Page 1
7MBR100U2B060
IGBT MODULE (U series)
600V / 100A / PIM
Features
· Low VCE(sat)
· Compact Package
· P.C. Board Mount Module
· Converter Diode Bridge Dynamic Brake Circuit
Applications
· Inverter for Motoe Drive
· AC and DC Servo Drive Amplifier
· Uninterruptible Power Supply
IGBT Modules
Maximum ratings and characteristics
Absolute maximum ratings (T c=25°C unless otherwise specified)
Item Symbol Condition Rating Unit
Collector-Emitter voltage
Gate-Emitter voltage
Collector current
Collector power disspation
Collector-Emitter voltage
Gate-Emitter voltage
Collector current
Collector power disspation
Repetitive peak reverse voltage
Repetitive peak reverse voltage
Average output current
Surge current (Non-Repetitive)
Converter Brake Inverter
I2t (Non-Repetitive)
Operating junction temperature
Storage temperature
Isolation between terminal and copper base *2
voltage between thermistor and others *3
Mounting screw torque
*1 Recommendable value : 2.5 to 3.5 N·m (M5)
*2 All terminals should be connected together when isolation test will be done.
*3 Two thermistor terminals should be connected together, each other terminals should be
connected together and shorted to base plate when isolation test will be done.
VCES
VGES
IC
ICP
-IC
-IC pulse
PC
VCES
VGES
IC
ICP
PC
VRRM
VRRM
IO
IFSM
I2t
Tj
Tstg
Viso
Continuous
1ms
1ms
1 device
Continuous
1ms
1 device
50Hz/60Hz sine wave
Tj=150°C, 10ms
half sine wave
AC : 1 minute
600
±20
100
200
100
200
378
600
±20
50
100
187
600
800
100
700
2450
+150
-40 to +125
AC 2500
AC 2500
3.5 *1
V
V
A
A
A
W
V
V
A
A
W
V
V
A
A
A2s
°C
°C
V
V
N·m
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IGBT Module
7MBR100U2B060
Electrical characteristics (Tj=25°C unless otherwise specified)
Item Symbol Condition Characteristics Unit
Min. Typ. Max.
Zero gate voltage collector current
Gate-Emitter leakage current
Gate-Emitter threshold voltage
Collector-Emitter saturation voltage
Input capacitance
Turn-on time
Turn-off time
Forward on voltage
Reverse recovery time
Zero gate voltage collector current
Gate-Emitter leakage current
Collector-Emitter saturation voltage
Turn-on time
Turn-off time
Reverse current
Forward on voltage
Reverse current
Resistance
B value
Thermistor Converter Brake Inverter
ICES
IGES
VGE(th)
VCE(sat)
(terminal)
VCE(sat)
(chip)
Cies
ton
tr
tr(i)
toff
tf
VF
(terminal)
VF
(chip)
trr
ICES
IGES
VCE(sat)
(terminal)
VCE(sat)
(chip)
ton
tr
toff
tf
IRRM
VFM
IRRM
R
B
VCE=600V, VGE=0V
VCE=0V, VGE=±20V
VCE=20V, IC=100mA
VGE=15V
Ic=100A
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
V
GE=0V, VCE=10V, f=1MHz
VCC=300V
IC=100A
VGE=±15V
RG=33Ω
VGE=0V
IF=100A
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
IF=100A
VCE=600V, VGE=0V
VCE=0V, VGE=±20V
IC=50A
VGE=15V
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
VCC=300V
IC=50A
VGE=±15V
RG=68Ω
VR=600V
IF=100A terminal
VGE=0V chip
VR=800V
T=25°C
T=100°C
T=25/50°C
1.0
200
6.2 6.7 7.7
2.30 2.60
2.50
1.85
2.00
8.4
0.51 1.20
0.22 0.60
0.16
0.58 1.20
0.07 0.45
2.10 2.40
2.40
1.60
1.65
0.35
1.0
200
2.10 2.40
2.40
1.85
2.15
0.42 1.20
0.24 0.60
0.42 1.20
0.03 0.45
1.0
1.20 1.50
1.10
1.0
5000
465 495 520
3305 3375 3450
mA
nA
V
V
nF
µs
V
µs
mA
nA
V
µs
mA
V
mA
Ω
K
Thermal resistance Characteristics
Item Symbol Condition Characteristics Unit
Min. Typ. Max.
