Fuji Electric 7MBP75TEA-120 Data Sheet

7MBP75TEA120

Econo IPM series

Features

· T emperature protection provided by directly detecting the junction
temperature of the IGBTs

· Low power loss and soft switching

· High performance and high reliability IGBT with overheating protection

· Higher reliability because of a big decrease in number of parts in
built-in control circuit

Maximum ratings and characteristics

Absolute maximum ratings(at Tc=25°C unless otherwise specified)

Item

Bus voltage DC
Surge
Short operating
Collector-Emitter voltage *1
Collector current DC
1ms
DC
Collector power dissipation One transistor *3
Collector current DC
1ms
Forward current diode
Collector power dissipation One transistor *3

Brake Inverter

Supply voltage of Pre-Driver *4
Input signal voltage *5
Input signal current
Alarm signal voltage *6
Alarm signal current *7
Junction temperature
Operating case temperature
Storage temperature
Solder temperature *8
Isolating voltage (Terminal to base, 50/60Hz sine wave 1min.)
Screw torque Mounting (M5)

Symbol Rating Unit

VDC
VDC(surge)
VSC
VCES
IC
ICP

-IC
PC
IC
ICP
IF
PC
VCC
Vin
Iin
VALM
IALM
Tj
Topr
Tstg
Tsol
Viso

0
0
400
0

-

-

-

-

-

-

-

-

-0.5

-0.5

-

-0.5

-

-

-20

-40

-

-

-

1200V / 75A 7 in one-package

Min. Max.

900

1000
800
1200
75
150
75
368
25
50
25
212

20
Vcc+0.5
3
Vcc
20
150
100
125
260
AC2500

3.5

V
V
V
V
A
A
A
W
A
A
A
W
V
V
mA
V
mA
°C
°C
°C
°C
V
N·m

Note

*1 : Vces shall be applied to the input voltage between terminal P and U or ‚V or W or DB, N and U or V or W or DB
*2 : 125

°C/FWD Rth(j-c)/(Ic x VF MAX)=125/0.61/(75 x 2.0) x 100>100%

*3 : Pc=125°C/IGBT Rth(j-c)=125/0.34=368W [Inverter]
Pc=125

°C/IGBT Rth(j-c)=125/0.59=212W [Brake]

*4 : VCC shall be applied to the input voltage between terminal No.4 and 1, 8 and 5, 12 and 9, 14 and 13

*5 : Vin shall be applied to the input voltage between terminal No.3 and 1, 7 and 5, 1 1 and 9, 16,17,18 and 13.

*6 :VALM shall be applied to the voltage between terminal No.2 and 1, No6 and 5, No10 and 9, No.19 and 13.
*7 : IALMshall be applied to the input current to terminal No.2,6,10 and 19.

*8 : Immersion time 10

±1sec.

7MBP75TEA120

Electrical characteristics (at Tc=Tj=25°C, Vcc=15V unless otherwise specified.)
Main circuit

Collector current at off signal input
Collector-Emitter saturation voltage

Forward voltage of FWD

Inverter

Collector current at off signal input
Collector-Emitter saturation voltage

Forward voltage of Diode

Brake

Turn-on time
Turn-off time
Reverse recovery time

Control circuit

Supply current of P-line side pre-driver(one unit)
Supply current of N-line side pre-driver
Input signal threshold voltage (on/off)

Input zener voltage
Alarm signal hold time

Current limit resistor

Item Symbol Condition Min. Typ. Max. Unit

ICES
VCE(sat)

VF

ICES
VCE(sat)

VF

ton VDC=600V,Tj=125°C
toff IC=75A Fig.1, Fig.6
trr VDC=600V, IF=75A Fig.1, Fig.6

Item Symbol Condition Min. Typ. Max. Unit

Iccp
ICCN
Vin(th)

