Fuji Electric 7MBP50RA-120 Data Sheet

7MBP50RA120

IGBT-IPM R series

Features

· T emperature protection provided by directly detecting the junction temperature of the IGBTs

· Low power loss and soft switching

· Compatible with existing IPM-N series packages

· High performance and high reliability IGBT with overheating protection

· Higher reliability because of a big decrease in number of parts in built-in control circuit

Maximum ratings and characteristics

Absolute maximum ratings(at Tc=25°C unless otherwise specified)

Item

DC bus voltage DC bus voltage (surge) DC bus voltage (short operating) Collector-Emitter voltage DB Reverse voltage INV Collector current DC 1ms DC Collector power dissipation One transistor DB Collector current DC 1ms Forward current of Diode Collector power dissipation One transistor Junction temperature Input voltage of power supply for Pre-Driver Input signal voltage Input signal current Alarm signal voltage Alarm signal current Storage temperature Operating case temperature Isolating voltage (Case-Terminal) Screw torque Mounting (M5) Terminal (M5)

Symbol Rating Unit

Min. Max.

VDC VDC(surge) VSC VCES VR IC ICP

-IC PC IC ICP IF PC Tj VCC *1 Vin *2 Iin VALM *3 IALM *4 Tstg Top Viso *5

0 0 200 0

0 0

-40

-20

900 1000 800 1200 1200 50 100 50 357 25 50 25 198 150 20 Vz 1 Vcc 15 125 100

AC2.5

3.5 *6

1200V / 50A 7 in one-package

V V V V V A A A W A A A W °C V V mA V mA °C °C kV N·m N·m

Fig.1 Measurement of case temperature

*1 Apply Vcc between terminal No. 3 and 1, 6 and 4, 9 and 7, 11 and 10. *2 Apply Vin between terminal No. 2 and 1, 5 and 4, 8 and 7, 12,13,14,15 and 10. *3 Apply VALM between terminal No. 16 and 10. *4 Apply I *5 50Hz/60Hz sine wave 1 minute. *6 Recommendable Value : 2.5 to 3.0 N·m

ALM to terminal No. 16.

Electrical characteristics of power circuit (at Tc=Tj=25°C, Vcc=15V)

Item Symbol Condition Min. Typ. Max. Unit

INV Collector current at off signal input Collector-Emitter saturation voltage Forward voltage of FWD DB Collector current at off signal input Collector-Emitter saturation voltage Forward voltage of Diode

ICES VCE(sat) VF ICES VCE(sat) VF

VCE=1200V input terminal open Ic=50A

-Ic=50A VCE=1200V input terminal open Ic=25A

-Ic=25A

– 1.0 mA – – 2.6 V – – 3.0 V – – 1.0 mA – – 2.6 V – – 3.3 V

7MBP50RA120

IGBT-IPM

Electrical characteristics of control circuit(at Tc=Tj=25°C, Vcc=15V)

Item Symbol Condition Min. Typ. Max. Unit

Power supply current of P-line side Pre-driver(one unit) Power supply current of N-line side three Pre-driver Input signal threshold voltage (on/off)

Input zener voltage Over heating protection temperature level Hysteresis IGBT chips over heating protection temperature level Hysteresis Collector current protection level INV DB Over current protection delay time Under voltage protection level Hysteresis Alarm signal hold time SC protection delay time Limiting resistor for alarm

*7 Switching frequency of IPM

Iccp ICCN Vin(th)

VZ TCOH TCH TjOH TjH IOC IOC tDOC VUV VH tALM tSC RALM

fsw=0 to 15kHz Tc=-20 to 100°C *7 fsw=0 to 15kHz Tc=-20 to 100°C *7 ON OFF Rin=20k ohm VDC=0V, Ic=0A, Case temperature Fig.1

surface of IGBT chips

Tj=125°C Tj=125°C Tj=25°C Fig.2

Tj=25°C Fig.3

3 10

1.00

1.25

110

150

75 38

11.0

0.2

1.5

1425

1.35

1.60

8.0

1500

18 65

1.70

1.95

125

12.5

12 1575

mA mA V V V °C °C °C °C A A µs V V ms µs ohm

Dynamic characteristics(at Tc=Tj=125°C, Vcc=15V)

Item Symbol Condition Min. Typ. Max. Unit

Switching time (IGBT)

Switching time (FWD)

ton IC=50A, VDC=600V toff trr IF=50A, VDC=600V

0.3 - -

- - 3.6

- - 0.4

µs µs µs

Thermal characteristics(Tc=25°C)

Item Symbol Typ. Max. Unit

Junction to Case thermal resistance

Case to fin thermal resistance with compound

INV IGBT FWD DB IGBT

Rth(j-c) Rth(j-c) Rth(j-c) Rth(c-f)

- 0.35

- 0.85

- 0.63

0.05 -

°C/W °C/W °C/W °C/W

Recommendable value

Item Symbol Min. Typ. Max. Unit

DC bus voltage Operating power supply voltage range of Pre-driver Switching frequency of IPM Screw torque Mounting (M5) Terminal (M5)

VDC 200 - 800 V VCC 13.5 15 16.5 V fSW 1 - 20 kHz

- 2.5 - 3.0 N·m

7MBP50RA120

Block diagram

IGBT-IPM

Pre-drivers include following functions a) Amplifier for driver b) Short circuit protection c) Undervoltage lockout circuit d) Over current protection e) IGBT chip over heating protection

Outline drawings, mm

Mass : 440g

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