

EN 60068-2-2 Bb ETS 300 019-2-7

DIN IEC 60068-2-14 Na

ETS 300 019-2-7

DIN IEC 60068-2-30 Db

ETS 300 019-2-5

DIN IEC 60068-2-1

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Product label

Top view

Bottom view

4 Mechanical Dimensions, Mounting and Packaging

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4 Mechanical Dimensions, Mounting and Packaging

4.1 Mechanical Dimensions of ELS81-US

Figure 42 shows the top and bottom view of ELS81-US and provides an overview of the board's

mechanical dimensions. For further details see Figure 43.

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Figure 42: ELS81-US– top and bottom view

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Figure 43: Dimensions of ELS81-US (all dimensions in mm)

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4.2 Mounting ELS81-US onto the Application Platform

This section describes how to mount ELS81-US onto the PCBs, including land pattern and stencil design, board-level characterization, soldering conditions, durability and mechanical handling. For more information on issues related to SMT module integration see also [3].

Note: To avoid short circuits between signal tracks on an external application's PCB and various markings at the bottom side of the module, it is recommended not to route the signal tracks on the top layer of an external PCB directly under the module, or at least to ensure that signal track routes are sufficiently covered with solder resist.

4.2.1 SMT PCB Assembly

4.2.1.1 Land Pattern and Stencil

The land pattern and stencil design as shown below is based on Gemalto characterizations for lead-free solder paste on a four-layer test PCB and a respectively 110 µm and 150 µm thick stencil.

The land pattern given in Figure 44 reflects the module‘s pad layout, including signal pads and ground pads (for pad assignment see Section 2.1.1).

Figure 44: Land pattern (top view)

The stencil design illustrated in Figure 45 and Figure 46 is recommended by Gemalto M2M as a result of extensive tests with Gemalto M2M Daisy Chain modules.

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The central ground pads are primarily intended for stabilizing purposes, and may show some more voids than the application interface pads at the module's rim. This is acceptable, since they are electrically irrelevant.

Figure 45: Recommended design for 110µm thick stencil (top view)

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Figure 46: Recommended design for 150µm thick stencil (top view)

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4.2.1.2 Board Level Characterization

Board level characterization issues should also be taken into account if devising an SMT process.

Characterization tests should attempt to optimize the SMT process with regard to board level reliability. This can be done by performing the following physical tests on sample boards: Peel test, bend test, tensile pull test, drop shock test and temperature cycling. Sample surface mount checks are described in [3].

It is recommended to characterize land patterns before an actual PCB production, taking individual processes, materials, equipment, stencil design, and reflow profile into account. For land and stencil pattern design recommendations see also Section 4.2.1.1. Optimizing the solder stencil pattern design and print process is necessary to ensure print uniformity, to decrease solder voids, and to increase board level reliability.

Daisy chain modules for SMT characterization are available on request. For details refer to [3].

Generally, solder paste manufacturer recommendations for screen printing process parameters and reflow profile conditions should be followed. Maximum ratings are described in Section

4.2.3.

4.2.2 Moisture Sensitivity Level

ELS81-US comprises components that are susceptible to damage induced by absorbed moisture.

Gemalto M2M’s ELS81-US module complies with the latest revision of the IPC/JEDEC J-STD020 Standard for moisture sensitive surface mount devices and is classified as MSL 4.

For additional moisture sensitivity level (MSL) related information see Section 4.2.4 and Sec-

tion 4.3.2.

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Preheat

t to maximum

Time

Temperature

Smin

Smax

4.2 Mounting ELS81-US onto the Application Platform

4.2.3 Soldering Conditions and Temperature

4.2.3.1 Reflow Profile

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Figure 47: Reflow Profile

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Module

Temperature sensors (1-4)

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Table 18: Reflow temperature ratings

Profile Feature Pb-Free Assembly

Preheat & Soak Temperature Minimum (T Temperature Maximum (T Time (t

Smin

to t

Smax

) (tS)

Average ramp up rate (T

Liquidous temperature (TL) Time at liquidous (t

)

Peak package body temperature (T

Time (t perature (T

) within 5 °C of the peak package body tem-

)

Average ramp-down rate 3 K/second max.

Smin

Smax

)

150°C 200°C

60-120 seconds

to TP) 3K/second max.

217°C 50-90 seconds

)245°C +0/-5°C

30 seconds max.

Time 25°C to maximum temperature 8 minutes max.

