Gemalto M2M ELS61 USA User Manual

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Cinterion® ELS61-USA
Hardware Interface Description
Version: 01.040a DocId: els61-usa_hid_v01.040a
M2M.GEMALTO.COM
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Cinterion® ELS61-USA Hardware Interface Description
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Document Name:
Version:
Date:
DocId:
Status
Cinterion
®
ELS61-USA Hardware Interface Description
01.040a 2017-08-31 els61-usa_hid_v01.040a Confidential / Preliminary
GENERAL NOTE
Copyright
Transmittal, reproduction, dissemination and/or editing of this document as well as utilization of its con­tents and communication thereof to others without express authorization are prohibited. Offenders will be held liable for payment of damages. All rights created by patent grant or registration of a utility model or design patent are reserved.
Copyright © 2017, Gemalto M2M GmbH, a Gemalto Company
Trademark Notice
Gemalto, the Gemalto logo, are trademarks and service marks of Gemalto and are registered in certain countries. Microsoft and Windows are either registered trademarks or trademarks of Microsoft Corpora­tion in the United States and/or other countries. All other registered trademarks or trademarks mentioned in this document are property of their respective owners.
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Contents

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Contents
1 Introduction.................................................................................................................9
1.1 Key Features at a Glance .................................................................................. 9
1.2 ELS61-USA System Overview......................................................................... 12
1.3 Circuit Concept ................................................................................................ 13
2 Interface Characteristics ..........................................................................................15
2.1 Application Interface ........................................................................................ 15
2.1.1 Pad Assignment.................................................................................. 15
2.1.2 Signal Properties................................................................................. 17
2.1.2.1 Absolute Maximum Ratings ................................................ 23
2.1.3 USB Interface...................................................................................... 24
2.1.3.1 Reducing Power Consumption............................................ 25
2.1.4 Serial Interface ASC0 ......................................................................... 26
2.1.5 Serial Interface ASC1 ......................................................................... 28
2.1.6 UICC/SIM/USIM Interface................................................................... 30
2.1.6.1 Enhanced ESD Protection for SIM Interface....................... 32
2.1.7 Digital Audio Interface (DAI) ............................................................... 33
2.1.7.1 Pulse Code Modulation Interface (PCM)............................. 33
2.1.7.2 Inter IC Sound Interface ...................................................... 35
2.1.7.3 Solutions for the Digital Audio Interface .............................. 36
2.1.7.4 Electrical Characteristics of the Voiceband Part ................. 37
2.1.8 RTC Backup........................................................................................ 39
2.1.9 GPIO Interface .................................................................................... 40
2.1.10 I
2.1.11 SPI Interface ....................................................................................... 44
2.1.12 PWM Interfaces .................................................................................. 45
2.1.13 Pulse Counter ..................................................................................... 45
2.1.14 Control Signals.................................................................................... 45
2.2 RF Antenna Interface....................................................................................... 48
2.2.1 Antenna Interface Specifications ........................................................ 48
2.2.2 Antenna Installation ............................................................................ 50
2.2.3 RF Line Routing Design...................................................................... 51
2.3 Sample Application .......................................................................................... 57
2.3.1 Sample Level Conversion Circuit........................................................ 59
2
C Interface ........................................................................................ 42
2.1.14.1 Status LED .......................................................................... 45
2.1.14.2 Power Indication Circuit ...................................................... 46
2.1.14.3 Host Wakeup....................................................................... 46
2.1.14.4 Fast Shutdown .................................................................... 47
2.2.3.1 Line Arrangement Examples ............................................... 51
2.2.3.2 Routing Example................................................................. 56
3 Operating Characteristics........................................................................................60
3.1 Operating Modes ............................................................................................. 60
3.2 Power Up/Power Down Scenarios................................................................... 61
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3.2.1 Turn on ELS61-USA ........................................................................... 61
3.2.1.1 Connecting ELS61-USA BATT+ Lines ................................ 61
3.2.1.2 Switch on ELS61-USA Using ON Signal............................. 63
3.2.1.3 Automatic Power On ........................................................... 64
3.2.2 Restart ELS61-USA ............................................................................ 65
3.2.2.1 Restart ELS61-USA via AT+CFUN Command.................... 65
3.2.2.2 Restart ELS61-USA Using EMERG_RST........................... 66
3.2.3 Signal States after Startup .................................................................. 67
3.2.4 Turn off ELS61-USA ........................................................................... 68
3.2.4.1 Switch off ELS61-USA Using AT Command........................ 68
3.2.5 Automatic Shutdown ........................................................................... 70
3.2.5.1 Thermal Shutdown .............................................................. 70
3.2.5.2 Undervoltage Shutdown...................................................... 71
3.2.5.3 Overvoltage Shutdown........................................................ 71
3.3 Power Saving................................................................................................... 72
3.3.1 Power Saving while Attached to WCDMA Networks .......................... 72
3.3.2 Power Saving while Attached to LTE Networks.................................. 73
3.3.3 Wake-up via RTS0.............................................................................. 74
3.4 Power Supply................................................................................................... 75
3.4.1 Power Supply Ratings......................................................................... 75
3.4.2 Measuring the Supply Voltage (VBATT+)........................................... 78
3.4.3 Monitoring Power Supply by AT Command ........................................ 78
3.5 Operating Temperatures.................................................................................. 79
3.6 Electrostatic Discharge .................................................................................... 80
3.6.1 ESD Protection for Antenna Interfaces ............................................... 80
3.7 Blocking against RF on Interface Lines ........................................................... 81
3.8 Reliability Characteristics................................................................................. 83
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4 Mechanical Dimensions, Mounting and Packaging...............................................84
4.1 Mechanical Dimensions of ELS61-USA........................................................... 84
4.2 Mounting ELS61-USA onto the Application Platform....................................... 86
4.2.1 SMT PCB Assembly ........................................................................... 86
4.2.1.1 Land Pattern and Stencil..................................................... 86
4.2.1.2 Board Level Characterization.............................................. 88
4.2.2 Moisture Sensitivity Level ................................................................... 88
4.2.3 Soldering Conditions and Temperature .............................................. 89
4.2.3.1 Reflow Profile ...................................................................... 89
4.2.3.2 Maximum Temperature and Duration.................................. 90
4.2.4 Durability and Mechanical Handling.................................................... 91
4.2.4.1 Storage Conditions.............................................................. 91
4.2.4.2 Processing Life.................................................................... 92
4.2.4.3 Baking ................................................................................. 92
4.2.4.4 Electrostatic Discharge ....................................................... 92
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4.3 Packaging ........................................................................................................ 93
4.3.1 Tape and Reel .................................................................................... 93
4.3.1.1 Orientation........................................................................... 93
4.3.1.2 Barcode Label ..................................................................... 94
4.3.2 Shipping Materials .............................................................................. 95
4.3.2.1 Moisture Barrier Bag ........................................................... 95
4.3.2.2 Transportation Box.............................................................. 97
4.3.3 Trays ................................................................................................... 98
5 Regulatory and Type Approval Information...........................................................99
5.1 Directives and Standards................................................................................. 99
5.2 SAR requirements specific to portable mobiles ............................................. 102
5.3 Reference Equipment for Type Approval....................................................... 103
5.4 Compliance with FCC and IC Rules and Regulations ................................... 104
6 Document Information............................................................................................106
6.1 Revision History ............................................................................................. 106
6.2 Related Documents ....................................................................................... 106
6.3 Terms and Abbreviations ............................................................................... 106
6.4 Safety Precaution Notes ................................................................................ 110
7 Appendix..................................................................................................................111
7.1 List of Parts and Accessories......................................................................... 111
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Tables

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Tables
Table 1: Pad assignments............................................................................................ 16
Table 2: Signal properties ............................................................................................ 17
Table 3: Absolute maximum ratings............................................................................. 23
Table 4: Signals of the SIM interface (SMT application interface) ............................... 30
Table 5: Overview of DAI/PCM lines............................................................................ 33
Table 6: Overview of DAI/I
Table 7: Audio parameters adjustable by AT command .............................................. 37
Table 8: GPIO lines and possible alternative assignment............................................ 40
Table 9: Host wakeup lines.......................................................................................... 46
Table 10: Return loss in the active band........................................................................ 48
Table 11: RF Antenna interface UMTS/LTE (at operating temperature range) ............. 48
Table 12: Overview of operating modes ........................................................................ 60
Table 13: Signal states................................................................................................... 67
Table 14: Temperature dependent behavior.................................................................. 70
Table 15: Voltage supply ratings.................................................................................... 75
Table 16: Current consumption ratings.......................................................................... 76
Table 17: Board temperature ......................................................................................... 79
Table 18: Electrostatic values ........................................................................................ 80
Table 19: EMI measures on the application interface.................................................... 82
Table 20: Summary of reliability test conditions............................................................. 83
Table 21: Reflow temperature ratings............................................................................ 90
Table 22: Storage conditions ......................................................................................... 91
Table 23: Directives ....................................................................................................... 99
Table 24: Standards of North American type approval .................................................. 99
Table 25: Standards of European type approval............................................................ 99
Table 26: Requirements of quality ............................................................................... 100
Table 27: Standards of the Ministry of Information Industry of the
People’s Republic of China.......................................................................... 100
Table 28: Toxic or hazardous substances or elements with defined
concentration limits ...................................................................................... 101
Table 29: List of parts and accessories........................................................................ 111
Table 30: Molex sales contacts (subject to change) .................................................... 112
2
S lines ............................................................................... 35
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Figures

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Figures
Figure 1: ELS61-USA system overview ........................................................................ 12
Figure 2: ELS61-USA block diagram ............................................................................ 13
Figure 3: ELS61-USA RF section block diagram .......................................................... 14
Figure 4: Numbering plan for connecting pads (bottom view)....................................... 15
Figure 5: USB circuit ..................................................................................................... 24
Figure 6: Serial interface ASC0..................................................................................... 26
Figure 7: ASC0 startup behavior................................................................................... 27
Figure 8: Serial interface ASC1..................................................................................... 28
Figure 9: ASC1 startup behavior................................................................................... 29
Figure 10: External UICC/SIM/USIM card holder circuit ................................................. 31
Figure 11: SIM interface - enhanced ESD protection...................................................... 32
Figure 12: Long frame PCM timing, 256kHz ................................................................... 34
Figure 13: DAI startup timing........................................................................................... 34
Figure 14: I
Figure 15: Block circuit for DAI to analog converter........................................................ 36
Figure 16: Sample circuit for analog to DAI box.............................................................. 36
Figure 17: Audio programming model............................................................................. 37
Figure 18: RTC supply variants....................................................................................... 39
Figure 19: GPIO startup behavior ................................................................................... 41
Figure 20: I Figure 21: I
Figure 22: Characteristics of SPI modes......................................................................... 44
Figure 23: Status signaling with LED driver .................................................................... 45
Figure 24: Power indication circuit .................................................................................. 46
Figure 25: Fast shutdown timing ..................................................................................... 47
Figure 26: Antenna pads (bottom view) .......................................................................... 50
Figure 27: Embedded Stripline with 65µm prepreg (1080) and 710µm core .................. 51
Figure 28: Micro-Stripline on 1.0mm standard FR4 2-layer PCB - example 1 ................ 52
Figure 29: Micro-Stripline on 1.0mm Standard FR4 PCB - example 2............................ 53
Figure 30: Micro-Stripline on 1.5mm Standard FR4 PCB - example 1............................ 54
Figure 31: Micro-Stripline on 1.5mm Standard FR4 PCB - example 2............................ 55
Figure 32: Routing to application‘s RF connector - top view........................................... 56
Figure 33: Schematic diagram of ELS61-USA sample application ................................. 58
Figure 34: Sample level conversion circuit...................................................................... 59
Figure 35: Sample circuit for applying power using an external µC ................................ 62
Figure 36: ON circuit options........................................................................................... 63
Figure 37: ON timing ....................................................................................................... 64
Figure 38: Automatic ON circuit based on voltage detector - option 1............................ 64
Figure 39: Automatic ON circuit based on voltage detector - option 2............................ 65
Figure 40: Emergency restart timing ............................................................................... 66
Figure 41: Switch off behavior......................................................................................... 69
Figure 42: Power saving and paging in WCDMA networks............................................. 72
Figure 43: Power saving and paging in LTE networks.................................................... 73
Figure 44: Wake-up via RTS0......................................................................................... 74
Figure 45: Position of reference points BATT+ and GND ............................................... 78
Figure 46: ESD protection for RF antenna interface ....................................................... 80
Figure 47: EMI circuits..................................................................................................... 81
Figure 48: ELS61-USA– top and bottom view................................................................. 84
Figure 49: Dimensions of ELS61-USA (all dimensions in mm) ....................................... 85
Figure 50: Land pattern (top view) .................................................................................. 86
2
S timing, 8kHz sample rate.......................................................................... 35
2
C interface connected to V180 .................................................................... 42
2
C startup behavior ....................................................................................... 43
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Figures
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Figure 51: Recommended design for 110µm thick stencil (top view).............................. 87
Figure 52: Recommended design for 150µm thick stencil (top view).............................. 87
Figure 53: Reflow Profile................................................................................................. 89
Figure 54: Carrier tape .................................................................................................... 93
Figure 55: Reel direction ................................................................................................. 93
Figure 56: Barcode label on tape reel ............................................................................. 94
Figure 57: Moisture barrier bag (MBB) with imprint......................................................... 95
Figure 58: Moisture Sensitivity Label .............................................................................. 96
Figure 59: Humidity Indicator Card - HIC ........................................................................ 97
Figure 60: Tray dimensions............................................................................................. 98
Figure 61: Reference equipment for Type Approval ..................................................... 103
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1 Introduction

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1 Introduction
This document1 describes the hardware of the Cinterion® ELS61-USA module. It helps you quickly retrieve interface specifications, electrical and mechanical details and information on the requirements to be considered for integrating further components.

