CMOS 8-BANK x 262,144-WORD x 32 BIT, FCRAM Core Based
Synchronous Dynamic Random Access Memory
with Double Data Rate
DESCRIPTION
■■■■
The Fujitsu MB81P643287 is a CMOS Synchronous Dynamic Random Access Memory (SDRAM) with Fujitsu
advanced FCRAM (F ast Cycle Random Access Memory) Core Technology, containing 67,108,864 memory cells
accessible in an 32-bit format. The MB81P643287 features a fully synchronous operation referenced to clock
edge whereby all operations are synchronized at a cloc k input which enables high performance and simple user
interface coe xistence. The MB81P643287 is designed to reduce the complexity of using a standard dynamic RAM
(DRAM) which requires many control signal timin.g constraints. The MB81P643287 uses Double Data Rate (DDR)
where data bandwidth is twice of fast speed compared with regular SDRAMs.
The MB81P643287 is ideally suited for Digital Visual Systems, High Performance Graphic Adapters, Hardware
Accelerators, Buffers, and other applications where large memor y density and high effective bandwidth are
required and where a simple interface is needed.
The MB81P643287 adopts new I/O interface circuitry, SSTL_2 interface, which is capable of extremely fast data
transfer of quality under either terminated or point to point bus environment.
CL = 23.75 ns Min.4.5 ns Min.
Random Address Cycle Time30 ns Min.36 ns Min.
DQS Access Time From Clock0.1 × t
Operating Current460 mA Max.405 mA Max.
Power Down Current35 mA Max.
Note: FCRAM is a trademark of Fujitsu Limited, Japan.
Device Deselect*4DESLHHXXXXXXX
No Operation*4NOPHLHHHXXXX
Burst Stop*5BSTHLHHLXXXX
Read*6READHLHLHVLXV
Read with Auto-precharge*6 READAHLHLHVHXV
Write*6WRITHLHLLVLXV
Write with Auto-precharge*6 WRITAHLHLLVHXV
Bank Active (RAS
Precharge Single Bank*8PREHLLHLVLXX
Precharge All Banks*8PALLHLLHLVHXX
Mode Register Set/
Extended Mode Register Set
)*7ACTVHLLHHVVVV
*8,9,10
Notes: *1. V = Valid, L = Logic Low, H = Logic High, X = either L or H, Hi-Z = High Impedance.
*2. All commands are assumed to be valid state transitions.
*3. All inputs for command are latched on the rising edge of clock(CLK).
*4. NOP and DESL commands have the same effect on the part.
Unless specifically noted, NOP will represent both NOP and DESL command in later descriptions.
*5. BST is effective after READ command is issued.
*6. READ , READ A, WRIT and WRITA commands should only be issued after the corresponding bank has
been activated (ACTV command). Refer to “■ STATE DIAGRAM”.
*7. ACTV command should only be issued after corresponding bank has been page closed by PRE or
PALL command.
*8. Either PRE or PALL command and MRS or EMRS command are required after power up.
*9. MRS or EMRS command should only be issued after all banks have been page closed (PRE or PALL
command), and DQs are in Hi-Z. Refer to “■ STATE DIAGRAM”.
*10. Refer to“■ MODE REGISTER TABLE”.
6
DM TRUTH TABLE (Effective during Write mode)
FunctionCommand
(n - 1)(n)
CKE
MB81P643287-50/-60
DM
0
DM
1
DM
2
DM
3
Data Mask for DQ
Data Mask for DQ
Data Mask for DQ
0 to DQ7MASK0HXHXXX
8 to DQ15MASK1HXXHXX
16 to DQ23MASK2HXXXHX
*11: The REF and SELF commands should only be issued after all banks have been precharged (PRE or PALL
command). In case of SELF command, it should also be issued after the last read data have been appeared
on DQ. Refer to “■ STATE DIAGRAM”.
*12: CKE must bring to Low level together with REF command.
*13: The PDEN command should only be issued after the last read data have been appeared on DQ and after the
l
DPL is satisfied from last write data input.