1. Please note that the reflow profile features and ratings listed above are based on the joint industry standard IPC/JEDEC J-STD-020D.1, and are as such meant as a general guideline. For more information on reflow profiles and their optimization please refer to [3].

2. Temperatures measured on shielding at each corner. See also [3].

4.2.3.2 Maximum Temperature and Duration

The following limits are recommended for the SMT board-level soldering process to attach the module:

• A maximum module temperature of 245°C. This specifies the temperature as measured at the module’s top side.

• A maximum duration of 30 seconds at this temperature.

Please note that while the solder paste manufacturers' recommendations for best temperature and duration for solder reflow should generally be followed, the limits listed above must not be exceeded.

ELS81-US is specified for one soldering cycle only. Once ELS81-US is removed from the application, the module will very likely be destroyed and cannot be soldered onto another application.

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4.2.4 Durability and Mechanical Handling

4.2.4.1 Storage Conditions

ELS81-US modules, as delivered in tape and reel carriers, must be stored in sealed, moisture barrier anti-static bags. The conditions stated below are only valid for modules in their original packed state in weather protected, non-temperature-controlled storage locations. Normal storage time under these conditions is 12 months maximum.

Table 19: Storage conditions

Type Condition Unit Reference

Air temperature: Low

High

Humidity relative: Low

High

Air pressure: Low

High

Movement of surrounding air 1.0 m/s IEC TR 60271-3-1: 1K4

Water: rain, dripping, icing and frosting

Radiation: Solar

Heat

Chemically active substances Not

Mechanically active substances Not

Vibration sinusoidal:

Displacement Acceleration Frequency range

Shocks:

Shock spectrum Duration Acceleration

-25 +40

10 90 at 40°C

70 106

Not allowed --- ---

1120 600

recommended

1.5 5 2-9 9-200

semi-sinusoidal 1 50

°C IPC/JEDEC J-STD-033A

IPC/JEDEC J-STD-033A

kPa IEC TR 60271-3-1: 1K4

IEC TR 60271-3-1: 1K4

W/m

mm m/s Hz

ms m/s

ETS 300 019-2-1: T1.2, IEC 60068-2-2 Bb ETS 300 019-2-1: T1.2, IEC 60068-2-2 Bb

IEC TR 60271-3-1: 1C1L

IEC TR 60271-3-1: 1S1

IEC TR 60271-3-1: 1M2

IEC 60068-2-27 Ea

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4.2.4.2 Processing Life

ELS81-US must be soldered to an application within 72 hours after opening the moisture barrier bag (MBB) it was stored in.

As specified in the IPC/JEDEC J-STD-033 Standard, the manufacturing site processing the modules should have ambient temperatures below 30°C and a relative humidity below 60%.

4.2.4.3 Baking

Baking conditions are specified on the moisture sensitivity label attached to each MBB (see

Figure 52 for details):

• It is

not necessary to bake ELS81-US, if the conditions specified in Section 4.2.4.1 and Sec-

tion 4.2.4.2 were not exceeded.

necessary to bake ELS81-US, if any condition specified in Section 4.2.4.1 and Section

4.2.4.2 was exceeded.

If baking is necessary, the modules must be put into trays that can be baked to at least 125°C. Devices should not be baked in tape and reel carriers at any temperature.

4.2.4.4 Electrostatic Discharge

Electrostatic discharge (ESD) may lead to irreversable damage for the module. It is therefore advisable to develop measures and methods to counter ESD and to use these to control the electrostatic environment at manufacturing sites.

Please refer to Section 3.6 for further information on electrostatic discharge.

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44mm

330mm

Reel direction of the

completely equipped tape

Direction into SMD machine

View

direction

Pad 1

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4.3 Packaging

4.3.1 Tape and Reel

The single-feed tape carrier for ELS81-US is illustrated in Figure 48. The figure also shows the proper part orientation. The tape width is 44mm and the ELS81-US modules are placed on the tape with a 32-mm pitch. The reels are 330mm in diameter with a core diameter of 100mm. Each reel contains 500 modules.

4.3.1.1 Orientation

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Figure 48: Carrier tape

Figure 49: Reel direction

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4.3.1.2 Barcode Label

A barcode label provides detailed information on the tape and its contents. It is attached to the reel.

