Fuji Electric 7MBP75RA-120 Data Sheet

7MBP75RA120

IGBT-IPM R series

Features

· T emperature protection provided by directly detecting the junction
temperature of the IGBTs

· Low power loss and soft switching

· Compatible with existing IPM-N series packages

· High performance and high reliability IGBT with overheating protection

· Higher reliability because of a big decrease in number of parts in
built-in control circuit

Maximum ratings and characteristics

Absolute maximum ratings(at Tc=25°C unless otherwise specified)

Item

DC bus voltage
DC bus voltage (surge)
DC bus voltage (short operating)
Collector-Emitter voltage
DB Reverse voltage
INV Collector current DC
1ms
DC
Collector power dissipation One transistor
DB Collector current DC
1ms
Forward current of Diode
Collector power dissipation One transistor
Junction temperature
Input voltage of power supply for Pre-Driver
Input signal voltage
Input signal current
Alarm signal voltage
Alarm signal current
Storage temperature
Operating case temperature
Isolating voltage (Case-Terminal)
Screw torque Mounting (M5)
Terminal (M5)

Symbol Rating Unit

Min. Max.

VDC
VDC(surge)
VSC
VCES
VR
IC
ICP

-IC
PC
IC
ICP
IF
PC
Tj
VCC *1
Vin *2
Iin
VALM *3
IALM *4
Tstg
Top
Viso *5

0
0
200
0

-

-

-

-

-

-

-

-

-

­ 0
0

­ 0

-

-40

-20

-

-

-

900

1000
800
1200
1200
75
150
75
500
25
50
25
198
150
20
Vz
1
Vcc
15
125
100

AC2.5

3.5 *6

3.5 *6

1200V / 75A 7 in one-package

V
V
V
V
V
A
A
A
W
A
A
A
W
°C
V
V
mA
V
mA
°C
°C
kV
N·m
N·m

Fig.1 Measurement of case temperature

*1 Apply Vcc between terminal No. 3 and 1, 6 and 4, 9 and 7, 11 and 10.
*2 Apply Vin between terminal No. 2 and 1, 5 and 4, 8 and 7, 12,13,14,15 and 10.
*3 Apply VALM between terminal No. 16 and 10.
*4 Apply I
*5 50Hz/60Hz sine wave 1 minute.
*6 Recommendable Value : 2.5 to 3.0 N·m

ALM to terminal No. 16.

Electrical characteristics of power circuit (at Tc=Tj=25°C, Vcc=15V)

Item Symbol Condition Min. Typ. Max. Unit

INV Collector current at off signal input
Collector-Emitter saturation voltage
Forward voltage of FWD
DB Collector current at off signal input
Collector-Emitter saturation voltage
Forward voltage of Diode

ICES
VCE(sat)
VF
ICES
VCE(sat)
VF

VCE=1200V input terminal open
Ic=75A

-Ic=75A
VCE=1200V input terminal open
Ic=25A

-Ic=25A

– – 1.0 mA
– – 2.6 V
– – 3.0 V
– – 1.0 mA
– – 2.6 V
– – 3.3 V

7MBP75RA120

IGBT-IPM

Electrical characteristics of control circuit(at Tc=Tj=25°C, Vcc=15V)

Item Symbol Condition Min. Typ. Max. Unit

Power supply current of P-line side Pre-driver(one unit)
Power supply current of N-line side three Pre-driver
Input signal threshold voltage (on/off)

Input zener voltage
Over heating protection temperature level
Hysteresis
IGBT chips over heating protection temperature level
Hysteresis
Collector current protection level INV
DB
Over current protection delay time (Fig.2)
Under voltage protection level
Hysteresis
Alarm signal hold time
SC protection delay time
Limiting resistor for alarm
*7 Switching frequency of IPM

Iccp
ICCN
Vin(th)

