Fuji Electric 7MBP50RA-120 Data Sheet

7MBP50RA120

IGBT-IPM R series

Features

· T emperature protection provided by directly detecting the junction
temperature of the IGBTs

· Low power loss and soft switching

· Compatible with existing IPM-N series packages

· High performance and high reliability IGBT with overheating protection

· Higher reliability because of a big decrease in number of parts in
built-in control circuit

Maximum ratings and characteristics

Absolute maximum ratings(at Tc=25°C unless otherwise specified)

Item

DC bus voltage
DC bus voltage (surge)
DC bus voltage (short operating)
Collector-Emitter voltage
DB Reverse voltage
INV Collector current DC
1ms
DC
Collector power dissipation One transistor
DB Collector current DC
1ms
Forward current of Diode
Collector power dissipation One transistor
Junction temperature
Input voltage of power supply for Pre-Driver
Input signal voltage
Input signal current
Alarm signal voltage
Alarm signal current
Storage temperature
Operating case temperature
Isolating voltage (Case-Terminal)
Screw torque Mounting (M5)
Terminal (M5)

Symbol Rating Unit

Min. Max.

VDC
VDC(surge)
VSC
VCES
VR
IC
ICP

-IC
PC
IC
ICP
IF
PC
Tj
VCC *1
Vin *2
Iin
VALM *3
IALM *4
Tstg
Top
Viso *5

0
0
200
0

-

-

-

-

-

-

-

-

-

­ 0
0

­ 0

-

-40

-20

-

-

-

900
1000
800
1200
1200
50
100
50
357
25
50
25
198
150
20
Vz
1
Vcc
15
125
100

AC2.5

3.5 *6

3.5 *6

1200V / 50A 7 in one-package

V
V
V
V
V
A
A
A
W
A
A
A
W
°C
V
V
mA
V
mA
°C
°C
kV
N·m
N·m

Fig.1 Measurement of case temperature

*1 Apply Vcc between terminal No. 3 and 1, 6 and 4, 9 and 7, 11 and 10.
*2 Apply Vin between terminal No. 2 and 1, 5 and 4, 8 and 7, 12,13,14,15 and 10.
*3 Apply VALM between terminal No. 16 and 10.
*4 Apply I
*5 50Hz/60Hz sine wave 1 minute.
*6 Recommendable Value : 2.5 to 3.0 N·m

ALM to terminal No. 16.

Electrical characteristics of power circuit (at Tc=Tj=25°C, Vcc=15V)

Item Symbol Condition Min. Typ. Max. Unit

INV Collector current at off signal input
Collector-Emitter saturation voltage
Forward voltage of FWD
DB Collector current at off signal input
Collector-Emitter saturation voltage
Forward voltage of Diode

ICES
VCE(sat)
VF
ICES
VCE(sat)
VF

VCE=1200V input terminal open
Ic=50A

-Ic=50A
VCE=1200V input terminal open
Ic=25A

-Ic=25A

– 1.0 mA
– – 2.6 V
– – 3.0 V
– – 1.0 mA
– – 2.6 V
– – 3.3 V

7MBP50RA120

IGBT-IPM

Electrical characteristics of control circuit(at Tc=Tj=25°C, Vcc=15V)

Item Symbol Condition Min. Typ. Max. Unit

Power supply current of P-line side Pre-driver(one unit)
Power supply current of N-line side three Pre-driver
Input signal threshold voltage (on/off)

Input zener voltage
Over heating protection temperature level
Hysteresis
IGBT chips over heating protection temperature level
Hysteresis
Collector current protection level INV
DB
Over current protection delay time
Under voltage protection level
Hysteresis
Alarm signal hold time
SC protection delay time
Limiting resistor for alarm

*7 Switching frequency of IPM

Iccp
ICCN
Vin(th)

VZ
TCOH
TCH
TjOH
TjH
IOC
IOC
tDOC
VUV
VH
tALM
tSC
RALM

fsw=0 to 15kHz Tc=-20 to 100°C *7
fsw=0 to 15kHz Tc=-20 to 100°C *7
ON
OFF
Rin=20k ohm
VDC=0V, Ic=0A, Case temperature Fig.1

surface of IGBT chips

Tj=125°C
Tj=125°C
Tj=25°C Fig.2

Tj=25°C Fig.3

3
10

1.00

1.25

­ 110

­ 150

­ 75
38

-

11.0

0.2

1.5

­1425

-

-

1.35

1.60

8.0

­ 20

­ 20

-

­ 10

-

­ 2

­1500

18
65

1.70

1.95

­ 125

-

-

-

-

-

-

12.5

-

­ 12
1575

mA
mA
V
V
V
°C
°C
°C
°C
A
A
µs
V
V
ms
µs
ohm

Dynamic characteristics(at Tc=Tj=125°C, Vcc=15V)