7
MB81P643287-50/-60
OPERATION COMMAND TABLE (Applicable to single bank)(Note*13)
Current
State
Idle
RAS CAS WEAddressCommandFunctionNotes
CS
HXXXXDESL NOP
LHHHXNOPNOP
LHHLXBSTNOP*15
LHLHBA, CA, APREAD/READA Illegal*16
LHLLBA, CA, APWRIT/WRITAIllegal*16
LLHHBA, RAACTVBank Active after l
LLHLBA, APPRENOP
LLHLBA, APPALLNOP*15
LLLHXREF/SELFAuto-refresh or Self-refresh*17
RCD
Bank Active
LLLL MODE MRS
HXXXXDESL NOP
LHHHXNOPNOP
LHHLXBSTNOP*15
LHLHBA, CA, APREAD/READA Begin Read; Determine AP
LHLLBA, CA, APWRIT/WRITABegin Write; Determine AP
LLHHBA, RAACTVIllegal*16
LLHLBA, APPREPrecharge
LLHLBA, APPALLPrecharge*15
LLLHXREF/SELFIllegal
LLLL MODE MRS Illegal
Mode Register Set
(Idle after l
MRD)
*17
8
OPERATION COMMAND TABLE (Continued)
Current
State
CS
RAS CAS WEAddressCommandFunctionNotes
HXXXXDESL
MB81P643287-50/-60
NOP (Continue Burst to End →
Bank Active)
Read
Write
LHHHXNOP
LHHLXBSTTerminate Burst → Bank Active
LHLHBA, CA, APREAD/READA
LHLLBA, CA, APWRIT/WRITAIllegal
LHHHXNOPNOP (Idle after l
LHHLXBSTNOP (Idle after l
RP)
RP)*15
LHLHBA, CA, APREAD/READA Illegal*16
LHLLBA, CA, APWRIT/WRITAIllegal*16
LLHHBA, RAACTVIllegal*16
LLHLBA, APPRENOP*16
LLHLBA, APPALLNOP*15
LLLHXREF/SELFIllegal
LLLL MODE MRS Illegal
HXXXXDESLNOP (Bank Active after l
LHHHXNOPNOP (Bank Active after l
LHHLXBSTNOP (Bank Active after l
RCD)
RCD)
RCD)*15
LHLHBA, CA, APREAD/READA Illegal*16
LHLLBA, CA, APWRIT/WRITAIllegal*16
LLHHBA, RAACTVIllegal*19
LLHLBA, APPREIllegal*16
LLHLBA, APPALLIllegal
LLLHXREF/SELFIllegal
LLLL MODE MRS Illegal
11
MB81P643287-50/-60
OPERATION COMMAND TABLE (Continued)
Current
State
CS
RAS CAS WEAddressCommandFunctionNotes
Write
Recovering
Write
Recovering
with Autoprecharge
HXXXXDESLNOP (Bank Active after l
LHHHXNOPNOP (Bank Active after l
LHHLXBSTNOP (Bank Active after l
WRD)
WRD)
WRD)*15
LHLHBA, CA, APREAD/READA Illegal*16
LHLLBA, CA, APWRIT/WRITANew Write; Determine AP
LLHHBA, RAACTVIllegal*16
LLHLBA, APPREIllegal*16
LLHLBA, APPALLIllegal
LLLHXREF/SELFIllegal
LLLL MODE MRS Illegal
HXXXXDESLNOP (Idle after l
LHHHXNOPNOP (Idle after l
WAL)
WAL)
LHHLXBSTIllegal
LHLHBA, CA, APREAD/READA Illegal*16
LHLLBA, CA, APWRIT/WRITAIllegal*16
LLHHBA, RAACTVIllegal*16
LLHLBA, APPREIllegal*16
LLHLBA, APPALLIllegal
Refreshing
LLLHXREF/SELFIllegal
LLLL MODE MRS Illegal
HXXXXDESLNOP (Idle after l
LHHXXNOP/BSTNOP (Idle after l
LHLXX
LLHXX
LLLXX
READ/READA/
WRIT/WRITA
ACTV/
PRE/PALL
REF/SELF/
MRS
Illegal
Illegal
Illegal
RFC)
RFC)
12
MB81P643287-50/-60
OPERATION COMMAND TABLE (Continued)
Current
State
Mode
Register
Setting
Abbreviations: RA = Row Address BA = Bank Address
Notes: *14. All entries assume the CKE was High during the proceeding clock cycle and the current clock cycle.
*15. Entry may affect other banks.
