Fuji Electric 7MBR10NF120 Data Sheet
7MBR10NF120
IGBT MODULE
1200V / 10A / PIM
Features
· High Speed Switching
· Voltage Drive
· Low Inductance Module Structure
· Converter Diode Bridge Dynamic Brake Circuit
Applications
· Inverter for Motoe Drive
· AC and DC Servo Drive Amplifier
· Uninterruptible Power Supply
IGBT Modules
Maximum ratings and characteristics
Absolute maximum ratings (Tc=25°C unless without specified)
Item Symbol Condition Rating Unit
Collector-Emitter voltage
Gate-Emitter voltage
DC
Collector current
Collector power disspation
Collector-Emitter voltage
Gate-Emitter voltage
Collector current
Collector power disspation
Repetitive peak reverse voltage
Average forward current
Surge current
Repetitive peak reverse voltage
Non-Repetitive peak reverse voltage
Average output current
Surge current (Non-Repetitive)
Converter Brake Inverter
I²t (Non-Repetitive)
Operating junction temperature
Storage temperature
Isolation voltage
Mounting screw torque
*1 Recommendable value : 1.3 to 1.7 N·m (M4)
1ms
DC
1 device
DC
1ms
1 device
VCES
VGES
IC
ICP
-IC
PC
VCES
VGES
IC
ICP
PC
VRRM
IF(AV)
IFSM
VRRM
VRSM
IO
IFSM
Tj
Tstg
Viso
10ms
50Hz/60Hz sine wave
Tj=150°C, 10ms
Tj=150°C, 10ms
AC : 1 min.
1200
±20
10
20
10
60
1200
±20
5
12.5
40
1200
1
50
1600
1700
25
320
512
+150
-40 to +125
AC 2500
1.7 *1
V
V
A
A
A
W
V
V
A
A
W
V
A
A
V
V
A
A
A²s
°C
°C
V
N·m
IGBT Module
7MBR10NF120
Electrical characteristics (Tj=25°C unless without specified)
Item Symbol Condition Characteristics Unit
Min. Typ. Max.
Zero gate voltage collector current
Gate-Emitter leakage current
Gate-Emitter threshold voltage
Collector-Emitter saturation voltage
Collector-Emitter voltage
Input capacitance
Switching time
Reverse recovery time of FRD
Zero gate voltage collector current
Gate-Emitter leakage current
Collector-Emitter saturation voltage
Switching time
Reverse current
(FWD)
Reverse recovery time
Forward voltage
Reverse current
Converter Brake Brake (IGBT) Inverter (IGBT)
ICES
IGES
VGE(th)
VCE(sat)
-VCE
Cies
ton
tr
toff
tf
trr
ICES
IGES
VCE(sat)
ton
tr
toff
tf
IRRM
trr
VFM
IRRM
VCE=1200V, VGE=0V, Tj=25°C
VCE=0V, VGE=±20V
VCE=20V, IC=10mA
VGE=15V, Ic=10A
-Ic=10A
VGE=0V, VCE=10V, f=1MHz
VCC=600V
IC=10A
VGE=±15V
RG=62 ohm
IF=10A,VGE=-10V,-di/dt=50A/µs
VCES=1200V, VGE=0V
VCE=0V, VGE=±20V
IC=5A, VGE=15V
VCC=600V
IC=5A
VGE=±15V
RG= 120 ohm
IF=25A
VR=V RRM
4.5
2100
100
350
100
1.0
7.5
3.3
3.0
1.2
0.6
1.5
0.5
1.0
3.55
0.8
0.6
1.5
0.5
1.4
1.0
mA
nA
V
V
V
pF
µs
µs
µs
µs
ns
mA
nA
V
µs
µs
µs
µs
V
mA
Thermal Characteristics
Item Symbol Condition Characteristics Unit
Min. Typ. Max.
Inverter IGBT
Thermal resistance ( 1 device ) Rth(j-c)
Contact thermal resistance * Rth(c-f)
* This is the value which is defined mounting on the additional cooling fin with thermal compound
Inverter FRD
Brake IGBT
Converter Diode
With thermal compound
1.67
3.30
3.12 °C/W
3.40
0.05
Equivalent Circuit Schematic
* NLU (Over current Limiting circuit)
IGBT Module
Characteristics (Representative)
7MBR10NF120
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