Item Symbol Condition Min. Typ. Max. Unit

Switching time (IGBT)

Switching time (FWD)

ton IC=50A, VDC=600V
toff
trr IF=50A, VDC=600V

0.3 - -

- - 3.6

- - 0.4

µs
µs
µs

Thermal characteristics(Tc=25°C)

Item Symbol Typ. Max. Unit

Junction to Case thermal resistance

Case to fin thermal resistance with compound

INV IGBT
FWD
DB IGBT

Rth(j-c)
Rth(j-c)
Rth(j-c)
Rth(c-f)

- 0.35

- 0.85

- 0.63

0.05 -

°C/W
°C/W
°C/W
°C/W

Recommendable value

Item Symbol Min. Typ. Max. Unit

DC bus voltage
Operating power supply voltage range of Pre-driver
Switching frequency of IPM
Screw torque Mounting (M5)
Terminal (M5)

VDC 200 - 800 V
VCC 13.5 15 16.5 V
fSW 1 - 20 kHz

- 2.5 - 3.0 N·m

- 2.5 - 3.0 N·m

7MBP50RA120

Block diagram

IGBT-IPM

Pre-drivers include following functions
a) Amplifier for driver
b) Short circuit protection
c) Undervoltage lockout circuit
d) Over current protection
e) IGBT chip over heating protection

Outline drawings, mm

Mass : 440g

7MBP50RA120

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Characteristics (Representative)

Control Circuit

IGBT-IPM

Power supply current vs. Switching frequency

Tj=100°C

40

35

30

25

20

15

10

P-side
N-side

Power supply current : Icc (mA)

5

0

0 5 10 15 20 25

Switching frequency : fsw (kHz)

Under voltage vs. Junction temperature

14

Vcc=17V

Vcc=15V

Vcc=13V

Vcc=17V

Vcc=15V
Vcc=13V

Input signal threshold voltage

vs. Power suppl

2.5

2

1.5

1

: Vin(on),Vin(off) (V)

Input signal threshold voltage

0.5

0

12 13 14 15 16 17 18

Power supply voltage : Vcc (V)

voltage

Under voltage hysterisis vs. Jnction temperature

1

Tj=25°C

T

=125°C

} Vin(off)

} Vin(on)

12

10

8

6

4

Under voltage : VUVT (V)

2

0

20 40 60 80 100 120 140

Junction temperature : Tj (°C)

Alarm hol d time vs. Power supply voltage

3

2.5
Tj= 125°C

2

Tj=25°C

0.8

0.6

0.4

0.2

Under voltage hysterisis : VH (V)

0

20 40 60 80 100 120 140

Junction temperature : Tj (°C)

Over heating characteristics

TcOH,TjOH,TcH,TjH vs. Vcc

200

TjOH

150

TcOH

1.5

1

Alarm hold time : tALM (mSe c)

0.5

0

12 13 14 15 16 17 18

Power supply voltage : Vcc (V)

100

OH hysterisis : TcH,TjH (°C)

50

Over heating protection : TcOH,TjOH (°C)

0

12 13 14 15 16 17 18

Power supply voltage : Vcc (V)

TcH,TjH

7MBP50RA120

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Inverter

IGBT-IPM

Collector current vs. Collector-Emitter voltage

=25°C

80

T

70

60

50

40

30

Collector Current : Ic (A)

20

10

0

0 0.5 1 1.5 2 2.5 3

Collector-Emitter voltage : Vce (V

Vcc=17V

Vcc=15V

Switching time vs. Collector cu rrent

Edc=600V,Vcc=15 V,Tj=25°C

10000

1000

Vcc=13V

toff

ton

Collector current vs. Collector-Emitter voltage

Tj=125°C

80

70

60

50

40

30

Collector Current : Ic (A)

20

10

0

0 0.5 1 1.5 2 2.5 3

Vcc=17V

Coll e ctor-Emitter voltage : Vce (V)

