Fuji Electric 7MBR100VB060-50 Data Sheet

http://www.fujielectric.com/products/semiconductor/

7MBR100VB060-50

IGBT Modules

IGBT MODULE (V series)
600V / 100A / PIM

Features

Low VCE(sat)
Compact Package
P.C.Board Mount Module
Converter Diode Bridge Dynamic Brake Circuit
RoHS compliant product

Applications

Inverter for Motor Drive
AC and DC Servo Drive Amplier
Uninterruptible Power Supply

Maximum Ratings and Characteristics

Absolute Maximum Ratings (at TC=25°C unless otherwise specied)

Items Symbols Conditions

Collector-Emitter voltage VCES 600 V

Gate-Emitter voltage V

Collector current

Inverter

Collector power dissipation P

GES ±20 V

I

C Continuous TC=80°C 100

I

cp 1ms TC=80°C 200

-I

C 100

-I

c pulse 1ms 200

C 1 device 335 W

Collector-Emitter voltage VCES 600 V

Gate-Emitter voltage V

Collector current

Brake

Collector power dissipation P

Repetitive peak reverse voltage (Diode) V

GES ±20 V

I

C Continuous TC=80°C 50

I

CP 1ms TC =80°C 100

C 1 device 215 W

RRM 600 V

Repetitive peak reverse voltage VRRM 800 V

Average output current I

Surge current (Non-Repetitive) I

2

Converter

I

t (Non-Repetitive) I2t 2450 A2s

Junction temperature T

Operating junciton temperature
(under switching conditions)

Case temperature T

Storage temperature T

Isolation voltage

between terminal and copper base (*1)
between thermistor and others (*2)

O 50Hz/60Hz, sine wave 100 A

FSM

10ms, Tj=150°C
half sine wave

j

jop

T

C 125

stg -40~+125

Inverter, Brake 175

Converter 150

Inverter, Brake 150

Converter 150

Viso AC : 1min. 2500 VAC

Screw torque Mounting (*3) - M5 3.5 N m

Note *1: All terminals should be c onnected together during the test.
Note *2: Two thermistor terminals should be connected together, other terminals should be connected together and shorted to base plate during the test.
Note *3: Recommendable value : 2.5-3.5 Nm (M5)

Maximum

ratings

700 A

Units

°C

A

A

1

1386a

MARCH 2014

7MBR100VB060-50

3

IGBT Modules

http://www.fujielectric.com/products/semiconductor/

Electrical characteristics (at Tj= 25°C unless otherwise specied)

Items Symbols Conditions

Zero gate voltage collector current ICES VGE = 0V, VCE = 600V - - 1.0 mA

Gate-Emitter leakage current I

Gate-Emitter threshold voltage V

Collector-Emitter saturation voltage

GES VGE = 0V, VGE = ±20V - - 200 nA

GE (th) VCE = 20V, IC = 100mA 6.2 6.7 7.2 V

T

CE (sat)

V
(terminal)

CE (sat)

V
(chip)

VGE = 15V
IC = 100A

VGE = 15V
IC = 100A

j=25°C - 2.20 2.65

T

j=125°C - 2.50 -

T

j=150°C - 2.60 -

T

j=25°C - 1.60 2.05

T

j=125°C - 1.90 -

T

j=150°C - 2.00 -

Internal gate resistance Rg(int) - - 9 - Ω

Input capacitance C

Inverter

Turn-on time

Turn-off time

Forward on voltage

Reverse recovery time t

Zero gate voltage collector current ICES

Gate-Emitter leakage current I

Collector-Emitter saturation voltage

Brake

ies VCE

t

on

t

r - 0.25 0.60

t

r (i) - 0.07 -

t

off - 0.52 1.20

t

f - 0.03 0.45

F

V
(terminal)

F

V
(chip)

rr IF = 100A - - 0.35 µs

= 10V, VGE = 0V, f = 1MHz - 6.4 - nF

VCC = 300V
IC = 100A
VGE = +15 / -15V
RG = 13Ω

j=25°C - 2.20 2.65

T

F = 100A

I

F = 100A

I

T

j=125°C - 2.10 -

T

j=150°C - 2.10 -

j=25°C - 1.60 2.05

T

T

j=125°C - 1.50 -

T

j=150°C - 1.47 -

VGE = 0V
VCE = 600V

GES

CE (sat)

V
(terminal)

CE (sat)

V
(chip)