1.1 Key Features at a Glance

Feature Implementation
General
Frequency bands UMTS/HSPA+: Triple band, 850 (BdV) / AWS (BdIV) / 1900MHz (BdII)
LTE: Quad band, 700 (Bd12) / 850 (Bd5) / AWS (Bd4) / 1900MHz (Bd2)
Output power (according to Release 99)
Output power (according to Release 8)
Power supply 3.0V to 4.5V
Operating temperature (board temperature)
Physical Dimensions: 27.6mm x 25.4mm x 2.2mm
RoHS All hardware components fully compliant with EU RoHS Directive
LTE features
3GPP Release 9 UE CAT 1 supported
HSPA features
Class 3 (+24dBm +1/-3dB) for UMTS 1900,WCDMA FDD BdII Class 3 (+24dBm +1/-3dB) for UMTS AWS, WCDMA FDD BdIV Class 3 (+24dBm +1/-3dB) for UMTS 850, WCDMA FDD BdV
Class 3 (+23dBm ±2dB) for LTE 1900,LTE FDD Bd2 Class 3 (+23dBm ±2dB) for LTE AWS, LTE FDD Bd4 Class 3 (+23dBm ±2dB) for LTE 850, LTE FDD Bd5 Class 3 (+23dBm ±2dB) for LTE 700, LTE FDD Bd12
Normal operation: -30°C to +85°C Extended operation: -40°C to +90°C
Weight: approx. 3.5g
DL 10.2Mbps, UL 5.2Mbps
3GPP Release 8 DL 7.2Mbps, UL 5.7Mbps
HSDPA Cat.8 / HSUPA Cat.6 data rates Compressed mode (CM) supported according to 3GPP TS25.212
UMTS features
3GPP Release 4 PS data rate – 384 kbps DL / 384 kbps UL
CS data rate – 64 kbps DL / 64 kbps UL
1. The document is effective only if listed in the appropriate Release Notes as part of the technical docu­mentation delivered with your Gemalto M2M product.
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1.1 Key Features at a Glance
14
Feature Implementation
SMS Point-to-point MT and MO
Cell broadcast Text and PDU mode Storage: SIM card plus SMS locations in mobile equipment
Software
AT commands Hayes 3GPP TS 27.007, TS 27.005, Gemalto M2M
AT commands for RIL compatibility
Java™ Open Platform Java™ Open Platform with
Java™ profile IMP-NG & CLDC 1.1 HI
Secure data transmission via HTTPS/SSL
Multi-threading programming and multi-application execution
Major benefits: seamless integration into Java applications, ease of pro­gramming, no need for application microcontroller, extremely cost-efficient hardware and software design – ideal platform for industrial applications.
1
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The memory space available for Java programs is 30MB in the flash file system and 18MB RAM. Application code and data share the space in the flash file system and in RAM.
Microsoft™ compatibility RIL for Pocket PC and Smartphone
SIM Application Toolkit SAT letter classes b, c, e; with BIP
Audio Support for Voice over LTE (VoLTE), i.e. Voice Service via IMS (IP-based
Multimedia Subsystem) with CSFB
Firmware update Generic update from host application over ASC0 or USB modem.
Interfaces
Module interface Surface mount device with solderable connection pads (SMT application
interface). Land grid array (LGA) technology ensures high solder joint reli­ability and allows the use of an optional module mounting socket.
For more information on how to integrate SMT modules see also [3]. This application note comprises chapters on module mounting and application layout issues as well as on additional SMT application development equip­ment.
USB USB 2.0 High Speed (480Mbit/s) device interface, Full Speed (12Mbit/s)
compliant
2 serial interfaces ASC0 (shared with GPIO lines):
8-wire modem interface with status and control lines, unbalanced, asyn­chronous
Adjustable baud rates: 1,200bps to 921,600bps
Autobauding: 1,200bps to 230,400bps
Supports RTS0/CTS0 hardware flow control.
ASC1 (shared with GPIO lines):
4-wire, unbalanced asynchronous interface
Adjustable baud rates: 1,200bps to 921,60bps
Autobauding: 1,200bps to 230,400bps
Supports RTS1/CTS1 hardware flow control
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1.1 Key Features at a Glance
14
Feature Implementation
Audio 1 digital audio interface (DAI), shared with GPIO lines
UICC interface Supported SIM/USIM cards: 3V, 1.8V
GPIO interface 22 GPIO lines comprising:
13 lines shared with ASC0, ASC1 and SPI lines, with network status indica­tion, PWM functionality, fast shutdown and pulse counter 4 GPIO lines shared with DAI interface 5 GPIO lines not shared
2
I
C interface Supports I2C serial interface
SPI interface Serial peripheral interface, shared with GPIO lines
Antenna interface pads 50. UMTS/LTE main antenna, UMTS/LTE Rx Diversity antenna
Power on/off, Reset
Power on/off Switch-on by hardware signal ON
Switch-off by AT command Switch off by hardware signal FST_SHDN instead of AT command Automatic switch-off in case of critical temperature or voltage conditions
Reset Orderly shutdown and reset by AT command
Emergency reset by hardware signal EMERG_RST
Special features
Real time clock Timer functions via AT commands
TTY/CTM support Integrated CTM modem
Evaluation kit
Evaluation module ELS61-USA module soldered onto a dedicated PCB that can be connected
to an adapter in order to be mounted onto the DSB75.
DSB75 DSB75 Development Support Board designed to test and type approve
Gemalto M2M modules and provide a sample configuration for application engineering. A special adapter is required to connect the ELS61-USA eval­uation module to the DSB75.
1. HTTP/SecureConnection over SSL version 3.0 and TLS versions 1.0, 1.1, and 1.2 are supported. For details please refer to Java User’s Guide for Cinterion
®
ELS61-USUSA.
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GPIO
interface
I2C
USB
ASC0 lines
ASC1/SPI
CONTROL
RTC
POWER
Rx diversity
antenna
(UMTS/LTE)
Module
SIM interface
(with SIM det ection)
SIM card
Application
Power supply
Backup supply
Emergency reset
ON
Serial in terface/ SPI interface
Serial modem interface lines
I2C
GPIO
3
4
4
5
2
5
1
1
1
2
USB
Rx diversity
1
Status LED
1
DAC (PWM) PWM
2
Fast
shutdown
Fast shutdown
1
1
COUNTER
Pulse counter
1
ASC0 lines
Serial modem inte rfac e line s/ SPI interface
4
Main ante nn a
(UMTS/LTE)
Main ante nn a
1
DAI lines
4
PCM/I2 S

1.2 ELS61-USA System Overview

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1.2 ELS61-USA System Overview
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Figure 1: ELS61-USA system overview
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SD1 SD2
SD2
LDOs
PMU
LDOs
ON
Reset_BB
SD3
I2CDAT
I2CCLK
USB
GPIO
SIM
CCIN
LPDDR2
SDRAM
FLASH
VDD
VDD
ADQ0 ~ ADQ15
DDR_ CA_0~DDR _CA_9
DDR _DQ_ 0~DDR _DQ_1 5
Con trol
Con trol
CCIN
SIM
GPIO
ASC0
USB
I2C
ON circuit
ON
EMERG _RST
BATT+
BB
RX/TX
RF control
V180
Baseband
controller
and
Power
management
DAI
PCM/I2S/
GPIO
USIF1/
GPIO
FST_SHDWN
ASC1/G PIO/
SPI
USIF3
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1.3 Circuit Concept

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1.3 Circuit Concept
Figure 2 and Figure 3 show block diagrams of the ELS61-USA module and illustrate the major
functional components:
Figure 2: ELS61-USA block diagram
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LTE / UMTS RF transceiver
SKY77622
SKY13525
SKY13525
Band2
SAW Filter
Band4
SAW Filter
Band5
SAW Filter
Band12
SAW Filter
Diversity Antenna
Band2
Duplexer
Band4
Duplexer
Band5
Duplexer
Band12
Duplexer
Antenna
Coupler
B2_OUT
B4_OUT
B5_OUT
B12_OUT
4G_HB_IN
2G/3G_HB_IN
4G_LB_IN
2G/3G_LB_IN
TQ_H
TP_H
TQ_L
TP_L
RX_M1
RX_M1X
RX_H4
RX_H4X
RX_L1
RX_L1X
RX_L3
RX_L3X
4G_HB_IN
4G_HB_IN
4G_HB_IN
4G_HB_IN
TRX4
TRX6
TRX5
TRX2
TRX2
TRX1
TRX3
TRX5
PA DCDC
SKY87000
BATT+
RF
FBR_RF2
MAIN_FWD
MIPI
26MHz
RX/TX
BATT+
BB
V180
RF control
1.3 Circuit Concept
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Figure 3: ELS61-USA RF section block diagram
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Supply pads: BATT+
Control pads
GND pads
ASC0 pads
Combined GPI O/ASC1 /SPI pads
SIM pads
I2C pads
Supply pads: Ot her
Combined GPIO/Control pads (LED, PWM, COUNTER, FST_ SHDN)
USB pads
GPIO pads
21821721621521421321221121020 9208207
206
205204203202201
33
32
31
30
29
28
27
26
25
24
23
22
21
20
53
54
55
56
57
58
59
60
61
62
63
64
65
66
223224225226227228229230231232233234235236237238239240
67 68 69 70 71 72 73
74 75 76 77 78 79 80
93 94 95 96 97 98 99
100 101 102 103 104 105 106
85 86
89 90
81 82
87 88
91 92
83 84
243
244
241
242
222
221
220
219
252
245
250
251
249
248
247
246
RF antenna pad s
Do not use Not connected Reserved
Combined GPI O/ ASC0/SPI pads
ADC pad
Combined GPI O/DAI pads
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2 Interface Characteristics

59
2 Interface Characteristics
ELS61-USA is equipped with an SMT application interface that connects to the external appli­cation. The SMT application interface incorporates the various application interfaces as well as the RF antenna interface.

2.1 Application Interface

2.1.1 Pad Assignment

The SMT application interface on the ELS61-USA provides connecting pads to integrate the module into external applications. Figure 4 shows the connecting pads’ numbering plan, the following Table 1 lists the pads’ assignments.
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Figure 4: Numbering plan for connecting pads (bottom view)
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2.1 Application Interface
59
Table 1: Pad assignments
Pad no. Signal name Pad no. Signal name Pad no. Signal name
201 Not connected 24 GPIO22/FSC 235 USB_DN 202 Not connected 25 GPIO21/DIN 236 Not connected 203 GND 26 GPIO23/BCLK 237 Not connected 204 BATT+
BB
27 I2CDAT 238 GND 205 GND 28 I2CCLK 239 GPIO5/LED 206 ADC1 29 GPIO17/TXD1/MISO 240 GPIO6/PWM2 207 ON 30 GPIO16/RXD1/MOSI 241 GPIO7/PWM1 208 GND 31 GPIO18/RTS1 242 GPIO8/COUNTER 209 V180 32 GPIO19/CTS1/SPI_CS 53 BATT+
RF
210 RXD0 33 EMERG_RST 54 GND 211 CTS0 221 GPIO12 55 GND 212 TXD0 222 GPIO11 56 ANT_DRX 213 GPIO24/RING0 223 GND 57 GND 214 RTS0 224 Not connected 58 GND 215 VDDLP 225 GND 59 ANT_MAIN 216 CCRST 226 Not connected 60 GND 217 CCIN 227 GND 61 GND 218 CCIO 228 Not connected 62 GND 219 GPIO14 229 GPIO4/FST_SHDN 63 GND 220 GPIO13 230 GPIO3/DSR0/SPI_CLK 64 Not connected 20 CCVCC 231 GPIO2/DCD0 65 Not connected 21 CCCLK 232 GPIO1/DTR0 66 Not connected 22 VCORE 233 VUSB 243 Not connected 23 GPIO20/DOUT 234 USB_DP 244 GPIO15 Centrally located pads 67 Not connected 83 GND 99 GND 68 Not connected 84 GND 100 GND 69 Not connected 85 GND 101 GND 70 Not connected 86 GND 102 GND 71 Not connected 87 Not connected 103 GND 72 Not connected 88 GND 104 Not connected 73 Not connected 89 GND 105 Not connected 74 Do not use 90 GND 106 Not connected 75 Do not use 91 Not connected 245 GND 76 Not connected 92 GND 246 Not connected 77 Not connected 93 GND 247 Not connected 78 Not connected 94 GND 248 Not connected 79 Not connected 95 GND 249 Not connected 80 Not connected 96 GND 250 GND 81 GND 97 GND 251 GND 82 GND 98 GND 252 GND
Signal pads that are not used should not be connected to an external application.
Please note that the reference voltages listed in Table 2 are the values measured directly on the ELS61-USA module. They do not apply to the accessories connected.
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2.1.2 Signal Properties