VZ
TCOH
TCH
TjOH
TjH
IOC
IOC
tDOC
VUV
VH
tALM
tSC
RALM

fsw=0 to 15kHz Tc=-20 to 100°C *7
fsw=0 to 15kHz Tc=-20 to 100°C *7
ON
OFF
Rin=20k ohm
VDC=0V, Ic=0A, Case temperature, Fig.1

surface of IGBT chips

Tj=125°C
Tj=125°C
Tj=25°C Fig.2

Tj=25°C Fig.3

3
10

1.00

1.25

­ 110

­ 150

­ 113
38

-

11.0

0.2

1.5

­1425

-

-

1.35

1.60

8.0

­ 20

­ 20

-

­ 10

-

­ 2

­1500

18
65

1.70

1.95

­ 125

-

-

-

-

-

-

12.5

-

­ 12
1575

mA
mA
V
V
V
°C
°C
°C
°C
A
A
µs
V
V
ms
µs
ohm

Dynamic characteristics(at Tc=Tj=125°C, Vcc=15V)

Item Symbol Condition Min. Typ. Max. Unit

Switching time (IGBT)

Switching time (FWD)

ton IC=75A, VDC=600V
toff
trr IF=75A, VDC=600V

0.3 - -

- - 3.6

- - 0.4

µs
µs
µs

Thermal characteristics(Tc=25°C)

Item Symbol Typ. Max. Unit

Junction to Case thermal resistance

Case to fin thermal resistance with compound

INV IGBT
FWD
DB IGBT

Rth(j-c)
Rth(j-c)
Rth(j-c)
Rth(c-f)

- 0.25

- 0.73

- 0.63

0.05 -

°C/W
°C/W
°C/W
°C/W

Recommendable value

Item Symbol Min. Typ. Max. Unit

DC bus voltage
Operating power supply voltage range of Pre-driver
Switching frequency of IPM
Screw torque Mounting (M5)
Terminal (M5)

VDC 200 - 800 V
VCC 13.5 15 16.5 V
fSW 1 - 20 kHz

- 2.5 - 3.0 N·m

- 2.5 - 3.0 N·m

7MBP75RA120

Block diagram

IGBT-IPM

Pre-drivers include following functions
a) Amplifier for driver
b) Short circuit protection
c) Undervoltage lockout circuit
d) Over current protection
e) IGBT chip over heating protection

Outline drawings, mm

Mass : 440g

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Characteristics (Representative)

Control Circuit

IGBT-IPM

Power supply current vs. Switching frequency

Tj=100°C

50

P-side

40

30

20

Power supply current : Icc (mA)

10

0

0 5 10 15 20 25

N-side

Switching frequency : fsw (kHz)

Under voltage vs. Junction temperature

14

12

10

8

Vcc=17V

Vcc=15V

Vcc=13V

Vcc=17V
Vcc=15V
Vcc=13V

Inpu t s ignal thres h old v o ltage

vs. Power suppl

2.5

2

1.5

1

: Vin(on),Vin(off) (V)

Input signal threshold voltage

0.5

0

12 13 14 15 16 17 18

Power supply voltage : Vcc (V)

voltage

Under voltage hysterisis vs. Jnction temperature

1

0.8

0.6

Tj=25°C
T

=125°C

} Vin(off)

} Vin(on)

6

4

Under voltage : VUVT (V)

2

0

20 40 60 80 100 120 140

Junction temperature : Tj (°C)

Alarm hold time vs. Power supply voltage

3

2.5
Tj=125°C

2

1.5

1

Alarm hold time : tALM (mSec)

0.5

0

12 13 14 15 16 17 18

Power supply voltage : Vcc (V

Tj=25°C

0.4

0.2

Under voltage hysterisis : VH (V)

0

20 40 60 80 100 120 140

Junction temperature : Tj (°C)

Over heating characteris t i c s

200

TcOH,T

150

100

50

OH hysterisis : TcH,TjH (°C)

Over heating protection : TcOH,TjOH (°C)

0

12 13 14 15 16 17 18

OH,TcH,TjH vs. Vcc

TjOH

TcOH

TcH,TjH

Power supply voltage : Vcc (V)

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IGBT-IPM

Collector current vs. Collector-Emitter vol tage

Tj=25°C

120

100

80

60

40

Collector Current : Ic (A)

20

0

0 0.5 1 1.5 2 2.5 3

Vcc=17V

Collector-Emitter voltage : Vce (V)

Switching time vs. Collector current

Edc=600V,Vcc=15V,Tj=25°C

10000

Vcc=15V

Vcc=13V

Collector current vs. Collector-Emitter voltage

Tj=125°C

120

100

80

60

40

Collector Current : Ic (A)

20

0

0 0.5 1 1.5 2 2.5 3

Collector-Emitter voltage : Vce (V)