VCE = 0V
VGE = +20 / -20V

VGE = 15V
IC = 50A

VGE = 15V
IC = 50A

T

j=25°C - 1.90 2.35

T

j=125°C - 2.20 -

T

j=150°C - 2.30 -

T

j=25°C - 1.60 2.05

T

j=125°C - 1.90 -

T

j=150°C - 2.00 -

Internal gate resistance Rg(int) - - 0 - Ω

t

Turn-on time

Turn-off time

Reverse current I

Forward on voltage

Converter

Reverse current I

on

t

r - 0.25 0.60

t

off - 0.52 1.20

t

f - 0.03 0.45

RRM VR = 600V - - 1.00 mA

FM

V
(chip)

RRM VR = 800V - - 1.0 mA

Resistance R

Thermistor

B value B T = 25 / 50°C

VCE = 300V
IC = 50A
VGE = +15 / -15V
RG = 43Ω

F = 100A

I

terminal - 1.85 2.30

chip - 1.25 -

T = 25°C - 5000 -

T = 100°C 465 495 520

Characteristics

min. typ. max.

- 0.36 1.20

- - 1.0 mA

- - 200 nA

- 0.36 1.20

3305 3375 3450 K

Units

V

µs

V

V

µs

V

Ω

Thermal resistance characteristics

Items Symbols Conditions

Inverter IGBT - - 0.45

Thermal resistance (1device) R

Contact thermal resistance (1device) (*4) R

th(j- c)

th(c-f) with Thermal Compound - 0.05 -

Note *4: This is the value which is dened mounting on the additional c ooling n with thermal compound.

Inverter FWD - - 0.80

Brake IGBT - - 0.71

Converter Diode - - 0.66

2

Characteristics

min. typ. max.

Units

°C/W

7MBR100VB060-50

8

0

Characteristics (Representative)

IGBT Modules

http://www.fujielectric.com/products/semiconductor/

[ Inverter ]

Collector current vs. Collector-Emitter voltage (typ.)

j= 25°C / chip

T

200

V

GE=20V

15V

150

100

50

Collector current: IC [A]

0

0 1 2 3 4 5

Collector-Emitter voltage: VCE[V]

[ Inverter ]

Collector current vs. Collector-Emitter voltage (typ.)

GE=15V / chip

V

200

150

T

j=25°C

Tj=150°C

j=125°C

T

10V

V

[ Inverter ]

Collector current vs. Collector-Emitter voltage (typ.)

T

j= 150°C / chip

200

V

GE=20V

15V

12V

150

100

50

Collector current: IC [A]

V

1

8V

0

0 1 2 3 4 5

Collector-Emitter voltage: V

CE [V]

[ Inverter ]

Collector-Emitter voltage vs. Gate-Emitter voltage (typ.)

T

j= 25°C / chip

8

CE [V]

6

100

50

Collector current: IC [A]

0

0 1 2 3 4 5

Collector-Emitter voltage: V

CE [V]

[ Inverter ]

Capacitance vs. Collector-Emitter voltage (typ.)

V

GE=0V, f= 1MHz, Tj= 25°C

100.0

C

ies

10.0

1.0

0.1

Cres

Coes

4

2

I
I
I

Collector - Emitter voltage: V

0

5 10 15 20 25

Gate - Emitter voltage: VGE [V]

[ Inverter ]

Dynamic gate charge (typ.)

V

CC=300V， IC=100A，Tj= 25°C

VGE

GE [5V/div]

VCE

0

C=200A
C=100A
C=50A

Capacitance: Cies, Coes, Cres [nF]

0.0

0 10 20 30

Collector - Emitter voltage: V

CE [V]

Gate - Emitter voltage: V

Collector - Emitter voltage: VCE [200V/div]

0 800

Gate charge: Qg [nC]

3

7MBR100VB060-50

5

r

IGBT Modules

http://www.fujielectric.com/products/semiconductor/

Switching time : ton, tr, toff, tf [ nsec ]

[ Inverter ]

Switching time vs. Collector current (typ.)

CC=300V, VGE=±15V, RG=13Ω, Tj= 125°C

V

10000

1000

off

t

tr

100

10

0 100 200 300

Collector current: IC [A]

[ Inverter ]

Switching time vs. gate resistance (typ.)

CC=300V, IC=100A, VGE=±15V, Tj= 125°C

V

10000

1000

[ Inverter ]

Switching time vs. Collector current (typ.)

CC=300V, VGE=±15V, RG=13Ω, Tj= 150°C

V

10000

ton

1000

toff

ton

t

100

tf

tf

Switching time : ton, tr, toff, tf [ nsec ]

10

0 100 200 300

Collector current: I

C [A]

[ Inverter ]

Switching loss vs. Collector current (typ.)