Table 2: Signal properties
Function Signal name IO Signal form and level Comment
Page 17 of 113
Power supply
Power supply
BATT+ BATT+
BB
RF
I WCDMA activated:
VImax = 4.5V V
norm = 3.8V
I
V
min = 3.0V during Transmit active.
I
Imax = 900mA during Tx
LTE activated: VImax = 4.5V V
norm = 3.8V
I
V
min = 3.0V during Transmit active.
I
Lines of BATT+ and GND must be connected in parallel for supply pur­poses because higher peak currents may occur.
Minimum voltage must not fall below 3.0V includ­ing drop, ripple, spikes and not rise above 4.5V.
BATT+
and BATT+RF
BB
require an ultra low ESR capacitor: BATT+ BATT+
--> 150µF
BB
--> 150µF
RF
If using Multilayer Ceramic Chip Capacitors (MLCC) please take DC­bias into account.
Note that minimum ESR value is advised at <70m.
GND Ground Application Ground
External
V180 O Normal operation: supply voltage
VCORE O V
Ignition ON
V180 should be used to
V
norm = 1.80V ±3%
O
max = -10mA
I
O
supply level shifters at the interfaces or to supply
external application cir­SLEEP mode Operation: V
Sleep = 1.80V ±5%
O
I
max = -10mA
O
cuits.
VCORE and V180 may
be used for the power CLmax = 100µF
norm = 1.2V ±2.5%
O
I
max = -10mA
O
CLmax = 100nF
SLEEP mode Operation: V
Sleep = 0.90V...1.2V ±4%
O
I
max = -10mA
O
indication circuit.
Vcore and V180 are
sensitive against back-
powering by other sig-
nals. While switched off
these voltage domains
must have <0.2V.
If unused keep lines
open.
1
IVIHmax = 5V tolerant
V
min = 1.3V
IH
max = 0.5V
V
IL
Slew rate <
1ms
This signal switches the
module on, and is rising
edge sensitive triggered.
Internal pull down value ON ___|~~~~
for this signal is 100k.
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Table 2: Signal properties
Function Signal name IO Signal form and level Comment
Page 18 of 113
Emer-
EMERG_RST I R gency restart
RTC
VDDLP I/O V backup
USB VUSB_IN I V
USB_DN I/O Full and high speed signal characteris-
USB_DP
Serial Interface ASC0
RXD0 O V
CTS0 O
DSR0 O
DCD0 O
RING0 O
TXD0 I V
RTS0 I Pull down resistor active
DTR0 I Pull up resistor active
1k, CI 1nF
I
V
max = VDDLP max
OH
V
min = 1.35V
IH
V
max = 0.3V at ~200µA
IL
~~|___|~~ low impulse width > 10ms
norm = 1.8V ±5%
O
I
max = -25mA
O
V
max = 1.9V
I
V
min = 1.0V
I
I
typ < 1µA
I
min = 3V
I
V
max = 5.25V
I
Active and suspend current: I
< 100µA
max
tics according USB 2.0 Specification.
max = 0.25V at I = 1mA
OL
V
min = 1.55V at I = -1mA
OH
V
max = 1.85V
OH
max = 0.35V
IL
V
min = 1.30V
IH
V
max = 1.85V
IH
V
max = 0.35V at > 50µA
IL
V
min = 1.30V at < 240µA
IH
V
max = 1.85V at < 240µA
IH
V
max = 0.35V at < -200µA
IL
V
min = 1.30V at > -50µA
IH
V
max = 1.85V
IH
This line must be driven low by an open drain or open collector driver con­nected to GND.
If unused keep line open.
It is recommended to use a serial resistor between VDDLP and a possible capacitor (bigger than 1µF).
If unused keep line open.
All electrical characteris­tics according to USB Implementers' Forum, USB 2.0 Specification.
If unused keep lines open.
If unused keep lines open.
Note that some ASC0 lines are originally avail­able as GPIO lines. If configured as ASC0 lines, the GPIO lines are assigned as follows: GPIO1 --> DTR0 GPIO2 --> DCD0 GPIO3 --> DSR0 GPIO24 --> RING0
The DSR0 line is also shared with the SPI inter­face‘s SPI_CLK signal.
Note that DCD0/GPIO2 must not be driven low during startup
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Table 2: Signal properties
Function Signal name IO Signal form and level Comment
Page 19 of 113
Serial Interface ASC1
SIM card detection
3V SIM Card Inter­face
RXD1 O V
TXD1 I
RTS1 I
CTS1 O
CCIN I R
CCRST O V
CCIO I/O V
max = 0.25V at I = 1mA
OL
V
min = 1.55V at I = -1mA
OH
V
max = 1.85V
OH
V
max = 0.35V
IL
V
min = 1.30V
IH
V
max = 1.85V
IH
110k
I
V
min = 1.45V at I = 15µA,
IH
V
max= 1.9V
IH
V
max = 0.3V
IL
max = 0.30V at I = 1mA
OL
V
min = 2.45V at I = -1mA
OH
V
max = 2.90V
OH
max = 0.50V
IL
V
min = 2.05V
IH
V
max = 2.90V
IH
If unused keep line open.
Note that the ASC1 inter­face lines are originally available as GPIO lines. If configured as ASC1 lines, the GPIO lines are assigned as follows: GPIO16 --> RXD1 GPIO17 --> TXD1 GPIO18 --> RTS1 GPIO19 --> CTS1
CCIN = High, SIM card inserted.
For details please refer to
Section 2.1.6.
If unused keep line open.
Maximum cable length or copper track to SIM card holder should not exceed 100mm.
CCCLK O V
CCVCC O V
V
max = 0.25V at I = 1mA
OL
V
min = 2.50V at I = -1mA
OH
V
max = 2.90V
OH
max = 0.25V at I = 1mA
OL
V
min = 2.40V at I = -1mA
OH
V
max = 2.90V
OH
min= 2.70V
O
V
typ = 2.90V
O
V
max = 3.30V
O
I
max = -30mA
O
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Table 2: Signal properties
Function Signal name IO Signal form and level Comment
Page 20 of 113
1.8V SIM Card Inter­face
2
C I2CCLK IO Open drain IO
I
CCRST O V
CCIO I/O V
CCCLK O V
CCVCC O V
I2CDAT IO
max = 0.25V at I = 1mA
OL
V
min = 1.45V at I = -1mA
OH
V
max = 1.90V
OH
max = 0.35V
IL
V
min = 1.25V
IH
V
max = 1.85V
IH
V
max = 0.25V at I = 1mA
OL
V
min = 1.50V at I = -1mA
OH
V
max = 1.85V
OH
max = 0.25V at I = 1mA
OL
V
min = 1.50V at I = -1mA
OH
V
max = 1.85V
OH
min = 1.75V
O
V
typ = 1.80V
O
V
max = 1.85V
O
I
max = -30mA
O
V
min = 0.35V at Imax = 4mA (Imax
OL
= Imax external + I pull-up) V
max = 1.85V
OH
R external pull up min = 560
V
max = 0.35V
IL
V
min = 1.3V
IH
V
max = 1.85V
IH
Maximum cable length or copper track to SIM card holder should not exceed 100mm.
2
According to the I
C Bus Specification Version 2.1 for the fast mode a rise time of max. 300ns is per­mitted. There is also a maximum V
=0.4V at
OL
3mA specified.
The value of the pull-up depends on the capaci­tive load of the whole sys-
2
tem (I
C Slave + lines). The maximum sink cur­rent of I2CDAT and I2CCLK is 4mA.
2
I
C interface of the mod­ule already has internal 1KOhm pull up resistor to V180 inside the module. Please take this into con­sideration during applica­tion design.
If lines are unused keep lines open.
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Table 2: Signal properties
Function Signal name IO Signal form and level Comment
Page 21 of 113
SPI SPI_CLK O
MOSI O
MISO I
SPI_CS O
GPIO interface
GPIO1-GPIO3 IO
GPIO4 IO
GPIO5 IO
GPIO6 IO
GPIO7 IO
GPIO8 IO
GPIO11­GPIO15
GPIO16­GPIO19
GPIO20­GPIO23
GPIO24 IO
VOLmax = 0.25V at I = 1mA VOHmin = 1.55V at I = -1mA VOHmax = 1.85V
VILmax = 0.35V V
min = 1.30V
IH
V
max = 1.85V
IH
VOLmax = 0.25V at I = 1mA VOHmin = 1.55V at I = -1mA
max = 1.85V
V
OH
VILmax = 0.35V V
min = 1.30V
IH
V
max = 1.85V
IH
Imax = ±5mA
IO
IO
IO
If lines are unused keep lines open.
Note that the SPI inter­face lines are originally available as GPIO lines. If configured as SPI lines, the GPIO lines are assigned as follows: GPIO3 --> SPI_CLK GPIO16 --> MOSI GPIO17 --> MISO GPIO19 --> SPI_CS
If unused keep line open.
Please note that most GPIO lines can be config­ured by AT command for alternative functions: GPIO1-GPIO3: ASC0 control lines DTR0, DCD0 and DSR0 GPIO4: Fast shutdown GPIO5: Status LED line GPIO6/GPIO7: PWM GPIO8: Pulse Counter GPIO16-GPIO19: ASC1 or SPI GPIO20-GPIO23: DAI GPIO24: ASC0 control line RING0
Fast
FST_SHDN I V
shutdown
Status LED LED O
max = 0.35V
IL
V
min = 1.30V
IH
V
max = 1.85V
IH
~~|___|~~ low impulse width > 1ms
VOLmax = 0.25V at I = 1mA VOHmin = 1.55V at I = -1mA VOHmax = 1.85V
This line must be driven low. If unused keep line open.
Note that the fast shut­down line is originally available as GPIO line. If configured as fast shut­down, the GPIO line is assigned as follows: GPIO4 --> FST_SHDN
If unused keep line open.
Note that the LED line is originally available as GPIO line. If configured as LED line, the GPIO line is assigned as fol­lows: GPIO5 --> LED
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Table 2: Signal properties
Function Signal name IO Signal form and level Comment
Page 22 of 113
PWM PWM1 O
PWM2 O
Pulse
COUNTER I Internal up resistor active
counter
Digital audio inter­face (DAI)
FSC O V
BCLK O
DOUT O
DIN I V
VOLmax = 0.25V at I = 1mA VOHmin = 1.55V at I = -1mA VOHmax = 1.85V
V
max = 0.35V at < -200µA
IL
V
min = 1.30V at > -50µA
IH
V
max = 1.85V
IH
max = 0.25V at I = 1mA
OL
V
min = 1.55V at I = -1mA
OH
V
max = 1.85V
OH
max = 0.35V
IL
V
min = 1.30V
IH
V
max = 1.85V
IH
If unused keep lines open.
Note that the PWM lines are originally available as GPIO lines. If configured as PWM lines, the GPIO lines are assigned as fol­lows: GPIO7 --> PWM1 GPIO6 --> PWM2
If unused keep line open.
Note that the COUNTER line is originally available as GPIO line. If config­ured as COUNTER line, the GPIO line is assigned as follows: GPIO8 --> COUNTER
If unused keep line open.
Note that the DAI inter­face lines are originally available as GPIO lines. If configured as DAI lines, the GPIO lines are assigned as follows: GPIO22 --> FSC GPIO23 --> BCLK GPIO20 --> DOUT GPIO21 --> DIN
ADC (Analog-to­Digital Con-
ADC1 I R
= 1M
I
V
= 0V ... 1.2V (valid range)
I
V
max = 1.2V
IH
ADC can be used as input for external mea­surements.
verter)
Resolution 1024 steps
If unused keep line open.
Tolerance 0.3%
1. After the operating voltage is applied, it is required to wait at least 1 second to trigger the ON signal.
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2.1 Application Interface
59
2.1.2.1 Absolute Maximum Ratings
The absolute maximum ratings stated in Table 3 are stress ratings under any conditions. Stresses beyond any of these limits will cause permanent damage to ELS61-USA.
Table 3: Absolute maximum ratings
1
Parameter Min Max Unit
Supply voltage
BATT+
, BATT+
BB
RF
-0.5 +5.5 V
Voltage at all signal lines in Power Down mode -0.3 +0.3 V
Voltage at digital lines in normal operation -0.2 V180 + 0.2 V
Voltage at SIM/USIM interface, CCVCC in normal operation -0.5 +3.3 V
VDDLP input voltage -0.15 2.0 V
Voltage at ADC line in normal operation 0 1.2 V
V180 in normal operation +1.7 +1.9 V
Current at V180 in normal operation -0 +50 mA
VCORE in normal operation +0.85 +1.25 V
Current at VCORE in normal operation -0 +50 mA
Voltage at ON signal -0.5 +6.5 V
Current at single GPIO -5 +5 mA
Current at all GPIO -50 +50 mA
Voltage at VCORE, V180 in power down mode -0.2 +0.2 V
1. Positive noted current means current sourcing from ELS61-USA. Negative noted current means current sourcing towards ELS61-USA.
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VBUS
DP DN
VREG (3V075)
BATT+
USB_DP
2)
lin. reg.
GND
Module
Detection only
VUSB_IN
USB part
1)
RING0
Host wakeup
1)
All serial (including RS) and pull-up resistors for data lines are implemented.
USB_DN
2)
2)
If the USB interface is operated in High Speed mode (480MHz), it is recommended to take special care routing the data lines USB_DP and USB_DN. Application layout should in this case implement a differential impedance of 90 ohms for proper signal integrity.
R
S
R
S
SMT
Page 24 of 113
2.1 Application Interface
59

2.1.3 USB Interface

ELS61-USA supports a USB 2.0 High Speed (480Mbit/s) device interface that is Full Speed (12Mbit/s) compliant. The USB interface is primarily intended for use as command and data in­terface and for downloading firmware.
The external application is responsible for supplying the VUSB_IN line. This line is used for ca­ble detection only. The USB part (driver and transceiver) is supplied by means of BATT+. This is because ELS61-USA is designed as a self-powered device compliant with the “Universal Se­rial Bus Specification Revision 2.0”
1
.
Figure 5: USB circuit
To properly connect the module's USB interface to the external application, a USB 2.0 compat­ible connector and cable or hardware design is required. For more information on the USB re­lated signals see Table 2. Furthermore, the USB modem driver distributed with ELS61-USA needs to be installed.
1. The specification is ready for download on http://www.usb.org/developers/docs/
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Page 25 of 113
2.1.3.1 Reducing Power Consumption
While a USB connection is active, the module will never switch into SLEEP mode. Only if the USB interface is in Suspended state or Detached (i.e., VUSB_IN = 0) is the module able to switch into SLEEP mode thereby saving power. There are two possibilities to enable power re­duction mechanisms:
Recommended implementation of USB Suspend/Resume/Remote Wakeup:
The USB host should be able to bring its USB interface into the Suspended state as described in the “Universal Serial Bus Specification Revision 2.0“ work, the VUSB_IN line should always be kept enabled. On incoming calls and other events ELS61-USA will then generate a Remote Wakeup request to resume the USB host control­ler.
See also [5] (USB Specification Revision 2.0, Section 10.2.7, p.282): "If USB System wishes to place the bus in the Suspended state, it commands the Host Con­troller to stop all bus traffic, including SOFs. This causes all USB devices to enter the Sus­pended state. In this state, the USB System may enable the Host Controller to respond to bus wakeup events. This allows the Host Controller to respond to bus wakeup signaling to restart the host system."
1
. For this functionality to
Implementation for legacy USB applications not supporting USB Suspend/Resume:
As an alternative to the regular USB suspend and resume mechanism it is possible to employ the RING0 line to wake up the host application in case of incoming calls or events signalized by URCs while the USB interface is in Detached state (i.e., VUSB_IN = 0). Every wakeup event will force a new USB enumeration. Therefore, the external application has to carefully consider the enumeration timings to avoid loosing any signalled events. For details on this host wakeup functionality see Section 2.1.14.3. To prevent existing data call con­nections from being disconnected while the USB interface is in detached state (i.e., VUS­B_IN=0) it is possible to call AT&D0, thus ignoring the status of the DTR line (see also [1]).
1. The specification is ready for download on http://www.usb.org/developers/docs/
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Page 26 of 113

2.1.4 Serial Interface ASC0

ELS61-USA offers an 8-wire unbalanced, asynchronous modem interface ASC0 conforming to ITU-T V.24 protocol DCE signalling. The electrical characteristics do not comply with ITU-T V.28. The significant levels are 0V (for low data bit or active state) and 1.8V (for high data bit or inactive state). For electrical characteristics please refer to Table 2. For an illustration of the interface line’s startup behavior see Figure 7.
ELS61-USA is designed for use as a DCE. Based on the conventions for DCE-DTE connec­tions it communicates with the customer application (DTE) using the following signals:
Port TXD @ application sends data to the module’s TXD0 signal line
Port RXD @ application receives data from the module’s RXD0 signal line
Figure 6: Serial interface ASC0
Features:
Includes the data lines TXD0 and RXD0, the status lines RTS0 and CTS0 and, in addition, the modem control lines DTR0, DSR0, DCD0 and RING0.
The RING0 signal serves to indicate incoming calls and other types of URCs (Unsolicited Result Code). It can also be used to send pulses to the host application, for example to wake up the application from power saving state.
Configured for 8 data bits, no parity and 1 stop bit.
ASC0 can be operated at fixed bit rates from 1,200bps up to 921,600bps.
Autobauding supports bit rates from 1,200bps up to 230,400bps.
Supports RTS0/CTS0 hardware flow control. The hardware hand shake line RTS0 has an internal pull down resistor causing a low level signal, if the line is not used and open. Although hardware flow control is recommended, this allows communication by using only RXD and TXD lines.
Wake up from SLEEP mode by RTS0 activation (high to low transition; see Section 3.3.2).
Note: The ASC0 modem control lines DTR0, DCD0, DSR0 and RING0 are originally available as GPIO lines. If configured as ASC0 lines, these GPIO lines are assigned as follows: GPIO1 --> DTR0, GPIO2 --> DCD0, GPIO3 --> DSR0 and GPIO24 --> RING0. Also, DSR0 is shared with the SPI_CLK line of the SPI interface and may be configured as such. Configura­tion is done by AT command (see [1]). The configuration is non-volatile and becomes active after a module restart.
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TXD0
RXD0
RTS0
CTS0
DTR0/GPIO1
DSR0/GPIO3
DCD0/GPIO2
RING0/GPIO24
ON
EMERG_RST
PU
PD
PD
PD
PD
PU
PD
PU
Power supply active
Start up
Firmware
initialization
Command interface
initialization
Interface
active
Reset
state
V180
VCORE
PD
PU
PU
PU
PD
PD
PD
Page 27 of 113
2.1 Application Interface
59
The following figure shows the startup behavior of the asynchronous serial interface ASC0.
For pull-up and pull-down values see Table 13.
Figure 7: ASC0 startup behavior
Notes: During startup the DTR0 signal is driven active low for 500µs. It is recommended to provide a 470
serial resistor for the DTR0 line to prevent shorts (high current flow).
No data must be sent over the ASC0 interface before the interface is active and ready to re­ceive data (see Section 3.2.1).
An external pull down to ground on the DCD0 line during the startup phase activates a special mode for ELS61-USA. In this special mode the AT command interface is not available and the module may therefore no longer behave as expected.
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Page 28 of 113

2.1.5 Serial Interface ASC1

Four ELS61-USA GPIO lines can be configured as ASC1 interface signals to provide a 4-wire unbalanced, asynchronous modem interface ASC1 conforming to ITU-T V.24 protocol DCE signalling. The electrical characteristics do not comply with ITU-T V.28. The significant levels are 0V (for low data bit or active state) and 1.8V (for high data bit or inactive state). For electrical characteristics please refer to Table 2. For an illustration of the interface line’s startup behavior see Figure 9.
The ASC1 interface lines are originally available as GPIO lines. If configured as ASC1 lines, the GPIO lines are assigned as follows: GPIO16 --> RXD1, GPIO17 --> TXD1, GPIO18 --> RTS1 and GPIO19 --> CTS1. Configuration is done by AT command (see [1]: AT^SCFG). The configuration is non-volatile and becomes active after a module restart.
ELS61-USA is designed for use as a DCE. Based on the conventions for DCE-DTE connec­tions it communicates with the customer application (DTE) using the following signals:
Port TXD @ application sends data to module’s TXD1 signal line
Port RXD @ application receives data from the module’s RXD1 signal line
Figure 8: Serial interface ASC1
Features
Includes only the data lines TXD1 and RXD1 plus RTS1 and CTS1 for hardware hand­shake.
On ASC1 no RING line is available.
Configured for 8 data bits, no parity and 1 or 2 stop bits.
ASC1 can be operated at fixed bit rates from 1,200 bps to 921,600 bps.
Autobauding supports bit rates from 1,200bps up to 230,400bps.
Supports RTS1/CTS1 hardware flow. The hardware hand shake line RTS0 has an internal pull down resistor causing a low level signal, if the line is not used and open. Although hard­ware flow control is recommended, this allows communication by using only RXD and TXD lines.
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TXD1/GPIO17
RXD1/GPIO16
RTS1/GPIO18
CTS1/GPIO19
ON
EMERG_RST
PD
PD
PD
PD
Power supply active
Start up
Firmware
initialization
Command interface
initialization
Interface
active
Reset
state
V180
VCORE
PD
2.1 Application Interface
59
Page 29 of 113
The following figure shows the startup behavior of the asynchronous serial interface ASC1.
*) For pull-down values see Table 13.
Figure 9: ASC1 startup behavior
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Page 30 of 113