Figure 50: Barcode label on tape reel

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4.3.2 Shipping Materials

ELS81-US is distributed in tape and reel carriers. The tape and reel carriers used to distribute ELS81-US are packed as described below, including the following required shipping materials:

• Moisture barrier bag, including desiccant and humidity indicator card

• Transportation box

4.3.2.1 Moisture Barrier Bag

The tape reels are stored inside a moisture barrier bag (MBB), together with a humidity indicator card and desiccant pouches - see Figure 51. The bag is ESD protected and delimits moisture transmission. It is vacuum-sealed and should be handled carefully to avoid puncturing or tearing. The bag protects the ELS81-US modules from moisture exposure. It should not be opened until the devices are ready to be soldered onto the application.

Figure 51: Moisture barrier bag (MBB) with imprint

The label shown in Figure 52 summarizes requirements regarding moisture sensitivity, including shelf life and baking requirements. It is attached to the outside of the moisture barrier bag.

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Figure 52: Moisture Sensitivity Label

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MBBs contain one or more desiccant pouches to absorb moisture that may be in the bag. The humidity indicator card described below should be used to determine whether the enclosed components have absorbed an excessive amount of moisture.

The desiccant pouches should not be baked or reused once removed from the MBB.

The humidity indicator card is a moisture indicator and is included in the MBB to show the approximate relative humidity level within the bag. Sample humidity cards are shown in Figure 53. If the components have been exposed to moisture above the recommended limits, the units will have to be rebaked.

Figure 53: Humidity Indicator Card - HIC

A baking is required if the humidity indicator inside the bag indicates 10% RH or more.

4.3.2.2 Transportation Box

Tape and reel carriers are distributed in a box, marked with a barcode label for identification purposes. A box contains two reels with 500 modules each.

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4.3.3 Trays

If small module quantities are required, e.g., for test and evaluation purposes, ELS81-US may be distributed in trays (for dimensions see Figure 54). The small quantity trays are an alternative to the single-feed tape carriers normally used. However, the trays are not designed for machine processing. They contain modules to be (hand) soldered onto an external application (for information on hand soldering see [3]).

Trays are packed and shipped in the same way as tape carriers, including a moisture barrier bag with desiccant and humidity indicator card as well as a transportation box (see also Section

4.3.2).

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Figure 54: Tray dimensions

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5 Regulatory and Type Approval Information

5.1 Directives and Standards

ELS81-US is designed to comply with the directives and standards listed below.

It is the responsibility of the application manufacturer to ensure compliance of the final product with all provisions of the applicable directives and standards as well as with the technical specifications provided in the "ELS81-US Hardware Interface Description”.

Table 20: Directives

2014/53/EU Directive of the European Parliament and of the council of 16 April 2014 on

the harmonization of the laws of the Member States relating to the making available on the market of radio equipment and repealing Directive 1999/ 05/EC.

The product is labeled with the CE conformity mark.

2002/95/EC (RoHS 1) 2011/65/EC (RoHS 2)

Table 21: Standards of North American type approval

CFR Title 47 Code of Federal Regulations, Part 22 and Part 24 (Telecommunications,

OET Bulletin 65 (Edition 97-01)

UL 60 950-1 Product Safety Certification (Safety requirements)

NAPRD.03 V5.15 Overview of PCS Type certification review board Mobile Equipment Type

RSS132 (Issue2) RSS133 (Issue5)

Table 22: Standards of European type approval

Directive of the European Parliament and of the Council of 27 January 2003 (and revised on 8 June 2011) on the restriction of the use of certain hazardous substances in electrical and electronic equipment (RoHS)

PCS); US Equipment Authorization FCC

Evaluating Compliance with FCC Guidelines for Human Exposure to Radiofrequency Electromagnetic Fields

Certification and IMEI control PCS Type Certification Review board (PTCRB)

Canadian Standard

3GPP TS 51.010-1 Digital cellular telecommunications system (Release 9); Mobile Station

(MS) conformance specification;

GCF-CC V3.61.2 Global Certification Forum - Certification Criteria

ETSI EN 301 511 V12.5.1

1. Manufacturers of applications which can be used in the US shall ensure that their applications have a PTCRB approval. For this purpose they can refer to the PTCRB approval of the respective module.



