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7MBR35UA120
IGBT MODULE (U series)
1200V / 35A / PIM
Features
· Low VCE(sat)
· Compact Package
· P.C. Board Mount Module
· Converter Diode Bridge Dynamic Brake Circuit
Applications
· Inverter for Motoe Drive
· AC and DC Servo Drive Amplifier
· Uninterruptible Power Supply
IGBT Modules
Maximum ratings and characteristics
Absolute maximum ratings (T c=25°C unless otherwise specified)
Item Symbol Condition Rating Unit
Collector-Emitter voltage
Gate-Emitter voltage
Collector current
Collector power disspation
Collector-Emitter voltage
Gate-Emitter voltage
Collector current
Collector power disspation
Repetitive peak reverse voltage
Repetitive peak reverse voltage
Average output current
Surge current (Non-Repetitive)
Converter Brake Inverter
I2t (Non-Repetitive)
Operating junction temperature
Storage temperature
Isolation between terminal and copper base *2
voltage between thermistor and others *3
Mounting screw torque
*1 Recommendable value : 2.5 to 3.5 N·m (M5)
*2 All terminals should be connected together when isolation test will be done.
*3 Two thermistor terminals should be connected together, each other terminals should be
connected together and shorted to base plate when isolation test will be done.
VCES
VGES
IC
ICP
-IC
-IC pulse
PC
VCES
VGES
IC
ICP
PC
VRRM
VRRM
IO
IFSM
I2t
Tj
Tstg
Viso
Continuous
1ms
1ms
1 device
Continuous
1ms
1 device
50Hz/60Hz sine wave
Tj=150°C, 10ms
half sine wave
AC : 1 minute
Tc=25°C
Tc=80°C
Tc=25°C
Tc=80°C
Tc=25°C
Tc=80°C
Tc=25°C
Tc=80°C
1200
±20
35
25
70
50
35
70
160
1200
±20
25
15
50
30
115
1200
1600
35
260
338
+150
-40 to +125
AC 2500
AC 2500
3.5 *1
V
V
A
W
V
V
A
W
V
V
A
A
A2s
°C
°C
V
N·m
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IGBT Module
7MBR35UA120
Electrical characteristics (Tj=25°C unless otherwise specified)
Item Symbol Condition Characteristics Unit
Min. Typ. Max.
Zero gate voltage collector current
Gate-Emitter leakage current
Gate-Emitter threshold voltage
Collector-Emitter saturation voltage
Input capacitance
Turn-on time
Turn-off time
Forward on voltage
Reverse recovery time
Zero gate voltage collector current
Gate-Emitter leakage current
Collector-Emitter saturation voltage
Turn-on time
Turn-off time
Reverse current
Forward on voltage
Reverse current
Resistance
B value
Thermistor Converter Brake Inverter
ICES
IGES
VGE(th)
VCE(sat)
(terminal)
VCE(sat)
(chip)
Cies
ton
tr
tr(i)
toff
tf
VF
(terminal)
VF
(chip)
trr
ICES
IGES
VCE(sat)
(terminal)
VCE(sat)
(chip)
ton
tr
toff
tf
IRRM
VFM
IRRM
R
B
VCE=1200V, VGE=0V
VCE=0V, VGE=±20V
VCE=20V, IC=35mA
VGE=15V
Ic=35A
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
V
GE=0V, VCE=10V, f=1MHz
VCC=600V
IC=35A
VGE=±15V
RG= 43 Ω
VGE= 0 V
IF=35A
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
IF=35A
VCE=1200V, VGE=0V
VCE=0V, VGE=±20V
IC=25A
VGE=15V
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
VCC=600V
IC=25A
VGE=±15V
RG= 68 Ω
VR=1200V
IF=35 A terminal
VGE=0V chip
VR=1600V
T=25°C
T=100°C
T=25/50°C
- - 1.0
- - 200
4.5 6.5 8.5
- 2.25 2.70
- 2.60 -
- 1.95 2.40
- 2.30 -
-3 -
- 0.53 1.20
- 0.43 0.60
- 0.03 -
- 0.37 1.00
- 0.07 0.30
- 2.05 2.40
- 2.20 -
- 1.75 2.10
- 1.90 -
- - 0.35
- - 1.0
- - 200
- 2.40 2.90
- 2.85 -
- 2.10 2.60
- 2.55 -
- 0.53 1.20
- 0.43 0.60
- 0.37 1.00
- 0.07 0.30
- - 1.0
- 1.35 1.70
- 1.25 -
- - 1.0
- 5000 -
465 495 520
3305 3375 3450
mA
nA
V
V
nF
µs
V
µs
mA
nA
V
µs
mA
V
mA
Ω
K
Thermal resistance Characteristics
Item Symbol Condition Characteristics Unit
Min. Typ. Max.