2.1.6 UICC/SIM/USIM Interface

ELS61-USA has an integrated UICC/SIM/USIM interface compatible with the 3GPP 31.102 and ETSI 102 221. This is wired to the host interface in order to be connected to an external SIM card holder. Five pads on the SMT application interface are reserved for the SIM interface.
The UICC/SIM/USIM interface supports 3V and 1.8V SIM cards. Please refer to Table 2 for electrical specifications of the UICC/SIM/USIM interface lines depending on whether a 3V or
1.8V SIM card is used.
The CCIN signal serves to detect whether a tray (with SIM card) is present in the card holder. To take advantage of this feature, an appropriate SIM card detect switch is required on the card holder. For example, this is true for the model supplied by Molex, which has been tested to op­erate with ELS61-USA and is part of the Gemalto M2M reference equipment submitted for type approval. See Section 7.1 for Molex ordering numbers.
Table 4: Signals of the SIM interface (SMT application interface)
Signal Description
GND Separate ground connection for SIM card to improve EMC.
CCCLK Chipcard clock
CCVCC SIM supply voltage.
CCIO Serial data line, input and output.
CCRST Chipcard reset
CCIN Input on the baseband processor for detecting a SIM card tray in the holder. If the SIM is
removed during operation the SIM interface is shut down immediately to prevent destruc­tion of the SIM. The CCIN signal is by default low and will change to high level if a SIM card is inserted. The CCIN signal is mandatory for applications that allow the user to remove the SIM card during operation. The CCIN signal is solely intended for use with a SIM card. It must not be used for any other purposes. Failure to comply with this requirement may invalidate the type approval of ELS61-USA.
Note [1]: No guarantee can be given, nor any liability accepted, if loss of data is encountered after removing
the SIM card during operation. Also, no guarantee can be given for properly initializing any SIM card that the user inserts after having removed the SIM card during operation. In this case, the application must restart ELS61-USA.
Note [2]: On the evaluation board, the CCIN signal is inverted, thus the CCIN signal is by default high and
will change to a low level if a SIM card is inserted.
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SIM
CCVCC
CCRST
CCIO
CCCLK
220nF
1nF
CCIN
V180
2.1 Application Interface
59
The figure below shows a circuit to connect an external SIM card holder.
Page 31 of 113
Figure 10: External UICC/SIM/USIM card holder circuit
The total cable length between the SMT application interface pads on ELS61-USA and the pads of the external SIM card holder must not exceed 100mm in order to meet the specifica­tions of 3GPP TS 51.010-1 and to satisfy the requirements of EMC compliance.
To avoid possible cross-talk from the CCCLK signal to the CCIO signal be careful that both lines are not placed closely next to each other. A useful approach is using a GND line to shield the CCIO line from the CCCLK line.
An example for an optimized ESD protection for the SIM interface is shown in Section 2.1.6.1.
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CCRST
CCCLK
CCIO
CCVCC
CCIN
GND
123
654
SIM_RST
SIM_CLK
SIM_IO
SIM_VCC
SIM_DET
Module
2.1 Application Interface
59
2.1.6.1 Enhanced ESD Protection for SIM Interface
Page 32 of 113
To optimize ESD protection for the SIM interface it is possible to add ESD diodes to the SIM interface lines as shown in the example given in Figure 11.
1
The example was designed to meet ESD protection according ETSI EN 301 489-1/7: Contact discharge: ± 4kV, air discharge: ± 8kV.
Figure 11: SIM interface - enhanced ESD protection
1. Note that the protection diode shall have low internal capacitance less than 5pF for IO and CLK.
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59
Page 33 of 113

2.1.7 Digital Audio Interface (DAI)

ELS61-USA supports a digital audio interface that can be employed either as pulse code mod­ulation interface (see Section 2.1.7.1) or as inter IC sound interface (see Section 2.1.7.2). Op­eration of these interface variants is mutually exclusive, and can be configured by AT command (AT^SAIC; see [1]).
2.1.7.1 Pulse Code Modulation Interface (PCM)
Four ELS61-USA GPIO lines can be configured as pule code modulation interface (PCM). The PCM functionality allows for the use of an external codec like the W681360 (see Section
2.1.7.3).
The PCM interface supports the following features:
Master and Slave mode
Long frame and short frame
8kHz sample rate / 125µs frame duration (narrow band), 16kHz sample rate / 62.5µs frame duration (wide band)
Bit clock: 256kHz (sample rate of 8kHz), 264kHz (short frame), 520kHz (sample rate of 8kHz), 528kHz (short frame), 1040kHz (sample rate of 16kHz)
The most significant bit MSB is transferred first
Data write at rising edge / data read at falling edge
Common frame sync signal for transmit and receive
The four GPIO lines can be configured as DAI/PCM interface signals as follows: GPIO20 --> DOUT, GPIO21--> DIN, GPIO22 --> FSC and GPIO23 --> BCLK. The configuration is done by AT command (see [1]). It is non-volatile and becomes active after a module restart. Table 5 de­scribes the available DAI/PCM lines at the digital audio interface. For electrical details see Sec-
tion 2.1.2.
Table 5: Overview of DAI/PCM lines
Signal name Input/Output Description
DOUT O PCM data from
DIN I PCM data from external codec to
FSC O
BCLK O Bit clock to external codec.
Frame synchronization signal to external codec: Long frame (8kHz)
ELS61-USA to external codec.
ELS61-USA.
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BCLK
DOUT
DIN
FSC
MSB
MSB
LSB
LSB
14 13
14
13
1
1
12
12
2
2
MSB
MSB
125 µs
DIN/GPIO21
FSC/GPIO22
BCLK/GPIO23
DOUT/GPIO20
PD
PD
PD
PD
CTS0
ON
EMERG_RST
Power supply active
Start up
Firmware
initialization
Command interface
initialization
Interface
active
Reset
state
V180
VCORE
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2.1 Application Interface
59
Figure 12 shows the PCM timing for the master mode available with ELS61-USA.
Figure 12: Long frame PCM timing, 256kHz
The following figure shows the start up behavior of the DAI interface. The start up configuration of functions will be activated after the software initialization of the command interface. With an active state of CTS0 (low level) the initialization of the DAI interface is finished.
Figure 13: DAI startup timing
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BCLK
DOUT
DIN
FSC
MSB
MSB
LSB
LSB
14 13
14 13
1
1
12
12
2
2
MSB
MSB
125 µs
2.1 Application Interface
59
2.1.7.2 Inter IC Sound Interface
Page 35 of 113
The Inter IC Sound interface (I2S) is enabled using the AT command AT^SAIC (see [1]). An
2
activation is possible only out of call and out of tone presentation. The I
2
capabilities comply with the requirements laid out in the Phillips I
S Bus Specifications,
S properties and
revised June 5, 1996.
2
The I
S interface has the following characteristics:
Clock Modes: Master with permanent clock option
Sampling Rate: 8kHz (narrow band), 16kHz (wide band)
Bit clock: 512kHz
The digital audio interface pads available for the PCM interface are also available for the I interface. In I
2
S mode they have the same electrical characteristics (for more information on the
2
DOUT, DIN, FSC and BCLK pads please refer to Section 2.1.2 and Section 2.1.7.1).
The table below lists the available pads at the module’s digital audio interface.
Table 6: Overview of DAI/I
Signal name Input/Output Description
DOUT O I
DIN I I
FSC O Frame synchronization signal to external codec:
2
S lines
2
S data from module to external codec.
2
S data from external codec to module.
Word alignment (WS)
S
BCLK O Bit clock to external codec: 512kHz
2
The following figure shows the I
S timing for the master mode available with the module.
Figure 14: I
2
S timing, 8kHz sample rate
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W681360
13-Bit-Linear-
CODEC
PCM to Analog Converter
Module
DIN
DOUT
FSC
BCLK
+3.0V
+3.0V
BCLK
DOUT
FSC
DIN
R5 1k
R6
1k
R9 100k
Mic1
MICRO PHONE
1
2
+
C6
100uF
C3 10nF
C2
100nF
R8 100kR7 20 k
C1
100nF
U1
W681360
15
6
5
8
1
4
9
10
2 3
19 18 17
16
14
13
12
11
7
20
VSS
VDD
PO+
DR
VAGREF
PO-
BCLKR
PDI
RO-
PI
TI+
TI­TG
HB
FST
DT
BCLKT
MCLK
FSR
VAG
R1 75 k
R2 75 k
C7 420pF
C8 420 pF
R4 1k
R3 1k
C4 100nF
C5 100nF
LS1
SPEAKER
Speaker gain
Low lev el input
+3.0V
Module
Output lines:
FSC
BCLK
DOUT
Input line:
DIN
5V tolerant
V180
VCC
VCC
74V HC1GT50
74LV C1G34
Page 36 of 113
2.1 Application Interface
59
2.1.7.3 Solutions for the Digital Audio Interface
Figure 15 and Figure 16 show an example of using the digital audio interface of the module.
The below mentioned sample Nuvoton codec W681360 can be replaced with a DSP. In the ex­ample, framesync and clock master is the module (FSC line) and thus the RF network.
Figure 15: Block circuit for DAI to analog converter
This DAI analog converter is well suited for evaluating and testing a telephone handset and can be used instead of the headset interface of the DSB75.
Figure 16: Sample circuit for analog to DAI box
On the module side, the DAI interface has to be enabled. This can be done by using the follow­ing AT command: AT^SCFG="GPIO/mode/DAI","std".
Please note that level converters are required between the module‘s 1.8V digital audio lines and the 3.0V audio codec interface lines. Possible level converters are for example 74VHC1GT50 (up) and 74LVC1G34 (down). See Figure 16 and refer to Section 2.3.1 for more information on a possible sample level conversion circuit.
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Signal Processing /
Speech coder
+
AT parameters are given in brackets <...>
and marked red and italic.
<outVolStep>
<inVolStep>
Speech decoder / Signal Processing
DAI
4
PCM/I
2
S
<sideToneGain>
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2.1 Application Interface
59
2.1.7.4 Electrical Characteristics of the Voiceband Part
Setting Audio Parameters by AT Commands
The audio modes 2 to 10 can be temporarily adjusted according to the AT command parameter listed in the table below. The audio parameter is set with the AT commandAT^SNFO and the audio mode is changed by AT^SNFS (see [1]). For a model of how the parameters influence the audio signal path see Section .
Table 7: Audio parameters adjustable by AT command
Parameter Influence to Range Gain range Calculation AT^SNFI
inVolStep Digital TX volume 0
1...100
Mute
-43.5…+6dB
0.5dB steps (inVolStep-88)*0.5dB 88 = 0dB (default)
AT^SNFO
outVolStep Digital RX volume 0
1…100
Mute
-43.5…+6dB
0.5dB steps (outVolStep-88)*0.5dB 88 = 0dB (default)
sideToneStep Sidetone gain
1. The sidetone path contains two logically gain cells in series as shown in Figure 17. The first one can be controlled by the parameter sideToneGain while the second one will be controlled by outVolStep to keep the resulting sidetone gain constant independently of the RX Volume. The second cell introduces an off­set of -37.5dB to the sidetone path. The resulting sidetone gain can be calculated according the following formula: Resulting sidetone gain = 0.5 * (sideToneStep - outVolStep) -37.5 [dB]
If sideToneStep = 0 the sidetone path is completely muted - independent of outVolStep.
1
0
0...175
Mute
-43.5...
43.5dB
0.5dB steps SideToneStep*0.5dB 88 = 0dB
Audio Programming Model
The audio programming model shows how the signal path can be influenced by varying AT command parameters: . For more information on the AT commands and parameters see Sec-
tion and [1].
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Figure 17: Audio programming model
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Page 38 of 113
Characteristics of Audio Modes
The electrical characteristics of the voiceband part depend on the current audio mode set with AT command. All values are noted for default gains, e.g. the default parameters are left unchanged.
Note: With regard to acoustic shock, the cellular application must be designed to avoid sending false AT commands that might increase amplification, e.g. for a highly sensitive earpiece. A protection circuit should be implemented in the cellular application.
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Capacitor
VDDLP
Processor and power
management
LRTC
RTC
Application interface
BATT+
Module
1k
GND
2.1 Application Interface
59
Page 39 of 113

2.1.8 RTC Backup

The internal Real Time Clock of ELS61-USA is supplied from a separate voltage regulator in the power supply component which is also active when ELS61-USA is in Power Down mode and BATT+ is available. An alarm function is provided that allows to wake up ELS61-USA with­out logging on to the RF network.
In addition, you can use the VDDLP pad to backup the RTC from an external capacitor. The capacitor is charged from the internal LDO of ELS61-USA. If the voltage supply at BATT+ is disconnected the RTC can be powered by the capacitor. The size of the capacitor determines the duration of buffering when no voltage is applied to ELS61-USA, i.e. the greater the capac­itor the longer ELS61-USA will save the date and time. The RTC can also be supplied from an external battery (rechargeable or non-chargeable). In this case the electrical specification of the VDDLP pad (see Section 2.1.2) has to be taken in to account.
Figure 18 shows an RTC backup configuration. A serial 1k
resistor has to be placed on the
application next to VDDLP. It limits the input current of an empty capacitor or battery.
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Figure 18: RTC supply variants
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2.1 Application Interface
59

2.1.9 GPIO Interface

ELS61-USA offers a GPIO interface with 22 GPIO lines. The GPIO lines are shared with other interfaces or functions: Fast shutdown (see Section 2.1.14.4), status LED (see Section
2.1.14.1), the PWM functionality (see Section 2.1.12), an pulse counter (see Section 2.1.13),
ASC0 (see Section 2.1.4), ASC1 (see Section 2.1.5), an SPI interface (see Section 2.1.11), and a DAI interface (see Section 2.1.7).
The following table shows the configuration variants for the GPIO pads. All variants are mutu­ally exclusive, i.e. a pad configured for instance as Status LED is locked for alternative usage.
Table 8: GPIO lines and possible alternative assignment
GPIO Fast
Shutdown
GPIO1 DTR0
GPIO2 DCD0
GPIO3 DSR0 SPI_CLK
GPIO4 FST_SHDN
GPIO5 Status LED
GPIO6 PWM2
GPIO7 PWM1
GPIO8 COUNTER
GPIO11
GPIO12
GPIO13
GPIO14
GPIO15
GPIO16 RXD1 MOSI
GPIO17 TXD1 MISO
GPIO18 RTS1
GPIO19 CTS1 SPI_CS
Status LED PWM Pulse
Counter
ASC0 ASC1 SPI DAI
GPIO20 DOUT
GPIO21 DIN
GPIO22 FSC
GPIO23 BCLK
GPIO24 RING0
After startup, the above mentioned alternative GPIO line assignments can be configured using AT commands (see [1]). The configuration is non-volatile and available after module restart.
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GPIO 1-8
PD
CTS0
ON
EMERG_RST
Power supply active
Start up
Firmware
initialization
Command interface
initialization
Interface
active
Reset
state
V180
VCORE
GPIO 11 - 24
PD
2.1 Application Interface
59
Page 41 of 113
The following figure shows the startup behavior of the GPIO interface. With an active state of the ASC0 interface (i.e. CTS0 is at low level) the initialization of the GPIO interface lines is also finished.
*) For pull down values see Table 13.
Figure 19: GPIO startup behavior
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I2CCLK
I2CDAT
GND
I2CCLK
I2CDAT
GND
Module Application
V180
R pull up
R pull up
R pull up
R pull up
1KOhm
1KOhm
Page 42 of 113
2.1 Application Interface
59

2.1.10 I2C Interface

I2C is a serial, 8-bit oriented data transfer bus for bit rates up to 400kbps in Fast mode. It con­sists of two lines, the serial data line I2CDAT and the serial clock line I2CCLK. The module acts as a single master device, e.g. the clock I2CCLK is driven by the module. I2CDAT is a bi-direc­tional line. Each device connected to the bus is software addressable by a unique 7-bit ad­dress, and simple master/slave relationships exist at all times. The module operates as master­transmitter or as master-receiver. The customer application transmits or receives data only on request of the module.
To configure and activate the I2C bus use the AT^SSPI command. Detailed information on the AT^SSPI command as well explanations on the protocol and syntax required for data transmis­sion can be found in [1].
2
The I
C interface can be powered via the V180 line of ELS61-USA. If connected to the V180
line, the I
In the application I2CDAT and I2CCLK lines need to be connected to a positive supply voltage via a pull-up resistor. For electrical characteristics please refer to Table 2.
2
C interface will properly shut down when the module enters the Power Down mode.
Figure 20: I
Note: Good care should be taken when creating the PCB layout of the host application: The traces of I2CCLK and I2CDAT should be equal in length and as short as possible.
2
C interface connected to V180
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I2CCLK
I2CDAT
Open Drain
Open Drain
(external pull up)
(external pull up)
CTSx
ON
EMERG_RST
Power supply active
Start up
Firmware
initialization
Command interface
initialization
Interface
active
Reset
state
V180
VCORE
2.1 Application Interface
59
Page 43 of 113
The following figure shows the startup behavior of the I2C interface. With an active state of the ASC0 interface (i.e. CTS0 is at low level) the initialization of the I
2
C interface is also finished.
Figure 21: I
2
C startup behavior
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SPI MODE 0 SPI MODE 1
SPI MODE 2 SPI MODE 3
Clock phase
Clock polarity
SPI_CS
MOSI
SPI_CLK
MISO
SPI_CS
MOSI
SPI_CLK
MISO
SPI_CS
MOSI
SPI_CLK
MISO
SPI_CS
MOSI
SPI_CLK
MISO
Sample Sample
Sample Sample
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2.1 Application Interface
59