VZ
tALM

RALM

VCE=1200V Vin terminal open.
Ic=75A

-Ic=75A

VCE=1200V Vin terminal open.
Ic=25A

-Ic=25A

Switching Frequency : 0 to 15kHz
Tc=-20 to 125°C Fig.7
ON
OFF
Rin=20k ohm
Tc=-20°C Fig.2
T c=25°C Fig.2
T c=125°C Fig.2
Alarm terminal

T erminal
Chip
T erminal
Chip

T erminal
Chip
T erminal
Chip

IGBT-IPM

- - 1.0 mA

- - 3.1 V

- 2.2 -

- - 2.0 V

- 1.6 -

- - 1.0 mA

- - 2.6 V

- 1.9 -

- - 3.7 V

- 2.3 -

1.2 - - µs

- - 3.6

- - 0.3

-

-

1.00

1.25

-

1.1

-

­1425

-

-

1.35

1.60

8.0

-

2.0

­1500

15
45

1.70

1.95

-

-

-

4.0
1575

ohm

mA
mA

V
V

V
ms
ms
ms

Protection Section ( Vcc=15V)

Item Symbol Condition Min. Typ. Max. Unit

Over Current Protection Level of Inverter circuit
Over Current Protection Level of Brake circuit
Over Current Protection Delay time
SC Protection Delay time
IGBT Chip Over Heating
Protection Temperature Level
Over Heating Protection Hysteresis
Under Voltage Protection Level
Under Voltage Protection Hysteresis

IOC
IOC
tDOC
tSC
TjOH

TjH
VUV
VH

Tj=125°C
Tj=125°C
Tj=125°C
Tj=125°C Fig.4
Surface of IGBT chips

113 - ­ 38 - -

-5-

--8
150 - -

-20 ­ 11 .0 - 12.5

0.2 0.5 -

Thermal characteristics( Tc=25°C)

Item Symbol Min. Typ. Max. Unit

Junction to Case thermal resistance *9

Case to fin thermal resistance with compound

*9 For 1device, Case is under the device

Inverter IGBT
FWD
Brake IGBT

Rth(j-c)
Rth(j-c)
Rth(j-c)
Rth(c-f)

- - 0.34

- - 0.61

- - 0.59

- 0.05 -

Noise Immunity ( VDC=300V , Vcc=15V, Test Circuit Fig.5)

Item Condition Min. Typ. Max. Unit

Common mode rectangular noise

Common mode lightning surge

Pulse width 1µs, polarity ±,10minuets
Judge : no over-current, no miss operating
Rise time 1.2µs, Fall time 50µs
Interval 20s, 10 times
Judge : no over-current, no miss operating

±2.0 - -

±5.0 - -

Recommendable value

Item Symbol Min. Typ. Max. Unit

DC Bus Voltage
Operating Supply Voltage of Pre-Driver
Screw torque (M5)

VDC
VCC

-

- - 800 V

13.5 15.0 16.5 V

2.5 - 3.0 Nm

Weight

Item Symbol Min. Typ. Max. Unit

Weight Wt - 270 - g

A
A
µs
µs
°C
°C
V
V

°C/W
°C/W
°C/W
°C/W

kV

kV

7MBP75TEA120 IGBT-IPM

Vin(th)

/Vin

/Vin

/ALM

/ALM

Vin(th)

90%

90%

ton

ton

trr

trr

On

On

90%

90%

50%

50%

Figure 1. Switching Time Waveform Definitions

off

off

on

on

t

t

ALM >

ALM >

Gate On

Gate On

normal

normal

on

on

Gate Off

Gate Off

alarm

alarm

t

t

ALM >

ALM >

123

123

Fault : O ver-current, Over -heat or Un der- volt age

Fault : O ver-current, Over -heat or Un der- volt age

Figure 2. Input/Output Timing Diagram

Max.

Max.

Vin(th)

Vin(th)

toff

toff

off

off

10%

10%

tsc

tsc

t

t

ALMMax.