Global System for Mobile communications (GSM); Mobile Stations (MS) equipment; Harmonized Standard covering the essential requirements of article 3.2 of Directive 2014/53/EU

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Table 22: Standards of European type approval

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Draft ETSI EN 301 48901 V2.2.0

Electromagnetic Compatibility (EMC) standard for radio equipment and services; Part 1: Common technical requirements; Harmonized Standard covering the essential requirements of article 3.1(b) of Directive 2014/53/EU and the essential requirements of article 6 of Directive 2014/30/EU

Draft ETSI EN 301 489-52 V1.1.0

Electromagnetic Compatibility (EMC) standard for radio equipment and services; Part 52: Specific conditions for Cellular Communication Mobile and portable (UE) radio and ancillary equipment; Harmonized Standard covering the essential requirements of article 3.1(b) of Directive 2014/53/EU

ETSI EN 301 908-1 V11.1.1

IMT cellular networks; Harmonized Standard covering the essential requirements of article 3.2 of the Directive 2014/53/EU; Part 1: Introduction and common requirements

ETSI EN 301 908-13 V11.1.1

IMT cellular networks; Harmonized Standard covering the essential requirements of article 3.2 of the Directive 2014/53/EU; Part 13: Evolved Universal Terrestrial Radio Access (E-UTRA) User Equipment (UE)

EN 60950-1: 2006

Safety of information technology equipment +A11:2009+A1:2010+A 12:2011+A2:2013

Table 23: Requirements of quality

IEC 60068 Environmental testing

DIN EN 60529 IP codes

Table 24: Standards of the Ministry of Information Industry of the People’s Republic of China

SJ/T 11363-2006 “Requirements for Concentration Limits for Certain Hazardous Sub-

stances in Electronic Information Products” (2006-06).

SJ/T 11364-2006 “Marking for Control of Pollution Caused by Electronic

Information Products” (2006-06).

According to the “Chinese Administration on the Control of Pollution caused by Electronic Information Products” (ACPEIP) the EPUP, i.e., Environmental Protection Use Period, of this product is 20 years as per the symbol shown here, unless otherwise marked. The EPUP is valid only as long as the product is operated within the operating limits described in the Gemalto M2M Hardware Interface Description.

Please see Table 25 for an overview of toxic or hazardous substances or elements that might be contained in product parts in concentrations above the limits defined by SJ/T 11363-2006.

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Table 25: Toxic or hazardous substances or elements with defined concentration limits

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5.2 SAR requirements specific to portable mobiles

Mobile phones, PDAs or other portable transmitters and receivers incorporating a UMTS module must be in accordance with the guidelines for human exposure to radio frequency energy. This requires the Specific Absorption Rate (SAR) of portable ELS81-US based applications to be evaluated and approved for compliance with national and/or international regulations.

Since the SAR value varies significantly with the individual product design manufacturers are advised to submit their product for approval if designed for portable use. For US-markets the relevant directives are mentioned below. It is the responsibility of the manufacturer of the final product to verify whether or not further standards, recommendations or directives are in force outside these areas.

Products intended for sale on US markets

ES 59005/ANSI C95.1 Considerations for evaluation of human exposure to Electromagnetic

Fields (EMFs) from Mobile Telecommunication Equipment (MTE) in the frequency range 30MHz - 6GHz

Please note that SAR requirements are specific only for portable devices and not for mobile devices as defined below:

• Portable device: A portable device is defined as a transmitting device designed to be used so that the radiating structure(s) of the device is/are within 20 centimeters of the body of the user.

• Mobile device: A mobile device is defined as a transmitting device designed to be used in other than fixed locations and to generally be used in such a way that a separation distance of at least 20 centimeters is normally maintained between the transmitter's radiating structure(s) and the body of the user or nearby persons. In this context, the term ''fixed location'' means that the device is physically secured at one location and is not able to be easily moved to another location.

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DSB75

AH6‐Adapter

SIMCard

SMA

USB

Power Supply

LTE/ GPRS/ UMTS

Base Station

Dive rsit y

Antenna

USB

ASC0

Main

Antenna

Eval_Board

ELS61

Eval_Board

ELS61

ASC1

5.3 Reference Equipment for Type Approval

Page 97 of 107

The Gemalto M2M reference setup submitted to type approve ELS81-US (including a special approval adapter for the DSB75) is shown in the following figure

1. For RF performance tests a mini-SMT/U.FL to SMA adapter with attached 6dB coaxial attenuator is chosen to connect the evaluation module directly to the UMTS test equipment instead of employing the SMA antenna connectors on the ELS81-US-DSB75 adapter as shown in Figure 55. The following products are recommended: Hirose SMA-Jack/U.FL-Plug conversion adapter HRMJ-U.FLP(40) (for details see http://www.hirose-connectors.com/ or http://www.farnell.com/

