FUJITSU FRM5W232BS, FRM5W232BS-A User Manual

Edition 1.4
November 2003

1

InGaAs-APD/Preamp
Receiver

FRM5W232BS/BS-A

Parameter Symbol

Storage Temperature

T

stg

-40 to +85 °C

Operating Case Temperature

-40 to +85 °C

T

op

Supply Voltage

0 to +4.5 V

V

DD

APD Reverse Voltage

0 to VB (Note)

V

V

R

APD Reverse Current

3.0 mA

I

R(peak)

Ratings Unit

ABSOLUTE MAXIMUM RATINGS (Tc=25°C, unless otherwise specified)

Note: Since the VB may vary from device to device, VB data is attached to each device for reference.
.

FEATURES

• 2.7Gb/s APD Receiver module in an industry
standard mini-DIL package is available in gull-wing
or through-hole configuration

• High Sensitivity: -34 dBm (typ.)

• Differential Electrical Output

• Integral Thermistor and GaAs IC Preamp

• Wide operating temperature range: -40 to +85°C

APPLICATIONS

This APD detector preamp is intended to function as an
optical receiver in long haul SONET, SDH, and DWDM systems
operating up to 2.7Gb/s. The device operates in both the 1,310 and
1,550nm wavelength windows. The nominal 10KΩ integral thermistor allows
accurate monitoring of the APD temperature and facilitates the design of the
APD bias control circuits. The detector preamplifier has a differential electrical output.

DESCRIPTION

The FRM5W232BS incorporates a 30 micron InGaAs Avalanche Photodiode (APD)
detector, a GaAs IC transimpedance preamplifier, and a thermistor in a mini-DIL type
package. The APD is processed with modern MOVPE techniques resulting in reliable
performance over a wide range of operating conditions. The lens coupling system
and the single mode fiber are assembled using Nd: YAG welding techniques. The BS
package is designed for a surface mount PC board assembly, and the BS-A is designed
for through-hole mount assembly.

2

InGaAs-APD/Preamp

Receiver

FRM5W232BS/BS-A

Parameter Symbol

OPTICAL & ELECTRICAL CHARACTERISTICS
(Tc=25°C, λ=1,550nm, VDD=+3.3V unless otherwise specified)

Limits

Power Supply Voltage

V

DD

Power Supply Current

I

DD

Maximum Output Voltage Swing

Optical Return Loss

APD Responsivity

R15

R13

R16

Minimum Sensitivity

P

r

Maximum Overload

P

max

V

clip

Bandwidth

BW

AC Transimpedance

Z

t

Temperature Coefficient of VB

γ

Peaking

dpk

Group Delay Deviation

GD

Output Return Loss

S22

APD Breakdown Voltage

VB

Lower Cut-Off Frequency

fcl

Equivalent Input Noise
Current Density

in

Test Conditions

λ = 1,550nm, M=1

λ = 1,610nm, M=1

λ = 1,310nm, M=1

2.488Gb/s, NRZ, PRBS=223-1,
BER=10

-10

, M=3

M=3, Note (3)

Note (4)

Saturated Output Voltage

Pin=-30dBm, M=10,

-3dB from 1MHz

Pin=-30dBm, f=100MHz,

Single-end

Note (1)

Pin=-30dBm, M=10,

from 1MHz

Pin=-30dBm, M=10,

from 500MHz to 1.75GHz

up to 1.75GHz

up to 2.5GHz

ID=10µA

Average within 2.2GHz

Unit

V

mA

A/W

dBm

Ta=25°C, Rext=14dB

Ta=-40°C ~ 85°C,
Rext=14dB

Ta=25°C, Rext=10dB

dBm

mV

ORL

-

-

-

-

Tc=25°C

dB

GHz

Ω

V/°C

dB

psec

dB

V

kHz

pA Hz

Note: (1) γ=∆VB/∆Tc
Note: (2) All the parameters are measured with 50Ω AC-coupled.
Note: (3) Defined by 10% distortion of wave form.
Note: (4) Test condition is 2.488Gb/s, NRZ, PRBS=2

23

-1, B.E.R.=10

-10

, VR=Optimum with fc=1866MHz Bessel.

kΩ

Thermistor Resistance

Rth

K

Typ.

