Fujitsu 2SC3353 Service manual
TOSHIBA Transistor Silicon NPN Triple Diffused Type
2SC5354
2SC5354
High-Speed and High-Voltage Switching Applications
Switching Regulator Applications
High-Speed DC-DC Converter Applications
• Excellent switching times: t
t
• High breakdown voltage: V
Absolute Maximum Ratings
Characteristics Symbol Rating Unit
Collector-base voltage V
Collector-emitter voltage V
Emitter-base voltage V
Collector current
Base current I
Collector power dissipation
(Tc = 25°C)
Junction temperature T
Storage temperature range T
= 0.7 μs (max)
r
= 0.5 μs (max) (IC = 2 A)
f
= 800 V
CEO
(Tc = 25°C)
CBO
CEO
EBO
DC IC 5
Pulse I
8
CP
B
100 W
P
C
j
stg
900 V
800 V
7 V
2 A
150 °C
−55 to 150 °C
Unit: mm
A
JEDEC ―
JEITA ―
TOSHIBA 2-16C1A
Weight: 4.7 g (typ.)
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report
and estimated failure rate, etc).
1
2006-11-10
2SC5354
A
Electrical Characteristics
Characteristics Symbol Test Condition Min Typ. Max Unit
Collector cut-off current I
Emitter cut-off current I
Collector-base breakdown voltage V
Collector-emitter breakdown voltage V
DC current gain
Collector-emitter saturation voltage V
Base-emitter saturation voltage V
Rise time tr ― ― 0.7
Switching time
Storage time t
Fall time t
Marking
(Tc = 25°C)
VCB = 800 V, IE = 0 ― ― 100 μA
CBO
VEB = 7 V, IC = 0 ― ― 1 mA
EBO
(BR) CBOIC
(BR) CEOIC
h
VCE = 5 V, IC = 1 mA 10 ― ―
FE (1)
h
VCE = 5 V, IC = 0.5 A 15 ― ―
FE (2)
CE (sat) IC
BE (sat)
― ― 4.0
stg
f
= 1 mA, IE = 0 900 ― ― V
= 10 mA, IB = 0 800 ― ― V
= 2 A, IB = 0.4 A ― ― 1.0 V
IC = 2 A, IB = 0.4 A ― ― 1.3 V
≈ −360 V
V
CC
20 μs
B1
I
= 0.25 A, IB2 = −0.75 A,
I
B1
duty cycle ≤ 1%
IC = 2 A
Input
B2
I
I
B1
I
B2
180 Ω
Output
μs
― ― 0.5
TOSHIBA
C5354
Part No. (or abbreviation code)
Lot No.
line indicates
lead (Pb)-free package or
lead (Pb)-free finish.
2
2006-11-10
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