Switching time vs. Collector current

10000

Edc=600V,Vcc=15V,T

=125°C

Vcc=15V

Vcc=17V

Vcc=13V

toff

1000

100

ton

tf

Switching time : ton,toff,tf (nSec)

10

020406080100120

Collector current : Ic (A)

Forward current vs. Forward voltage

120

125°C

100

80

60

25°C

1000

Switching time : ton,toff,tf (nSec)

100

0 20 40 60 80 100 120

Collector current : Ic (A

Reverse recovery characteristics

trr,Ir r vs. IF

1000

100

toff

ton

tf

trr125°C

trr25°C

40

Forward Current : If (A)

20

0

0 0.5 1 1.5 2 2.5 3

Forward voltage : Vf (V

Reverse recovery current : Irr(A)

Reverse recovery time : trr(nSec)

10

0 20 40 60 80 100 120

Forward current : IF(A

Irr125°C

Irr25°C

7MBP75RA120

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IGBT-IPM

Transient thermal resistance

1

0.1

Thermal resistance : Rth(j-c) (°C/W)

0.01

0.001 0.01 0.1 1

Pulse width :Pw (sec

Power derating for IGBT

(per device)

600

500

400

FWD

IGBT

Reversed biased safe operating area

Vcc=15V,Tj 125°C

1050

900

750

600

450

300

Collector current : Ic (A)

150

0

0 200 400 600 800 1000 1200 1400

SCSOA
(non-re pet itive pul s e)

RBSOA
(Repetitive pulse)

Collector-Emitter voltage : Vce (V)

Power derating fo r F W D

per device

200

175

150

125

300

200

100

Collecter Power Dissipation : Pc (W)

0

0 20 40 60 80 100 120 140 160

Case Temperature : Tc (°C)

Switching Loss vs. Collector Current

Edc=600V,Vcc=15V,T

35

30

25

20

15

10

5

Switching loss : Eon,Eoff,Err (mJ/cycle)

0

020406080100120

Collector current : Ic (A)

=25°C

Eon

Eoff

Err

100

75

50

Collecter Power Dissipation : Pc (W)

25

0

0 20406080100120140160

Case Temperature : Tc (°C)

Switching Loss vs. Collector Current

Edc=600V,Vcc=15V,Tj=125°C

35

30

25

20

15

10

5

Switching loss : Eon,Eoff, Err (mJ/cycle)

0

020406080100120

Collector current : Ic (A)

Eon

Eoff

Err

7MBP75RA120

Over current protection vs. Junction temperature

300

250

200

150

100

50

Over current protection level : Ioc(A)

0

0 20 4 0 60 80 100 120 140

IGBT-IPM

Vcc=15V

Junction temperature : Tj(°C)

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IGBT-IPM

Co l lector c urre nt vs. C oll e ctor-Emitte r volt age

=25°C

40

T

35

30

25

20

15

Collector Current : Ic (A)

10

5

0

0 0.5 1 1.5 2 2.5 3

Vcc=17V

Vcc=15V

Vcc=13V

Col l ector- E mitter voltage : Vce (V)

Transient thermal resistance

1

IGBT

Collector current vs. Collector-Emitter voltage

Tj=125°C

40

35

30

25

20

15

Collector Current : Ic (A)

10

5

0

0 0.5 1 1.5 2 2.5 3

Collector-Emitter voltage : Vce (V)

Vcc=17V

Reversed b iased safe operating area

Vcc=15V,T

350

300

125°C

Vcc=15V

Vcc=13V

0.1

Thermal resistance : Rth(j-c) (°C/W)

0.01

0.001 0.01 0.1 1
Pulse width :Pw (sec)

Power derating for IGBT

(per device)

250

200

150

100

250

200

150

100

Collector current : Ic (A)

50

0

0 200 400 600 800 1000 1200 1400

SCSOA
(non-repetitive pulse)

RBSOA
(Repetitiv e pulse)

Collector-Emitter voltage : Vce (V

Over current protection vs. Junction temperature

Vcc=15V

100

80

60

40

50

20

Over current protection level : Ioc(A)

Collecter Power Dissipation : Pc (W)

0

0 20 40 60 80 100 120 140 160

Case Temperature : Tc (°C)

0

0 20 40 60 80 100 120 140

Junction temperature : Tj(°C)