ALMMax.

2ms (typ.)

2ms (typ.)

Vin

Vin

Ic

Ic

Vge(Inside IPM )

Vge(Inside IPM )

Fault (Inside IPM )

Fault (Inside IPM )

DC

DC
15V

15V

DC

DC
15V

15V

SW1

SW1

SW2

SW2

Earth

Earth

VccU

VccU

20k

20k

GNDU

GNDU

20k

20k

VinU

VinU

Vcc

Vcc
VinX

VinX

GND

GND

Ic

Ic

I

I

ALM

ALM

IPM

IPM

CT

CT

P

P

U

U

V

V

W

W

N

N

Cooling

Cooling
Fin

Fin

Ic

Ic

ALM

ALM

I

I

Figure.4 Definition of tsc

AC200V

AC200V

+

+

4700p

4700p

AC400V

Noise

Noise

Ic

Ic

ALM

ALM

I

I

Vcc

DC

DC
15V

15V

HCPL-

HCPL­4504

4504

Vcc

20k

20k

Vin

Vin

-

-

GND

GND

IPM

IPM

IPM

IPM

P

P

P

P

N

N

N

N

L

L

+

+

+

+

Ic

Ic

Figure 6. Switching Characteristics Test Circuit

Icc

DC

DC
15V

15V

Icc

P.G

P.G
+8V

+8V
fsw

fsw

A

A

Vcc

Vcc

Vin

Vin

GND

GND

IPM

IPM

P

P
U

U
V

V
W

W
N

N

DC

DC
300V

300V

600V

Figure 5. Noise Test Circuit

Figure 7. Icc Test Circuit

7MBP75TEA120 IGBT-IPM

Block diagram

P

VccU

VccU

VinU

VinU
ALMU

ALMU

GNDU

GNDU

VccV

VccV

VinV

VinV
ALMV

ALMV

GNDV

GNDV

VccW

VccW

VinW

VinW
ALMW

ALMW

GNDW

GNDW

Vcc

Vcc

VinX

VinX

GND

GND

VinY

VinY

4

44

3

3
2

2

ALM

ALM

R

R

1.5k

1.5k

1

1

8

8

7

7
6

6

ALM

ALM

R

R

1.5k

1.5k

5

5

12

12

11

11

10

10

ALM

ALM

1.5k

1.5k

R

R

9

9

14

14

16

16

13

13

17

17

Pre-Driver

Pre-DriverPre-Driver

Pre-Driver

Pre-DriverPre-Driver

Vz

Vz

Pre-Driver

Pre-DriverPre-Driver

Pre-Driver

Pre-DriverPre-Driver

Vz

Vz

Pre-Driver

Pre-DriverPre-Driver

Pre-Driver

Pre-DriverPre-Driver

Vz

Vz

Pre-Driver

Pre-DriverPre-Driver

Pre-Driver

Pre-DriverPre-Driver

Vz

Vz

Pre-Driver

Pre-DriverPre-Driver

Pre-Driver

Pre-DriverPre-Driver

Vz

Vz

P

U

U

V

V

W

W

VinZ

VinZ

18

18

VinDB

VinDB

15

15

ALM

ALM

19

19

ALM

ALM

R

R

1.5k

1.5k

Outline drawings, mm

Package Type : P622

Pre-DriverPre-Driver

Vz

Vz

B

B

Pre-Driver

Pre-DriverPre-Driver

Pre-Driver

Pre-DriverPre-Driver

Vz

Vz

N

N

1.Amplifier for driver

2.Short circuit protection

3.Under voltage lockout circuit

4.Over current protection

5.IGBT chip over heating protection

Pre-Driver

Pre-drivers include following functions

Pre-DriverPre-Driver

Pre-Driver

MBC F M

Mass : 270g

7MBP75TEA120

Characteristics

Control circuit characteristics (Representative)

IGBT-IPM

Power supply current vs. Switching fr equency

Tc=125°C (typ.)

