Fuji Electric 7MBR100VB060-50 Data Sheet
http://www.fujielectric.com/products/semiconductor/
7MBR100VB060-50
IGBT Modules
IGBT MODULE (V series)
600V / 100A / PIM
Features
Low VCE(sat)
Compact Package
P.C.Board Mount Module
Converter Diode Bridge Dynamic Brake Circuit
RoHS compliant product
Applications
Inverter for Motor Drive
AC and DC Servo Drive Amplier
Uninterruptible Power Supply
Maximum Ratings and Characteristics
Absolute Maximum Ratings (at TC=25°C unless otherwise specied)
Items Symbols Conditions
Collector-Emitter voltage VCES 600 V
Gate-Emitter voltage V
Collector current
Inverter
Collector power dissipation P
GES ±20 V
I
C Continuous TC=80°C 100
I
cp 1ms TC=80°C 200
-I
C 100
-I
c pulse 1ms 200
C 1 device 335 W
Collector-Emitter voltage VCES 600 V
Gate-Emitter voltage V
Collector current
Brake
Collector power dissipation P
Repetitive peak reverse voltage (Diode) V
GES ±20 V
I
C Continuous TC=80°C 50
I
CP 1ms TC =80°C 100
C 1 device 215 W
RRM 600 V
Repetitive peak reverse voltage VRRM 800 V
Average output current I
Surge current (Non-Repetitive) I
2
Converter
I
t (Non-Repetitive) I2t 2450 A2s
Junction temperature T
Operating junciton temperature
(under switching conditions)
Case temperature T
Storage temperature T
Isolation voltage
between terminal and copper base (*1)
between thermistor and others (*2)
O 50Hz/60Hz, sine wave 100 A
FSM
10ms, Tj=150°C
half sine wave
j
jop
T
C 125
stg -40~+125
Inverter, Brake 175
Converter 150
Inverter, Brake 150
Converter 150
Viso AC : 1min. 2500 VAC
Screw torque Mounting (*3) - M5 3.5 N m
Note *1: All terminals should be c onnected together during the test.
Note *2: Two thermistor terminals should be connected together, other terminals should be connected together and shorted to base plate during the test.
Note *3: Recommendable value : 2.5-3.5 Nm (M5)
Maximum
ratings
700 A
Units
°C
A
A
1
1386a
MARCH 2014
7MBR100VB060-50
3
IGBT Modules
http://www.fujielectric.com/products/semiconductor/
Electrical characteristics (at Tj= 25°C unless otherwise specied)
Items Symbols Conditions
Zero gate voltage collector current ICES VGE = 0V, VCE = 600V - - 1.0 mA
Gate-Emitter leakage current I
Gate-Emitter threshold voltage V
Collector-Emitter saturation voltage
GES VGE = 0V, VGE = ±20V - - 200 nA
GE (th) VCE = 20V, IC = 100mA 6.2 6.7 7.2 V
T
CE (sat)
V
(terminal)
CE (sat)
V
(chip)
VGE = 15V
IC = 100A
VGE = 15V
IC = 100A
j=25°C - 2.20 2.65
T
j=125°C - 2.50 -
T
j=150°C - 2.60 -
T
j=25°C - 1.60 2.05
T
j=125°C - 1.90 -
T
j=150°C - 2.00 -
Internal gate resistance Rg(int) - - 9 - Ω
Input capacitance C
Inverter
Turn-on time
Turn-off time
Forward on voltage
Reverse recovery time t
Zero gate voltage collector current ICES
Gate-Emitter leakage current I
Collector-Emitter saturation voltage
Brake
ies VCE
t
on
t
r - 0.25 0.60
t
r (i) - 0.07 -
t
off - 0.52 1.20
t
f - 0.03 0.45
F
V
(terminal)