Inverter IGBT
Thermal resistance ( 1 device ) Rth(j-c)
Inverter FWD
Brake IGBT
Converter Diode
Contact thermal resistance * Rth(c-f)
* This is the value which is defined mounting on the additional cooling fin with thermal compound
With thermal compound
- - 0.76
- - 1.19
- - 1.07 °C/W
- - 0.90
- 0.05 -
Equivalent Circuit Schematic
1(R)
[Converter]
2(S) 3(T)
21(P)
23(N)
22(P1)
7(B)
[Brake] [Inverter]
14(Gb)
24(N1)
20(Gu)
19(Eu)
13(Gx)
18(Gv)
4(U)
12(Gy)
17(Ev)
16(Gw)
15(Ew)
5(V) 6(W)
11(Gz)
[Thermistor]
89
10(En)
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IGBT Module
C
ll
I
[A]
Characteristics (Representative)
[ Inverte r ] [ Inverte r ]
Collector current vs. Collector-Emitter voltage (typ.)
Tj= 25°C / chip
60
50
VGE=20V
15V
12V
7MBR35UA120
Collector current vs. Collector-Emitter voltage (typ.)
Tj= 125°C / chip
60
50
VGE=20V 15V 12V
c
40
30
ector current :
20
o
10
0
012345
Collector-Emitter voltage : VCE [V]
[ Inverte r ] [ Inverte r ]
Collector current vs. Collector-Emitter voltage (typ.)
VGE=15V / chip
60
50
40
30
20
Collector current : Ic [A]
10
Tj=25°C
Tj=125°C
10V
8V
40
30
20
Collector current : Ic [A]
10
0
012345
Collector-Emitter voltage : VCE [V]
Collector-Emitter voltage vs. Gate-Emitter voltage (typ.)
Tj=25°C / chip
10
8
6
4
2
Collector - Emitter voltage : VCE [ V ]
Ic=50A
Ic=25A
Ic= 12.5A
10V
8V
0
012345
Collector-Emitter voltage : VCE [V]
[ Inverte r ] [ Inverte r ]
Capacitance vs. Collector-Emitter voltage (typ.)
VGE=0V, f= 1MHz, Tj= 25°C
10.0
Cies
1.0
Coes
Cres
Capacitance : Cies, Coes, Cres [ nF ]
0.1
0102030
Collector-Emitter voltage : VCE [V]
0
5 10152025
Gate - Emitter voltage : VGE [ V ]
Dynamic Gate charge (typ.)
Vcc=600V, Ic=35A, Tj= 25°C
VGE
Gate - Emitter voltage : VGE [ 5V/div ]
Collector-Emitter voltage : VCE [ 200V/div ]
0
0 30 60 90 120 150
Gate charge : Qg [ nC ]
VCE
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IGBT Module 7MBR35UA120
[ Inverte r ] [ Inverte r ]
Switching time vs. Collector current (typ.)
Vcc=600V, VGE=±15V, Rg=43Ω, Tj= 25°C
10000
Switching time vs. Collector current (typ.)
Vcc=600V, VGE=±15V, Rg=43Ω, Tj=125°C
10000
1000
100
Switching time : ton, tr, toff, tf [ nsec ]
10
01020304050
Collector current : Ic [ A ]
[ Inverte r ] [ Inverte r ]
Switching time vs. Gate resistance (typ.)
Vcc=600V, Ic=35A, VGE=±15V, Tj= 25°C
10000
1000
100
Switching time : ton, tr, toff, tf [ nsec ]
10
10.0 100.0 1000.0
Gate resistance : Rg [ Ω ]
ton
tr
toff
tf
tr
ton
toff
1000
100
Switching time : ton, tr, toff, tf [ nsec ]
10
0 1020304050
Collector current : Ic [ A ]
toff
ton
tr
tf
Switching loss vs. Collector current (typ.)
