Fuji Electric 7MBR35VB120-50 Data Sheet

http://www.fujielectric.com/products/semiconductor/

7MBR35VB120-50

IGBT Modules

IGBT MODULE (V series)
1200V / 35A / PIM

Features

Low VCE(sat)
Compact Package
P.C.Board Mount Module
Converter Diode Bridge Dynamic Brake Circuit
RoHS compliant product

Applications

Inverter for Motor Drive
AC and DC Servo Drive Amplier
Uninterruptible Power Supply

Maximum Ratings and Characteristics

Absolute Maximum Ratings (at TC=25°C unless otherwise specied)

Items Symbols Conditions

Collector-Emitter voltage V

Gate-Emitter voltage V

Collector current

Inverter

Collector power dissipation P

Collector-Emitter voltage V

Gate-Emitter voltage V

Collector current

Brake

Collector power dissipation P

Repetitive peak reverse voltage (Diode) V

Repetitive peak reverse voltage V

Average output current I

Surge current (Non-Repetitive) I

2

Converter

I

t (Non-Repetitive) I

Junction temperature T

Operating junciton temperature
(under switching conditions)

Case temperature T

Storage temperature T

Isolation voltage

between terminal and copper base (*1)
between thermistor and others (*2)

CES 1200 V

GES ±20 V

I

C Continuous TC=100°C 35

I

cp 1ms TC=80°C 70

-I

C 35

-I

c pulse 1ms 70

C 1 device 210 W

CES 1200 V

GES ±20 V

I

C Continuous TC=80°C 25

I

CP 1ms TC =80°C 50

C 1 device 170 W

RRM 1200 V

RRM 1600 V

O 50Hz/60Hz, sine wave 35 A

FSM

2

t 338 A2s

j

jop

T

C 125

stg -40 ~ +125

10ms, Tj=150°C
half sine wave

Inverter, Brake 175

Converter 150

Inverter, Brake 150

Converter 150

Viso AC : 1min. 2500 VAC

Screw torque Mounting (*3) - M5 3.5 N m

Note *1: All terminals should be connected together during the test.
Note *2: Two thermistor terminals should be connec ted together, other terminals should be connected together and shorted to base plate during the test.
Note *3: Recommendable value : 2.5-3.5 Nm (M5)

Maximum

ratings

260 A

Units

°C

A

A

1

1389a

MARCH 2014

7MBR35VB120-50

3

IGBT Modules

http://www.fujielectric.com/products/semiconductor/

Electrical characteristics (at Tj= 25°C unless otherwise specied)

Items Symbols Conditions

Zero gate voltage collector current I

Gate-Emitter leakage current I

Gate-Emitter threshold voltage V

Collector-Emitter saturation voltage

CES VGE = 0V, VCE = 1200V - - 1.0 mA

GES VGE = 0V, VGE = ±20V - - 200 nA

GE (th) VCE = 20V, IC = 35mA 6.0 6.5 7.0 V

T

V

CE (sat)

(terminal)

CE (sat)

V
(chip)

VGE = 15V
IC = 35A

VGE = 15V
IC = 35A

j=25°C - 2.20 2.65

T

j=125°C - 2.55 -

T

j=150°C - 2.60 -

T

j=25°C - 1.85 2.30

T

j=125°C - 2.20 -

T

j=150°C - 2.25 -

Internal gate resistance Rg(int) - - 0 - Ω

Input capacitance C

Inverter

Turn-on time

Turn-off time

Forward on voltage

Reverse recovery time t

Zero gate voltage collector current I

Gate-Emitter leakage current I

Collector-Emitter saturation voltage

Brake

ies VCE

t

on

t

r - 0.09 0.60

t

r (i) - 0.03 -

t

off - 0.53 1.00

t

f - 0.06 0.30

V

F

(terminal)

F

V
(chip)

rr IF = 35A - - 0.35 µs

CES

GES

CE (sat)

V
(terminal)

CE (sat)

V
(chip)