3.30

45

0.85

0.70

0.80

-

-

-34.0

550

2.4

2200

0.12

-

100

-

-

50

50

9.5

-33.0

-33.0

-

10.0

3900

Thermistor B Constant

B

Max.

3.45

70

-

-

-

-

-33.0

800

-

2600

0.15

+2

-

-

-

65

75

11

-

-31.0

-

-

10.5

4000

Min.

3.15

-

0.80

-

0.75

-5

-

450

2.2

1800

0.08

-

-

10

5

40

-

-

-7

-

-

30

9.5

3800

3

InGaAs-APD/Preamp
Receiver

FRM5W232BS/BS-A

Notes

4

InGaAs-APD/Preamp
Receiver

FRM5W232BS/BS-A

Fujitsu Compound Semiconductor Products contain gallium arsenide
(GaAs) which can be hazardous to the human body and the environment.

For safety, observe the following procedures:

CAUTION

• Do not put this product into the mouth.

• Do not alter the form of this product into a gas, powder, or liquid
through burning, crushing, or chemical processing as these by-products
are dangerous to the human body if inhaled, ingested, or swallowed.

• Observe government laws and company regulations when discarding this
product. This product must be discarded in accordance with methods
specified by applicable hazardous waste procedures.

“BS” PACKAGE

(GULL-WING)

UNIT: mm

For further information please contact:

FUJITSU COMPOUND SEMICONDUCTOR, INC.

2355 Zanker Rd.
San Jose, CA 95131-1138, U.S.A.
Phone: [phone]
FAX: [phone]

www.fcsi.fujitsu.com

FUJITSU QUANTUM DEVICES EUROPE LTD.

Network House
Norreys Drive
Maidenhead, Berkshire SL6 4FJ
United Kingdom
TEL: [phone]
FAX: [phone]

FUJITSU QUANTUM DEVICES
SINGAPORE PTE LTD.
Hong Kong Branch

Rm. 1101, Ocean Centre, 5 Canton Rd. Tsim Sha Tsui,
Kowloon, Hong Kong
TEL: [phone]
FAX: [phone]

FUJITSU QUANTUM DEVICES LIMITED

Business Development Division
11th Floor, Hachioji Daiichi-Seimei Bldg.
3-20-6 Myojin-cho
Hachioji-city, Tokyo 192-0046, Japan
TEL: [phone]
FAX: [phone]

Fujitsu Limited reserves the right to change products and specifications without notice.
The information does not convey any license under rights of Fujitsu Limited or others.

© 2003 FUJITSU COMPOUND SEMICONDUCTOR, INC.

Printed in U.S.A. FCSI1103M200

“BS-A” PACKAGE

(THROUGH-HOLE)

UNIT: mm

7.62±0.2

(P2.54x3)

0.3±0.05

Pin Description

1. VR

2. GROUND

3. OUT +

4. GROUND

5. THERMISTOR

6. OUT -

7. GROUND

8. VDD

1000 min.

See Lead Detail

7.37±0.15

9.77±0.15

∅0.9±0.1

∅4.1±0.2

24.1±2.0

11.37±0.15

0.4±0.05

(0.5)

(2.0)

5.2MAX.

Detail of Lead

(R0.7)

0~10°

(0.5)

1.2±0.07

0.50±0.15

(#1)

(#4) (#5)

Top View

∅0.9±0.1

∅4.1±0.2

1000 min.

(#8)

4.5 MON.

7.37±0.15

7.87±0.15

24.1±2.0

0.4±0.05

11.37±0.15

(0.5)

(2.0)

5.2MAX.

(#1)

(#4) (#5)

7.62±0.2

(P2.54x3)

Pin Description

1. VR

2. GROUND

3. OUT +

4. GROUND

5. THERMISTOR

6. OUT -

7. GROUND

8. VDD

(#8)

Top View