Figure 55: Reference equipment for Type Approval



Aeroflex Weinschel Fixed Coaxial Attenuator Model 3T/4T (for details see http://www.aeroflex.com/ams/weinschel/pdfiles/wmod3&4T.pdf)

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5.4 Compliance with FCC and IC Rules and Regulations

The Equipment Authorization Certification for the Gemalto M2M reference application described in Section 5.3 will be registered under the following identifiers:

FCC Identifier: QIPELS81-US Industry Canada Certification Number: 7830A-ELS81US Granted to Gemalto M2M GmbH

Manufacturers of mobile or fixed devices incorporating ELS81-US modules are authorized to use the FCC Grants and Industry Canada Certificates of the ELS81-US modules for their own final products according to the conditions referenced in these documents. In this case, an FCC/ IC label of the module shall be visible from the outside, or the host device shall bear a second label stating "Contains FCC ID: QIPELS81-US", and accordingly “Contains IC: 7830A-ELS81 integration is limited to fixed or mobile categorized host devices, where a separation distance between the antenna and any person of min. 20cm can be assured during normal operating conditions. For mobile and fixed operation configurations the antenna gain, including cable loss, must not exceed the limit 2.15 dBi for 700MHz, 850MHz, 1700MHz and 1900MHz. IMPORTANT: Manufacturers of portable applications incorporating ELS81-US modules are required to have their final product certified and apply for their own FCC Grant and Industry Canada Certificate related to the specific portable mobile. This is mandatory to meet the SAR requirements for portable mobiles (see Section 5.2 for detail).

US“. The

Changes or modifications not expressly approved by the party responsible for compliance could void the user's authority to operate the equipment.

Note: This equipment has been tested and found to comply with the limits for a Class B digital device, pursuant to part 15 of the FCC Rules and with Industry Canada license-exempt RSS standard(s). These limits are designed to provide reasonable protection against harmful interference in a residential installation. This equipment generates, uses and can radiate radio frequency energy and, if not installed and used in accordance with the instructions, may cause harmful interference to radio communications. However, there is no guarantee that interference will not occur in a particular installation. If this equipment does cause harmful interference to radio or television reception, which can be determined by turning the equipment off and on, the user is encouraged to try to correct the interference by one or more of the following measures:

• Reorient or relocate the receiving antenna.

• Increase the separation between the equipment and receiver.

• Connect the equipment into an outlet on a circuit different from that to which the receiver is connected.

• Consult the dealer or an experienced radio/TV technician for help.

This Class B digital apparatus complies with Canadian ICES-003.

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If Canadian approval is requested for devices incorporating ELS81-US modules the below notes will have to be provided in the English and French language in the final user documentation. Manufacturers/OEM Integrators must ensure that the final user documentation does not contain any information on how to install or remove the module from the final product.

Notes (IC):

(EN) This Class B digital apparatus complies with Canadian ICES-003 and RSS-210. Operation is subject to the following two conditions: (1) this device may not cause interference, and (2) this device must accept any interference, including interference that may cause undesired operation of the device.

(FR) Cet appareil numérique de classe B est conforme aux normes canadiennes ICES-003 et RSS-210. Son fonctionnement est soumis aux deux conditions suivantes: (1) cet appareil ne doit pas causer d'interférence et (2) cet appareil doit accepter toute interférence, notamment les interférences qui peuvent affecter son fonctionnement.

(EN) Radio frequency (RF) Exposure Information The radiated output power of the Wireless Device is below the Industry Canada (IC) radio frequency exposure limits. The Wireless Device should be used in such a manner such that the potential for human contact during normal operation is minimized. This device has also been evaluated and shown compliant with the IC RF Exposure limits under mobile exposure conditions. (antennas at least 20cm from a person‘s body).

(FR) Informations concernant l'exposltion aux fréquences radio (RF) La puissance de sortie émise par l'appareil de sans fiI est inférieure à la limite d'exposition aux fréquences radio d‘Industry Canada (IC). Utilisez l'appareil de sans fil de façon à minimiser les contacts humains lors du fonctionnement normal.

Ce périphérique a également été évalué et démontré conforme aux limites d'exposition aux RF d'IC dans des conditions d'exposition à des appareils mobiles (les antennes se situent à moins de 20cm du corps d'une personne).