Inverter IGBT
Thermal resistance ( 1 device ) Rth(j-c)
Inverter FWD
Brake IGBT
Converter Diode
Contact thermal resistance * Rth(c-f)
* This is the value which is defined mounting on the additional cooling fin with thermal compound
With thermal compound
0.33
0.67
0.67 °C/W
0.47
0.05
Equivalent Circuit Schematic
1(R)
[Converter]
2(S) 3(T)
21(P)
23(N)
22(P1)
7(B)
[Brake] [Inverter]
14(Gb)
24(N1)
20(Gu)
19(Eu)
13(Gx)
18(Gv)
4(U)
12(Gy)
17(Ev)
16(Gw)
15(Ew)
5(V) 6(W)
11(Gz)
[Thermistor]
89
10(En)
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IGBT Module
C
ll
t
t
I
[A]
C
ll
I
[A]
C
ll
t
t
I
[A]
G
E
i
l
g
VGE
[
V
]
Characteristics (Representative)
[ Inverter ] [ Inverter ]
Collector current vs. Collector-Emitter voltage (typ.)
Tj= 25°C / chip
250
7MBR100U2B060
Collector current vs. Collector-Emitter voltage (typ.)
Tj= 125°C / chip
250
c
:
or curren
ec
o
c
:
200
150
100
50
0
012345
VGE= 20V 15V 12V
10
8V
Collector-Emitter voltage : VCE [V]
[ Inverter ] [ Inverter ]
Collector current vs. Collector-Emitter voltage (typ.)
VGE=15V / chip Tj=25°C / chip
250
200
150
Tj=125°CTj=25°C
200
c
150
100
ector current :
o
50
0
012345
VGE=20V 15V 12V
Collector-Emitter voltage : VCE [V]
Collector-Emitter voltage vs. Gate-Emitter voltage (typ.)
10
8
6
10V
8V
or curren
100
ec
o
50
0
01234
Collector-Emitter voltage : VCE [V]
Capacitance vs. Collector-Emitter voltage (typ.)
100.00
10.00
1.00
Capacitance : Cies, Coes, Cres [ nF ]
0.10
0102030
Collector-Emitter voltage : VCE [V]
4
2
Collector - Emitter voltage : VCE [ V ]
0
5 10152025
Gate - Emitter voltage : VGE [ V ]
[ Inverter ] [ Inverter ]
Dynamic Gate charge (typ.)
Vcc=300V, Ic=100A, Tj= 25°CVGE=0V, f= 1MHz, Tj= 25°C
500
400
Cies
300
VGE
VCE
Gate charge : Qg [ nC ]
Cres
Coes
200
100
Collector-Emitter voltage : VCE [ V ]
0
0 100 200 300 400 500
Ic=200A
Ic=100A
Ic= 50A
25
20
15
e :
ta
10
tter vo
m
5
ate -
0
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IGBT Module 7MBR100U2B060
[ Inverter ] [ Inverter ]
Switching time vs. Collector current (typ.)
Vcc=300V, VGE=±15V, Rg=33Ω, Tj= 25°C
10000
Switching time vs. Collector current (typ.)
Vcc=300V, VGE=±15V, Rg=33Ω, Tj=125°C
10000
1000
100
Switching time : ton, tr, toff, tf [ nsec ]
10
toff
ton
0 50 100 150 200
Collector current : Ic [ A ]
[ Inverter ] [ Inverter ]
Switching time vs. Gate resistance (typ.)
Vcc=300V, Ic=100A, VGE=±15V, Tj= 25°C
10000
1000
toff
ton
100
Switching time : ton, tr, toff, tf [ nsec ]
10
10 100 1000
Gate resi stance : Rg [ Ω ]
1000
toff
tr
tf
100
Switching time : ton, tr, toff, tf [ nsec ]
10
0 50 100 150 200
tr
Collector current : Ic [ A ]
ton
tf
Switching loss vs. Collector current (typ.)
Vcc=300V, VGE=±15V, Rg=33
10
8
tr
6
tf
4
Eoff(2 5°C)
2
Switching loss : Eon, Eoff, Err [ mJ/pulse ]
0
0 50 100 150 200
Collector current : Ic [ A ]
Ω
Eon(125°C)
Eoff(125°C)
Eon(25°C)
Err(125°C)
Err(25°
[ Invert er ] [ Inver ter ]
Switching loss vs. Gate resistance (typ.)
