Fuji Electric 7MBP75RTB-060 SPECIFICATION

SPECIFICATION

Device Name :

Type Name :

Spec. No. :

IGBT - IPM

7MBP75RTB060

MS6M 0653

Sep. 17 '02

Sep.-17 -'02

K.Sekigawa

Nishiura

K.Yamada

T.Fujihira

Fuji Electric Co.,Ltd. Matsumoto Factory

MS6M 0653

a

1

23

H04-004-07

R e v i s e d R e c o r d s

Date

Sep.-17-'02

Apr.-09-'03

Classi-

fication Ind. Content

enactment

a

Revision

Reliability Test Items.

Applied

date Drawn Checked Approved

Issued

date

Apr.-09-'03

Nishiura

K.Yamada

T.Miyasaka

K.Yamada

T.FujihiraK.Sekigawa

T.FujihiraN.Matsuda

MS6M 0653

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H04-004-06

7MBP75RTB060

1. Outline Drawing ( Unit : mm )

Package type : P610

±0.3

±0.3±0.3

±0.3

2

22

2

20

2020

±1

±1±1

±1

±0.3

±0.3±0.3

±0.3

88

8888

88

74

7474

74

10

1010

10

2020

2017

1717

17

0.5

0.50.5

0.5

13.8

13.813.8

3.22

3.223.22

a

±0.3

±0.3±0.3

±0.2

±0.2 ±0.2

±0.2±0.2

10.16

10.16 10.16

10.1610.16

±0.3

±0.3±0.3

±0.15

±0.15 ±0.15

±0.15±0.15

5.08

5.085.08

11114

5.08

5.085.08

47

44

B

P

N

W

±1

±1±1

109

109109

±0.3

±0.3±0.3

95

9595

67.4

67.467.4

±0.2 ±0.2

±0.2±0.2

10.16

10.1610.16

10.16

10.1610.16

±0.15 ±0.15

±0.15±0.15

±0.15

±0.15±0.15

5.08

5.085.08

710

77

V

±0.2 ±0.25

±0.2±0.2

10 16

1010

15.24

15.2415.24

2.54

2.542.54

±0.25

±0.25±0.25

±0.1

±0.1±0.1

16

1616

U

4-φ

5.5

4-φ4-φ

5.5 5.5

+1.0

+1.0+1.0

+1.0

-0.3

-0.3-0.3

-0.3

22

2222

22

+1.0

+1.0+1.0

+1.0

-0.2

-0.2-0.2

-0.2

8

88

8

6-M5

3.22

3.223.22

φφφφ

0.5

0.50.5

±0.3

±0.3±0.3

2.5

2.52.5

( φ 1 ～ 1.5)

(1～ 2)

24

24 26

2424

Lot No.

Indication of Lot No.

±0.1

±0.1±0.1

2.54

2.54 2.54

2.542.54

2.543.22

2.542.54

2222 22222222

□ 0.64

26 26

2626

±0.1

±0.1±0.1

4.5

4.54.5

4.5

10

1010

10

±0.3

±0.3±0.3

8

88

8

1

11

1

260.5

2626

16-

16- 2-φ

16-16-

2-φ

0.64

0.64 2.5

0.640.64

2.5

2-φ2-φ

2.52.5

Odered No. in monthly Manufactured month

(Jan.～Sep.:1～9,Oct.:O,Nov.:N,Dec.:D) Last digit of manufactured year

0.1max

0.1max0.1max

0.1max

14.5

14.514.5

14.5

7

77

7

17

1717

17

+1.0

+1.0+1.0

+1.0

9

99

9

-0.3

-0.3-0.3

-0.3

22

2222

22

31

3131

31

Details of control terminals

Dimensions in mm

MS6M 0653

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H04-004-03

2．Pin Descriptions

Main circuit

Control circuit

Symbol

P

U

V

W

N

B

№ Symbol Description

① GNDU High side ground (U).

② VinU Logic input for IGBT gate drive (U).

③ VccU High side supply voltage (U).

④ GNDV High side ground (V).

Positive input supply voltage.

Output (U).

Output (V).

Output (W).

Negative input supply voltage.

Collector terminal of Brake IGBT.

Description

⑤ VinV Logic input for IGBT gate drive (V).

⑥ VccV High side supply voltage (V).

⑦ GNDW High side ground (W).

⑧ VinW Logic input for IGBT gate drive (W).

⑨ VccW High side supply voltage (W).

⑩ GND Low side ground.

⑪ Vcc Low side supply voltage.

⑫ VinDB Logic input for Brake IGBT gate drive.

⑬ VinX Logic input for IGBT gate drive (X).

⑭ VinY Logic input for IGBT gate drive (Y).

⑮ VinZ Logic input for IGBT gate drive (Z).

⑯ ALM Low side alarm signal output.

MS6M 0653

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H04-004-03

3. Block Diagram

3

cV

3

2

1

6

5

4

9

8

7

11

VccU

VinU

GNDU

VccV

VinV

GNDV

VccW

VinW

GNDW

Vcc

P

Pre-Driver

V

Z

U

Pre-Driver

V

Z

V

Pre-Driver

V

Z

W

VinX

GND

VinY

VinZ

VinDB

ALM

Pre-Driver

13

V

10

14

V

15

V

12

V

R

ALM

16

ALM

1. 5k

Ω

Pre-Driver

Z

Pre-Driver

Z

Pre-Driver

Z

Pre-Driver

Z

Over heating prot ect ion

circuit

B

N

Pre-drivers include following functions

1 Amplifier for driver

2 Short circuit protection

3 Under voltage lockout circuit

4 Over current protection

5 IGBT chip over heating protection

MS6M 0653

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H04-004-03

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4．Absolute Maximum Ratings

Tc＝25℃ unless otherwise specified.