= 10V, VGE = 0V, f = 1MHz - 2.9 - nF

VCC = 600V
IC = 35A
VGE = +15 / -15V
RG = 27Ω

j=25°C - 2.05 2.50

T

F = 35A

I

F = 35A

I

T

j=125°C - 2.20 -

T

j=150°C - 2.15 -

j=25°C - 1.70 2.15

T

T

j=125°C - 1.85 -

T

j=150°C - 1.80 -

VGE = 0V
VCE = 1200V

VCE = 0V
VGE = +20 / -20V

T

VGE = 15V
IC = 25A

VGE = 15V
IC = 25A

j=25°C - 2.10 2.55

T

j=125°C - 2.45 -

T

j=150°C - 2.50 -

T

j=25°C - 1.85 2.30

T

j=125°C - 2.20 -

T

j=150°C - 2.25 -

Internal gate resistance Rg(int) - - 0 - Ω

t

Turn-on time

Turn-off time

Reverse current I

Forward on voltage

Converter

Reverse current I

on

t

r - 0.09 0.60

t

off - 0.53 1.00

t

f - 0.06 0.30

RRM VR = 1200V - - 1.00 mA

FM

V
(chip)

RRM VR = 1600V - - 1.0 mA

Resistance R

Thermistor

B value B T = 25 / 50°C

VCE = 600V
IC = 25A
VGE = +15 / -15V
RG = 39Ω

F = 35A

I

terminal - 1.70 2.15

chip - 1.35 -

T = 25°C - 5000 -

T = 100°C 465 495 520

Characteristics

min. typ. max.

- 0.39 1.20

- - 1.0 mA

- - 200 nA

- 0.39 1.20

3305 3375 3450 K

Units

V

µs

V

V

µs

V

Ω

Thermal resistance characteristics

Items Symbols Conditions

Inverter IGBT - - 0.72

Thermal resistance (1device) R

Contact thermal resistance (1device) (*4) R

th(j- c)

th(c-f) with Thermal Compound - 0.05 -

Note *4: This is the value which is dened mounting on the additional cooling n with thermal compound.

Inverter FWD - - 0.91

Brake IGBT - - 0.89

Converter Diode - - 0.88

2

Characteristics

min. typ. max.

Units

°C/W

7MBR35VB120-50

8

Characteristics (Representative)

IGBT Modules

http://www.fujielectric.com/products/semiconductor/

[ Inverter ]

Collector current vs. Collector-Emitter voltage (typ.)

j= 25°C / chip

T

70

=20V 15V

V

60

GE

12V

50

40

30

20

Collector current: IC [A]

10

0

0 1 2 3 4 5

Collector-Emitter voltage: VCE[V]

[ Inverter ]

Collector current vs. Collector-Emitter voltage (typ.)

GE=15V / chip

V

70

T

60

j=25°C

[A]

50

40

30

j=125°C

T

Tj=150°C

10V

V

[ Inverter ]

Collector current vs. Collector-Emitter voltage (typ.)

j= 150°C / chip

T

70

60

=20V

V

GE

15V

12V

50

40

30

10V

20

Collector current: IC [A]

10

0

0 1 2 3 4 5

Collector-Emitter voltage: V

8V

CE[V]

[ Inverter ]

Collector-Emitter voltage vs. Gate-Emitter voltage (typ.)

j= 25°C / chip

T

8

CE [V]

6

4

20

Collector current: IC

10

0

0 1 2 3 4 5

Collector-Emitter voltage: V

CE[V]

[ Inverter ]

Capacitance vs. Collector-Emitter voltage (typ.)

V

GE=0V, f= 1MHz, Tj= 25°C

10.0

ies

C

1.0

Cres

0.1

Coes

Capacitance: Cies, Coes, Cres [nF]

0.0
0 10 20 30

Collector - Emitter voltage: VCE [V]

2

I
I
I

Collector - Emitter voltage: V

0

5 10 15 20 25

Gate - Emitter voltage: V

GE [V]

[ Inverter ]

Dynamic gate charge (typ.)

CC=600V, IC=35A, Tj= 25°C

V

VCE

GE [5V/div]

0

Gate - Emitter voltage: V

Collector - Emitter voltage: VCE [200V/div]

V

Gate charge: QG [nC]

C=70A
C=35A
C=18A

GE

0040004-

3

7MBR35VB120-50

5

IGBT Modules

http://www.fujielectric.com/products/semiconductor/

Switching time : ton, tr, toff, tf [ nsec ]

[ Inverter ]

Switching time vs. Collector current (typ.)

CC=600V, VGE=±15V, RG=27Ω, Tj= 125°C

V

10000

1000

100

off

t

t

on

tr

tf

10

0 20 40 60 80

Collector current: IC [A]

[ Inverter ]

Switching time vs. gate resistance (typ.)

V

CC=600V, IC=35A, VGE=±15V, Tj= 125°C

10000

[ Inverter ]

Switching time vs. Collector current (typ.)

V

CC=600V, VGE=±15V, RG=27Ω, Tj= 150°C

10000

1000

off

t

ton

tr

100

tf

Switching time : ton, tr, toff, tf [ nsec ]

10

0 20 40 60 80

Collector current: I

[ Inverter ]

Switching loss vs. Collector current (typ.)

