Fujitsu FLM0910-8F Schematic [ru]

1

Edition 1.2
August 1999

FLM0910-8F

X, Ku-Band Internally Matched FET

Item

Drain-Source Voltage

Gate-Source Voltage

Total Power Dissipation

Storage Temperature

Channel Temperature

Symbol

V

DS

V

GS

15

-5

42.8

-65 to +175

175

Tc = 25°C

V

V

W

°C

°C

P

T

T

stg

T

ch

Condition Unit

Rating

ABSOLUTE MAXIMUM RATING (Ambient Temperature Ta=25°C)

Fujitsu recommends the following conditions for the reliable operation of GaAs FETs:

1. The drain-source operating voltage (VDS) should not exceed 10 volts.

2. The forward and reverse gate currents should not exceed 32.0 and -4.4 mA respectively with
gate resistance of 100Ω.

Item

Saturated Drain Current
Transconductance

Pinch-off Voltage

Gate Source Breakdown Voltage

Power-added Efficiency

3rd Order Intermodulation
Distortion

Output Power at 1dB G.C.P.

Power Gain at 1dB G.C.P.

Symbol

I

DSS

- 3400 5200

- 3400

-

-0.5 -1.5 -3.0

-5.0 - -

6.5 7.5 -

-29-

38.5 39.0 -

VDS = 5V, I

DS

= 170mA

VDS = 5V, I

DS

= 2200mA

VDS = 5V, V

GS

= 0V

IGS = -170µA

VDS =10V,
IDS = 0.65 I

DSS (Typ.),

f =9.5 ~10.5 GHz,
ZS=ZL= 50 ohm

f = 10.5 GHz, ∆f = 10 MHz
2-Tone Test
P

out

= 28.5dBm S.C.L.

mA

mS

V

dB

%

-44 -46 - dBc

dBm

V

g

m

V

p

V

GSO

P

1dB

G

1dB

Drain Current

- 2200 2600 mA

I

dsr

IM

3

η

add

Gain Flatness

--±0.6 dB∆G

Test Conditions Unit

Limit
Typ.

Max.Min.

ELECTRICAL CHARACTERISTICS (Ambient Temperature Ta=25°C)

Channel to Case

Thermal Resistance

- 3.0

3.5

°C/W

R

th

G.C.P.: Gain Compression Point, S.C.L.: Single Carrier Level

CASE STYLE: IB

10V x I

dsr

x R

th

Channel Temperature Rise

--

80

°C

∆T

ch

DESCRIPTION

The FLM0910-8F is a power GaAs FET that is internally matched for
standard communication bands to provide optimum power and gain in a
50 ohm system.

Fujitsu’s stringent Quality Assurance Program assures the highest
reliability and consistent performance.

FEATURES

• High Output Power: P

1dB

= 39.0dBm (Typ.)

• High Gain: G

1dB

= 7.5dB (Typ.)

• High PAE: η

add

= 29% (Typ.)

• Low IM3= -46dBc@Po = 28.5dBm

• Broad Band: 9.5 ~ 10.5GHz

• Impedance Matched Zin/Zout = 50Ω

2

FLM0910-8F

X, Ku-Band Internally Matched FET

OUTPUT POWER & IM3 vs. INPUT POWER

VDS=10V
f1 = 10.5 GHz
f2 = 10.51 GHz
2-tone test

16 18 20 22 24 26

Input Power (S.C.L.) (dBm)
S.C.L.: Single Carrier Level

27

29

31

33

25

23

-50

-40

-30

-20

Output Power (S.C.L.) (dBm)

IM

3

P

out

IM

3

(dBc)

POWER DERATING CURVE

20

10

40

50

30

0

50 100 150 200

Case Temperature (°C)

Total Power Dissipation (W)

OUTPUT POWER vs. FREQUENCY

9.5

Pin=32dBm

30dBm

28dBm

26dBm

10.510.0

Frequency (GHz)

34

35

36

37

38

39

40

Output Power (dBm)

VDS=10V
P

1dB

OUTPUT POWER vs. INPUT POWER

VDS=10V
f = 10.0 GHz

2420 22 26 28 30 32 34

Input Power (dBm)

30

32

34

36

38

40

28

20

30

40

10

Output Power (dBm)