Items

Bus Voltage

(between terminal P and N)

DC

Surge

Shortoperating Vsc 200 400 V

Collector-Emitter Voltage *1

DC Ic - 75 A

Collector Current

Inverter

Collector Power Dissipation One transistor *3 Pc - 198 W

Collector Current

Forward Current of Diode

Brake

Collector Power Dissipation One transistor *3 Pc - 198 W

1ms Icp - 150 A

Duty=75.0 % *2 -Ic - 75 A

DC Ic - 50 A

1ms Icp - 100 A

Supply Voltage of Pre-Driver *4

Input Signal Voltage *5

Input Signal Current

Alarm Signal Voltage *6

Alarm Signal Current *7

Junction Temperature

Operating Case Temperature

Storage Temperature

Isolating Voltage

(Terminal to base, 50/60Hz sine wave 1min.) *8 Screw Torque Terminal　(M5)

Mounting　(M5)

Symbol Min. Max. Units

V

DC

V

DC(surge)

Vces 0 600 V

IF - 50 A

Vcc -0.5 20 V

Vin -0.5 Vcc+0.5 V

Iin - 3 mA

VALM -0.5 Vcc V

ＩALM

Tj - 150

Topr -20 100

Tstg -40 125

Viso - AC2500

-

0 450 V

0 500 V

-20mA

℃ ℃ ℃

V

Nm3.5-

Note

*1 ：Vces shall be applied to the input voltage between terminal P and U or Ｖ or W or DB, N and U

or V or W or DB

*2 ： 125℃/FWD Rth(j-c)/(Ic×VF MAX)=125/0.855/(75×2.6)×100=75.0%

*3 ： Pc=125℃/IGBT Rth(j-c)=125/0.63=198W [Inverter]

Pc=125℃/IGBT Rth(j-c)=125/0.63=198W [Break]

*4 ： VCC shall be applied to the input voltage between terminal No.3 and 1,6 and 4, 9 and 7,

11 and 10.

*5 ： Vｉｎ shall be applied to the input voltage between terminal No.2 and 1, 5 and 4, 8 and 7,

13,14,15 and 10.

*6 ：

ＶＡＬＭ

*7 ：

ＩＡＬＭ

*8 ： 50Hz/60Hz sine wave 1 minute.

shall be applied to the voltage between terminal No.16 and 10.

shall be applied to the input current to terminal No.16.

MS6M 0653

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H04-004-03

5. Electrical Characteristics

Tj＝25℃，Vcc＝15V unless ot herwis e specified.

5.1 Main circuit

Item Conditions

Collec tor Current

at off signal input Vin terminal open.

Collec tor-Emitter

InverterBrake

saturation voltage Chip - 2. 0 - V

Forward voltage of FWD

Symbol Min. Typ. Max. Units

600V

＝

Ｖ

（ｓａｔ）

ＣＥ

75A Terminal - - 2.4

Ｉｃ＝

-

75A Terminal - - 2.6

Ｉｃ＝

I

CES

V

CE

--1.0mA

VF

Chip - 1.6 - V

Collec tor Current

I

at off signal input Vin terminal open.

CES

Collec tor-Emitter

V

CE

saturation voltage Chip - 1.75 - V

（ｓａｔ）

600V

＝

Ｖ

ＣＥ

50A Terminal - - 2.2

Ｉｃ＝

-

50A Terminal - - 3.3

Ｉｃ＝

--1.0

mA

Forward voltage of Diode VF

Chip - 1.9 - V

Turn-on time ton V

300V、Tj= 125

＝

DC

℃

1.2 - -

Turn-off tim e toff Ic＝75A　Fig.1，Fig.6 - - 3. 6 us

Reverse recovery time

trr V

DC

＝

300V

0.3--

IF＝75A　 Fig.1，Fig.6

Ｖ

AV

P

internal wiring

Maximum AvalancheEnergy inductance＝50nH 40 - - mJ

(A non-repetit ion)

Main c ircuit wiring

inductance＝54nH

5.2 Control c ircuit

Item Conditions

Symbol Min. Typ. Max. Units

Supply c urrent Switching Frequency

of P-side pre-driver (one unit)

Iccp

: 0～15kHz

mA--18

Supply c urrent Iccn Tc＝-20～125℃ Fig.7

--65

mA

of N-side pre-driver

ON 1 1.35 1.7

Vin(th)Input signal threshold voltage

V

OFF 1.25 1.6 1.95

Input Zener Voltage Vz Rin＝20kΩ -8.0- V

Tc＝-20℃　Fig.2 1.1 - -

Alarm Signal Hold Time tALM Tc＝25℃　Fig.2 - 2. 0 - ms

Tc＝125℃　Fig.2 - - 4.0

Current Limit Resis tor RALM Alarm terminal 1425 1500 1575 Ω

MS6M 0653

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H04-004-03

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