FUJITSU FRM5W232BS, FRM5W232BS-A User Manual
Edition 1.4
November 2003
1
InGaAs-APD/Preamp
Receiver
FRM5W232BS/BS-A
Parameter Symbol
Storage Temperature
T
stg
-40 to +85 °C
Operating Case Temperature
-40 to +85 °C
T
op
Supply Voltage
0 to +4.5 V
V
DD
APD Reverse Voltage
0 to VB (Note)
V
V
R
APD Reverse Current
3.0 mA
I
R(peak)
Ratings Unit
ABSOLUTE MAXIMUM RATINGS (Tc=25°C, unless otherwise specified)
Note: Since the VB may vary from device to device, VB data is attached to each device for reference.
.
FEATURES
• 2.7Gb/s APD Receiver module in an industry
standard mini-DIL package is available in gull-wing
or through-hole configuration
• High Sensitivity: -34 dBm (typ.)
• Differential Electrical Output
• Integral Thermistor and GaAs IC Preamp
• Wide operating temperature range: -40 to +85°C
APPLICATIONS
This APD detector preamp is intended to function as an
optical receiver in long haul SONET, SDH, and DWDM systems
operating up to 2.7Gb/s. The device operates in both the 1,310 and
1,550nm wavelength windows. The nominal 10KΩ integral thermistor allows
accurate monitoring of the APD temperature and facilitates the design of the
APD bias control circuits. The detector preamplifier has a differential electrical output.
DESCRIPTION
The FRM5W232BS incorporates a 30 micron InGaAs Avalanche Photodiode (APD)
detector, a GaAs IC transimpedance preamplifier, and a thermistor in a mini-DIL type
package. The APD is processed with modern MOVPE techniques resulting in reliable
performance over a wide range of operating conditions. The lens coupling system
and the single mode fiber are assembled using Nd: YAG welding techniques. The BS
package is designed for a surface mount PC board assembly, and the BS-A is designed
for through-hole mount assembly.
2
InGaAs-APD/Preamp
Receiver
FRM5W232BS/BS-A
Parameter Symbol
OPTICAL & ELECTRICAL CHARACTERISTICS
(Tc=25°C, λ=1,550nm, VDD=+3.3V unless otherwise specified)
Limits
Power Supply Voltage
V
DD
Power Supply Current
I
DD
Maximum Output Voltage Swing
Optical Return Loss
APD Responsivity
R15
R13
R16
Minimum Sensitivity
P
r
Maximum Overload
P
max
V
clip
Bandwidth
BW
AC Transimpedance
Z
t
Temperature Coefficient of VB
γ
Peaking
dpk
Group Delay Deviation
GD
Output Return Loss
S22
APD Breakdown Voltage
VB
Lower Cut-Off Frequency
fcl
Equivalent Input Noise
Current Density
in
Test Conditions
λ = 1,550nm, M=1
λ = 1,610nm, M=1
λ = 1,310nm, M=1
2.488Gb/s, NRZ, PRBS=223-1,
BER=10
-10
, M=3
M=3, Note (3)
Note (4)
Saturated Output Voltage
Pin=-30dBm, M=10,
-3dB from 1MHz
Pin=-30dBm, f=100MHz,
Single-end
Note (1)
Pin=-30dBm, M=10,
from 1MHz
Pin=-30dBm, M=10,
from 500MHz to 1.75GHz
up to 1.75GHz
up to 2.5GHz
ID=10µA
Average within 2.2GHz
Unit
V
mA
A/W
dBm
Ta=25°C, Rext=14dB
Ta=-40°C ~ 85°C,
Rext=14dB
Ta=25°C, Rext=10dB
dBm
mV
ORL
-
-
-
-
Tc=25°C
dB
GHz
Ω
V/°C
dB
psec
dB
V
kHz
pA Hz
Note: (1) γ=∆VB/∆Tc
Note: (2) All the parameters are measured with 50Ω AC-coupled.
Note: (3) Defined by 10% distortion of wave form.
Note: (4) Test condition is 2.488Gb/s, NRZ, PRBS=2
23
-1, B.E.R.=10
-10
, VR=Optimum with fc=1866MHz Bessel.
kΩ
Thermistor Resistance
Rth
K
Typ.
3.30
45
0.85
0.70
0.80
-
-
-34.0
550
2.4
2200
0.12
-
100
-
-
50
50
9.5
-33.0
-33.0
-
10.0
3900
Thermistor B Constant
B
Max.
3.45
70
-
-
-
-
-33.0
800
-
2600
0.15
+2
-
-
-
65
75
11
-
-31.0
-
-
10.5
4000
Min.
3.15
-
0.80
-
0.75
-5
-
450
2.2
1800
0.08
-
-
10
5
40
-
-
-7
-
-
30
9.5
3800
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