CC=300V, VGE=±15V, RG=13Ω

V

15

toff
ton

t

r

10

on(150°C)

E
E

on(125°C)

on, Eoff, Err [mJ/pulse ]

100

tf

5

off(125°C)

E

E

rr(150°C)

Err(125°C)

Eoff(150°C)

Switching time : ton, tr, toff, tf [ nsec ]

10

1 10 100 1000

Gate resistance : R

G [Ω]

[ Inverter ]

Switching loss vs. gate resistance (typ.)

VCC=300V, IC=100A, VGE=±15V

30

E
E

20

on(150°C)

on(125°C)

0

Switching loss : E

0 100 200 300

Collector current: IC [A]

[ Inverter ]

Reverse bias safe operating area (max.)

GE=15V, -VGE <= 15V, RG >= 13Ω ,Tj =150°C

+V

300

200

RBSOA

10

E

off(150°C)

E

off(125°C)

100

(Repetitive pulse)

Collector current: IC [A]

E

rr(150°C)

E

0

Switching loss : Eon, Eoff, Err [mJ/pulse ]

1 10 100 1000

Gate resistance : RG [Ω]

rr(125°C)

0

0 200 400 600 800

Collector-Emitter voltage : VCE [V]

(Main terminals)

4

7MBR100VB060-50

IGBT Modules

http://www.fujielectric.com/products/semiconductor/

[ Inverter ]

Forward current vs. forward on voltage (typ.)

chip

200

150

100

Tj=150°C

50

Forward current : IF [A]

Tj=125°C

Tj=25°C

0

0.0 0.5 1.0 1.5 2.0 2.5 3.0

Forward on voltage : VF [V]

[ Converter ]

Forward current vs. forward on voltage (typ.)

chip

200

[ Inverter ]

Reverse recovery characteristics (typ.)

V

CC=300V, VGE=±15V, RG=13Ω

1000

rr [ nsec ]

100

Reverse recovery current : Irr [ A ]

Reverse recovery time : t

10

0 100 200 300

Forward current : I

F [A]

t

rr(150°C)

trr(125°C)

Irr(150°C)
I

rr(125°C)

150

100

T

T

50

Forward current : IF [A]

j=125°

j=25°C

0

0.0 0.5 1.0 1.5 2.0 2.5 3.0

Forward on voltage : V

FM [V]

Transient thermal resistance (max.)

1.00

IGBT[Brake]

0.10

n 1 2 3 4

[sec] 0.0023 0.0301 0.0598 0.0708

n

T

IGBT 0.04827 0.12238 0.17288 0.10648

n

r

[°C/W] FWD 0.08581 0.21756 0.30734 0.18929

B-IGBT 0.07616 0.19308 0.27277 0.16800

Thermal resistanse : Rth(j-c) [ °C/W ]

0.01

Conv 0.07079 0.17948 0.25356 0.15617

4

=

1

n

1

=

n

0.001 0.010 0.100 1.000

Pulse width : Pw [sec]

FWD[Inverter]

Conv. Diode

IGBT[Inverter]

t

n

erZth

[ Thermistor ]

Temperature characteristic (typ.)

100

10

1

Resistance : R [kΩ]

0.1

-60 -40 -20 0 20 40 60 80 100 120 140 160 180

Temperature [°C ]

5

7MBR100VB060-50

7

0

IGBT Modules

http://www.fujielectric.com/products/semiconductor/

[ Brake ]

Collector current vs. Collector-Emitter voltage (typ.)

j= 25°C / chip

T

100

GE

V

=20V 15V

12V

75

50

25

Collector current: IC [A]

0

0 1 2 3 4 5

Collector-Emitter voltage: VCE [V]

[ Brake ]

Collector current vs. Collector-Emitter voltage (typ.)

GE=15V / chip

V

100

75

T

j=25°C

Tj=150°C

j=125°C

T

10V

[ Brake ]

Collector current vs. Collector-Emitter voltage (typ.)

j= 150°C / chip

T

100

V

GE

=20V

15V

12V

75

V

50

25

Collector current: IC [A]

1

8V

0

0 1 2 3 4 5

Collector-Emitter voltage: V

CE [V]

[ Brake ]

Collector-Emitter voltage vs. Gate-Emitter voltage (typ.)

T

j= 25°C / chip

8

CE [V]

6

50

25

Collector current: IC [A]

0

0 1 2 3 4 5

Collector-Emitter voltage: V

[ Brake ]

Capacitance vs. Collector-Emitter voltage (typ.)