2.1.11 SPI Interface

Four ELS61-USA GPIO interface lines can be configured as Serial Peripheral Interface (SPI). The SPI is a synchronous serial interface for control and data transfer between ELS61-USA and the external application. Only one application can be connected to the SPI and the inter­face supports only master mode. The transmission rates are up to 6.5Mbit/s. The SPI interface comprises the two data lines MOSI and MISO, the clock line SPI_CLK a well as the chip select line SPI_CS.
The four GPIO lines can be configured as SPI interface signals as follows: GPIO3 --> SPI_CLK, GPIO16 --> MOSI, GPIO17 --> MISO and GPIO19 --> SPI_CS. The configuration is done by AT command (see [1]). It is non-volatile and becomes active after a module restart.
The GPIO lines are also shared with the ASC1 signal lines and the ASC0 modem status signal line DSR0.
To configure and activate the SPI interface use the AT^SSPI command. Detailed information on the AT^SSPI command as well explanations on the SPI modes required for data transmis­sion can be found in [1].
In general, SPI supports four operation modes. The modes are different in clock phase and clock polarity. The module’s SPI mode can be configured by using the AT command AT^SSPI. Make sure the module and the connected slave device works with the same SPI mode.
Figure 22 shows the characteristics of the four SPI modes. The SPI modes 0 and 3 are the most
common used modes. For electrical characteristics please refer to Table 2.
Figure 22: Characteristics of SPI modes
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VCC
GPIO5/
LED
LED
GNDGND
R1
R2
R3
2.1 Application Interface
59
Page 45 of 113

2.1.12 PWM Interfaces

The GPIO6 and GPIO7 interface lines can be configured as Pulse Width Modulation interface lines PWM1 and PWM2. The PWM interface lines can be used, for example, to connect buzz­ers. The PWM1 line is shared with GPIO7 and the PWM2 line is shared with GPIO6 (for GPIOs see Section 2.1.9). GPIO and PWM functionality are mutually exclusive.
The startup behavior of the lines is shown in Figure 19.

2.1.13 Pulse Counter

The GPIO8 line can be configured as pulse counter line COUNTER. The pulse counter inter­face can be used, for example, as a clock (for GPIOs see Section 2.1.9).

2.1.14 Control Signals

2.1.14.1 Status LED
The GPIO5 interface line can be configured to drive a status LED that indicates different oper­ating modes of the module (for GPIOs see Section 2.1.9). GPIO and LED functionality are mu- tually exclusive.
To take advantage of this function connect an LED to the GPIO5/LED line as shown in Figure
23.
Figure 23: Status signaling with LED driver
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22k
10k
100k
100k
4.7k
V180
VCORE
Power
indication
External
power supply
2.1 Application Interface
59
Page 46 of 113
2.1.14.2 Power Indication Circuit
In Power Down mode the maximum voltage at any digital or analog interface line must not ex­ceed +0.3V (see also Section 2.1.2.1). Exceeding this limit for any length of time might cause permanent damage to the module.
It is therefore recommended to implement a power indication signal that reports the module’s power state and shows whether it is active or in Power Down mode. While the module is in Power Down mode all signals with a high level from an external application need to be set to low state or high impedance state. The sample power indication circuit illustrated in Figure 24 denotes the module’s active state with a low signal and the module’s Power Down mode with a high signal or high impedance state.
Figure 24: Power indication circuit
2.1.14.3 Host Wakeup
If no call, data or message transfer is in progress, the host may shut down its own USB inter­face to save power. If a call or other request (URC’s, messages) arrives, the host can be noti­fied of these events and be woken up again by a state transition of the ASC0 interface‘s RING0 line. This functionality should only be used with legacy USB applications not supporting the rec­ommended USB suspend and resume mechanism as described in [5] (see also Section 2.1.3.1). For more information on how to configure the RING0 line by AT^SCFG command see [1].
Possible RING0 line states are listed in Table 9.
Table 9: Host wakeup lines
Signal I/O Description
RING0 O Inactive to active low transition:
0 = The host shall wake up 1 = No wake up request
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BATT+
VCORE
V180
VDDLP
Fast shut down procedure Power down
EMERG_RST
ON
GPIO4/FST_SHDN
<15ms_
2.1 Application Interface
59
Page 47 of 113
2.1.14.4 Fast Shutdown
The GPIO4 interface line can be configured as fast shutdown signal line FST_SHDN. The con­figured FST_SHDN line is an active low control signal and must be applied for at least 1 milli­seconds. If unused this line can be left open because of a configured internal pull-up resistor. Before setting the FST_SHDN line to low, the ON signal should be set to low (see Figure 25). Otherwise there might be back powering at the ON line in Power Down mode.
The fast shutdown feature can be triggered using the AT command AT^SMSO=<fso>. For de­tails see [1].
If triggered, a low impulse >1 milliseconds on the FST_SHDN line starts the fast shutdown. The fast shutdown procedure still finishes any data activities on the module's flash file system, thus ensuring data integrity, but will no longer deregister gracefully from the network, thus saving the time required for network deregistration.
Please note that the normal software controlled shutdown using AT^SMSO will allow option for a fast shutdown by parameter <fso>, i.e., without network deregistration. However, in this case no URCs including shutdown URCs will be provided by the AT^SMSO command.
Please also note that the fast shutdown operation does not allow the module deregister from the network, therefore, this practice is not recommended, and should not be conducted on reg­ular basis. If it is used for energy saving reason, for instance, used in battery-driven solutions that require prompt system shutdown before battery depletion, discretion is advised in such case.
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Figure 25: Fast shutdown timing
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2.2 RF Antenna Interface

59
2.2 RF Antenna Interface
Page 48 of 113
The ELS61-USA UMTS/LTE antenna interface comprises a UMTS/LTE main antenna as well as a UMTS/LTE Rx diversity antenna to improve signal reliability and quality has an impedance of 50
. ELS61-USA is capable of sustaining a total mismatch at the antenna
1
. The RF interface
line without any damage, even when transmitting at maximum RF power.
The external antenna must be matched properly to achieve best performance regarding radi­ated power, modulation accuracy and harmonic suppression. Antenna matching networks are not included on the ELS61-USA module and should be placed in the host application if the an­tenna does not have an impedance of 50
.
Regarding the return loss ELS61-USA provides the following values in the active band:
Table 10: Return loss in the active band
State of module Return loss of module Recommended return loss of application
Receive >
Transmit not applicable >
8dB > 12dB
12dB

2.2.1 Antenna Interface Specifications

For approval reasons it is mandatory to connect/apply the Rx diversity antenna to an existing antenna. Not connecting/applying the Rx diversity antenna does not necessarily impact the performance, but may result in approval failures. The minimum antenna efficiency should be better than 50%.
Table 11: RF Antenna interface UMTS/LTE (at operating temperature range
Parameter Conditions Min. Typical Max. Unit
LTE connectivity
Receiver Input Sensitivity @ ARP (Dual Antenna; ch. bandwidth 5MHz)
2
Band 2, 4, 5,12
LTE 700 Band 12 (ch. band­width 5MHz)
LTE 850 Band 5 (ch. band­width 10MHz)
LTE AWS Band 4 (ch. band­width 10MHz)
LTE 1900 Band 2 (ch. band­width 10MHz)
-97 -103.5 dBm
-98 -104.5 dBm
-100 -103 dBm
-98 -102.5 dBm
1
)
1. By delivery default the UMTS/LTE Rx diversity antenna is configured as available for the module since its usage is mandatory for LTE. Please refer to [1] for details on how to configure antenna settings.
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59
Page 49 of 113
Table 11: RF Antenna interface UMTS/LTE (at operating temperature range
1
)
Parameter Conditions Min. Typical Max. Unit
RF Power @ ARP with 50 Load (Board temperature < 85°C, BW:5MHz RB:25 (DL), 1 (UL) QPSK)
LTE 700 Band 12 (ch. band­width 5MHz; 1RB, position low)
LTE 850 Band 5 (ch. band­width 5MHz; 1RB, position
+21 +23 dBm
+21 +23 dBm
low)
LTE AWS Band 4 (ch. band-
+21 +23 dBm width 5MHz; 1RB, position low)
LTE 1900 Band 2 (ch. band-
+21 +23 dBm width 5MHz; 1RB, position low)
UMTS/HSPA connectivity
Receiver Input Sensitivity @ ARP
2
Band II, IV, V
UMTS 850 Band V -104.7 -110 dBm
UMTS AWS Band IV -106.7 -108.5 dBm
UMTS 1900 Band II -104.7 -110 dBm
RF Power @ ARP with 50 Load (Board temperature < 85°C)
UMTS 850 Band V +21 +23.5 dBm
UMTS AWS Band IV +21 +23.5 dBm
UMTS 1900 Band II +21 +23.5 dBm
1. No active power reduction is implemented - any deviations are hardware related.
2. Applies also to UMTS/LTE Rx diversity antenna.
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GND
GND
ANT_MAIN
GND
ANT_DRX
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2.2 RF Antenna Interface
59

2.2.2 Antenna Installation

The antenna is connected by soldering the antenna pad (ANT_MAIN or ANT_DRX) and its neighboring ground pads (GND) directly to the application’s PCB. The antenna pads are the antenna reference points (ARP) for ELS61-USA. All RF data specified throughout this docu­ment is related to the ARP.
Figure 26: Antenna pads (bottom view)
The distance between the antenna pad and its neighboring GND pads has been optimized for best possible impedance. To prevent mismatch, special attention should be paid to these pads on the application‘s PCB.
The wiring of the antenna connection, starting from the antenna pad to the application‘s anten­na should result in a 50 be optimized with regard to the PCB’s layer stack. Some examples are given in Section 2.2.3.
line impedance. Line width and distance to the GND plane needs to
To prevent receiver desensitization due to interferences generated by fast transients like high speed clocks on the external application PCB, it is recommended to realize the antenna con­nection line using embedded Stripline rather than Micro-Stripline technology. Please see Sec-
tion 2.2.3.1 for examples of how to design the antenna connection in order to achieve the
required 50
For type approval purposes, the use of a 50
line impedance.
be necessary. In this case the U.FL-R-SMT connector should be placed as close as possible to ELS61-USA‘s antenna pad.
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2.2.3 RF Line Routing Design

2.2.3.1 Line Arrangement Examples
Several dedicated tools are available to calculate line arrangements for specific applications and PCB materials - for example from http://www.polarinstruments.com/ (commercial software) or from http://web.awrcorp.com/Usa/Products/Optional-Products/TX-Line/ (free software).
Embedded Stripline
This figure below shows a line arrangement example for embedded stripline with 65µm FR4 prepreg (type: 1080) and 710µm FR4 core (4-layer PCB).
Figure 27: Embedded Stripline with 65µm prepreg (1080) and 710µm core
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Antenna line
Ground line
Ground line
Application board
2.2 RF Antenna Interface
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Micro-Stripline
This section gives two line arrangement examples for micro-stripline.
Micro-Stripline on 1.0mm Standard FR4 2-Layer PCB The following two figures show examples with different values for D1 (ground strip separa­tion).
Figure 28: Micro-Stripline on 1.0mm standard FR4 2-layer PCB - example 1
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Antenna line
Ground line
Ground line
Application board
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Figure 29: Micro-Stripline on 1.0mm Standard FR4 PCB - example 2
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Antenna line
Ground line
Ground line
Application board
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Micro-Stripline on 1.5mm Standard FR4 2-Layer PCB The following two figures show examples with different values for D1 (ground strip separa­tion).
Figure 30: Micro-Stripline on 1.5mm Standard FR4 PCB - example 1
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Antenna line
Ground line
Ground line
Application board
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Figure 31: Micro-Stripline on 1.5mm Standard FR4 PCB - example 2
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2.2.3.2 Routing Example
Interface to RF Connector
Figure 32 shows the connection of the module‘s antenna pad with an application PCB‘s coaxial
antenna connector. Please note that the ELS61-USA bottom plane appears mirrored, since it is viewed from ELS61-USA top side. By definition the top of customer's board shall mate with the bottom of the ELS61-USA module.
Figure 32: Routing to application‘s RF connector - top view
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2.3 Sample Application

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2.3 Sample Application
Figure 33 shows a typical example of how to integrate a ELS61-USA module with an applica-
tion. Usage of the various host interfaces depends on the desired features of the application.
Because of the very low power consumption design, current flowing from any other source into the module circuit must be avoided, for example reverse current from high state external control lines. Therefore, the controlling application must be designed to prevent reverse current flow. Otherwise there is the risk of undefined states of the module during startup and shutdown or even of damaging the module.
Because of the high RF field density inside the module, it cannot be guaranteed that no self interference might occur, depending on frequency and the applications grounding concept. The potential interferers may be minimized by placing small capacitors (47pF) at suspected lines (e.g. RXD0, VDDLP, and ON).
While developing SMT applications it is strongly recommended to provide test points for certain signals, i.e., lines to and from the module - for debug and/or test purposes. The SMT application should allow for an easy access to these signals. For details on how to implement test points see [3].
The EMC measures are best practice recommendations. In fact, an adequate EMC strategy for an individual application is very much determined by the overall layout and, especially, the po­sition of components.
Depending on the micro controller used by an external application ELS61-USA‘s digital input and output lines may require level conversion. Section 2.3.1 shows a possible sample level conversion circuit.
Note: ELS61-USA is not intended for use with cables longer than 3m.
Disclaimer No warranty, either stated or implied, is provided on the sample schematic diagram shown in
Figure 33 and the information detailed in this section. As functionality and compliance with na-
tional regulations depend to a great amount on the used electronic components and the indi­vidual application layout manufacturers are required to ensure adequate design and operating safeguards for their products using ELS61-USA modules.
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VCORE
V180
ASC0 (including GPIO1...GPIO3 for DSR0, DTR0, DCD0 and GPIO24 for RING0)/ SPI_CLK (f or DSR0)
GPIO16...GPIO19/
ASC1/
SPI
8
4
CCVCC
CCIO
CCCLK
CCIN
CCRST
SIM
V180
220nF
1nF
I2 CCLK
I2CDAT
2.2k***
V180
GPIO4 (FST_SHDN)
GPIO5 (Status LED)
GPIO6 (PWM) GPIO7 (PWM)
GPIO8 (COUNTER )
GPIO11...GPIO15
LED
GND
GND
GND
ANT_MAIN
BATT+
RF
y
Main antenna
ELS6x
All SIM components should be close to card holder. Keep SIM wires low capacitive.
*10pF
*10pF
* add optional 10pF for SIM protection against RF (internal Antenna)
150µF,
Low ESR!
33pF
Blocking**
Blocking**
Blocking**
PWR_IND
BATT+
BB
53
204
GPIO20...GPIO23/
DAI
4
Blocking**
100k
4.7k
100k
22k
2.2k***
3
USB
150µF,
Low ESR!
33pF
GND
GND
ANT_DRX
Diversity antenna
ON
EMERG_RST
RESET
VDDLP
100k
VDDL P
BEAD*
BEAD*: It is recommended to add the BEAD as shown to the BATT+
BB
line. The purpose of this is to mitigate noise from baseband power supply.
Note 1: BLM15PD121SN1D MURATA Ind Chip Bead (120Ohm 25% 100MHz Ferrite
1.3A) is recommended in this case. For details please visit www.murata.com.
Note 2: The Bead should be placed as close as possible to the module.
*** I
2
C interface of the module already has internal 1KOhm pull up resistor to V180 inside the module. Please take this into consideration during application design.
Blocking** = For more details see Section 3.7
For switch on circuit see Section 3.2.1
2.3 Sample Application
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Power suppl
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5V tolerarant
5V tolerarant
Low level input
Low level input
Low level input
VCC
5V tolerant
VCC
E.g., 74VHC1GT50
E.g.,
NC7WZ16
74LVC2G34
External application
Micro controller
VLOGIC
(3.0V...3.6V)
Input lines,
e.g., µRXD, µCTS
Output lines,
e.g., µTXD, µRTS
V180 (1.8V)
Digital output lines, e.g., RXDx, CTSx
Wireless module
Digital input lines, e.g., TXDx, RTSx
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2.3 Sample Application
59