Vcc=600V, VGE=±15V, Rg=43
14
12
10
8
6
tf
4
2
Switching loss : Eon, Eoff, Err [ mJ/pulse ]
0
0 102030405060
Collector current : Ic [ A ]
Ω
Eon(125°C)
Eon(25°C)
Eoff(125°C)
Eoff(25°C)
Err(125°C)
Err(25°C)
[ Inverte r ] [ Inverte r ]
Switching loss vs. Gate resistance (typ.)
Vcc=600V, Ic=35A, VGE=±15V, Tj= 125°C
20
15
10
5
Switching loss : Eon, Eoff, Err [ mJ/pulse ]
0
10.0 100.0 1000.0
Gate resistance : Rg [ Ω ]
Eon
Eoff
Err
Reverse bias safe operating area (max.)
+VGE=15V,-VGE <= 15V, RG >= 43Ω ,Tj <= 125°C
80
60
40
Collector current : Ic [ A ]
20
0
0 400 800 1200
Collector - Emitter voltage : VCE [ V ]
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IGBT Module 7MBR35UA120
[ Inverter ] [ Inverter ]
Forward current vs. Forward on voltage (ty p .)
chip
60
1000
Reverse recovery characteristics (typ.)
Vcc=600V, VGE=±15V, Rg=43
Ω
50
40
30
20
Forward current : IF [ A ]
10
0
01234
Tj=25°C
Tj=125°C
Forward on voltage : VF [ V ]
[ Converter ]
Forward current vs. Forward on voltage (ty p .)
chip
60
50
Tj=25°C
40
Tj=125°C
100
Reverse recovery current : Irr [ A ]
Reverse recovery time : trr [ nsec ]
10
0 1020 3040 50
Forward current : IF [ A ]
trr (125°C)
trr (25°C)
Irr (125°C)
Irr (25°C)
30
20
Forward current : IF [ A ]
10
0
0.0 0.5 1.0 1.5 2.0
Forward on voltage : VFM [ V ]
Transient t hermal res ist ance (max.)
10.000
1.000
0.100
Thermal resistanse : Rth(j-c) [ °C/W ]
FW D[Inv erte r]
IGBT [Brak e]
Conv.Diode
IGBT [Inv erter]
[ Thermistor ]
Temp erature characterist ic (t y p .)
100
10
Resistance : R [ kΩ ]
1
0.010
0.001 0.010 0.100 1.000
Pulse width : P w [ sec ]
0.1
-60 -40 -20 0 20 40 60 80 100 120 140 160 180
Temperature [°C ]
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IGBT Module
0
Collector current vs. Collector-Emitter voltage (typ.)
40
[ Brake ] [ Brake ]
Collector current vs. Collector-Emitter voltage (typ.)
Tj= 25°C / chip
40
Tj= 125°C / chip
7MBR35UA120
30
20
Collector current : Ic [A]
10
0
012345
VGE=20V 15V
Collector-Emitter voltage : VCE [V]
12V
[ Brake ] [ Brake ]
Collector current vs. Collector-Emitter voltage (typ.)
VGE=15V / chip Tj=25°C / chip
40
30
20
Tj=25°C
Tj=125°C
10V
8V
30
20
Collector current : Ic [A]
10
0
012345
VGE=20V 15V 12V
Collector-Emitter voltage : VCE [V]
Collector-Emitter voltage vs. Gate-Emitter voltage (typ.)
10
8
6
4
10V
8V
Collector current : Ic [A]
10
0
012345
Collector-Emitter voltage : VCE [V]
[ Brake ] [ Brake ]
Capacitance vs. Collector-Emitter voltage (typ.)
VGE=0V, f= 1MHz, Tj= 25°C
10.0
Cies
1.0
Coes
Capacitance : Cies, Coes, Cres [ nF ]
0.1
0 102030
Collector-Emitter voltage : VCE [V]
Cres
2
Collector - Emitter voltage : VCE [ V ]
0
5 10152025
Gate - Emitter voltage : VGE [ V ]
Ic=30A
Ic=15A
Ic=7.5A
Dynamic Gate charge (typ.)
Vcc=600V, Ic=25A, Tj= 25°C
VGE
Gate - Emitter voltage : VGE [ 5V/div ]
Collector-Emitter voltage : VCE [ 200V/div ]
0306090
Gate charge : Qg [ nC ]
VCE
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IGBT Module 7MBR35UA120
Outline Drawings, mm
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