Fujitsu FLM0910-8F Schematic [ru]

FLM0910-8F

X, Ku-Band Internally Matched FET

FEATURES

•High Output Power: P1dB = 39.0dBm (Typ.)

•High Gain: G1dB = 7.5dB (Typ.)

•High PAE: ηadd = 29% (Typ.)

•Low IM3 = -46dBc@Po = 28.5dBm

•Broad Band: 9.5 ~ 10.5GHz

•Impedance Matched Zin/Zout = 50Ω

DESCRIPTION

The FLM0910-8F is a power GaAs FET that is internally matched for standard communication bands to provide optimum power and gain in a 50 ohm system.

Fujitsu’s stringent Quality Assurance Program assures the highest reliability and consistent performance.

ABSOLUTE MAXIMUM RATING (Ambient Temperature Ta=25°C)

Item	Symbol	Condition	Rating	Unit
Drain-Source Voltage	VDS		15	V
Gate-Source Voltage	VGS		-5	V
Total Power Dissipation	PT	Tc = 25°C	42.8	W
Storage Temperature	Tstg		-65 to +175	°C
Channel Temperature	Tch		175	°C

Fujitsu recommends the following conditions for the reliable operation of GaAs FETs:

1.The drain-source operating voltage (VDS) should not exceed 10 volts.

2.The forward and reverse gate currents should not exceed 32.0 and -4.4 mA respectively with gate resistance of 100Ω.

ELECTRICAL CHARACTERISTICS (Ambient Temperature Ta=25°C)

	Item		Symbol	Test Conditions				Limit		Unit
							Min.	Typ.	Max.
	Saturated Drain Current		IDSS	VDS = 5V, VGS = 0V			-	3400	5200	mA
	Transconductance		gm	VDS = 5V, IDS = 2200mA			-	3400	-	mS
	Pinch-off Voltage		Vp	VDS = 5V, IDS = 170mA			-0.5	-1.5	-3.0	V
	Gate Source Breakdown Voltage		VGSO	IGS = -170 A			-5.0	-	-	V
	Output Power at 1dB G.C.P.		P1dB				38.5	39.0	-	dBm
	Power Gain at 1dB G.C.P.		G1dB	VDS =10V,			6.5	7.5	-	dB
				IDS = 0.65 IDSS (Typ.),
	Drain Current		Idsr				-	2200	2600	mA
				f =9.5 ~10.5 GHz,
	Power-added Efficiency		ηadd				-	29	-	%
				ZS=ZL= 50 ohm
	Gain Flatness		∆G				-	-	±0.6	dB
	3rd Order Intermodulation			f = 10.5 GHz, ∆f = 10 MHz
			IM3	2-Tone Test			-44	-46	-	dBc
	Distortion
				Pout = 28.5dBm S.C.L.
	Thermal Resistance		Rth	Channel to Case			-	3.0	3.5	°C/W
	Channel Temperature Rise		∆Tch	10V x I	x R	th	-	-	80	°C
				dsr
CASE STYLE: IB						G.C.P.: Gain Compression Point, S.C.L.: Single Carrier Level

Edition 1.2	1
August 1999

FLM0910-8F

X, Ku-Band Internally Matched FET

POWER DERATING CURVE

OUTPUT POWER & IM3 vs. INPUT POWER

	50
Dissipation (W)	40				(S.C.L.) (dBm)	33
						31
	30					29
Power	20				Power	27
						25
Total	10				Output
						23
	0	50	100	150	200

VDS=10V

f1 = 10.5 GHz f2 = 10.51 GHz 2-tone test

Pout

-20

-30

IM3

-40

-50

Case Temperature (°C)	16	18	20	22	24	26

Input Power (S.C.L.) (dBm)

S.C.L.: Single Carrier Level

IM3 (dBc)

OUTPUT POWER vs. FREQUENCY

	40		VDS=10V
				P1dB
(dBm)	39					Pin=32dBm
	38					30dBm
Power	37
						28dBm
Output	36
	35
						26dBm
	34
	9.5			10.0		10.5
				Frequency (GHz)

OUTPUT POWER vs. INPUT POWER

40VDS=10V

f = 10.0 GHz

(dBm)	38
Power	36
						Pout
	34
Output
	30
	32
								ηadd
	28
	20			22		24	26	28	30	32	34
						Input Power (dBm)

40
30	(%)
20	add
	η
10

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