Vcc=300V, Ic=100A, VGE=±15V, Tj= 125°C
15
Eon
10
5
Switching loss : Eon, Eoff, Err [ mJ/pulse ]
0
10 100 1000
Gate r esistance : Rg [ Ω ]
Eoff
Err
Reverse bias safe operating area (max.)
+VGE=15V,-VGE <= 15V, RG >= 33Ω ,Tj <= 125°C
250
200
150
100
Collector current : Ic [ A ]
50
0
0 200 400 600 800
Collector - Emitter voltage : VCE [ V ]
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IGBT Module 7MBR100U2B060
Forward current vs . Forward on voltage (typ.)
chip
250
200
150
100
Forward current : IF [ A ]
50
0
0.0 0.5 1.0 1.5 2.0 2.5 3.0
Forward on voltage : VF [ V ]
[ Converter ]
Forward current vs . Forward on voltage (typ.)
chip
250
Revers e recovery characterist ics (t y p .)
Vcc=300V, VGE=±15V, Rg=33
1000
Tj=125°CTj=25°C
100
trr (125°C)
Reverse recovery current : Irr [ A ]
Reverse recovery time : trr [ nsec ]
trr (25°C)
10
0 50 100 150 200
Forward current : IF [ A ]
Ω
Irr (125 °C)
Irr (25°C)
200
150
100
Forward current : IF [ A ]
50
0
0.0 0.5 1.0 1.5 2.0
Tj=125°C
Forward on voltage : VFM [ V ]
Tj=25°C
Transient t hermal res ist ance (max.)
10.000
1.000
0.100
FWD[Inverter], IGBT[Brake]
Conv.Diode
IGBT[Inverter]
[ Thermist or ]
Temp erature characterist ic (typ.)
100
10
1
Resistance : R [ kΩ ]
Thermal resistanse : Rth(j-c) [ °C/W ]
0.010
0.001 0.010 0.100 1.000
Pulse width : Pw [ sec ]
0.1
-60 -40 -20 0 20 40 60 80 100 120 140 160 180
Temperat ure [°C ]
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IGBT Module
C
ll
t
t
I
[A]
C
ll
I
[A]
C
ll
I
[A]
Collector current vs. Collector-Emitter voltage (typ.)
120
[ Brake ] [ Brake ]
Collector current vs. Collector-Emitter voltage (typ.)
Tj= 25°C / chip
120
Tj= 125°C / chip
7MBR100U2B060
100
c
80
:
60
or curren
ec
40
o
20
0
012345
120
100
80
c
60
ector current :
40
o
20
0
01234
VGE=20V 15V 12V
10V
8V
Collector-Emitter voltage : VCE [V]
[ Brake ] [ Brake ]
Collector current vs. Collector-Emitter voltage (typ.)
VGE=15V / chip Tj=25°C / chip
Tj=25°C
Tj=125°C
Collector-Emitter voltage : VCE [V]
100
c
80
60
ector current :
40
o
20
0
012345
Collector-Emitter voltage : VCE [V]
VGE=20V 15V 12V
Collector-Emitter voltage vs. Gate-Emitter voltage (typ.)
10
8
6
4
2
Collector - Emitter voltage : VCE [ V ]
0
5 10152025
Gate - Emitter voltage : VGE [ V ]
Ic=100A
Ic= 50A
Ic= 25A
10V
8V
[ Brake ] [ Brake ]
Capacitance vs. Collector-Emitter voltage (typ.) Dynamic Gate charge (typ.)
10.00
Cies
1.00
0.10
Capacitance : Cies, Coes, Cres [ nF ]
0.01
0102030
Collector-Emitter voltage : VCE [V]
Coes
Cres
Vcc=300V, Ic=50A, Tj= 25°CVGE=0V, f= 1MHz, Tj= 25°C
500
400
300
VGE
200
100
Collector-Emitter voltage : VCE [ V ]
0
0 50 100 150 200 250
VCE
Gate charge : Qg [ nC ]
25
20
15
10
5
Gate - Emitter voltage : VGE [ V ]
0
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IGBT Module 7MBR100U2B060
Outline Drawings, mm
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