η

add

P

out

η

add

(%)

3

FLM0910-8F

X, Ku-Band Internally Matched FET

S-PARAMETERS

VDS= 10V, IDS= 2200mA

FREQUENCY S11 S21 S12 S22

(MHZ) MAG ANG MAG ANG MAG ANG MAG ANG

9300 .489 132.9 2.699 -108.2 .090 -140.2 .352 66.0
9400 .464 118.8 2.686 -120.0 .092 -152.4 .364 54.7
9500 .451 104.4 2.692 -131.6 .093 -164.8 .377 44.2
9600 .438 90.5 2.657 -142.5 .095 -175.1 .397 35.3
9700 .428 76.7 2.642 -153.9 .096 174.3 .412 28.2
9800 .421 62.4 2.640 -164.8 .095 162.4 .421 21.9

9900 .420 48.0 2.637 -175.5 .100 151.7 .417 17.2
10000 .418 32.1 2.651 173.5 .101 142.3 .406 12.1
10100 .420 15.7 2.668 162.3 .104 130.3 .385 7.9
10200 .424 -2.0 2.689 150.9 .107 119.4 .358 5.2
10300 .428 -20.4 2.703 138.8 .109 108.0 .320 2.6
10400 .440 -39.3 2.703 126.7 .108 96.1 .276 2.6
10500 .452 -58.2 2.691 114.2 .112 84.3 .231 3.3
10600 .469 -76.6 2.656 101.7 .112 72.3 .194 8.4
10700 .484 -94.2 2.600 89.0 .111 61.1 .166 17.4

+j250

+j100

+j50

+j25

+j10

0

-j10

-j25

-j50

-j100

-j250

S

11

S

22

180°

+90°

0°

-90°

S

21

S

12

SCALE FOR |S21|

SCALE FOR |S

12

|

0.2

0.1

250

50Ω

10.7

10.7

9.5

9.5

9.7

9.7

9.9

9.9

10.1

10.1

10.3

10.3

10.5

10.5

10 20

9.3GHz

9.3GHz

82 4 6

10.7

10.7

9.5

9.5

9.7

9.7

9.9

9.9

10.1

10.1

10.3

10.3

10.5

10.5

9.3GHz

9.3GHz

Download S-Parameters, click here

4

For further information please contact:

FUJITSU COMPOUND SEMICONDUCTOR, INC.

2355 Zanker Rd.
San Jose, CA 95131-1138, U.S.A.
Phone: [phone]
FAX: [phone]
www.fcsi.fujitsu.com

FUJITSU MICROELECTRONICS, LTD.

Compound Semiconductor Division
Network House
Norreys Drive
Maidenhead, Berkshire SL6 4FJ
Phone:[phone]
FAX:[phone]

Fujitsu Limited reserves the right to change products and specifications without notice.
The information does not convey any license under rights of Fujitsu Limited or others.

© 1999 FUJITSU COMPOUND SEMICONDUCTOR, INC.
Printed in U.S.A. FCSI0499M200

Fujitsu Compound Semiconductor Products contain gallium arsenide
(GaAs) which can be hazardous to the human body and the environment.
For safety, observe the following procedures:

CAUTION

• Do not put these products into the mouth.

• Do not alter the form of this product into a gas, powder, or liquid
through burning, crushing, or chemical processing as these by-products
are dangerous to the human body if inhaled, ingested, or swallowed.

• Observe government laws and company regulations when discarding this
product. This product must be discarded in accordance with methods
specified by applicable hazardous waste procedures.

FLM0910-8F

X, Ku-Band Internally Matched FET

2-R 1.6±0.15

(0.063)

0.6

(0.024)

10.7

(0.421)

12.0

(0.422)

17.0±0.15
(0.669)

21.0±0.15
(0.827)

12.9±0.2

(0.508)

2.0 Min.

(0.079)

2.0 Min.

(0.079)

0.2 Max.

(0.008)

1.45
(0.059)

Case Style "IB"

Metal-Ceramic Hermetic Package

Unit: mm(inches)

1. Gate

2. Source (Flange)

3. Drain

5.2 Max.
(0.205)

2.6±0.15
(0.102)

0.1

(0.004)

1

2

3