*16. Illegal to bank in specified state; entry may be legal in the bank specified by BA, depending on the state
*17. Illegal if any bank is not idle.
*18. Must mask preceding data that don‘t satisfy lDPL.
*19. Legal if other bank specified in BA is idle state and lRRD is satisfied for that bank.
*20. Must mask preceding data that don‘t satisfy lWRD.
Exit Self-refresh
(Self-refresh Recovery →
Idle after t
PDEX + lSCD or lXSNR)
Exit Self-refresh
(Self-refresh Recovery →
Idle after t
PDEX + lSCD or lXSNR)
SCD or lXSNR
Selfrefresh
Recovery
Power
Down
HHLHHHXI dle after lSCD or lXSNR
HHLHHLXIllegal
HHLHLXXIllegal
HHLLXXXIllegal
HLXXXX XIllegal
HXXXXX XInvalid
LHHXXX X
LHLHHH X
Power Down Exit → Return to original
state after t
PDEX
Power Down Exit → Return to original
state after tPDEX
LHLHHLXIllegal
LHLHLXXIllegal
LHLLXXXIllegal
LLXXXX XNOP (Maintain Power Down Mode)
14
COMMAND TRUTH TABLE FOR CKE (continued)
Current
State
All
Banks
Idle
CKE
(n-1)
CKE
(n)
HHHXXX XNOP
HHLHXXVRefer to the Command Truth Table.
HHLLHXVRefer to the Command Truth Table.
HHLLLHXAuto-refresh
HHLLLL VMode Register Set*21
HLHXXXXPower Down Entry*22
HLLHHHXPower Down Entry*22
HLLHHLXIllegal
HLLHLXXIllegal
HLLLHXXIllegal
HLLLLH XSelf-refresh Entry*22
HLLLLL XIllegal
RASCASWEAddressFunctionNotes
CS
MB81P643287-50/-60
Bank Active
LXXXXX XInvalid
HHXXXX XRefer to the Command Truth Table.
HLXXXX XIllegal
LHXXXX XInvalid
LLXXXX XInvalid
15
MB81P643287-50/-60
COMMAND TRUTH TABLE FOR CKE (continued)
Current
State
CKE
(n-1)
CKE
(n)
RASCASWEAddressFunctionNotes
CS
Bank
Activating,
Read, Write,
Write
Recovering,
Precharging
Any State
Other Than
Listed Above
Refresh
Notes: *21. Refer to “■ MODE REGISTER TABLE”.
*22. PDEN and SELF command should only be issued after the last read data have been appeared on DQ.
*23. The Clock Suspend mode is not supported on this device and it is illegal if CKE is brought to Low during
HHXXXX XRefer to the Command Truth Table.
HLXXXX XIllegal*23
LHXXXX XInvalid
LLXXXX XInvalid
LXXXXX XInvalid
HHXXXX XRefer to the Command Truth Table.
HLXXXX XIllegal*23
HLHLLLXIllegal
HLLHHHXIllegal
HLLHHLXIllegal
HLLHLXXIllegal
HLLLXXXIllegal
LLXXXX XInvalid
LHXXXX XInvalid
HHXXXX XRefer to the Command Truth Table.
the Burst Read or Write mode.
16
MB81P643287-50/-60
STATE DIAGRAM
■■■■
MINIMUM CLOCK LATENCY OR DELAY TIME FOR SINGLE BANK OPERATION
Second command
(same bank)
First
command
MRS
MRS ACTV READ
l
MRDlMRDlMRDlMRDlMRDlMRDlMRD
READA
WRIT
WRITA
BST
*1
PREPALLREFSELF
ACTV
READ
READA
WRIT
WRITA
BST
PRE
PALL
lRCD*4lRCDlRCD*4lRCD1lRASlRAS
*5, 6
BL/2
+ l
RP
BL/2
+ l
*6
lWALlWAL
*5, 6
RP
* 4
1
lWRD
*7
lWRD1
1
*4, 7
11*3lBSNC*3lBSNC1
lRWD
* 3
*3, 4
lRWD1
* 4
1
1
BL/2
+ l
RP
lDPL
*4
*4
*4,7
*4
1
BL/2
+ l
RP
lDPL
*4
*4
BL/2
+ l
*4,7
lWAL*4lWAL*6lWAL
*4
1
*4
1
lRPlRP11*41
*5
lRPAlRPA111lRPA
lRP
RP
*6
*5, 6
BL/2
+ l
RP
*6
lWAL
*6
*5, 6
lRP
*5
lRPA
REF
SELFX
Notes: *1. BL/2 = t
*2. Assume PALL command does not affect any operation on the other bank(s).
