Fujitsu 8050S Service manual

NPN TRANSISTOR 8050S

0.5A

 Power Dissipation: 0.625W

 Collector Current: 0.5A

 Collector-Base Voltage:: 45V

TO-92

MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS（Ta=25

PARAMETERS

Collector-Emitter Breakdown Voltage BVceo
Collector-Base Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector-Base Leakage
Collector-Emitter Leakage Iceo
Emitter-Base Leakage
Collector-Emitter Saturation Voltage
Base-Emiiter Saturation Voltage Vbe(sat)
DC Current Gain

Collector Current
Peak Collector Current
Current Gain Bandwidth f
Output Capacitance Cob
Power Dissipation
Junction Temperature Tj
Storage Temperature Tstg -55 150

Hfe1 Classification
Rank B C D
Range 85-160 120-200 160-300

STANSON TECHNOLOGY

120 Bentley Square, Mountain View, Ca 94040 USA

SYMBOL MIN TYP MAX UNIT

25

BVcbo
BVebo

Vce(sat

45

Icbo

Iebo

）

Hfe1
Hfe2

Ic

Icp

T

Pc

85
50

150

5

0.1

0.1 uA

0.1

0.6

1.2 V Ic=500mA, Ib=50mA

300

0.5 A
8 A(Pulse)
MHz Vcb=6V, Ic=20mA
32 pF Vcb=20V,Ie=0,f=1MHz

0.625 W
150

℃）

V
V
V

uA Vcb=40V

uA

V

Vce=1V,Ic=50mA

℃
℃

CONDITION

Ic=0.1mA
Ic=100

Ie=100μA

Vce=20V
Veb=5V

Ic=500mA, Ib=50mA

Vce=1V,Ic=500mA

u

A

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