FUJITSU FRM5W232BS, FRM5W232BS-A User Manual

	InGaAs-APD/Preamp		FRM5W232BS/BS-A
	Receiver

FEATURES

•2.7Gb/s APD Receiver module in an industry standard mini-DIL package is available in gull-wing or through-hole configuration

•High Sensitivity: -34 dBm (typ.)

•Differential Electrical Output

•Integral Thermistor and GaAs IC Preamp

•Wide operating temperature range: -40 to +85°C

APPLICATIONS

This APD detector preamp is intended to function as an

optical receiver in long haul SONET, SDH, and DWDM systems operating up to 2.7Gb/s. The device operates in both the 1,310 and

1,550nm wavelength windows. The nominal 10KΩ integral thermistor allows accurate monitoring of the APD temperature and facilitates the design of the

APD bias control circuits. The detector preamplifier has a differential electrical output.

DESCRIPTION

The FRM5W232BS incorporates a 30 micron InGaAs Avalanche Photodiode (APD) detector, a GaAs IC transimpedance preamplifier, and a thermistor in a mini-DIL type package. The APD is processed with modern MOVPE techniques resulting in reliable performance over a wide range of operating conditions. The lens coupling system and the single mode fiber are assembled using Nd: YAG welding techniques. The BS

package is designed for a surface mount PC board assembly, and the BS-A is designed for through-hole mount assembly.

ABSOLUTE MAXIMUM RATINGS (Tc=25°C, unless otherwise specified)

Parameter	Symbol	Ratings	Unit
Storage Temperature	Tstg	-40 to +85	°C
Operating Case Temperature	Top	-40 to +85	°C
Supply Voltage	VDD	0 to +4.5	V
APD Reverse Voltage	VR	0 to VB (Note)	V
APD Reverse Current	IR(peak)	3.0	mA

Note: Since the VB may vary from device to device, VB data is attached to each device for reference.

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Edition 1.4

November 2003

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FRM5W232BS/BS-A								InGaAs-APD/Preamp
											Receiver
		OPTICAL & ELECTRICAL CHARACTERISTICS
		(Tc=25°C, λ=1,550nm, VDD=+3.3V unless otherwise specified)
		Parameter	Symbol		Test Conditions					Limits		Unit
									Min.	Typ.	Max.
			R13		λ = 1,310nm, M=1				0.75	0.80	-
		APD Responsivity	R15		λ = 1,550nm, M=1				0.80	0.85	-	A/W
			R16		λ = 1,610nm, M=1				-	0.70	-
		APD Breakdown Voltage	VB				ID=10µA		40	50	65	V
		Temperature Coefficient of VB	γ				Note (1)		0.08	0.12	0.15	V/°C
		AC Transimpedance	Zt	Pin=-30dBm, f=100MHz,					1800	2200	2600	Ω
						Single-end
		Bandwidth	BW		Pin=-30dBm, M=10,				2.2	2.4	-	GHz
					-3dB from 1MHz
		Lower Cut-Off Frequency	fcl						-	50	75	kHz
		Peaking	dpk		Pin=-30dBm, M=10,				-	-	+2	dB
							from 1MHz
		Group Delay Deviation	GD		Pin=-30dBm, M=10,				-	100	-	psec
				from 500MHz to 1.75GHz
		Output Return Loss	S22		up to 1.75GHz				10	-	-	dB
						up to 2.5GHz			5	-	-
		Equivalent Input Noise	in	Average within 2.2GHz					-	9.5	11	pA Hz
		Current Density
							Ta=25°C, Rext=14dB		-	-34.0	-33.0
		Minimum Sensitivity	Pr	Note (4)			Ta=-40°C ~ 85°C,		-	-33.0	-31.0	dBm
							Rext=14dB
							Ta=25°C, Rext=10dB		-	-33.0	-
				2.488Gb/s, NRZ, PRBS=223-1,					-5	-	-
		Maximum Overload	Pmax		BER=10-10, M=3							dBm
							M=3, Note (3)		-7	-	-
		Maximum Output Voltage Swing	Vclip	Saturated Output Voltage					450	550	800	mV
		Optical Return Loss	ORL			-			30	-	-	dB
		Power Supply Current	IDD			-			-	45	70	mA
		Power Supply Voltage	VDD			-			3.15	3.30	3.45	V
		Thermistor Resistance	Rth				Tc=25°C		9.5	10.0	10.5	kΩ
		Thermistor B Constant	B			-			3800	3900	4000	K
Note: (1) γ=∆VB/∆Tc

Note: (2) All the parameters are measured with 50Ω AC-coupled.

Note: (3) Defined by 10% distortion of wave form.

Note: (4) Test condition is 2.488Gb/s, NRZ, PRBS=223-1, B.E.R.=10-10, VR=Optimum with fc=1866MHz Bessel.

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