*3. Assume no I/O conflict.
*4. l
RAS must be satisfied.
*5. Assume all outputs are in High-Z state.
*6. Assume all other banks are in idle state.
*7. l
DPL and lWRD are specified from last data input and assumed preceding pair of write data are masked
by DM
Illegal Command
l
RFClRFClRFClRFClRFClRFClRFC
l
XSNRlXSNRlXSNRlXSNRlXSNRlXSNRlXSNR
CK× BL / 2. (Example: In case of BL = 4, BL/2 means 2 clocks.)
0 toDM3 input.
17
MB81P643287-50/-60
MINIMUM CLOCK LATENCY OR DELAY TIME FOR MULTIPLE BANK OPERATION
Second command
(other bank)
First
command
MRS
*8
*10
MRS ACTV
l
MRDlMRDlMRDlMRDlMRDlMRDlMRD
READ
*8
READA
WRIT
*8
WRITA
*8
BST
*9
PREPALLREFSELF
*2, 9
ACTV
READ
READA
WRIT
WRITA
BST
PRE
PALL
*5, 6
BL/2 +
l
RP
lWAL
*5, 6
lRP
*6
lRRD
*6
111
*6
1
*6
1
*6
*6
1
*6
1
*6
1
*5
*11
1
*11
1
*11
1
* 3
*11
1
*11
11lRAS
lRWD*3lRWD11*41
*4
1
*7
*4
* 3, 4
1
lRWD
* 3, 4
lRWD1BL/2 +
lWRD*7lWRD111
BL/2
+ l
1
1
*4
WRD
*11
*11
*4
BL/2
+ l
WRD
1
*111*3, 11
lBSNC
*111*3, 111*3, 11
*4
*4
11lWAL*6lWAL
*3, 11
lBSNC11*41
*11
1
11*41
l
RP
lDPL
*4,7
lRPAlRPA111lRPA
BL/2 +
l
RP
lRP
*6
*6
*5, 6
BL/2 +
l
RP
lWAL
*5, 6
lRP
lRPA
*6
*5
18
REF
SELFX
l
RFClRFClRFClRFClRFClRFClRFC
l
XSNRlXSNRlXSNRlXSNRlXSNRlXSNRlXSNR
MB81P643287-50/-60
Notes: *1. BL/2 = t
*2. Assume PALL command does not affect any operation on the other bank(s).
*3. Assume no I/O conflict.
*4. l
RAS must be satisfied.
*5. Assume all outputs are in High-Z state.
*6. Assume the other bank(s) is in idle state.
*7. l
DPL and lWRD are specified from last data input and assumed preceding pair of write data are masked
by DM
*8. Assume the other bank(s) is in active state and l
*9. Assume the other bank(s) is in active state and l
*10. Second command have to follow the minimum clock latency or delay time of single bank operation in
other bank (second command is asserted.)
*11. Assume other banks are not in READA/WRITA state.
Illegal Command.
CK× BL / 2. (Example: In case of BL = 4, BL/2 means 2 clocks.)
0 to DM3 input.
RCD is satisfied.
RAS is satisfied.
19
MB81P643287-50/-60
Fig. 2 - STATE DIAGRAM (Simplified for Single Bank Operation)
MODE
REGISTER
SET
POWER
DOWN
WRIT
PDEX
WRITE
MRS
PDEN
WRIT
WRITA
WRIT
IDLE
ACTV
BANK
ACTIVE
READA
READ
READ
SELF
SELFX
REF
BST
READ
SELF-
REFRESH
AUTO
REFRESH
READ
20
POWER
ON
APPLIED
with PDEN
WRITA
WITH AUTO
PRECHARGE
PDEX and 8 PRE (or 1 PALL)
POWER
WRITE
READA
PRE or
PALL
PRECHARGE
DEFINITION OF ALLOWS
Manual
Input
WRITA
PALL
PRE or
PRE or
PALL
READA
READ WITH
AUTO
PRECHARGE
Automatic
Sequence
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