2.3.1 Sample Level Conversion Circuit

Depending on the micro controller used by an external application ELS61-USA‘s digital input and output lines (i.e., ASC0, ASC1 and GPIO lines) may require level conversion. The following
Figure 34 shows a sample circuit with recommended level shifters for an external application‘s
micro controller (with VLOGIC between 3.0V...3.6V). The level shifters can be used for digital input and output lines with V
max=1.85V or VIHmax =1.85V.
OH
Figure 34: Sample level conversion circuit
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3 Operating Characteristics

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3 Operating Characteristics

3.1 Operating Modes

The table below briefly summarizes the various operating modes referred to throughout the document.
Table 12: Overview of operating modes
Mode Function
Normal operation
Power Down
Airplane mode
Alarm mode
UMTS / HSPA / LTE SLEEP
UMTS / HSPA / LTE IDLE
UMTS TALK/ UMTS DATA
HSPA DATA HSPA data transfer in progress. Power consumption depends on net-
LTE DATA LTE data transfer in progress. Power consumption depends on network
Normal shutdown after sending the power down command. Only a voltage regulator is active for powering the RTC. Software is not active. Interfaces are not accessible. Operat­ing voltage remains applied.
Airplane mode shuts down the radio part of the module, causes the module to log off from the network and disables all AT commands whose execution requires a radio connection. Airplane mode can be controlled by AT command (see [1]).
Restricted operation launched by RTC alert function when the module is in Power Down mode. In Alarm mode, the module remains deregistered from the network. Limited number of AT commands is accessible.
Power saving set automatically when no call is in progress and the USB connection is suspended by host or not present and no active commu­nication via ASC0.
Power saving disabled or an USB connection not suspended, but no call in progress.
UMTS data transfer in progress. Power consumption depends on net­work settings (e.g. TPC Pattern) and data transfer rate.
work settings (e.g. TPC Pattern) and data transfer rate.
settings (e.g. TPC Pattern) and data transfer rate.
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3.2 Power Up/Power Down Scenarios
In general, be sure not to turn on ELS61-USA while it is beyond the safety limits of voltage and temperature stated in Section 2.1.2.1. ELS61-USA immediately switches off after having start­ed and detected these inappropriate conditions. In extreme cases this can cause permanent damage to the module.

3.2.1 Turn on ELS61-USA

ELS61-USA can be turned on as described in the following sections:
Connecting the operating voltage BATT+ (see Section 3.2.1.1).
Hardware driven switch on by ON line: Starts Normal mode (see Section 3.2.1.2).
After startup or restart, the module will send the URC ^SYSSTART that notifies the host appli­cation that the first AT command can be sent to the module (see also [1]).
3.2.1.1 Connecting ELS61-USA BATT+ Lines
Figure 35 shows sample external application circuits that allow to connect (and also to tempo-
rarily disconnect) the module‘s BATT+ lines from the external application‘s power supply.
Figure 35 illustrates the application of power employing an externally controlled microcontrol-
ler. The voltage supervisory circuit ensures that the power is disconnected and applied again depending on given thresholds.
The transistor T2 mentioned in Figure 35 should have an R imize voltage drops.
Such circuits could be useful to maximize power savings for battery driven applications or to completely switch off and restart the module after a firmware update.
After connecting the BATT+ lines the module can then be (re-)started as described in Section
3.2.1.2 and Section 3.2.2.
value < 50m in order to min-
DS_ON
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3.8V
Module
Place C2-C5 close to module
µcontroller
ENABLE
VBATT
VBATT_IN
C1
100nF
C2 47µF,X5R
C3 47µF,X5R
C4 47µF,X5R
C5 47µF,X5R
C6 47µF,X5R
R1
100k
R2
100k
R3
100k
R6
10k
T1
T2
IRML6401
BC847
3.2 Power Up/Power Down Scenarios
83
Figure 35: Sample circuit for applying power using an external µC
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VDDLP
ON
1k
+
R1
R2
Option 1 Option 2
RTC backup
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3.2.1.2 Switch on ELS61-USA Using ON Signal
After the operating voltage BATT+ is applied, ELS61-USA can be switched on by means of the ON signal.
The ON signal is an edge triggered signal and allows the input voltage level up to 5V. The mod­ule starts into normal mode on detecting the rising edge of the ON signal. The rising edge of ON signal must be applied at least 100 milliseconds later than BATT+. See Figure 37.
The following Figure 36 shows recommendations for possible switch-on circuits.
Figure 36: ON circuit options
It is recommended to set a serial 1kOhm resistor between the ON circuit and the external ca­pacitor or battery at the VDDLP power supply (i.e., RTC backup circuit). This serial resistor pro­tection is necessary in case the capacitor or battery has low power (is empty).With Option 2 the typical resistor values are: R1 = 150k and R2 = 3k. But the resistor values depend on the cur­rent gain from the employed PNP resistor.
Please note that the ON signal is an edge triggered signal. This implies that a micro-second high pulse on the signal line suffices to almost immediately switch on the module, as shown in
Figure 37. After module startup the ON signal should always be set to low to prevent possible
back powering at this pad.
1
1. Please take due discretion when designing the filtering circuit, especially ESD, which may cause unin­tended switch on.
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BATT+
ON
EMERG_RST
V180
VCORE
VDDLP
Rising edge only starts up the module
>100ms
Voltage Detector*
BATT+
BB
GND
ON
VDDLP
GND
* It is recommended to apply the 3-pin microprocessor reset monitor MAX803SQ293T1G or MAX803SQ293D3T1G manufactured by ON Semiconductor.
Details please refer to www.onsemi.com
VCC RESET
GND
100nF Not Assembled
R1
10KOhm
R2
0Ohm
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Figure 37: ON timing
3.2.1.3 Automatic Power On
If an automatic power on function is required for module application, circuit shown in either
Figure 38 or Figure 39 is recommended.
Figure 38: Automatic ON circuit based on voltage detector - option 1
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Voltage Detector*
BATT+
BB
GND
ON
VDDLP
* It is recommended to apply the ultra-low current voltage detector NCP303LSN28 T1 manufactured by ON Semiconductor .
Details please refer to www.onsemi.com
Input
RESET
Output
GND
R1
10KOhm
21
3
0.1μF
GND
5 C
D
3.2 Power Up/Power Down Scenarios
83
Figure 39: Automatic ON circuit based on voltage detector - option 2
Page 65 of 113

3.2.2 Restart ELS61-USA

After startup ELS61-USA can be re-started as described in the following sections:
Software controlled reset by AT+CFUN command: Starts Normal mode (see Section
3.2.2.1).
Hardware controlled reset by EMERG_RST line: Starts Normal mode (see Section 3.2.2.2).
3.2.2.1 Restart ELS61-USA via AT+CFUN Command
To reset and restart the ELS61-USA module use the command AT+CFUN. See [1] for details.
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BATT+
ON
EMERG_RST
VCORE
V180
VDDLP
>10ms
System
started
System
started again
Reset
state
Ignition
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3.2.2.2 Restart ELS61-USA Using EMERG_RST
The EMERG_RST signal is internally connected to the main module processor. A low level for more than 10ms sets the processor and with it all the other signal pads to their respective reset state. The reset state is described in Section 3.2.3 as well as in the figures showing the startup behavior of an interface.
After releasing the EMERG-RST line, i.e., with a change of the signal level from low to high, the module restarts. The other signals continue from their reset state as if the module was switched on by the ON signal.
It is recommended to control this EMERG_RST line with an open collector transistor or an open drain field-effect transistor.
Caution: Use the EMERG_RST line only when, due to serious problems, the software is not responding for more than 5 seconds. Pulling the EMERG_RST line causes the loss of all infor­mation stored in the volatile memory. Therefore, this procedure is intended only for use in case of emergency, e.g. if ELS61-USA does not respond, if reset or shutdown via AT command fails.
Figure 40: Emergency restart timing
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3.2.3 Signal States after Startup

Table 13 lists the states each interface signal passes through during reset phase and the first
firmware initialization. For further firmware startup initializations the values may differ because of different GPIO line configurations.
The reset state is reached with the rising edge of the EMERG_RST signal - either after a normal module startup (see Section 3.2.1.2) or after a reset (see Section 3.2.2.2). After the reset state has been reached the firmware initialization state begins. The firmware initialization is complet­ed as soon as the ASC0 interface lines CTS0, DSR0 and RING0 as well as the ASC1 interface line CTS1 have turned low (see Section 2.1.4 and Section 2.1.5). Now, the module is ready to receive and transmit data.
Table 13: Signal states
Signal name Reset state First start up configuration
CCIO L O / L CCRST L O / L CCCLK L O / L CCIN T / 100k PD I / PD RXD0 T / PU O / H TXD0 T / PD I CTS0 T / PU O / H RTS0 T / PU I / PD GPIO1 T / PD T / PD GPIO2 T / PD T / PD GPIO3 T / PD T / PD GPIO4 T / PD T / PD GPIO5 T / PD T / PD GPIO6 T / PD T / PD GPIO7 T / PD T / PD GPIO8 T / PD T / PD GPIO11-GPIO15 T / PD T / PD GPIO16 T / PD T / PD GPIO17 T / PD T / PD GPIO18 T / PD T / PD GPIO19 T / PD T / PD GPIO20 T / PD T / PD GPIO21 T / PD T / PD GPIO22 T / PD T / PD GPIO23 T / PD T / PD GPIO24 T / PD T / PD I2CCLK T / PU OD / PU I2CDAT T / PU OD / PU
Abbreviations used in above Table 13:
L = Low level H = High level T = Tristate I = Input
O = Output OD = Open Drain PD = Pull down, 200µA at 1.9V PU = Pull up, -240µA at 0V
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3.2.4 Turn off ELS61-USA

To switch the module off the following procedures may be used:
Software controlled shutdown procedure: Software controlled by sending an AT command
over the serial application interface. See Section 3.2.4.1.
Hardware controlled shutdown procedure: Hardware controlled by disconnecting the mod-
• ule‘s power supply lines BATT+ (see Section 3.2.1.1).
Automatic shutdown (software controlled): See Section 3.2.5
- Takes effect if ELS61-USA board temperature or voltage levels exceed a critical limit.
3.2.4.1 Switch off ELS61-USA Using AT Command
The best and safest approach to powering down ELS61-USA is to issue the appropriate AT command. This procedure lets ELS61-USA log off from the network and allows the software to enter into a secure state and safe data before disconnecting the power supply. The mode is referred to as Power Down mode. In this mode, only the RTC stays active. After sending the switch off command AT^SMSO, be sure not to enter any further AT commands until the module was restarted.
CAUTION: Be sure not to disconnect the operating voltage V
before V180 pad has gone
BATT+
low. Otherwise you run the risk of losing data, or in some rare cases even to render the module inoperable.
To monitor the V180 line, it is recommended to implement a power indication circuit as de­scribed in Section 2.1.14.2.
While ELS61-USA is in Power Down mode the application interface is switched off and must not be fed from any other voltage source.
Therefore, your application must be designed to
avoid any current flow into any digital pads of the application interface.
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BATT+
VCORE
V180
VDDLP
AT^SMSO System power down procedure Power down
EMERG_RST
ON
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Figure 41: Switch off behavior
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3.2.5 Automatic Shutdown

Automatic shutdown takes effect if the following event occurs:
ELS61-USA board is exceeding the critical limits of overtemperature or undertemperature (see Section 3.2.5.1)
Undervoltage or overvoltage is detected (see Section 3.2.5.2 and Section 3.2.5.3)
The automatic shutdown procedure is equivalent to the power-down initiated with an AT com­mand, i.e. ELS61-USA logs off from the network and the software enters a secure state avoid­ing loss of data.
3.2.5.1 Thermal Shutdown
The board temperature is constantly monitored by an internal NTC resistor located on the PCB. The values detected by the NTC resistor are measured directly on the board and therefore, are not fully identical with the ambient temperature.
Each time the board temperature goes out of range or back to normal, ELS61-USA instantly displays an alert (if enabled).
URCs indicating the level "1" or "-1" allow the user to take appropriate precautions, such as protecting the module from exposure to extreme conditions. The presentation of the URCs depends on the settings selected with the AT^SCTM write command (for details see [1]): AT^SCTM=1: Presentation of URCs is always enabled. AT^SCTM=0 (default): Presentation of URCs is enabled during the 2 minute guard period after start-up of ELS61-USA. After expiry of the 2 minute guard period, the presentation of URCs will be disabled, i.e. no URCs with alert levels "1" or ''-1" will be generated.
URCs indicating the level "2" or "-2" are instantly followed by an orderly shutdown. The pre­sentation of these URCs is always enabled, i.e. they will be output even though the factory setting AT^SCTM=0 was never changed.
The maximum temperature ratings are stated in Section 3.5. Refer to Table 14 for the associ­ated URCs.
Table 14: Temperature dependent behavior
Sending temperature alert (2min after ELS61-USA start-up, otherwise only if URC presentation enabled)
^SCTM_B: 1 Board close to overtemperature limit.
^SCTM_B: -1 Board close to undertemperature limit.
^SCTM_B: 0 Board back to non-critical temperature range.
Automatic shutdown (URC appears no matter whether or not presentation was enabled)
^SCTM_B: 2 Alert: Board equal or beyond overtemperature limit. ELS61-USA switches off.
^SCTM_B: -2 Alert: Board equal or below undertemperature limit. ELS61-USA switches off.
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3.2.5.2 Undervoltage Shutdown
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The undervoltage shutdown threshold is the specified minimum supply voltage V
BATT+
given in
Table 2. When the average supply voltage measured by ELS61-USA approaches the under-
voltage shutdown threshold (i.e., 0.05V offset) the module will send the following URC:
^SBC: Undervoltage Warning
The undervoltage warning is sent only once - until the next time the module is close to the un­dervoltage shutdown threshold.
If the voltage continues to drop below the specified undervoltage shutdown threshold, the mod­ule will send the following URC:
^SBC: Undervoltage Shutdown
This alert is sent only once before the module shuts down cleanly without sending any further messages.
This type of URC does not need to be activated by the user. It will be output automatically when fault conditions occur.
Note: For battery powered applications it is strongly recommended to implement a BATT+ con­necting circuit as described in Section 3.2.1.1 in order to not only be able save power, but also to restart the module after an undervoltage shutdown where the battery is deeply discharged. Also note that the undervoltage threshold is calculated for max. 400mV voltage drops during transmit burst. Power supply sources for external applications should be designed to tolerate 400mV voltage drops without crossing the lower limit of 3.0 V. For external applications oper­ating at the limit of the allowed tolerance the default undervoltage threshold may be adapted by subtracting an offset. For details see [1]: AT^SCFG= "MEShutdown/sVsup/threshold".
3.2.5.3 Overvoltage Shutdown
The overvoltage shutdown threshold is the specified maximum supply voltage V
Table 2. When the average supply voltage measured by ELS61-USA approaches the overvolt-
age shutdown threshold (i.e., 0.05V offset) the module will send the following URC:
^SBC: Overvoltage Warning
The overvoltage warning is sent only once - until the next time the module is close to the over­voltage shutdown threshold.
If the voltage continues to rise above the specified overvoltage shutdown threshold, the module will send the following URC:
^SBC: Overvoltage Shutdown
This alert is sent only once before the module shuts down cleanly without sending any further messages.
This type of URC does not need to be activated by the user. It will be output automatically when fault conditions occur.
Keep in mind that several ELS61-USA components are directly linked to BATT+ and, therefore, the supply voltage remains applied at major parts of ELS61-USA. Especially the power ampli­fier linked to BATT+
is very sensitive to high voltage and might even be destroyed.
RF
BATT+
given in
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3.3 Power Saving

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3.3 Power Saving
ELS61-USA can be configured to control power consumption:
Using the AT command AT^SPOW it is possible to specify a so-called power saving mode
for the module (<mode> = 2; for details on the command see [1]). The module‘s UART inter­faces (ASC0 and ASC1) are then deactivated and will only periodically be activated to be able to listen to network paging messages as described in Section 3.3.1 and Section 3.3.2. See Section 3.3.3 for a description on how to immediately wake up ELS61-USA again using RTS0.
Please note that the AT^SPOW setting has no effect on the USB interface. As long as the USB connection is active, the module will not change into its SLEEP state to reduce its func­tionality to a minimum and thus minimizing its current consumption. To enable switching into SLEEP mode, the USB connection must therefore either not be present at all or the USB host must bring its USB interface into Suspend state. Also, VUSB_IN should always be kept enabled for this functionality. See “Universal Serial Bus Specification Revision 2.0” for a description of the Suspend state.
1

3.3.1 Power Saving while Attached to WCDMA Networks

The power saving possibilities while attached to a WCDMA network depend on the paging tim­ing cycle of the base station.
During normal WCDMA operation, i.e., the module is connected to a WCDMA network, the duration of a power saving period varies. It may be calculated using the following formula:
DRX value
t = 2
DRX (Discontinuous Reception) in WCDMA networks is a value between 6 and 9, thus result­ing in power saving intervals between 0.64 and 5.12 seconds. The DRX value of the base sta­tion is assigned by the WCDMA network operator.
In the pauses between listening to paging messages, the module resumes power saving, as shown in Figure 42.
* 10 ms (WCDMA frame duration).
Figure 42: Power saving and paging in WCDMA networks
The varying pauses explain the different potential for power saving. The longer the pause the less power is consumed.
1. The specification is ready for download on http://www.usb.org/developers/docs/
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Generally, power saving depends on the module’s application scenario and may differ from the above mentioned normal operation. The power saving interval may be shorter than 0.64 sec­onds or longer than 5.12 seconds.