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6 Document Information

104

6 Document Information

6.1 Revision History

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New document: "Cinterion

Chapter What is new

-- Initial document setup.

ELS81-US Hardware Interface Description" Version 01.004

6.2 Related Documents

[1] ELS81-US AT Command Set [2] ELS81-US Release Note [3] Application Note 48: SMT Module Integration [4] Application Note 40: Thermal Solutions [5] Universal Serial Bus Specification Revision 2.0, April 27, 2000

6.3 Terms and Abbreviations

Abbreviation Description

ADC Analog-to-digital converter

AGC Automatic Gain Control

ANSI American National Standards Institute

ARFCN Absolute Radio Frequency Channel Number

ARP Antenna Reference Point

ASC0/ASC1 Asynchronous Controller. Abbreviations used for first and second serial interface of

ELS81-US

B Thermistor Constant

BER Bit Error Rate

BIP Bearer Independent Protocol

BTS Base Transceiver Station

CB or CBM Cell Broadcast Message

CE Conformité Européene (European Conformity)

CHAP Challenge Handshake Authentication Protocol

CPU Central Processing Unit

CS Coding Scheme

CSD Circuit Switched Data

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Gemalto M2M ELS81 US User Manual

Specifications and Main Features

Frequently Asked Questions

User Manual

Contents

Tables

Figures

1 Introduction

1.1 Key Features at a Glance

1.2 ELS81-US System Overview

1.3 Circuit Concept

2 Interface Characteristics

2.1 Application Interface

2.1.1 Pad Assignment

2.1.2 Signal Properties

2.1.2.1 Absolute Maximum Ratings

2.1.3 USB Interface

2.1.3.1 Reducing Power Consumption

2.1.4 Serial Interface ASC0

2.1.5 Serial Interface ASC1

2.1.6 UICC/SIM/USIM Interface

2.1.6.1 Enhanced ESD Protection for SIM Interface

2.1.7 RTC Backup

2.1.8 GPIO Interface

2.1.9 I2C Interface

2.1.10 SPI Interface

2.1.11 PWM Interfaces

2.1.12 Pulse Counter

2.1.13 Control Signals

2.1.13.1 Status LED

2.1.13.2 Power Indication Circuit

2.1.13.3 Host Wakeup

2.1.13.4 Fast Shutdown

2.2 RF Antenna Interface

2.2.1 Antenna Interface Specifications

2.2.2 Antenna Installation

2.2.3 RF Line Routing Design

2.2.3.1 Line Arrangement Examples

2.2.3.2 Routing Example

2.3 Sample Application

2.3.1 Sample Level Conversion Circuit

3 Operating Characteristics

3.1 Operating Modes

3.2 Power Up/Power Down Scenarios

3.2.1 Turn on ELS81-US

3.2.1.1 Connecting ELS81-US BATT+ Lines

3.2.1.2 Switch on ELS81-US Using ON Signal

3.2.1.3 Automatic Power On

3.2.2 Restart ELS81-US

3.2.2.1 Restart ELS81-US via AT+CFUN Command

3.2.2.2 Restart ELS81-US Using EMERG_RST

3.2.3 Signal States after Startup

3.2.4 Turn off ELS81-US

3.2.4.1 Switch off ELS81-US Using AT Command

3.2.5 Automatic Shutdown

3.2.5.1 Thermal Shutdown

3.2.5.2 Undervoltage Shutdown

3.2.5.3 Overvoltage Shutdown

3.3 Power Saving

3.3.1 Power Saving while Attached to WCDMA Networks

3.3.2 Power Saving while Attached to LTE Networks

3.3.3 Wake-up via RTS0

3.4 Power Supply

3.4.1 Power Supply Ratings

3.4.3 Monitoring Power Supply by AT Command

3.5 Operating Temperatures

3.6 Electrostatic Discharge

3.6.1 ESD Protection for Antenna Interfaces

3.7 Blocking against RF on Interface Lines

3.8 Reliability Characteristics

4 Mechanical Dimensions, Mounting and Packaging

4.1 Mechanical Dimensions of ELS81-US

4.2 Mounting ELS81-US onto the Application Platform

4.2.1 SMT PCB Assembly

4.2.1.1 Land Pattern and Stencil

4.2.1.2 Board Level Characterization

4.2.2 Moisture Sensitivity Level

4.2.3 Soldering Conditions and Temperature

4.2.3.1 Reflow Profile

4.2.3.2 Maximum Temperature and Duration