50

P-side

40

30

20

10

Power supply current : Icc (mA)

0

0 5 10 15 20 25

N-side

Switching frequency : fsw (kHz)

Vcc=17V
Vcc=15V
Vcc=13V

Vcc=17V
Vcc=15V

Vcc=13V

Under vol tage vs. Junct ion temperatur e ( t y p.)

14

12

10

Input signal thr eshold voltage

vs. Power supply voltage (typ.)

2.5

2

} Vin(off )

1.5

1

: Vin(on),Vin(off) (V)

Input signal threshold voltage

0.5

0

12 13 14 15 16 17 18

Power supply voltage : Vcc (V)

Under volta ge hyste r isis vs. Jnc tio n temper a t ure (t yp. )

1

0.8

} Vin(on)

Tj=25°C
Tj=125°C

8

6

4

Under voltage : VUVT (V)

2

0

20 40 60 80 100 120 140

Junction temperature : Tj (°C)

Alarm hold ti m e v s. Power supply v oltage (typ.)

3

2.5
Tc=100°C

Alarm hold time : tALM (mSec)

2

1.5

1

0.5

Tc=25°C

0.6

0.4

0.2

Unde r vo ltage h ys terisis : VH (V)

0

20 40 60 80 100 120 140

Junction temperature : Tj (°C)

Over heating characteristics

TjOH,TjH vs. Vcc (typ.)

200

TjOH

150

100

OH hysterisis : TjH (°C)

50

Over heating protection : TjOH (°C)

TjH

0

12 13 14 15 16 17 18

Power supply voltage : Vcc (V)

0

12 13 14 15 16 17 18

Power supply voltag e : Vcc (V)

7MBP75TEA120 IGBT-IPM

Main circuit characteristics (Representative)

Collector curr ent vs. Collector-Em itter voltage (typ.)

Tj=25°C(Chip)

150

125

100

75

50

Collector Current : Ic (A)

25

0

0 0.5 1 1.5 2 2.5 3 3.5 4

Col le c to r -Em itt e r voltag e : Vc e (V )

Vcc=17V

Vcc=15V

Vcc=13V

Collector current vs. Collector-Emitter voltage (typ.)

Tj=125°C(Chip)

150

125

Vcc=15V

Collector current vs. Collector-Emitter voltage (typ.)

Tj=25°C(Terminal)

150

125

100

75

50

Collector Current : Ic (A)

25

0

0 0.5 1 1.5 2 2.5 3 3.5 4

Col le c to r -Em itt e r voltag e : Vc e (V )

Vcc=17V

Vcc=15V

Vcc=13V

Collector current vs. Collector-Emitter voltage (typ.)

Tj=125°C(Terminal)

150

125

Vcc=15V

100

75

50

Collector Current : Ic (A)

25

0

00.511.522.533.54
Collector-Emitter voltage : Vce (V)

Vcc=17V

Vcc=13V

Forward current vs. Forward voltage (typ.)

(Chip)

150

125

100

75

50

Forward Current : If (A)

25

25°C

125°C

100

75

50

Collector Current : Ic (A)

25

0

0 0.5 1 1.5 2 2.5 3 3.5 4

Col le c to r -Em itt e r voltag e : Vc e (V )

Vcc=17V

Vcc=13V

Forward current vs. Forward volt age (typ.)

(Terminal)

150

125

100

75

50

Forward Current : If (A)

25

25°C

125°C

0

0 0.5 1 1.5 2 2.5

Forward voltage : Vf (V)

0

0 0.5 1 1.5 2 2.5

Forward voltage : Vf (V)

7MBP75TEA120

IGBT-IPM

Switching Loss vs. Collector Current (typ.)

