Fuji Electric 7MBR35VB120-50 Data Sheet
http://www.fujielectric.com/products/semiconductor/
7MBR35VB120-50
IGBT Modules
IGBT MODULE (V series)
1200V / 35A / PIM
Features
Low VCE(sat)
Compact Package
P.C.Board Mount Module
Converter Diode Bridge Dynamic Brake Circuit
RoHS compliant product
Applications
Inverter for Motor Drive
AC and DC Servo Drive Amplier
Uninterruptible Power Supply
Maximum Ratings and Characteristics
Absolute Maximum Ratings (at TC=25°C unless otherwise specied)
Items Symbols Conditions
Collector-Emitter voltage V
Gate-Emitter voltage V
Collector current
Inverter
Collector power dissipation P
Collector-Emitter voltage V
Gate-Emitter voltage V
Collector current
Brake
Collector power dissipation P
Repetitive peak reverse voltage (Diode) V
Repetitive peak reverse voltage V
Average output current I
Surge current (Non-Repetitive) I
2
Converter
I
t (Non-Repetitive) I
Junction temperature T
Operating junciton temperature
(under switching conditions)
Case temperature T
Storage temperature T
Isolation voltage
between terminal and copper base (*1)
between thermistor and others (*2)
CES 1200 V
GES ±20 V
I
C Continuous TC=100°C 35
I
cp 1ms TC=80°C 70
-I
C 35
-I
c pulse 1ms 70
C 1 device 210 W
CES 1200 V
GES ±20 V
I
C Continuous TC=80°C 25
I
CP 1ms TC =80°C 50
C 1 device 170 W
RRM 1200 V
RRM 1600 V
O 50Hz/60Hz, sine wave 35 A
FSM
2
t 338 A2s
j
jop
T
C 125
stg -40 ~ +125
10ms, Tj=150°C
half sine wave
Inverter, Brake 175
Converter 150
Inverter, Brake 150
Converter 150
Viso AC : 1min. 2500 VAC
Screw torque Mounting (*3) - M5 3.5 N m
Note *1: All terminals should be connected together during the test.
Note *2: Two thermistor terminals should be connec ted together, other terminals should be connected together and shorted to base plate during the test.
Note *3: Recommendable value : 2.5-3.5 Nm (M5)
Maximum
ratings
260 A
Units
°C
A
A
1
1389a
MARCH 2014
7MBR35VB120-50
3
IGBT Modules
http://www.fujielectric.com/products/semiconductor/
Electrical characteristics (at Tj= 25°C unless otherwise specied)
Items Symbols Conditions
Zero gate voltage collector current I
Gate-Emitter leakage current I
Gate-Emitter threshold voltage V
Collector-Emitter saturation voltage
CES VGE = 0V, VCE = 1200V - - 1.0 mA
GES VGE = 0V, VGE = ±20V - - 200 nA
GE (th) VCE = 20V, IC = 35mA 6.0 6.5 7.0 V
T
V
CE (sat)
(terminal)
CE (sat)
V
(chip)
VGE = 15V
IC = 35A
VGE = 15V
IC = 35A
j=25°C - 2.20 2.65
T
j=125°C - 2.55 -
T
j=150°C - 2.60 -
T
j=25°C - 1.85 2.30
T
j=125°C - 2.20 -
T
j=150°C - 2.25 -
Internal gate resistance Rg(int) - - 0 - Ω
Input capacitance C
Inverter
Turn-on time
Turn-off time
Forward on voltage
Reverse recovery time t
Zero gate voltage collector current I
Gate-Emitter leakage current I
Collector-Emitter saturation voltage
Brake
ies VCE
t
on
t
r - 0.09 0.60
t
r (i) - 0.03 -
t
off - 0.53 1.00
t
f - 0.06 0.30
V
F
(terminal)
F
V