CC=600V, VGE=±15V, RG=27Ω

V

10

C [A]

E

8

1000

6

on, Eoff, Err [mJ/pulse ]

4

100

toff

ton

r

t
tf

2

Switching time : ton, tr, toff, tf [ nsec ]

10

00101

Gate resistance : R

G [Ω]

[ Inverter ]

Switching loss vs. gate resistance (typ.)

CC=600V, IC=35A, VGE=±15V

V

7

6

5

4

3

2

1

0

Switching loss : Eon, Eoff, Err [mJ/pulse]

Gate resistance : R

G [Ω]

E

on(150°C)

E

on(125°C)

off(150°C)

E

off(125°C)

E

rr(150°C)

E

Err(125°C)

00101

0

Switching loss : E

0 25 50 75 100

Collector current: IC [A]

[ Inverter ]

Reverse bias safe operating area (max.)

+V

GE=15V,-VGE <= 15V, RG >= 27Ω ,Tj = 150°C

100

90

80

70

60

50

40

RBSOA
(Repetitive pulse)

30

Collector current: IC [A]

20

10

0

0 400 800 1200

Collector-Emitter voltage : VCE [V]

on(150°C)

on(125°C)

E
E

off(150°C)

off(125°C)

E

rr(150°C)

E

E

rr(125°C)

(Main terminals)

4

7MBR35VB120-50

IGBT Modules

http://www.fujielectric.com/products/semiconductor/

[ Inverter ]

Forward current vs. forward on voltage (typ.)

chip

70

60

50

40

30

20

T

j=25°C

T

j=125°C

Tj=150°C

Forward current : IF [A]

10

0

0 1 2 3 4 5

Forward on voltage : VF [V]

[ Converter ]

Forward current vs. forward on voltage (typ.)

chip

70

60

j=125°CTj=25°C

T

[ Inverter ]

Reverse recovery characteristics (typ.)

V

CC=600V, VGE=±15V, RG=27Ω

1000

t

F [A]

rr(150°C)

t

rr(125°C)

rr(150°C)

I
I

rr(125°C)

rr [ nsec ]

100

10

Reverse recovery current : Irr [ A ]

Reverse recovery time : t

1

0 25 50 75 100

Forward current : I

50

40

30

20

Forward current : IF [A]

10

0

0 1 2 3 4

Forward on voltage : V

FM [V]

Transient thermal resistance (max.)

10.00

FWD[Inverter]

1.00

4

0.10

n 1 2 3 4

τ

[sec] 0.0023 0.0301 0.0598 0.0708

n

r

IGBT 0.07723 0.19580 0.27661 0.17036

n

[°C/W] FW D 0.09761 0.24747 0.34960 0.21532

B-IGBT 0.09546 0.24203 0.34192 0.21059

Thermal resistanse : Rth(j-c) [ °C/W ]

0.01

Conv 0.09439 0.23931 0.33808 0.20822

0.001 0.010 0.100 1.000

Pulse width : P

n

W [sec]

IGBT[Brake]
Conv. Diode

IGBT[Inverter]

1

erZth

n

1

[ Thermistor ]

Temperature characteristic (typ.)

100

10

t

n

1

Resistance : R [kΩ]

0.1

-60 -40 -20 0 20 40 60 80 100 120 140 160 180

Temperature [°C ]

5

7MBR35VB120-50

7

IGBT Modules

http://www.fujielectric.com/products/semiconductor/

[ Brake ]

Collector current vs. Collector-Emitter voltage (typ.)

o

j= 25

C / chip

T

50

=20V

V

GE

15V

40

30

20

Collector current: IC [A]

10

0

0 1 2 3 4 5

Collector-Emitter voltage: VCE[V]

[ Brake ]

Collector current vs. Collector-Emitter voltage (typ.)

GE=15V / chip

V

50

j=25°C

T

Tj=150°C

40

[A]

j=125°C

30

20

T

12V

10V

8V

[ Brake ]

Collector current vs. Collector-Emitter voltage (typ.)

T

j= 150°C / chip

50

=20V

V

GE

15V

40

12V

30

20

Collector current: IC [A]

10

10V

8V

0

0 1 2 3 4 5

Collector-Emitter voltage: V

CE[V]

[ Brake ]

Collector-Emitter voltage vs. Gate-Emitter voltage (typ.)

j= 25°C / chip

T

8

CE [V]

6

4

Collector current: IC

10

0

0 1 2 3 4 5

Collector-Emitter voltage: V

CE[V]

[ Brake ]

Capacitance vs. Collector-Emitter voltage (typ.)