Switching time vs. Collector curr ent

Edc=600V,Vcc=15V,Tj=125°C

10000

1000

Vcc=15V

Vcc=13V

toff

ton

100

tf

Switching time : ton,toff,tf (nSec)

10

0 1020304050607080

Collector current : Ic (A)

Forward current vs. Forward voltage

80

70

60

50

40

30

Forward Current : If (A)

20

10

125°C

25°C

100

Switching time : ton,toff,tf (nSec)

10

0 1020304050607080

Collector current : Ic (A)

Reverse recovery characteris tics

trr, Ir r vs . IF

1000

100

Reverse recovery current : Irr(A)

Reverse recovery time : trr(nSec)

tf

trr125°C

trr25°C

Irr125°C

Irr25°C

0

00.511.522.53

Forward voltage : Vf ( V)

10

0 1020304050607080

Forward current : IF(A

7MBP50RA120

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IGBT-IPM

Transient ther m a l resistance

1

0.1

Thermal resist ance : Rth(j-c) (°C/ W)

0.01

0.001 0.01 0.1 1
Pulse width :Pw (sec)

Power derating for IGBT

(per device)

400

350

300

250

FWD

IGBT

Reversed biased safe operating area

700

600

500

400

300

200

Collector current : Ic (A)

100

0

0 200 400 600 800 1000 1200 1400

Vcc=15V,Tj 125°C

SCSOA
(non-repetitiv e pulse)

RBSOA
(Repetitive pulse)

Collector-Emitter voltage : Vce (V)

Power derating for FWD

(per device)

150

125

100

200

150

100

Collecter Power Dissipation : Pc (W)

50

0

0 20 40 60 80 100 120 140 160

Case Temperature : Tc (°C)

Switching Loss vs. Collector Current

Edc=600V,Vcc=15V,T

25

20

15

10

5

Switching loss : Eon,Eoff,Err (mJ/cycle)

0

0 1020304050607080

Collector current : Ic (A)

=25°C

Eon

Eoff

Err

75

50

25

Collec ter Powe r Dissipation : Pc (W)

0

0 20 40 60 80 100 120 140 160

Case Temperature : Tc (°C)

Switching Loss vs. Collector Current

Edc=600V,Vcc=15V,Tj=125°C

25

20

15

10

5

Switching loss : Eon,Eoff,Err (mJ/cycle)

0

0 1020304050607080

Collector current : Ic (A)

Eon

Eoff

Err

7MBP50RA120

Over current protection vs. Junction temperature

200

150

100

50

Over current protection level : Ioc(A)

0

0 20 40 60 80 100 120 140

IGBT-IPM

Vcc=15V

Junction temperature : Tj(°C)

7MBP50RA120

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Brake

IGBT-IPM

Collector current vs. C ollector-Emitter voltage

=25°C

40

T

35

30

25

20

15

Collector Current : Ic (A)

10

5

0

0 0.5 1 1.5 2 2.5 3

Vcc=17V

Vcc=15V

Vcc=13V

Collector-Emitter voltage : Vce (V )

Transient thermal resistance

1

IGBT

Collector current vs. Collector-Emitter voltage

Tj=125°C

40

35

30

25

20

15

Collector Current : Ic (A)

10

5

0

0 0.5 1 1.5 2 2.5 3

Collector-Emitter voltage : Vce (V)

Vcc=17V

Reversed b iased safe operating area

Vcc=15V,T

350

300

125°C

Vcc=15V

Vcc=13V

0.1

Thermal resistance : Rth(j-c) (°C/W)

0.01

0.001 0.01 0.1 1
Pu lse width :Pw (sec)

Power derating for IGBT

(per device)

250

200

150

100

250

200

150

100

Collector current : Ic (A)

50

0

0 200 400 600 800 1000 1200 1400

SCSOA
(non-repetitive pulse)

RBSOA
(Repetitiv e pulse)

Collector-Emitter voltage : Vce (V

Over current protection vs. Junction temperature

Vcc=15V

100

80

60

40

50

20

Over current protection level : Ioc(A)

Collecter Power Dissipation : Pc (W)

0

0 20 40 60 80 100 120 140 160

Case Temperature : Tc (°C)

0

0 20 40 60 80 100 120 140

Junction temperature : Tj(°C)