C

35

Edc=600V,Vcc=15V ,Tj=25

30

25

20

15

10

5

Switching loss : E on,Eoff,Err (m J /cyc le)

0

0 25 50 75 100 125

Collector curr ent : Ic (A )

Reversed biased safe operating area

700

600

500

Vcc=15 V,T j<=1 25° C( m in.)

°

Eon

Eoff

Err

Switching Loss vs. Collector Current (typ.)

Edc=600V,Vcc=15V,Tj=125°C

35

30

25

20

15

10

5

Switching loss : Eon,Eo ff,Err (mJ/cycle)

0

0 255075100125

Collector current : Ic (A)

Transient thermal resistance (max.)

1

Eon

Eoff

Err

FW D

400

SCSOA

300

Collector current : Ic (A)

200

100

0

0 200 400 600 800 1 000 1200 1400

(non-r epetitive pulse)

RBSOA
(Re pe titive pulse)

Collector-Emitter voltage : Vce (V)

Power derating for IGBT (max.)

(per device)

500

400

300

200

IGBT

0.1

Thermal resistance : Rth(j-c) (°C/W )

0.01

0.001 0.01 0.1 1
Pulse width :Pw (sec)

Power derating for FWD (max.)

(per device)

250

200

150

100

100

Collecter Power Diss ipa ti o n : Pc (W)

0

0 20 40 60 80 100 120 140 160

Case Temperature : Tc (°C)

50

Collecter Power Dissipation : Pc (W)

0

0 20 40 60 80 100 120 140 160

Case Temperature : Tc (°C)

7MBP75TEA120 IGBT-IPM

Sw itc hin g ti m e v s. C o ll ec tor cur ren t (ty p. )

Edc=600V,Vcc=15V,Tj=25

10000

1000

100

Switching time : ton,toff,tf (nSec)

10

0 20 40 60 80 100 1 20 140

Collector current : Ic (A)

Reverse recovery characteristics (typ.)

trr,Irr vs.IF

C

°

toff

ton

tf

trr125°C

Sw itc h in g ti m e v s . Co lle c tor cu rren t (ty p. )

Edc=600V,Vcc=15V,Tj=125°C

10000

1000

100

Switching time : ton,toff,tf (nSec)

10

0 20406080100120140

Collector current : Ic (A)

toff

ton

tf

100

trr25°C

Irr125°C

Irr25°C

10

Reverse recovery current:Irr(A)

Reverse recovery time:trr(nsec)

1

0 20 40 60 80 100 120 140

Forward current:IF(A)

7MBP75TEA120 IGBT-IPM

Characteristics

Dynamic Brake Characteristics (Representative)

Collector curr ent vs. Collector-Em itter voltage (typ.)

Tj=25°C

80

60

Vcc=17V

40

Collector Current : Ic (A)

20

0

00.511.522.533.5
Col le c to r -Em itt e r voltag e : Vc e (V )

Transient thermal resistance (max.)

1

Vcc=15V

Vcc=13V

IGB T

Collector curr ent vs. Collector-Em itter voltage (typ.)

Tj=125°C

80

60

Vcc=17V

40

Collector Current : Ic (A)

20

0

00.511.522.533.5
Col le c to r -Em itt e r voltag e : Vc e (V )

Reversed biased safe operating area

350

300

Vcc=15V,Tj<=125°C (min.)

Vcc=15V

Vcc=13V

0.1

Therm al r esistance : Rth(j-c ) (°C /W )

0.01

0.001 0.01 0.1 1

Pulse width :Pw (sec)

Power derating for IGBT (max.)

(per device)

250

200

150

100

250

200

150

Collector current : Ic (A)

100

50

0

0 200 400 600 800 1000 1200 1400

SCSOA
(non-repetitive pulse)

RBSOA
(R epetitive p u ls e )

Collector-Emitter voltage : Vce (V)

50

Collecter Power Diss ipa ti o n : Pc (W)

0

0 20 40 60 80 100 120 140 160

Case Temperature : Tc (°C)