Fujitsu FLM0910-8F Schematic [ru]

1

Edition 1.2
August 1999

FLM0910-8F

X, Ku-Band Internally Matched FET

Item

Drain-Source Voltage

Gate-Source Voltage

Total Power Dissipation

Storage Temperature

Channel Temperature

Symbol

V

DS

V

GS

15

-5

42.8

-65 to +175

175

Tc = 25°C

V

V

W

°C

°C

P

T

T

stg

T

ch

Condition Unit

Rating

ABSOLUTE MAXIMUM RATING (Ambient Temperature Ta=25°C)

Fujitsu recommends the following conditions for the reliable operation of GaAs FETs:

1. The drain-source operating voltage (VDS) should not exceed 10 volts.

2. The forward and reverse gate currents should not exceed 32.0 and -4.4 mA respectively with
gate resistance of 100Ω.

Item

Saturated Drain Current
Transconductance

Pinch-off Voltage

Gate Source Breakdown Voltage

Power-added Efficiency

3rd Order Intermodulation
Distortion

Output Power at 1dB G.C.P.

Power Gain at 1dB G.C.P.

Symbol

I

DSS

- 3400 5200

- 3400

-

-0.5 -1.5 -3.0

-5.0 - -

6.5 7.5 -

-29-

38.5 39.0 -

VDS = 5V, I

DS

= 170mA

VDS = 5V, I

DS

= 2200mA

VDS = 5V, V

GS

= 0V

IGS = -170µA

VDS =10V,
IDS = 0.65 I

DSS (Typ.),

f =9.5 ~10.5 GHz,
ZS=ZL= 50 ohm

f = 10.5 GHz, ∆f = 10 MHz
2-Tone Test
P

out

= 28.5dBm S.C.L.

mA

mS

V

dB

%

-44 -46 - dBc

dBm

V

g

m

V

p

V

GSO

P

1dB

G

1dB

Drain Current

- 2200 2600 mA

I

dsr

IM

3

η

add

Gain Flatness

--±0.6 dB∆G

Test Conditions Unit

Limit
Typ.

Max.Min.

ELECTRICAL CHARACTERISTICS (Ambient Temperature Ta=25°C)

Channel to Case

Thermal Resistance

- 3.0

3.5

°C/W

R

th

G.C.P.: Gain Compression Point, S.C.L.: Single Carrier Level

CASE STYLE: IB

10V x I

dsr

x R

th

Channel Temperature Rise

--

80

°C

∆T

ch

DESCRIPTION

The FLM0910-8F is a power GaAs FET that is internally matched for
standard communication bands to provide optimum power and gain in a
50 ohm system.

Fujitsu’s stringent Quality Assurance Program assures the highest
reliability and consistent performance.

FEATURES

• High Output Power: P

1dB

= 39.0dBm (Typ.)

• High Gain: G

1dB

= 7.5dB (Typ.)

• High PAE: η

add

= 29% (Typ.)

• Low IM3= -46dBc@Po = 28.5dBm

• Broad Band: 9.5 ~ 10.5GHz

• Impedance Matched Zin/Zout = 50Ω

2

FLM0910-8F

X, Ku-Band Internally Matched FET

OUTPUT POWER & IM3 vs. INPUT POWER

VDS=10V
f1 = 10.5 GHz
f2 = 10.51 GHz
2-tone test

16 18 20 22 24 26

Input Power (S.C.L.) (dBm)
S.C.L.: Single Carrier Level

27

29

31

33

25

23

-50

-40

-30

-20

Output Power (S.C.L.) (dBm)

IM

3

P

out

IM

3

(dBc)

POWER DERATING CURVE

20

10

40

50

30

0

50 100 150 200

Case Temperature (°C)

Total Power Dissipation (W)

OUTPUT POWER vs. FREQUENCY

9.5

Pin=32dBm

30dBm

28dBm

26dBm

10.510.0

Frequency (GHz)

34

35

36

37

38

39

40

Output Power (dBm)

VDS=10V
P

1dB

OUTPUT POWER vs. INPUT POWER

VDS=10V
f = 10.0 GHz

2420 22 26 28 30 32 34

Input Power (dBm)

30

32

34

36

38

40

28

20

30

40

10

Output Power (dBm)

η

add

P

out

η

add

(%)