3.3.2 Power Saving while Attached to LTE Networks

The power saving possibilities while attached to an LTE network depend on the paging timing cycle of the base station.
During normal LTE operation, i.e., the module is connected to an LTE network, the duration of a power saving period varies. It may be calculated using the following formula:
t = DRX Cycle Value * 10 ms
DRX cycle value in LTE networks is any of the four values: 32, 64, 128 and 256, thus resulting in power saving intervals between 0.32 and 2.56 seconds. The DRX cycle value of the base station is assigned by the LTE network operator.
In the pauses between listening to paging messages, the module resumes power saving, as shown in Figure 43.
Figure 43: Power saving and paging in LTE networks
The varying pauses explain the different potential for power saving. The longer the pause the less power is consumed.
Generally, power saving depends on the module’s application scenario and may differ from the above mentioned normal operation. The power saving interval may be shorter than 0.32 sec­onds or longer than 2.56 seconds.
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RTS0
CTS0
TXD0
RXD0
AT comm and
Reply URC
RTS assertion (falling edge)
Wake up from SLEEP mode
Return to SLEEP mode
RTS back
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3.3 Power Saving
83

3.3.3 Wake-up via RTS0

RTS0 can be used to wake up ELS61-USA from SLEEP mode configured with AT^SPOW. Assertion of RTS0 (i.e., toggle from inactive high to active low) serves as wake up event, thus allowing an external application to almost immediately terminate power saving. After RTS0 assertion, the CTS0 line signals module wake up, i.e., readiness of the AT command interface. It is therefore recommended to enable RTS/CTS flow control (default setting).
Figure 44 shows the described RTS0 wake up mechanism.
Figure 44: Wake-up via RTS0
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3.4 Power Supply

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3.4 Power Supply
ELS61-USA needs to be connected to a power supply at the SMT application interface - 2 lines BATT+, and GND. There are two separate voltage domains for BATT+:
•BATT+
•BATT+
Please note that throughout the document BATT+ refers to both voltage domains and power supply lines - BATT+
with a line mainly for the baseband power supply.
BB
with a line for the UMTS/LTE power amplifier supply.
RF
and BATT+RF.
BB
The power supply of ELS61-USA has to be a single voltage source at BATT+
and BATT+RF.
BB
It must be able to provide the peak current during the uplink transmission.
All the key functions for supplying power to the device are handled by the power management section of the analog controller. This IC provides the following features:
Stabilizes
the supply voltages for the baseband using low drop linear voltage regulators and
a DC-DC step down switching regulator.
Switches the module's power voltages for the power-up and -down procedures.
SIM switch to provide SIM power supply.

3.4.1 Power Supply Ratings

Table 15 and Table 16 assemble various voltage supply and current consumption ratings of the
module.
Table 15: Voltage supply ratings
Description Conditions Min Typ Max Unit
BATT+ Supply voltage Directly measured at Module. Voltage
must stay within the min/max values, including voltage drop, ripple, spikes.
3.0 4.5 V
Maximum allowed voltage drop during transmit burst
Voltage ripple Normal condition, power control level
Normal condition, power control level for Pout max
for Pout max @ f <= 250 kHz @ f > 250 kHz
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400 mV
12090mV
mV
pp
pp
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83
Table 16: Current consumption ratings
Description Conditions Typical rating Unit
I
@ 1.8V OFF State supply
VDDLP
current
I
BATT+
1
OFF State supply
current (i.e., sum of BATT+
BATT+
BB
RF)
Average UMTS
and
supply current
Data transfer @
maximum Pout
RTC backup @ BATT+ = 0V 0.1 µA
Power Down 84 µA
2
SLEEP
@ DRX=9
USB disconnected
(UART deactivated)
USB suspended
SLEEP
2
@ DRX=8
USB disconnected
(UART deactivated)
USB suspended
SLEEP
2
@ DRX=6
USB disconnected
(UART deactivated)
USB suspended
3
IDLE
@ DRX=6
USB disconnected
(UART active, but no communication)
USB active
UMTS Data transfer Band II 640 mA
UMTS Data transfer Band IV 650 mA
UMTS Data transfer Band V 405 mA
HSPA Data transfer Band II 640 mA
HSPA Data transfer Band IV 650 mA
HSPA Data transfer Band V 405 mA
Voice call Band II 615 mA
Voice call Band IV 615 mA
Voice call Band V 385 mA
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1.9 mA
1.9 mA
1.9 mA
1.9. mA
2.6 mA
2.5 mA
14 mA
33 mA
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Table 16: Current consumption ratings
Description Conditions Typical rating Unit
1
I
BATT+
(i.e., sum of BATT+
BATT+
BB
RF)
and
Average LTE sup-
ply current
Data transfer @
maximum Pout
SLEEP Occasions“ = 256
SLEEP Occasions“ = 128
SLEEP Occasions“ = 64
SLEEP Occasions“ = 32
IDLE (UART active, but no communication)
LTE
LTE
LTE
LTE
LTE
LTE
LTE
LTE
2
@ “Paging
USB disconnected
USB suspended
2
@ “Paging
USB disconnected
USB suspended
2
@ “Paging
USB disconnected
USB suspended
2
@ “Paging
USB disconnected
USB suspended
3
@ DRX=6
USB disconnected
USB active
4
Data transfer Band 2 705 mA
4
Data transfer Band 4 725 mA
4
Data transfer Band 5 540 mA
4
Data transfer Band 12 670 mA
4
Voice call Band 2 TBD. mA
4
Voice call Band 4 TBD. mA
4
Voice call Band 5 TBD. mA
4
Voice call Band 12 TBD. mA
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TBD. mA
TBD. mA
TBD. mA
TBD. mA
TBD. mA
TBD. mA
TBD. mA
TBD. mA
17 mA
36 mA
1. With an impedance of Z Down ratings that were measured at 3.0V.
2. Measurements start 6 minutes after switching ON the module,
Averaging times: SLEEP mode - 3 minutes, transfer modes - 1.5 minutes Communication tester settings: no neighbour cells, no cell reselection etc., RMC (reference measurement channel). Note that SLEEP mode is enabled via AT command AT^SPOW=2, 1000, 3
3. The power save mode is disabled via AT command AT^SCFG=”MEopMode/PwrSave”, “disabled”.
4. Communication tester settings: Channel Bandwidth: 5MHz Number of Resource Blocks: 25 (DL), 1 (UL) Modulation: QPSK
=50 at the antenna connector.Measured at 25°C at 3.8V - except for Power
LOAD
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Reference point GND: Module shielding
Reference point BATT+: External test pad connected to and positioned closely to BATT+ pad 53 or 204.
External application
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83
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3.4.2 Measuring the Supply Voltage (V
To measure the supply voltage V
it is possible to define two reference points GND and
BATT+
BATT+
)
BATT+. GND should be the module’s shielding, while BATT+ should be a test pad on the ex­ternal application the module is mounted on. The external BATT+ reference point has to be connected to and positioned close to the SMT application interface’s BATT+ pads 53 (BATT+
) or 204 (BATT+BB) as shown in Figure 45.
RF
Figure 45: Position of reference points BATT+ and GND

3.4.3 Monitoring Power Supply by AT Command

To monitor the supply voltage you can also use the AT^SBV command which returns the value related to the reference points BATT+ and GND.
The module continuously measures the voltage at intervals depending on the operating mode of the RF interface. The duration of measuring ranges from 0.5 seconds in TALK/DATA mode to 50 seconds when ELS61-USA is in IDLE mode or Limited Service (deregistered). The dis­played voltage (in mV) is averaged over the last measuring period before the AT^SBV com­mand was executed.
If the measured voltage drops below or rises above the voltage shutdown thresholds, the mod­ule will send an "^SBC" URC and shut down (for details see Section 3.2.5).
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3.5 Operating Temperatures

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3.5 Operating Temperatures
Please note that the module’s lifetime, i.e., the MTTF (mean time to failure) may be reduced, if operated outside the extended temperature range.
Table 17: Board temperature
Parameter Min Typ Max Unit
Normal operation -30 +25 +85 °C
Extended operation
Automatic shutdown
Temperature measured on ELS61-USA board
1. Extended operation allows normal mode speech calls or data transmission for limited time until automatic thermal shutdown takes effect. Within the extended temperature range (outside the normal operating temperature range) the specified electrical characteristics may be in- or decreased.
2. Due to temperature measurement uncertainty, a tolerance of ±3°C on the thresholds may occur.
1
2
-40 +90 °C
<-40 --- >+90 °C
See also Section 3.2.5 for information about the NTC for on-board temperature measurement, automatic thermal shutdown and alert messages.
Note: Within the specified operating temperature ranges the board temperature may vary to a great extent depending on operating mode, used frequency band, radio output power and cur­rent supply voltage.
For more information regarding the module’s thermal behavior please refer to [4].
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Main/Diversity
Antenna
18pF
22nH
ANT_MAIN/
ANT_DRX
(Pad 59/56)
18pF
T pad attenuator circuit
Main/Diversity
Antenna
18nH
ANT_MAIN/
ANT_DRX
(Pad 59/56)
4.7pF
PI pad attenuator circuit
18nH

3.6 Electrostatic Discharge

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3.6 Electrostatic Discharge
The module is not protected against Electrostatic Discharge (ESD) in general. Consequently, it is subject to ESD handling precautions that typically apply to ESD sensitive components. Proper ESD handling and packaging procedures must be applied throughout the processing, handling and operation of any application that incorporates a ELS61-USA module.
An example for an enhanced ESD protection for the SIM interface is given in Section 2.1.6.1.
ELS61-USA has been tested according to group standard
ETSI EN 301 489-1 (see Table 25) and
test standard EN 61000-4-2. Electrostatic values can be gathered from the following table.
Table 18: Electrostatic values
Specification/Requirements Contact discharge Air discharge EN 61000-4-2
Antenna interfaces ±1kV n.a.
Antenna interfaces with ESD pro­tection (see Section 3.6.1)
BATT+ ±4kV ±8kV
JEDEC JESD22-A114D (Human Body Model, Test conditions: 1.5 k, 100 pF)
All other interfaces ±1kV n.a.
±4kV ±8kV
Note: The values may vary with the individual application design. For example, it matters whether or not the application platform is grounded over external devices like a computer or other equipment, such as the Gemalto reference application described in Chapter 5.

3.6.1 ESD Protection for Antenna Interfaces

The following Figure 46 shows how to implement an external ESD protection for the RF anten- na interfaces (ANT_MAIN and ANT_DRX) with either a T pad or PI pad attenuator circuit (for RF line routing design see also Section 2.2.3).
Recommended inductor types for the above sample circuits: Size 0402 SMD from Panasonic ELJRF series (22nH and 18nH inductors) or Murata LQW15AN18NJ00 (18nH inductors only).
Figure 46: ESD protection for RF antenna interface
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C
GND
SMT
R
Application
EMI measures A
SMT
R
Application
EMI measures C
C
GND
SMT
L
Application
EMI measures E
C
GND
SMT
Application
EMI measures B
SMT
L
Application
EMI measures D
Page 81 of 113

3.7 Blocking against RF on Interface Lines

83
3.7 Blocking against RF on In terface Lines
To reduce EMI issues there are serial resistors, or capacitors to GND, implemented on the module for the ignition, emergency restart, and SIM interface lines (cp. Section 2.3). However, all other signal lines have no EMI measures on the module and there are no blocking measures at the module’s interface to an external application.
Dependent on the specific application design, it might be useful to implement further EMI mea­sures on some signal lines at the interface between module and application. These measures are described below.
There are five possible variants of EMI measures (A-E) that may be implemented between module and external application depending on the signal line (see Figure 47 and Table 19). Pay attention not to exceed the maximum input voltages and prevent voltage overshots if using in­ductive EMC measures.
The maximum value of the serial resistor should be lower than 1k
on the signal line. The max-
imum value of the capacitor should be lower than 50pF on the signal line. Please observe the electrical specification of the module‘s SMT application interface and the external application‘s interface.
Figure 47: EMI circuits
Note: In case the application uses an internal RF antenna that is implemented close to the ELS61-USA module, Gemalto strongly recommends sufficient EMI measures, e.g. of type B or C, for each digital input or output.
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3.7 Blocking against RF on Interface Lines
83
The following table lists for each signal line at the module‘s SMT application interface the EMI measures that may be implemented.
Table 19: EMI measures on the application interface
Signal name EMI measures Remark
A B C D E
CCIN x x
CCRST x The external capacitor should be not higher
CCIO x
CCCLK x
RXD0 xxxxx
TXD0 xxxxx
CTS0 xxxxx
RTS0 xxxxx
GPIO1/DTR0 xxxxx
GPIO2/DCD0 xxxxx
GPIO3/DSR0/SPI_CLKxxxxx
GPIO4/FST_SHDN xxxxx
GPIO5/LED xxxxx
GPIO6/PWM2 xxxxx
GPIO7/PWM1 xxxxx
GPIO8/COUNTER xxxxx
GPIO11-GPIO15 xxxxx
GPIO16/RXD1/MOSIxxxxx
GPIO17/TXD1/MISO xxxxx
GPIO18/RTS1 xxxxx
GPIO19/CTS1/SPI_CSxxxxx
GPIO20/DOUT xxxxx
GPIO21/DIN xxxxx
GPIO22/FSC xxxxx
GPIO23/BCLK xxxxx
GPIO24/RING0 xxxxx
I2CDAT x x The rising signal edge is reduced with an
I2CCLK x x
V180 x x x
VCORE x x x
BATT+
BATT+
(pad 53) x x Measures required if BATT+RF is close to
RF
(pad 204) x x
BB
VUSB x x x
USB_DP It is not allowed to use any external ESD or
USB_DN
than 30pF. The value of the capacitor depends on the external application.
additional capacitor.
internal RF antenna ­e.g., 39pF blocking capacitor to ground
EMI components at this interface signal lines.
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3.8 Reliability Characteristics

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3.8 Reliability Characteristics
The test conditions stated below are an extract of the complete test specifications.
Table 20: Summary of reliability test conditions
Type of test Conditions Standard
Vibration Frequency range: 10-20Hz; acceleration: 5g
Frequency range: 20-500Hz; acceleration: 20g Duration: 20h per axis; 3 axes
DIN IEC 60068-2-6
1
Shock half-sinus Acceleration: 500g
Shock duration: 1ms 1 shock per axis 6 positions (± x, y and z)
Dry heat Temperature: +70 ±2°C
Test duration: 16h Humidity in the test chamber: < 50%
Temperature change (shock)
Damp heat cyclic High temperature: +55°C ±2°C
Cold (constant exposure)
1. For reliability tests in the frequency range 20-500Hz the Standard’s acceleration reference value was increased to 20g.
Low temperature: -40°C ±2°C High temperature: +85°C ±2°C Changeover time: < 30s (dual chamber system) Test duration: 1h Number of repetitions: 100
Low temperature: +25°C ±2°C Humidity: 93% ±3% Number of repetitions: 6 Test duration: 12h + 12h
Temperature: -40 ±2°C Test duration: 16h
DIN IEC 60068-2-27
EN 60068-2-2 Bb ETS 300 019-2-7
DIN IEC 60068-2-14 Na
ETS 300 019-2-7
DIN IEC 60068-2-30 Db
ETS 300 019-2-5
DIN IEC 60068-2-1
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Product label
Top view
Bottom view

4 Mechanical Dimensions, Mounting and Packaging

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4 Mechanical Dimensions, Mounting and Packaging

4.1 Mechanical Dimensions of ELS61-USA

Figure 48 shows the top and bottom view of ELS61-USA and provides an overview of the
board's mechanical dimensions. For further details see Figure 49.
Figure 48: ELS61-USA– top and bottom view
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Figure 49: Dimensions of ELS61-USA (all dimensions in mm)
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4.2 Mounting ELS61-USA onto the Application Platform

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4.2 Mounting ELS61-USA onto the Application Platform
This section describes how to mount ELS61-USA onto the PCBs, including land pattern and stencil design, board-level characterization, soldering conditions, durability and mechanical handling. For more information on issues related to SMT module integration see also [3].
Note: To avoid short circuits between signal tracks on an external application's PCB and vari­ous markings at the bottom side of the module, it is recommended not to route the signal tracks on the top layer of an external PCB directly under the module, or at least to ensure that signal track routes are sufficiently covered with solder resist.