F
V
(chip)
rr IF = 100A - - 0.35 µs
= 10V, VGE = 0V, f = 1MHz - 6.4 - nF
VCC = 300V
IC = 100A
VGE = +15 / -15V
RG = 13Ω
j=25°C - 2.20 2.65
T
F = 100A
I
F = 100A
I
T
j=125°C - 2.10 -
T
j=150°C - 2.10 -
j=25°C - 1.60 2.05
T
T
j=125°C - 1.50 -
T
j=150°C - 1.47 -
VGE = 0V
VCE = 600V
GES
CE (sat)
V
(terminal)
CE (sat)
V
(chip)
VCE = 0V
VGE = +20 / -20V
VGE = 15V
IC = 50A
VGE = 15V
IC = 50A
T
j=25°C - 1.90 2.35
T
j=125°C - 2.20 -
T
j=150°C - 2.30 -
T
j=25°C - 1.60 2.05
T
j=125°C - 1.90 -
T
j=150°C - 2.00 -
Internal gate resistance Rg(int) - - 0 - Ω
t
Turn-on time
Turn-off time
Reverse current I
Forward on voltage
Converter
Reverse current I
on
t
r - 0.25 0.60
t
off - 0.52 1.20
t
f - 0.03 0.45
RRM VR = 600V - - 1.00 mA
FM
V
(chip)
RRM VR = 800V - - 1.0 mA
Resistance R
Thermistor
B value B T = 25 / 50°C
VCE = 300V
IC = 50A
VGE = +15 / -15V
RG = 43Ω
F = 100A
I
terminal - 1.85 2.30
chip - 1.25 -
T = 25°C - 5000 -
T = 100°C 465 495 520
Characteristics
min. typ. max.
- 0.36 1.20
- - 1.0 mA
- - 200 nA
- 0.36 1.20
3305 3375 3450 K
Units
V
µs
V
V
µs
V
Ω
Thermal resistance characteristics
Items Symbols Conditions
Inverter IGBT - - 0.45
Thermal resistance (1device) R
Contact thermal resistance (1device) (*4) R
th(j- c)
th(c-f) with Thermal Compound - 0.05 -
Note *4: This is the value which is dened mounting on the additional c ooling n with thermal compound.
Inverter FWD - - 0.80
Brake IGBT - - 0.71
Converter Diode - - 0.66
2
Characteristics
min. typ. max.
Units
°C/W
7MBR100VB060-50
8
0
Characteristics (Representative)
IGBT Modules
http://www.fujielectric.com/products/semiconductor/
[ Inverter ]
Collector current vs. Collector-Emitter voltage (typ.)
j= 25°C / chip
T
200
V
GE=20V
15V
150
100
50
Collector current: IC [A]
0
0 1 2 3 4 5
Collector-Emitter voltage: VCE[V]
[ Inverter ]
Collector current vs. Collector-Emitter voltage (typ.)
GE=15V / chip
V
200
150
T
j=25°C
Tj=150°C
j=125°C
T
10V
V
[ Inverter ]
Collector current vs. Collector-Emitter voltage (typ.)
T
j= 150°C / chip
200
V
GE=20V
15V
12V
150
100
50
Collector current: IC [A]
V
1
8V
0
0 1 2 3 4 5
Collector-Emitter voltage: V
CE [V]
[ Inverter ]
Collector-Emitter voltage vs. Gate-Emitter voltage (typ.)
T
j= 25°C / chip
8
CE [V]
6
100
50
Collector current: IC [A]
0
0 1 2 3 4 5
Collector-Emitter voltage: V
CE [V]
[ Inverter ]
Capacitance vs. Collector-Emitter voltage (typ.)
V
GE=0V, f= 1MHz, Tj= 25°C
100.0
C
ies
10.0
1.0
0.1
Cres
Coes
4
2
I
I
I
Collector - Emitter voltage: V
0
5 10 15 20 25
Gate - Emitter voltage: VGE [V]
[ Inverter ]
Dynamic gate charge (typ.)
V
CC=300V， IC=100A，Tj= 25°C
VGE
GE [5V/div]
VCE
0
C=200A
C=100A
C=50A
Capacitance: Cies, Coes, Cres [nF]
0.0
0 10 20 30
Collector - Emitter voltage: V
CE [V]
Gate - Emitter voltage: V
Collector - Emitter voltage: VCE [200V/div]
0 800
Gate charge: Qg [nC]
3
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