V

GE=0V, f= 1MHz, Tj= 25°C

10.0

ies

C

1.0

Coes

Cres

Capacitance: Cies, Coes, Cres [nF]

0.1

0 10 20 30

Collector - Emitter voltage: VCE [V]

CE [V]

4

I

2

C=100A
C=50A

I
I

C=25A

Collector - Emitter voltage: V

0

5 10 15 20 25

Gate - Emitter voltage: V

GE [V]

[ Brake ]

Dynamic gate charge (typ.)

V

CC=300V, IC=50A, Tj= 25°C

GE [5V/div]

VCE

0

Gate - Emitter voltage: V

Collector - Emitter voltage: VCE [200V/div]

-400 0 400

Gate charge: Qg [nC]

VGE

6

7MBR100VB060-50

Outline Drawings(Unit:mm)

IGBT Modules

http://www.fujielectric.com/products/semiconductor/

Equivalent Circuit

[ Converter ] [ Brake ] [ Inverter ] [ Thermistor ]

2(S) 3(T)1(R)

21(P)

23(N)

22(P1)

7(B)

14(Gb)

24(N1)

20
(Gu)

19(Eu)

13(Gx)

18
(Gv)

17(Ev)

4(U)

12(Gy) 11(Gz)

5(V)

Weight: 300g(typ.)

16
(Gw)

15(Ew)

98

6(W)

10(En)

7

7MBR100VB060-50

IGBT Modules

http://www.fujielectric.com/products/semiconductor/

WARNING

1. This Catalog contains the product specications, characteristics, data, mater ials, and structures as of March 2014.
The contents are subject to change without notice for specication changes or other reasons. When using a product listed in this Catalog, be
sur to obtain the latest specications.

2. All applic ations described in this Catalog exemplif y the use of Fuji's products for your reference only. No right or license, either express or
implied, under any patent, copyright, trade secret or other intellectual property right owned by Fuji Electric Co., Ltd. is (or shall be deemed)
granted. Fuji Electric Co., Ltd. makes no representation or warranty, whether express or implied, relating to the infringement or alleged
infringement of other's intellectual propert y rights which may arise from the use of the applications described herein.

3. Although Fuji Electric Co., Ltd. is enhancing product quality and reliability, a small percentage of semiconductor products may become
faulty. When using Fuji Electr ic semiconductor products in your equipment, you are requested to take adequate safety measures to prevent
the equipment from causing a physical injury, re, or other problem if any of the products become faulty. It is recommended to make your
design failsafe, ame retardant, and free of malfunction.

4. The products introduced in this Catalog are intended for use in the following electronic and electrical equipment which has normal reliability
requirements.

• Computers • OA equipment • Communications equipment (terminal devices) • Measurement equipment

• Machine tools • Audiovisual equipment • Electrical home appliances • Personal equipment • Industrial robots etc.

5. If you need to use a product in this Catalog for equipment requiring higher reliability than normal, such as for the equipment listed below,
it is imperative to contact Fuji Electric Co., Ltd. to obtain prior approval. When using these products for such equipment, take adequate
measures such as a backup system to prevent the equipment from malfunctioning even if a Fuji's product incorporated in the equipment
becomes faulty.

• Transportation equipment (mounted on cars and ships) • Trunk communications equipment

• Trafc-signal control equipment • Gas leakage detectors with an auto -shut-of f feature

• Emergency equipment for responding to disasters and anti -burglar y devices • Safety devices

• Medical equipment

6. Do not use products in this Catalog for the equipment requiring strict reliability such as the following and equivalents to strategic equipment
(without limitation).

• Space equipment • Aeronautic equipment • Nuclear control equipment

• Submarine repeater equipment

7. Copyright ©1996-2014 by Fuji Electric Co., Ltd. All rights reserved.
No part of this Catalog may be reproduced in any form or by any means without the express permission of Fuji Electr ic Co., Ltd.

8. If you have any question about any por tion in this Catalog, ask Fuji Electric Co., Ltd. or its sales agents before using the product.
Neither Fuji Electric Co., Ltd. nor its agents shall be liable for any injury caused by any use of the products not in accordanc e with instruc tions
set forth herein.

8

Technical Information

Please refer to URLs below for futher information about products, application manuals and technical documents.

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IGBT Modules

FUJI ELECTRIC Power Semiconductor WEB site

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Information

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2

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3

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8

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2

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7

AT-NPC 3-Level Loss Simulation Software www.fujielectric.com/products/semiconductor/model/igbt/simulation_3level/

8

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9

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10

Revised and discontinued product information www.fujielectric.com/products/semiconductor/discontinued/

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5

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2015-10