(chip)
rr IF = 35A - - 0.35 µs
CES
GES
CE (sat)
V
(terminal)
CE (sat)
V
(chip)
= 10V, VGE = 0V, f = 1MHz - 2.9 - nF
VCC = 600V
IC = 35A
VGE = +15 / -15V
RG = 27Ω
j=25°C - 2.05 2.50
T
F = 35A
I
F = 35A
I
T
j=125°C - 2.20 -
T
j=150°C - 2.15 -
j=25°C - 1.70 2.15
T
T
j=125°C - 1.85 -
T
j=150°C - 1.80 -
VGE = 0V
VCE = 1200V
VCE = 0V
VGE = +20 / -20V
T
VGE = 15V
IC = 25A
VGE = 15V
IC = 25A
j=25°C - 2.10 2.55
T
j=125°C - 2.45 -
T
j=150°C - 2.50 -
T
j=25°C - 1.85 2.30
T
j=125°C - 2.20 -
T
j=150°C - 2.25 -
Internal gate resistance Rg(int) - - 0 - Ω
t
Turn-on time
Turn-off time
Reverse current I
Forward on voltage
Converter
Reverse current I
on
t
r - 0.09 0.60
t
off - 0.53 1.00
t
f - 0.06 0.30
RRM VR = 1200V - - 1.00 mA
FM
V
(chip)
RRM VR = 1600V - - 1.0 mA
Resistance R
Thermistor
B value B T = 25 / 50°C
VCE = 600V
IC = 25A
VGE = +15 / -15V
RG = 39Ω
F = 35A
I
terminal - 1.70 2.15
chip - 1.35 -
T = 25°C - 5000 -
T = 100°C 465 495 520
Characteristics
min. typ. max.
- 0.39 1.20
- - 1.0 mA
- - 200 nA
- 0.39 1.20
3305 3375 3450 K
Units
V
µs
V
V
µs
V
Ω
Thermal resistance characteristics
Items Symbols Conditions
Inverter IGBT - - 0.72
Thermal resistance (1device) R
Contact thermal resistance (1device) (*4) R
th(j- c)
th(c-f) with Thermal Compound - 0.05 -
Note *4: This is the value which is dened mounting on the additional cooling n with thermal compound.
Inverter FWD - - 0.91
Brake IGBT - - 0.89
Converter Diode - - 0.88
2
Characteristics
min. typ. max.
Units
°C/W
7MBR35VB120-50
8
Characteristics (Representative)
IGBT Modules
http://www.fujielectric.com/products/semiconductor/
[ Inverter ]
Collector current vs. Collector-Emitter voltage (typ.)
j= 25°C / chip
T
70
=20V 15V
V
60
GE
12V
50
40
30
20
Collector current: IC [A]
10
0
0 1 2 3 4 5
Collector-Emitter voltage: VCE[V]
[ Inverter ]
Collector current vs. Collector-Emitter voltage (typ.)
GE=15V / chip
V
70
T
60
j=25°C
[A]
50
40
30
j=125°C
T
Tj=150°C
10V
V
[ Inverter ]
Collector current vs. Collector-Emitter voltage (typ.)
j= 150°C / chip
T
70
60
=20V
V
GE
15V
12V
50
40
30
10V
20
Collector current: IC [A]
10
0
0 1 2 3 4 5
Collector-Emitter voltage: V
8V
CE[V]
[ Inverter ]
Collector-Emitter voltage vs. Gate-Emitter voltage (typ.)
j= 25°C / chip
T
8
CE [V]
6
4
20
Collector current: IC
10
0
0 1 2 3 4 5
Collector-Emitter voltage: V
CE[V]
[ Inverter ]
Capacitance vs. Collector-Emitter voltage (typ.)
V
GE=0V, f= 1MHz, Tj= 25°C
10.0
ies
C
1.0
Cres
0.1
Coes
Capacitance: Cies, Coes, Cres [nF]
0.0
0 10 20 30
Collector - Emitter voltage: VCE [V]
2
I
I
I
Collector - Emitter voltage: V
0
5 10 15 20 25
Gate - Emitter voltage: V
GE [V]
[ Inverter ]
Dynamic gate charge (typ.)
CC=600V, IC=35A, Tj= 25°C
V
VCE
GE [5V/div]
0
Gate - Emitter voltage: V
Collector - Emitter voltage: VCE [200V/div]
V
Gate charge: QG [nC]
C=70A
C=35A
C=18A
GE
0040004-
3
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