V

GE=0V, f= 1MHz, Tj= 25°C

10.0

C

ies

1.0

Cres

0.1
Coes

Capacitance: Cies, Coes, Cres [nF]

0.0

0 10 20 30

Collector - Emitter voltage: V

CE [V]

C=50A

2

I
I

C=25A

I

C=13A

Collector - Emitter voltage: V

0

5 10 15 20 25

Gate - Emitter voltage: VGE [V]

[ Brake ]

Dynamic gate charge (typ.)

CC=600V, IC=25A, Tj= 25°C

V

VCE

0

Gate - Emitter voltage: VGE [5V/div]

Collector - Emitter voltage: VCE [200V/div]

Gate charge: QG [nC]

GE

V

0030003-

6

7MBR35VB120-50

Outline Drawings (Unit : mm)

IGBT Modules

http://www.fujielectric.com/products/semiconductor/

Equivalent Circuit

[ Converter ] [ Brake ] [ Inverter ] [ Thermistor ]

2(S) 3(T)1(R)

21(P)

23(N)

22(P1)

7(B)

14(Gb)

24(N1)

20
(Gu)

19(Eu)

13(Gx)

18
(Gv)

17(Ev)

4(U)

12(Gy) 11(Gz)

5(V)

Weight: 300g(typ.)

16
(Gw)

15(Ew)

6(W)

98

10(En)

7

7MBR35VB120-50

IGBT Modules

http://www.fujielectric.com/products/semiconductor/

WARNING

1. This Catalog contains the product specications, characteristics, data, materials, and structures as of March 2014.
The contents are subject to change without notice for specication changes or other reasons. When using a product listed in this Catalog,
be sur to obtain the latest specications.

2. All applications described in this Catalog exemplif y the use of Fuji's products for your reference only. No right or license, either express or
implied, under any patent, copyright, trade secret or other intellectual property right owned by Fuji Electric Co., Ltd. is (or shall be deemed)
granted. Fuji Electric Co., Ltd. makes no representation or warranty, whether express or implied, relating to the infringement or alleged
infringement of other's intellectual property rights which may arise from the use of the applications described herein.

3. Although Fuji Electric Co., Ltd. is enhancing product qualit y and reliabilit y, a small perc entage of semiconductor products may become
faulty. When using Fuji Electric semiconductor products in your equipment, you are requested to take adequate safety measures to prevent
the equipment from causing a physical injur y, re, or other problem if any of the products become faulty. It is recommended to make your
design failsafe, ame retardant, and free of malfunction.

4. The products introduced in this Catalog are intended for use in the following electronic and electrical equipment which has normal reliability
requirements.

• Computers • OA equipment • C ommunications equipment (terminal devices) • Measurement equipment

• Machine tools • Audiovisual equipment • Electrical home appliances • Personal equipment • Industrial robots etc.

5. If you need to use a product in this Catalog for equipment requiring higher reliability than normal, such as for the equipment listed below,
it is imperative to contact Fuji Electric Co., Ltd. to obtain prior approval. When using these products for such equipment, take adequate
measures such as a backup system to prevent the equipment from malfunctioning even if a Fuji's product incorporated in the equipment
becomes faulty.

• Transportation equipment (mounted on cars and ships) • Trunk communications equipment

• Trafc-signal control equipment • Gas leakage detectors with an auto- shut- off feature

• Emergency equipment for responding to disasters and anti-burglar y devices • Safety devices

• Medical equipment

6. Do not use products in this Catalog for the equipment requir ing strict reliabilit y such as the following and equivalents to strategic equipment
(without limitation).

• Space equipment • Aeronautic equipment • Nuclear control equipment

• Submarine repeater equipment

7. Copyright ©1996-2014 by Fuji Electric Co., Ltd. A ll rights reserved.

No part of this Catalog may be reproduced in any form or by any means without the express permission of Fuji Electric Co., Ltd.

8. If you have any question about any portion in this Catalog, ask Fuji Electric Co., Ltd. or its sales agents before using the product.
Neither Fuji Electric Co., Ltd. nor its agents shall be liable for any injury caused by any use of the products not in accordance with
instructions set forth herein.

8

Technical Information

Please refer to URLs below for futher information about products, application manuals and technical documents.

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8

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9

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10

Revised and discontinued product information www.fujielectric.com/products/semiconductor/discontinued/

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2015 -10