4.2.1 SMT PCB Assembly

4.2.1.1 Land Pattern and Stencil
The land pattern and stencil design as shown below is based on Gemalto characterizations for lead-free solder paste on a four-layer test PCB and a respectively 110 µm and 150 µm thick stencil.
The land pattern given in Figure 50 reflects the module‘s pad layout, including signal pads and ground pads (for pad assignment see Section 2.1.1).
Figure 50: Land pattern (top view)
The stencil design illustrated in Figure 51 and Figure 52 is recommended by Gemalto M2M as a result of extensive tests with Gemalto M2M Daisy Chain modules.
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The central ground pads are primarily intended for stabilizing purposes, and may show some more voids than the application interface pads at the module's rim. This is acceptable, since they are electrically irrelevant.
Figure 51: Recommended design for 110µm thick stencil (top view)
Figure 52: Recommended design for 150µm thick stencil (top view)
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4.2.1.2 Board Level Characterization
Board level characterization issues should also be taken into account if devising an SMT pro­cess.
Characterization tests should attempt to optimize the SMT process with regard to board level reliability. This can be done by performing the following physical tests on sample boards: Peel test, bend test, tensile pull test, drop shock test and temperature cycling. Sample surface mount checks are described in [3].
It is recommended to characterize land patterns before an actual PCB production, taking indi­vidual processes, materials, equipment, stencil design, and reflow profile into account. For land and stencil pattern design recommendations see also Section 4.2.1.1. Optimizing the solder stencil pattern design and print process is necessary to ensure print uniformity, to decrease sol­der voids, and to increase board level reliability.
Daisy chain modules for SMT characterization are available on request. For details refer to [3].
Generally, solder paste manufacturer recommendations for screen printing process parame­ters and reflow profile conditions should be followed. Maximum ratings are described in Section
4.2.3.

4.2.2 Moisture Sensitivity Level

ELS61-USA comprises components that are susceptible to damage induced by absorbed moisture.
Gemalto M2M’s ELS61-USA module complies with the latest revision of the IPC/JEDEC J­STD-020 Standard for moisture sensitive surface mount devices and is classified as MSL 4.
For additional moisture sensitivity level (MSL) related information see Section 4.2.4 and Sec-
tion 4.3.2.
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T
L
T
P
t
P
t
L
t
S
Preheat
t to maximum
Time
Temperature
T
Smin
T
Smax
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98

4.2.3 Soldering Conditions and Temperature

4.2.3.1 Reflow Profile
Page 89 of 113
Figure 53: Reflow Profile
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1
4
2
3
Module
Temperature sensors (1-4)
4.2 Mounting ELS61-USA onto the Application Platform
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Table 21: Reflow temperature ratings
1
Profile Feature Pb-Free Assembly
Preheat & Soak Temperature Minimum (T Temperature Maximum (T Time (t
Smin
to t
Smax
) (tS)
Average ramp up rate (T
Liquidous temperature (TL) Time at liquidous (t
)
L
Peak package body temperature (T
Time (t perature (T
) within 5 °C of the peak package body tem-
P
)
P
Average ramp-down rate 3 K/second max.
Smin
Smax
)
)
150°C 200°C
60-120 seconds
to TP) 3K/second max.
L
217°C 50-90 seconds
)245°C +0/-5°C
P
30 seconds max.
2
2
Time 25°C to maximum temperature 8 minutes max.
1. Please note that the reflow profile features and ratings listed above are based on the joint industry standard IPC/JEDEC J-STD-020D.1, and are as such meant as a general guideline. For more information on reflow profiles and their optimization please refer to [3].
2. Temperatures measured on shielding at each corner. See also [3].
4.2.3.2 Maximum Temperature and Duration
The following limits are recommended for the SMT board-level soldering process to attach the module:
A maximum module temperature of 245°C. This specifies the temperature as measured at the module’s top side.
A maximum duration of 30 seconds at this temperature.
Please note that while the solder paste manufacturers' recommendations for best temperature and duration for solder reflow should generally be followed, the limits listed above must not be exceeded.
ELS61-USA is specified for one soldering cycle only. Once ELS61-USA is removed from the application, the module will very likely be destroyed and cannot be soldered onto another ap­plication.
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4.2.4 Durability and Mechanical Handling

4.2.4.1 Storage Conditions
ELS61-USA modules, as delivered in tape and reel carriers, must be stored in sealed, moisture barrier anti-static bags. The conditions stated below are only valid for modules in their original packed state in weather protected, non-temperature-controlled storage locations. Normal stor­age time under these conditions is 12 months maximum.
Table 22: Storage conditions
Type Condition Unit Reference
Air temperature: Low
High
Humidity relative: Low
High
Air pressure: Low
High
Movement of surrounding air 1.0 m/s IEC TR 60271-3-1: 1K4
Water: rain, dripping, icing and frosting
Radiation: Solar
Heat
Chemically active substances Not
Mechanically active substances Not
Vibration sinusoidal:
Displacement Acceleration Frequency range
Shocks:
Shock spectrum Duration Acceleration
-25 +40
10 90 at 40°C
70 106
Not allowed --- ---
1120 600
recommended
recommended
1.5 5 2-9 9-200
semi-sinusoidal 1 50
°C IPC/JEDEC J-STD-033A
%
IPC/JEDEC J-STD-033A
kPa IEC TR 60271-3-1: 1K4
IEC TR 60271-3-1: 1K4
2
W/m
mm m/s Hz
ms m/s
ETS 300 019-2-1: T1.2, IEC 60068-2-2 Bb ETS 300 019-2-1: T1.2, IEC 60068-2-2 Bb
IEC TR 60271-3-1: 1C1L
IEC TR 60271-3-1: 1S1
IEC TR 60271-3-1: 1M2
2
IEC 60068-2-27 Ea
2
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4.2.4.2 Processing Life
ELS61-USA must be soldered to an application within 72 hours after opening the moisture bar­rier bag (MBB) it was stored in.
As specified in the IPC/JEDEC J-STD-033 Standard, the manufacturing site processing the modules should have ambient temperatures below 30°C and a relative humidity below 60%.
4.2.4.3 Baking
Baking conditions are specified on the moisture sensitivity label attached to each MBB (see
Figure 58 for details):
It is
It is
not necessary to bake ELS61-USA, if the conditions specified in Section 4.2.4.1 and
Section 4.2.4.2 were not exceeded.
necessary to bake ELS61-USA, if any condition specified in Section 4.2.4.1 and Section
4.2.4.2 was exceeded.
If baking is necessary, the modules must be put into trays that can be baked to at least 125°C. Devices should not be baked in tape and reel carriers at any temperature.
4.2.4.4 Electrostatic Discharge
Electrostatic discharge (ESD) may lead to irreversable damage for the module. It is therefore advisable to develop measures and methods to counter ESD and to use these to control the electrostatic environment at manufacturing sites.
Please refer to Section 3.6 for further information on electrostatic discharge.
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44mm
330mm
Reel direction of the
completely equipped tape
Direction into SMD machine
View
direction
Pad 1
Pad 1
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4.3 Packaging

98
4.3 Packaging

4.3.1 Tape and Reel

The single-feed tape carrier for ELS61-USA is illustrated in Figure 54. The figure also shows the proper part orientation. The tape width is 44mm and the ELS61-USA modules are placed on the tape with a 32-mm pitch. The reels are 330mm in diameter with a core diameter of 100mm. Each reel contains 500 modules.
4.3.1.1 Orientation
Figure 54: Carrier tape
Figure 55: Reel direction
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Barcode label
4.3 Packaging
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4.3.1.2 Barcode Label
A barcode label provides detailed information on the tape and its contents. It is attached to the reel.
Figure 56: Barcode label on tape reel
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4.3.2 Shipping Materials

ELS61-USA is distributed in tape and reel carriers. The tape and reel carriers used to distribute ELS61-USA are packed as described below, including the following required shipping materi­als:
Moisture barrier bag, including desiccant and humidity indicator card
Transportation box
4.3.2.1 Moisture Barrier Bag
The tape reels are stored inside a moisture barrier bag (MBB), together with a humidity indica­tor card and desiccant pouches - see Figure 57. The bag is ESD protected and delimits mois­ture transmission. It is vacuum-sealed and should be handled carefully to avoid puncturing or tearing. The bag protects the ELS61-USA modules from moisture exposure. It should not be opened until the devices are ready to be soldered onto the application.
Figure 57: Moisture barrier bag (MBB) with imprint
The label shown in Figure 58 summarizes requirements regarding moisture sensitivity, includ­ing shelf life and baking requirements. It is attached to the outside of the moisture barrier bag.
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Figure 58: Moisture Sensitivity Label
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MBBs contain one or more desiccant pouches to absorb moisture that may be in the bag. The humidity indicator card described below should be used to determine whether the enclosed components have absorbed an excessive amount of moisture.
The desiccant pouches should not be baked or reused once removed from the MBB.
The humidity indicator card is a moisture indicator and is included in the MBB to show the ap­proximate relative humidity level within the bag. Sample humidity cards are shown in Figure 59. If the components have been exposed to moisture above the recommended limits, the units will have to be rebaked.
Figure 59: Humidity Indicator Card - HIC
A baking is required if the humidity indicator inside the bag indicates 10% RH or more.
4.3.2.2 Transportation Box
Tape and reel carriers are distributed in a box, marked with a barcode label for identification purposes. A box contains two reels with 500 modules each.
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4.3.3 Trays

If small module quantities are required, e.g., for test and evaluation purposes, ELS61-USA may be distributed in trays (for dimensions see Figure 60). The small quantity trays are an alterna­tive to the single-feed tape carriers normally used. However, the trays are not designed for ma­chine processing. They contain modules to be (hand) soldered onto an external application (for information on hand soldering see [3]).
Trays are packed and shipped in the same way as tape carriers, including a moisture barrier bag with desiccant and humidity indicator card as well as a transportation box (see also Section
4.3.2).
Figure 60: Tray dimensions
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5 Regulatory and Type Approval Information

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5 Regulatory and Type Approval Information

5.1 Directives and Standards

ELS61-USA is designed to comply with the directives and standards listed below.
It is the responsibility of the application manufacturer to ensure compliance of the final product with all provisions of the applicable directives and standards as well as with the technical spec­ifications provided in the "ELS61-USA Hardware Interface Description”.
Table 23: Directives
2014/53/EU Directive of the European Parliament and of the council of 16 April 2014 on
the harmonization of the laws of the Member States relating to the making available on the market of radio equipment and repealing Directive 1999/ 05/EC.
The product is labeled with the CE conformity mark.
1
2002/95/EC (RoHS 1) 2011/65/EC (RoHS 2)
Table 24: Standards of North American type approval
CFR Title 47 Code of Federal Regulations, Part 22 and Part 24 (Telecommunications,
OET Bulletin 65 (Edition 97-01)
UL 60 950-1 Product Safety Certification (Safety requirements)
NAPRD.03 V5.15 Overview of PCS Type certification review board Mobile Equipment Type
RSS132 (Issue2) RSS133 (Issue5)
Table 25: Standards of European type approval
Directive of the European Parliament and of the Council of 27 January 2003 (and revised on 8 June 2011) on the restriction of the use of certain hazardous substances in electrical and electronic equipment (RoHS)
PCS); US Equipment Authorization FCC
Evaluating Compliance with FCC Guidelines for Human Exposure to Radiofrequency Electromagnetic Fields
Certification and IMEI control PCS Type Certification Review board (PTCRB)
Canadian Standard
3GPP TS 51.010-1 Digital cellular telecommunications system (Release 9); Mobile Station
(MS) conformance specification;
GCF-CC V3.61.2 Global Certification Forum - Certification Criteria
ETSI EN 301 511 V12.5.1
1. Manufacturers of applications which can be used in the US shall ensure that their applications have a PTCRB approval. For this purpose they can refer to the PTCRB approval of the respective module.
Global System for Mobile communications (GSM); Mobile Stations (MS) equipment; Harmonized Standard covering the essential requirements of article 3.2 of Directive 2014/53/EU
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Table 25: Standards of European type approval
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Draft ETSI EN 301 489­01 V2.2.0
Electromagnetic Compatibility (EMC) standard for radio equipment and ser­vices; Part 1: Common technical requirements; Harmonized Standard cov­ering the essential requirements of article 3.1(b) of Directive 2014/53/EU and the essential requirements of article 6 of Directive 2014/30/EU
Draft ETSI EN 301 489-52 V1.1.0
Electromagnetic Compatibility (EMC) standard for radio equipment and ser­vices; Part 52: Specific conditions for Cellular Communication Mobile and portable (UE) radio and ancillary equipment; Harmonized Standard cover­ing the essential requirements of article 3.1(b) of Directive 2014/53/EU
ETSI EN 301 908-1 V11.1.1
IMT cellular networks; Harmonized Standard covering the essential require­ments of article 3.2 of the Directive 2014/53/EU; Part 1: Introduction and common requirements
ETSI EN 301 908-13 V11.1.1
IMT cellular networks; Harmonized Standard covering the essential requirements of article 3.2 of the Directive 2014/53/EU; Part 13: Evolved Universal Terrestrial Radio Access (E-UTRA) User Equipment (UE)
EN 60950-1: 2006
Safety of information technology equipment +A11:2009+A1:2010+A 12:2011+A2:2013
Table 26: Requirements of quality
IEC 60068 Environmental testing
DIN EN 60529 IP codes
Table 27: Standards of the Ministry of Information Industry of the People’s Republic of China
SJ/T 11363-2006 “Requirements for Concentration Limits for Certain Hazardous Sub-
stances in Electronic Information Products” (2006-06).
SJ/T 11364-2006 “Marking for Control of Pollution Caused by Electronic
Information Products” (2006-06).
According to the “Chinese Administration on the Control of Pollution caused by Electronic Information Products” (ACPEIP) the EPUP, i.e., Environmental Protection Use Period, of this product is 20 years as per the symbol shown here, unless otherwise marked. The EPUP is valid only as long as the product is operated within the operating limits described in the Gemalto M2M Hardware Interface Description.
Please see Table 28 for an overview of toxic or hazardous substances or elements that might be contained in product parts in concentrations above the limits defined by SJ/T 11363-2006.
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